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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Case Code (Metric) | Case Code (Imperial) | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Configuration | Case Connection | Application | Natural Thermal Resistance | Speed | Diode Element Material | Power Dissipation-Max | Rep Pk Reverse Voltage-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
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| SB340S-E3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 125°C | -65°C | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-sb360se373-datasheets-5202.pdf | DO-204AC, DO-15, Axial | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | NOT APPLICABLE | SB340 | 2 | Single | NOT APPLICABLE | 1 | Rectifier Diodes | Not Qualified | 500mV | 100A | 500μA | ISOLATED | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100A | 100 ns | Schottky | 40V | 3A | 1 | 3A | 500μA @ 40V | 500mV @ 3A | -65°C~125°C | |||||||||||||||||||||||||||||||||||||
| STTH5L04DEE-TR | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stth5l04deetr-datasheets-1137.pdf | 8-PowerVDFN | 3.4mm | 1mm | 3.4mm | Lead Free | 5 | No SVHC | 8 | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | 260 | STTH5L04 | 8 | Single | 30 | 1 | Rectifier Diodes | S-PDSO-N5 | 5A | 1.25V | 60A | CATHODE | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 60A | 2.5μA | 400V | 60A | 60 ns | 110 ns | Standard | 400V | 5A | 1 | 5A | 2.5μA @ 400V | 1.25V @ 5A | 150°C Max | ||||||||||||||||||||||||||||||||
| USB260-E3/52T | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2013 | DO-214AA, SMB | Lead Free | 2 | Unknown | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | USB260 | 2 | Single | 40 | 1 | Rectifier Diodes | 2A | 1V | 90A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 90A | 5μA | 600V | 90A | 600V | 30 ns | 30 ns | Standard | 600V | 2A | 1 | 2A | 5μA @ 600V | 1.6V @ 2A | -55°C~150°C | ||||||||||||||||||||||||||||||||
| 1N8026-GA | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | Non-RoHS Compliant | 2014 | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-1n8026ga-datasheets-2988.pdf | TO-257-3 | Contains Lead | 24 Weeks | 1N8026 | Single | TO-257 | 2.5A | 1.6V | 3.4 °C/W | No Recovery Time > 500mA (Io) | 30A | 1.2kV | 0 s | Silicon Carbide Schottky | 1.2kV | 2.5A | 237pF @ 1V 1MHz | 1200V | 10μA @ 1200V | 1.6V @ 2.5A | 8A DC | -55°C~250°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| CDBMTS150-HF | Comchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/comchiptechnology-cdbmts180hf-datasheets-2367.pdf | SOD-123S | 2 | EAR99 | LOW POWER LOSS | 8541.10.00.80 | DUAL | FLAT | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | Rectifier Diodes | R-PDSO-F2 | SINGLE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | Schottky | 50V | 1A | 30A | 1A | 120pF @ 4V 1MHz | 500μA @ 50V | 700mV @ 1A | 1A DC | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||
| DLE30E | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 150°C | -40°C | RoHS Compliant | 1998 | /files/onsemiconductor-dle30e-datasheets-2990.pdf | DO-201AD, Axial | 2 | 2 | EAR99 | No | 8541.10.00.80 | e3 | Tin (Sn) | WIRE | Single | 1 | 3A | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 20μA | 400V | 60A | 30 ns | Standard | 400V | 3A | 1 | 1.5A | 20μA @ 400V | 1.25V @ 1A | 150°C Max | |||||||||||||||||||||||||||||||||||||||||||||
