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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | RoHS Status | Published | Datasheet | Package / Case | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Case Code (Metric) | Case Code (Imperial) | Reference Standard | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Configuration | Case Connection | Application | Natural Thermal Resistance | Speed | Diode Element Material | Power Dissipation-Max | Rep Pk Reverse Voltage-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
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| DSA26G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 150°C | -30°C | RoHS Compliant | 2000 | /files/onsemiconductor-dsa26g-datasheets-3174.pdf | Axial | 2 | 2 | EAR99 | HIGH RELIABILITY | No | 8541.10.00.80 | e6 | Tin/Bismuth (Sn/Bi) | WIRE | Single | 1 | ISOLATED | POWER | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 600V | 120A | Standard | 600V | 2.6A | 1 | 10μA @ 600V | 1.05V @ 2.6A | 150°C Max | ||||||||||||||||||||||||||||||||||||||||||||||
| BY500-400-E3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 125°C | -50°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-by500100e373-datasheets-4810.pdf | DO-201AD, Axial | 2 | 2 | yes | EAR99 | LOW LEAKAGE CURRENT, FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | BY500-400 | 2 | Single | 1 | Rectifier Diodes | 5A | 1.35V | 200A | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 400V | 200A | 400V | 200 ns | 200 ns | Standard | 400V | 5A | 1 | 5A | 28pF @ 4V 1MHz | 10μA @ 400V | 1.35V @ 5A | 125°C Max | ||||||||||||||||||||||||||||||||||
| IDW16G65C5FKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolSiC™+ | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2013 | /files/infineontechnologies-idw16g65c5xksa1-datasheets-7913.pdf | TO-247-3 | 8 Weeks | yes | EAR99 | 8541.10.00.80 | 3 | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 470pF @ 1V 1MHz | 650V | 600μA @ 650V | 1.7V @ 16A | 16A DC | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| V10P10HM3/86A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eSMP®, TMBS® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2009 | /files/vishaysemiconductordiodesdivision-v10p10m386a-datasheets-5048.pdf | TO-277, 3-PowerDFN | Lead Free | 3 | 3 | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | Tin | No | 8541.10.00.80 | e3 | DUAL | FLAT | V10P10 | 3 | Common Anode | 1 | Rectifier Diodes | 10A | 680mV | 180A | 150μA | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 150μA | 100V | 180A | TO-277A | Schottky | 100V | 10A | 1 | 150μA @ 100V | 680mV @ 10A | -40°C~150°C | ||||||||||||||||||||||||||||||||||
| SB10-04A3-AT1 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 1998 | https://pdf.utmel.com/r/datasheets/onsemiconductor-sb1004a3bt-datasheets-2980.pdf | DO-204AL, DO-41, Axial | 2 | EAR99 | 8541.10.00.80 | e6 | Tin/Bismuth (Sn/Bi) | WIRE | 1 | Not Qualified | O-PALF-W2 | 25A | 1mA | SINGLE | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | Schottky | 40V | 1A | 1A | 45pF @ 10V 1MHz | 800μA @ 40V | 550mV @ 1A | 125°C Max | ||||||||||||||||||||||||||||||||||||||||||||||||||
| DLN10C-AT1 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 1998 | https://pdf.utmel.com/r/datasheets/onsemiconductor-dln10cbt-datasheets-2870.pdf | R-1, Axial | 2 | EAR99 | 8541.10.00.80 | e6 | Tin/Bismuth (Sn/Bi) | WIRE | 1 | Not Qualified | O-PALF-W2 | SINGLE | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 35 ns | Standard | 200V | 1A | 1A | 200V | 10μA @ 200V | 980mV @ 1A | 150°C Max | |||||||||||||||||||||||||||||||||||||||||||||||||||
