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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | RoHS Status | Published | Datasheet | Diameter | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Number of Pins | Lead Pitch | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Dielectric | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Configuration | Case Connection | Application | Breakdown Voltage | Natural Thermal Resistance | Speed | Diode Element Material | Power Dissipation-Max | Rep Pk Reverse Voltage-Max | Max Breakdown Voltage | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
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| GB01SLT12-220 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -55°C | RoHS Compliant | 2005 | TO-220-2 | 18 Weeks | No SVHC | 2 | EAR99 | 42W | NOT SPECIFIED | GB01SLT12 | Single | NOT SPECIFIED | 1A | 10A | 4μA | No Recovery Time > 500mA (Io) | 1.2kV | 0ns | 17 ns | Silicon Carbide Schottky | 1.2kV | 1A | 69pF @ 1V 1MHz | 1200V | 2μA @ 1200V | 1.8V @ 1A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| MURS340HE3/57T | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2012 | /files/vishaysemiconductordiodesdivision-murs360e357t-datasheets-7025.pdf | DO-214AB, SMC | Lead Free | 2 | No | MURS340 | Single | DO-214AB (SMC) | 4A | 1.25V | 125A | Fast Recovery =< 500ns, > 200mA (Io) | 10μA | 400V | 125A | 400V | 75 ns | 75 ns | Standard | 400V | 3A | 400V | 10μA @ 400V | 1.25V @ 3A | 3A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||
| DLE30C-KC9 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | RoHS Compliant | 1998 | /files/onsemiconductor-dle30e-datasheets-2990.pdf | DO-201AD, Axial | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | Standard | 200V | 3A | 200V | 10μA @ 400V | 980mV @ 3A | 150°C Max | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SRP300B-E3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 125°C | -50°C | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-srp300j1-datasheets-3705.pdf | DO-201AD, Axial | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | SRP300B | 2 | Single | 1 | Rectifier Diodes | 150A | 10μA | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 100V | 150A | 100 ns | 100 ns | Standard | 100V | 3A | 1 | 3A | 28pF @ 4V 1MHz | 10μA @ 100V | 1.3V @ 3A | -50°C~125°C | ||||||||||||||||||||||||||||||||||||||||
| NUR460P/L02U | WeEn Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 1 (Unlimited) | https://pdf.utmel.com/r/datasheets/weensemiconductors-nur460pl04u-datasheets-3019.pdf | DO-201AD, Axial | 2 | EAR99 | LOW LEAKAGE CURRENT | IEC-60134 | NO | WIRE | NUR460 | 175°C | 1 | O-PALF-W2 | SINGLE | ISOLATED | HIGH VOLTAGE ULTRA FAST SOFT RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 600V | 10μA | 75ns | Standard | 110A | 1 | 600V | 10μA @ 600V | 1.05V @ 3A | 4A | 175°C Max | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GI854-E3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -50°C | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gi858e373-datasheets-4925.pdf | DO-201AD, Axial | 2 | 2 | yes | EAR99 | LOW LEAKAGE CURRENT, FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | GI854 | 2 | Single | 1 | Rectifier Diodes | 1.25V | 100A | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 400V | 100A | 400V | 200 ns | 200 ns | Standard | 400V | 3A | 1 | 3A | 28pF @ 4V 1MHz | 10μA @ 400V | 1.25V @ 3A | -50°C~150°C | |||||||||||||||||||||||||||||||||||||||
| RGP02-20EHE3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2012 | /files/vishaysemiconductordiodesdivision-rgp0220ee354-datasheets-6870.pdf | DO-204AL, DO-41, Axial | Lead Free | 2 | Unknown | 2 | 5mm | yes | EAR99 | HIGH RELIABILITY | Tin | No | 8541.10.00.70 | e3 | Y5P | WIRE | RGP02-20 | 2 | Single | 1 | Rectifier Diodes | 150mA | 1V | 20A | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 2A | 5μA | 2kV | 20A | 2kV | 300 ns | 300 ns | Standard | 2kV | 500mA | 0.5A | 2000V | 5μA @ 2000V | 1.8V @ 100mA | -65°C~175°C | ||||||||||||||||||||||||||||||||||