| DLE30C | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 150°C | RoHS Compliant | 1998 | /files/onsemiconductor-dle30e-datasheets-2990.pdf | DO-201AD, Axial | 2 | 2 | EAR99 | No | 8541.10.00.80 | e3 | Tin (Sn) | WIRE | Single | 1 | 3A | 60A | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 200V | 60A | 200V | 35 ns | 35 ns | Standard | 200V | 3A | 1 | 1.5A | 10μA @ 400V | 980mV @ 3A | 150°C Max | |||||||||||||||||||||||||||||||||||||||||||
| 1N8028-GA | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | Non-RoHS Compliant | 2014 | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-1n8028ga-datasheets-2992.pdf | TO-257-3 | 24 Weeks | EAR99 | 8541.10.00.80 | 1N8028 | 250°C | Single | 1 | Rectifier Diodes | 10A | 2.3V | 1.08 °C/W | No Recovery Time > 500mA (Io) | 45A | 1.2kV | 0ns | Silicon Carbide Schottky | 1.2kV | 9.4A | 30A | 884pF @ 1V 1MHz | 1200V | 20μA @ 1200V | 1.6V @ 10A | 9.4A DC | -55°C~250°C | |||||||||||||||||||||||||||||||||||||||||||||||||
| NUR460P/L01U | WeEn Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 1 (Unlimited) | https://pdf.utmel.com/r/datasheets/weensemiconductors-nur460pl04u-datasheets-3019.pdf | DO-201AD, Axial | 2 | LOW LEAKAGE CURRENT | IEC-60134 | NO | WIRE | NUR460 | 175°C | 1 | O-PALF-W2 | SINGLE | ISOLATED | HIGH VOLTAGE ULTRA FAST SOFT RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 600V | 10μA | 75ns | Standard | 110A | 1 | 600V | 10μA @ 600V | 1.05V @ 3A | 4A | 175°C Max | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SB10-03A2-AT1 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 125°C | -40°C | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/onsemiconductor-sb1003a3-datasheets-2855.pdf | DO-204AL, DO-41, Axial | Lead Free | 2 | 2 | yes | EAR99 | unknown | 8541.10.00.80 | WIRE | SB10-03 | Single | 1 | Rectifier Diodes | Not Qualified | 1A | 580mV | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 25A | 1mA | 40A | 30 ns | Schottky | 30V | 1A | 1A | 1mA @ 30V | 550mV @ 1A | 150°C Max | |||||||||||||||||||||||||||||||||||||||||||
| DLM10C | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | RoHS Compliant | 2007 | /files/onsemiconductor-dlm10eat1-datasheets-2845.pdf | DO-204AL, DO-41, Axial | 2 | 2 | EAR99 | No | 8541.10.00.80 | e3 | Tin (Sn) | WIRE | DLM10 | Single | 1 | 1A | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 200V | 30A | 35 ns | Standard | 200V | 1A | 1A | 10μA @ 200V | 980mV @ 1A | 150°C Max | ||||||||||||||||||||||||||||||||||||||||||||||||
| DSE010-TR-E | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2003 | 4 Weeks | 2 | Small Signal =< 200mA (Io), Any Speed | 4 ns | Standard | 80V | 100mA | 3pF @ 0.5V 1MHz | 80V | 500nA @ 80V | 1.2V @ 100mA | -55°C~125°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SB10-05A3-BT | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 1998 | /files/onsemiconductor-sb1005a2-datasheets-2853.pdf | DO-204AL, DO-41, Axial | 2 | EAR99 | 8541.10.00.80 | e3 | Tin (Sn) | WIRE | SB10-05 | 1 | Not Qualified | O-PALF-W2 | 25A | 1mA | SINGLE | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 30 ns | Schottky | 50V | 1A | 1A | 1mA @ 50V | 580mV @ 1A | 125°C Max | ||||||||||||||||||||||||||||||||||||||||||||||||||