| NUR460P,133 | WeEn Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Box (TB) | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/weensemiconductors-nur460pl04u-datasheets-3019.pdf | DO-201AD, Axial | 2 | LOW LEAKAGE CURRENT | not_compliant | e3 | Tin (Sn) | IEC-60134 | NO | WIRE | NUR460 | 175°C | 1 | O-PALF-W2 | SINGLE | ISOLATED | HIGH VOLTAGE ULTRA FAST SOFT RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 600V | 10μA | 75ns | Standard | 110A | 1 | 600V | 10μA @ 600V | 1.05V @ 3A | 4A | 175°C Max | |||||||||||||||||||||||||||||||||||||||||||||||
| CD0603-B0140R | Bourns Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 125°C | -40°C | ROHS3 Compliant | 2008 | /files/bournsinc-cd1005b0140r-datasheets-0689.pdf | 0603 (1608 Metric) | 2 | 14 Weeks | No SVHC | 2 | yes | EAR99 | Gold | 8541.10.00.70 | 1608 | 0603 | DUAL | NO LEAD | NOT SPECIFIED | CD0603 | 2 | Single | NOT SPECIFIED | 1 | Not Qualified | 100mA | 450mV | 1A | 1μA | Small Signal =< 200mA (Io), Any Speed | SILICON | 0.15W | 1A | 40V | 1A | Schottky | 40V | 100mA | 9pF @ 10V 1MHz | 1μA @ 10V | 450mV @ 10mA | -40°C~125°C | |||||||||||||||||||||||||||||||||||
| CFRB305-G | Comchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/comchiptechnology-cfrb305g-datasheets-3032.pdf | DO-214AA, SMB | CFRB305 | DO-214AA (SMB) | Fast Recovery =< 500ns, > 200mA (Io) | 250 ns | Standard | 600V | 3A | 50pF @ 4V 1MHz | 600V | 5μA @ 600V | 1.3V @ 3A | 3A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IDH08G65C5XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolSiC™+ | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2008 | /files/infineontechnologies-idh08g65c5xksa2-datasheets-0349.pdf | TO-220-2 | 2 | 16 Weeks | yes | EAR99 | PD-CASE | 8541.10.00.80 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | Rectifier Diodes | R-PSFM-T2 | SINGLE | CATHODE | EFFICIENCY | No Recovery Time > 500mA (Io) | 76W | 650V | 140μA | TO-220AC | 0ns | Silicon Carbide Schottky | 60A | 1 | 8A | 250pF @ 1V 1MHz | 650V | 280μA @ 650V | 1.7V @ 8A | 8A DC | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||
| GB10SLT12-220 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | RoHS Compliant | 2015 | TO-220-2 | 2 | 18 Weeks | No SVHC | 2 | EAR99 | PD-CASE | 8541.10.00.80 | 42W | NOT SPECIFIED | GB10SLT12 | Single | NOT SPECIFIED | 1 | 10A | 1.8V | 65A | 52μA | CATHODE | EFFICIENCY | 0.8 °C/W | No Recovery Time > 500mA (Io) | 1.2kV | 0ns | 25 ns | Silicon Carbide Schottky | 1.2kV | 10A | 1 | 520pF @ 1V 1MHz | 1200V | 40μA @ 1200V | 1.8V @ 10A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||
| IDW10G65C5FKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolSiC™+ | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2013 | /files/infineontechnologies-idw10g65c5xksa1-datasheets-0458.pdf | TO-247-3 | yes | EAR99 | 8541.10.00.80 | 3 | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 300pF @ 1V 1MHz | 650V | 400μA @ 650V | 1.7V @ 10A | 10A DC | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NUR460P/L03U | WeEn Semiconductors | $0.19 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 1 (Unlimited) | https://pdf.utmel.com/r/datasheets/weensemiconductors-nur460pl04u-datasheets-3019.pdf | DO-201AD, Axial | 2 | LOW LEAKAGE CURRENT | IEC-60134 | NO | WIRE | NUR460 | 175°C | 1 | O-PALF-W2 | SINGLE | ISOLATED | HIGH VOLTAGE ULTRA FAST SOFT RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 600V | 10μA | 75ns | Standard | 110A | 1 | 600V | 10μA @ 600V | 1.05V @ 3A | 4A | 175°C Max | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SB10-05A3-AT1 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 1998 | https://pdf.utmel.com/r/datasheets/onsemiconductor-sb1005a2-datasheets-2853.pdf | DO-204AL, DO-41, Axial | 2 | EAR99 | 8541.10.00.80 | WIRE | SB10-05 | 1 | Not Qualified | O-PALF-W2 | 25A | 1mA | SINGLE | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 30 ns | Schottky | 50V | 1A | 1A | 1mA @ 50V | 580mV @ 1A | 125°C Max | |||||||||||||||||||||||||||||||||||||||||||||||||||