| IDW12G65C5FKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolSiC™+ | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2013 | /files/infineontechnologies-idw12g65c5xksa1-datasheets-0612.pdf | TO-247-3 | 3 | yes | EAR99 | HIGH RELIABILITY | 8541.10.00.80 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | 175°C | NOT SPECIFIED | 1 | Rectifier Diodes | R-PSFM-T3 | SINGLE | CATHODE | EFFICIENCY | No Recovery Time > 500mA (Io) | 76W | 650V | 190μA | 0ns | Silicon Carbide Schottky | 505A | 1 | 12A | 360pF @ 1V 1MHz | 650V | 500μA @ 650V | 1.7V @ 12A | 12A DC | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||
| VS-50WQ06FNPBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount, Through Hole | Surface Mount | Tube | 1 (Unlimited) | SMD/SMT | 150°C | -40°C | ROHS3 Compliant | 2008 | /files/vishaysemiconductordiodesdivision-vs50wq06fntrpbf-datasheets-9646.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 6.223mm | 2.3876mm | 2 | Unknown | 2 | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | Tin | No | e3 | SINGLE | GULL WING | 260 | 50WQ06 | 3 | Common Anode | 10 | 1 | Rectifier Diodes | 5.5A | 570mV | 320A | 3mA | CATHODE | HIGH POWER | 60V | 3 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 60V | 320A | 3mA | 60V | 320A | Schottky | 60V | 5.5A | 1 | 360pF @ 5V 1MHz | 3mA @ 60V | 570mV @ 5A | -40°C~150°C | |||||||||||||||||||||||||||||||
| MUR160-E3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2008 | /files/vishaysemiconductordiodesdivision-mur16054-datasheets-7215.pdf | 3.6mm | DO-204AC, DO-15, Axial | 7.6mm | Lead Free | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | MUR160 | 2 | Single | 1 | Rectifier Diodes | 1A | 1.25V | 35A | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 600V | 35A | 600V | 75 ns | 75 ns | Standard | 600V | 1A | 1A | 5μA @ 600V | 1.25V @ 1A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||
| SB330S-E3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 125°C | -65°C | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-sb360se373-datasheets-5202.pdf | DO-204AC, DO-15, Axial | 2 | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | SB330 | 2 | Single | 1 | Rectifier Diodes | O-PALF-W2 | 3A | 100A | 500μA | ISOLATED | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500μA | 30V | 100A | Schottky | 30V | 3A | 1 | 3A | 500μA @ 30V | 500mV @ 3A | -65°C~125°C | ||||||||||||||||||||||||||||||||||||||||||
| S1GHE3/5AT | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-s1me361t-datasheets-6649.pdf | DO-214AC, SMA | 4.5mm | 2.29mm | 2.79mm | Lead Free | 2 | No | S1G | Single | DO-214AC (SMA) | 1A | 1.1V | 40A | Standard Recovery >500ns, > 200mA (Io) | 40A | 1μA | 400V | 40A | 400V | 1.8 μs | 1.8 μs | Standard | 400V | 1A | 12pF @ 4V 1MHz | 400V | 1μA @ 400V | 1.1V @ 1A | 1A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||
| GI824-E3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -50°C | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gi820e354-datasheets-2016.pdf | 9.1mm | P600, Axial | 9.0932mm | Lead Free | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | NOT APPLICABLE | GI824 | 2 | Single | NOT APPLICABLE | 1 | Rectifier Diodes | Not Qualified | 1.05V | 300A | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 400V | 300A | 400V | 200 ns | 200 ns | Standard | 400V | 5A | 1 | 5A | 300pF @ 4V 1MHz | 10μA @ 400V | 1.1V @ 5A | -50°C~150°C | |||||||||||||||||||||||||||||||||
| 1N8035-GA | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | Non-RoHS Compliant | 2013 | TO-276AA | 24 Weeks | EAR99 | 8541.10.00.80 | 1N8035 | 250°C | Single | 1 | Rectifier Diodes | 15A | 2.2V | 0.49 °C/W | No Recovery Time > 500mA (Io) | 140A | 650V | 0ns | Silicon Carbide Schottky | 650V | 14.6A | 45A | 1107pF @ 1V 1MHz | 5μA @ 650V | 1.5V @ 15A | 14.6A DC | -55°C~250°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MURS120HE3/52T | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2008 | /files/vishaysemiconductordiodesdivision-murs120e352t-datasheets-6799.pdf | DO-214AA, SMB | Lead Free | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | MURS120 | 2 | Single | 40 | 1 | Rectifier Diodes | 2A | 875mV | 40A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 2μA | 200V | 40A | 200V | 35 ns | 35 ns | Standard | 200V | 2A | 1 | 2A | 2μA @ 200V | 875mV @ 1A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||