| GPP100MS-E3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gpp100mse354-datasheets-3087.pdf | P600, Axial | 2 | yes | EAR99 | unknown | 8541.10.00.80 | e3 | MATTE TIN | WIRE | NOT SPECIFIED | GPP100MS | 175°C | NOT SPECIFIED | 1 | O-PALF-W2 | SINGLE | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 5.5 μs | Standard | 1kV | 10A | 440A | 1 | 110pF @ 4V 1MHz | 1000V | 5μA @ 1000V | 1.05V @ 10A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||
| RD0106T-TL-H | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | RoHS Compliant | 2012 | /files/onsemiconductor-rd0106th-datasheets-2928.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 4 Weeks | 3 | LAST SHIPMENTS (Last Updated: 1 week ago) | yes | EAR99 | No | e6 | Tin/Bismuth (Sn/Bi) | Halogen Free | 3 | Single | 1A | 10A | Fast Recovery =< 500ns, > 200mA (Io) | 10μA | 600V | 10A | 50 ns | Standard | 600V | 1A | 10μA @ 600V | 1.3V @ 1A | 150°C Max | |||||||||||||||||||||||||||||||||||||||||||||||
| IDW20G65C5FKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolSiC™+ | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2003 | /files/infineontechnologies-idw20g65c5xksa1-datasheets-8163.pdf | TO-247-3 | yes | EAR99 | 8541.10.00.80 | 3 | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 590pF @ 1V 1MHz | 650V | 700μA @ 650V | 1.7V @ 20A | 20A DC | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| UD0506T-H | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 1 (Unlimited) | 150°C | -55°C | RoHS Compliant | 2012 | /files/onsemiconductor-ud0506ttlh-datasheets-9862.pdf | TO-251-3 Short Leads, IPak, TO-251AA | Lead Free | 3 | 4 Weeks | 3 | LAST SHIPMENTS (Last Updated: 2 weeks ago) | yes | EAR99 | No | e6 | Tin/Bismuth (Sn/Bi) | Halogen Free | NO | 3 | Single | 1 | 5A | 40A | CATHODE | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 600V | 40A | 150 ns | Standard | 600V | 5A | 1 | 5A | 10μA @ 600V | 1.3V @ 5A | 150°C Max | |||||||||||||||||||||||||||||||||||||||
| IDH20G65C5XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolSiC™+ | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2012 | /files/infineontechnologies-idh20g65c5xksa2-datasheets-1011.pdf | TO-220-2 | 2 | 16 Weeks | yes | EAR99 | HIGH RELIABILITY | 8541.10.00.80 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | 175°C | NOT SPECIFIED | 1 | Rectifier Diodes | R-PSFM-T2 | SINGLE | CATHODE | EFFICIENCY | No Recovery Time > 500mA (Io) | 157W | 650V | 210μA | TO-220AC | 0ns | Silicon Carbide Schottky | 776A | 1 | 20A | 590pF @ 1V 1MHz | 650V | 700μA @ 650V | 1.7V @ 20A | 20A DC | -55°C~175°C | |||||||||||||||||||||||||||||||||||||
| IDH10G65C5XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolSiC™+ | Through Hole | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2013 | /files/infineontechnologies-idh10g65c5xksa2-datasheets-5814.pdf | TO-220-2 | 17 Weeks | yes | EAR99 | 8541.10.00.80 | 3 | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 300pF @ 1V 1MHz | 650V | 340μA @ 650V | 1.7V @ 10A | 10A DC | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DLE30E | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 150°C | -40°C | RoHS Compliant | 1998 | /files/onsemiconductor-dle30e-datasheets-2990.pdf | DO-201AD, Axial | 2 | 2 | EAR99 | No | 8541.10.00.80 | e3 | Tin (Sn) | WIRE | Single | 1 | 3A | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 20μA | 400V | 60A | 30 ns | Standard | 400V | 3A | 1 | 1.5A | 20μA @ 400V | 1.25V @ 1A | 150°C Max | ||||||||||||||||||||||||||||||||||||||||||||
| DLE30C | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 150°C | RoHS Compliant | 1998 | /files/onsemiconductor-dle30e-datasheets-2990.pdf | DO-201AD, Axial | 2 | 2 | EAR99 | No | 8541.10.00.80 | e3 | Tin (Sn) | WIRE | Single | 1 | 3A | 60A | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 200V | 60A | 200V | 35 ns | 35 ns | Standard | 200V | 3A | 1 | 1.5A | 10μA @ 400V | 980mV @ 3A | 150°C Max | ||||||||||||||||||||||||||||||||||||||||||
| 1N8028-GA | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | Non-RoHS Compliant | 2014 | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-1n8028ga-datasheets-2992.pdf | TO-257-3 | 24 Weeks | EAR99 | 8541.10.00.80 | 1N8028 | 250°C | Single | 1 | Rectifier Diodes | 10A | 2.3V | 1.08 °C/W | No Recovery Time > 500mA (Io) | 45A | 1.2kV | 0ns | Silicon Carbide Schottky | 1.2kV | 9.4A | 30A | 884pF @ 1V 1MHz | 1200V | 20μA @ 1200V | 1.6V @ 10A | 9.4A DC | -55°C~250°C | ||||||||||||||||||||||||||||||||||||||||||||||||
| NUR460P/L01U | WeEn Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 1 (Unlimited) | https://pdf.utmel.com/r/datasheets/weensemiconductors-nur460pl04u-datasheets-3019.pdf | DO-201AD, Axial | 2 | LOW LEAKAGE CURRENT | IEC-60134 | NO | WIRE | NUR460 | 175°C | 1 | O-PALF-W2 | SINGLE | ISOLATED | HIGH VOLTAGE ULTRA FAST SOFT RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 600V | 10μA | 75ns | Standard | 110A | 1 | 600V | 10μA @ 600V | 1.05V @ 3A | 4A | 175°C Max | |||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N8030-GA | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | -55°C | Non-RoHS Compliant | 2014 | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-1n8030ga-datasheets-2994.pdf | TO-257-3 | Contains Lead | 24 Weeks | EAR99 | 8541.10.00.80 | 1N8030 | 1 | Rectifier Diodes | 750mA | 1.4V | SINGLE | 9.52 °C/W | No Recovery Time > 500mA (Io) | 10A | 650V | 0ns | Silicon Carbide Schottky | 650V | 750mA | 2.5A | 76pF @ 1V 1MHz | 5μA @ 650V | 1.39V @ 750mA | -55°C~250°C | |||||||||||||||||||||||||||||||||||||||||||||||||
| 1N8024-GA | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | Non-RoHS Compliant | 2014 | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-1n8024ga-datasheets-3000.pdf | TO-257-3 | Contains Lead | 24 Weeks | 3 | 1N8024 | TO-257 | 750mA | 1.7V | 9.52 °C/W | No Recovery Time > 500mA (Io) | 8A | 1.2kV | 0 s | Silicon Carbide Schottky | 1.2kV | 750mA | 66pF @ 1V 1MHz | 1200V | 10μA @ 1200V | 1.74V @ 750mA | 750mA | -55°C~250°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SB11-04HP-TR-E | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 1998 | https://pdf.utmel.com/r/datasheets/onsemiconductor-sb1104hptre-datasheets-3002.pdf | 2-SMD, J-Lead | SMD | 30A | 1mA | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 40V | 1.1A | 40V | 1mA @ 40V | 550mV @ 1.1A | 1.1A | 125°C Max | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N8031-GA | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | Non-RoHS Compliant | 2014 | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-1n8031ga-datasheets-3004.pdf | TO-276AA | Contains Lead | 24 Weeks | EAR99 | 8541.10.00.80 | 1N8031 | 250°C | Single | 1 | Rectifier Diodes | 1A | 2.3V | 3.55 °C/W | No Recovery Time > 500mA (Io) | 10A | 650V | 0ns | Silicon Carbide Schottky | 650V | 1A | 4A | 76pF @ 1V 1MHz | 5μA @ 650V | 1.5V @ 1A | -55°C~250°C | |||||||||||||||||||||||||||||||||||||||||||||||||
| SB10-05A2-AT1 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 1998 | /files/onsemiconductor-sb1005a2-datasheets-2853.pdf | DO-204AL, DO-41, Axial | 2 | EAR99 | unknown | 8541.10.00.80 | WIRE | SB10-05 | 1 | Not Qualified | O-PALF-W2 | 25A | 1mA | SINGLE | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 30 ns | Schottky | 50V | 1A | 1A | 1mA @ 50V | 580mV @ 1A | 125°C Max | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SBH15-03-TR-E | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2016 |