| RGP02-20EHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-rgp0220ee354-datasheets-6870.pdf | DO-204AL, DO-41, Axial | 2 | 2 | yes | EAR99 | HIGH RELIABILITY | No | 8541.10.00.70 | e3 | Matte Tin (Sn) | WIRE | RGP02-20 | 2 | Single | 1 | Rectifier Diodes | 1.8V | 20A | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 2kV | 20A | 2kV | 300 ns | 300 ns | Standard | 2kV | 500mA | 0.5A | 2000V | 5μA @ 2000V | 1.8V @ 100mA | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||
| BY500-400-E3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 125°C | -50°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-by500100e373-datasheets-4810.pdf | DO-201AD, Axial | 2 | 2 | yes | EAR99 | LOW LEAKAGE CURRENT, FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | BY500-400 | 2 | Single | 1 | Rectifier Diodes | 5A | 1.35V | 200A | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 400V | 200A | 400V | 200 ns | 200 ns | Standard | 400V | 5A | 1 | 5A | 28pF @ 4V 1MHz | 10μA @ 400V | 1.35V @ 5A | 125°C Max | ||||||||||||||||||||||||||||||||||||||
| GB05SLT12-220 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -55°C | RoHS Compliant | 2015 | TO-220-2 | 2 | 18 Weeks | No SVHC | 2 | EAR99 | PD-CASE | 8541.10.00.80 | 42W | NOT SPECIFIED | GB05SLT12 | Single | NOT SPECIFIED | 1 | 5A | 32A | 26μA | CATHODE | EFFICIENCY | No Recovery Time > 500mA (Io) | 1.2kV | 0ns | 25 ns | Silicon Carbide Schottky | 1.2kV | 5A | 1 | 5A | 260pF @ 1V 1MHz | 1200V | 50μA @ 1200V | 1.8V @ 2A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||
| 1N5626GP-E3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2008 | /files/vishaysemiconductordiodesdivision-1n5625tap-datasheets-1963.pdf | DO-201AD, Axial | Lead Free | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | 1N5626 | 2 | Single | 1 | Rectifier Diodes | 1V | 125A | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 600V | 125A | 600V | 3 μs | 3 μs | Standard | 600V | 3A | 1 | 3A | 40pF @ 4V 1MHz | 5μA @ 600V | 1V @ 3A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||
| GI821-E3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -50°C | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gi820e354-datasheets-2016.pdf | P600, Axial | Lead Free | 2 | Unknown | 2 | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | GI821 | 2 | Single | 1 | Rectifier Diodes | 5A | 1.1V | 300A | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 300A | 10μA | 100V | 300A | 100V | 200 ns | 200 ns | Standard | 100V | 5A | 1 | 5A | 300pF @ 4V 1MHz | 10μA @ 100V | 1.1V @ 5A | -50°C~150°C | |||||||||||||||||||||||||||||||||||
| GI851-E3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -50°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gi858e373-datasheets-4925.pdf | DO-201AD, Axial | Lead Free | 2 | Unknown | 2 | yes | EAR99 | LOW LEAKAGE CURRENT, FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | GI851 | 2 | Single | 1 | Rectifier Diodes | 3A | 1.25V | 100A | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100A | 10μA | 100V | 100A | 100V | 200 ns | 200 ns | Standard | 100V | 3A | 1 | 3A | 28pF @ 4V 1MHz | 10μA @ 100V | 1.25V @ 3A | -50°C~150°C | |||||||||||||||||||||||||||||||||||
| GB02SLT12-220 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | RoHS Compliant | 2005 | /files/genesicsemiconductor-gb02slt12220-datasheets-1160.pdf | TO-220-2 | 2 | 18 Weeks | No SVHC | 2 | EAR99 | PD-CASE | 8541.10.00.80 | 42W | NOT SPECIFIED | GB02SLT12 | Single | NOT SPECIFIED | 1 | 2A | 2.9V | 18A | 8μA | CATHODE | EFFICIENCY | 2.32 °C/W | No Recovery Time > 500mA (Io) | 1.2kV | 0ns | 17 ns | Silicon Carbide Schottky | 1.2kV | 2A | 1 | 2A | 138pF @ 1V 1MHz | 1200V | 50μA @ 1200V | 1.8V @ 2A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||
| DLA11C-TR-E | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2004 | /files/onsemiconductor-dla11ctre-datasheets-3125.pdf | 2-SMD, J-Lead | SMD | Fast Recovery =< 500ns, > 200mA (Io) | 10μA | 200V | 50 ns | 50 ns | Standard | 200V | 1.1A | 200V | 10μA @ 200V | 980mV @ 1.1A | 1.1A | 150°C Max | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IDH09G65C5XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolSiC™+ | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2012 | /files/infineontechnologies-idh09g65c5xksa2-datasheets-4752.pdf | TO-220-2 | EAR99 | 8541.10.00.80 | 3 | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 270pF @ 1V 1MHz | 650V | 310μA @ 650V | 1.7V @ 9A | 9A DC | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BYG22DHE3/TR | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-byg22de3tr-datasheets-0872.pdf | DO-214AC, SMA | Lead Free | Unknown | 2 | Tin | BYG22D | Single | DO-214AC (SMA) | 2A | 1.1V | 35A | Fast Recovery =< 500ns, > 200mA (Io) | 35A | 1μA | 200V | 35A | 200V | 25 ns | 25 ns | Avalanche | 200V | 2A | 200V | 1μA @ 200V | 1.1V @ 2A | 2A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||
| 1N5624GP-E3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2008 | /files/vishaysemiconductordiodesdivision-1n5626gphe354-datasheets-5308.pdf | DO-201AD, Axial | 9.4996mm | 2 | Unknown | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT | Tin | No | 8541.10.00.80 | e3 | WIRE | 1N5624 | 2 | Single | 1 | Rectifier Diodes | 3A | 950mV | 125A | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 125A | 5μA | 200V | 125A | 200V | 3 μs | 3 μs | Standard | 200V | 3A | 1 | 3A | 40pF @ 4V 1MHz | 5μA @ 200V | 1V @ 3A | -65°C~175°C | ||||||||||||||||||||||||||||||||||
| IDW30G65C5FKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolSiC™+ | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2013 | /files/infineontechnologies-idw30g65c5xksa1-datasheets-8074.pdf | TO-247-3 | 10 Weeks | yes | EAR99 | 8541.10.00.80 | 3 | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 860pF @ 1V 1MHz | 650V | 1.1mA @ 650V | 1.7V @ 30A | 30A DC | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ES2DHE3/52T | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | /files/vishaysemiconductordiodesdivision-es2be352t-datasheets-6983.pdf | DO-214AA, SMB | 4.57mm | 2.44mm | 3.94mm | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | ES2D | 2 | Single | 40 | 1 | Rectifier Diodes | 2A | 900mV | 50A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 200V | 50A | 200V | 30 ns | 30 ns | Standard | 200V | 2A | 1 | 2A | 18pF @ 4V 1MHz | 10μA @ 200V | 900mV @ 2A | -55°C~150°C | |||||||||||||||||||||||||||||||||
| BY500-800-E3/54 | Vishay Semiconductor Diodes Division |
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0 | 0x0x0 | download | Surface Mount, Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 125°C | -50°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-by500100e373-datasheets-4810.pdf | DO-201AD, Axial | 9.5mm | 5.3mm | 5.3mm | 2 | 2 | yes | EAR99 | LOW LEAKAGE CURRENT, FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | BY500-800 | 2 | Single | 1 | Rectifier Diodes | 5A | 1.35V | 200A | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 200A | 10μA | 800V | 200A | 800V | 200 ns | 200 ns | Standard | 800V | 5A | 1 | 5A | 28pF @ 4V 1MHz | 10μA @ 800V | 1.35V @ 5A | 125°C Max | ||||||||||||||||||||||||||||||||||
| IDW40G65C5FKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolSiC™+ | Through Hole | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2013 | /files/infineontechnologies-idw40g65c5xksa1-datasheets-5961.pdf | TO-247-3 | 8 Weeks | yes | EAR99 | 8541.10.00.80 | 3 | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 1140pF @ 1V 1MHz | 650V | 1.4mA @ 650V | 1.7V @ 40A | 40A DC | -55°C~175°C |