| CD1005-S0180 | Bourns Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 125°C | -40°C | ROHS3 Compliant | 2006 | /files/bournsinc-cd0603s0180r-datasheets-2803.pdf | 1005 (2512 Metric) | 2.6mm | 900μm | 1.3mm | 2 | 12 Weeks | 2 | yes | EAR99 | Gold | No | 8541.10.00.70 | e4 | 2512 | 1005 | DUAL | CD1005 | 2 | Single | 1 | Rectifier Diodes | 100mA | 1V | 1A | 100nA | Small Signal =< 200mA (Io), Any Speed | SILICON | 0.3W | 1A | 100nA | 90V | 1A | 4 ns | 4 ns | Standard | 80V | 100mA | 4pF @ 1V 100MHz | 100nA @ 80V | 1V @ 100mA | -40°C~125°C | ||||||||||||||||||||||||||||||||
| DS135AD | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | RoHS Compliant | 2007 | /files/onsemiconductor-ds135ae-datasheets-2806.pdf | DO-204AL, DO-41, Axial | 2 | EAR99 | 8541.10.00.80 | e3 | Tin (Sn) | WIRE | 2 | 1 | Not Qualified | O-PALF-W2 | SINGLE | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | Standard | 200V | 1A | 1A | 200V | 10μA @ 200V | 1V @ 1A | 150°C Max | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| STPS30M120STN | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | Not Applicable | 150°C | -65°C | ROHS3 Compliant | TO-220-3 | 3 | No SVHC | 3 | EAR99 | No | STPS30 | Single | 1 | 30A | 900mV | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 260A | 345μA | 120V | 260A | TO-220AB | Schottky | 120V | 30A | 1 | 345μA @ 120V | 900mV @ 30A | 150°C Max | ||||||||||||||||||||||||||||||||||||||||||||||||
| DSF10TB-AT1 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2008 | /files/onsemiconductor-dsf10tb-datasheets-2865.pdf | DO-204AL, DO-41, Axial | Standard Recovery >500ns, > 200mA (Io) | Standard | 100V | 1A | 100V | 10μA @ 100V | 1V @ 1A | 1A | 150°C Max | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N1186AR | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2010 | DO-203AB, DO-5, Stud | 1 | 4 Weeks | UPPER | SOLDER LUG | NOT SPECIFIED | 1N1186AR | 200°C | NOT SPECIFIED | 1 | O-MUPM-D1 | 40A | 800A | SINGLE | ANODE | GENERAL PURPOSE | SILICON | 10μA | 200V | 200V | Standard, Reverse Polarity | 200V | 40A | 1 | 10μA @ 50V | 1.1V @ 40A | -65°C~190°C | |||||||||||||||||||||||||||||||||||||||||||||||||
| SB07-03P-TD-E | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 125°C | -55°C | RoHS Compliant | 2012 | /files/onsemiconductor-sb0703ptde-datasheets-2978.pdf | TO-243AA | Lead Free | 3 | 12 Weeks | 3 | LAST SHIPMENTS (Last Updated: 1 week ago) | yes | EAR99 | HIGH RELIABILITY | No | e6 | Tin/Bismuth (Sn/Bi) | FLAT | 3 | Single | 1 | 700mA | 5A | 80μA | CATHODE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 30V | 5A | 10 ns | Schottky | 30V | 700mA | 0.7A | 26pF @ 10V 1MHz | 80μA @ 15V | 550mV @ 700mA | -55°C~125°C | ||||||||||||||||||||||||||||||||||||||||
| SB10-04A3-BT | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 1998 | /files/onsemiconductor-sb1004a3bt-datasheets-2980.pdf | DO-204AL, DO-41, Axial | 2 | 4 Weeks | EAR99 | 8541.10.00.80 | e6 | Tin/Bismuth (Sn/Bi) | WIRE | 1 | Not Qualified | O-PALF-W2 | 1A | 580mV | SINGLE | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 25A | 1mA | Schottky | 40V | 1A | 1A | 45pF @ 10V 1MHz | 800μA @ 40V | 550mV @ 1A | 125°C Max | ||||||||||||||||||||||||||||||||||||||||||||||||
| DLM10E | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 150°C | -40°C | RoHS Compliant | 2007 | /files/onsemiconductor-dlm10eat1-datasheets-2845.pdf | DO-204AL, DO-41, Axial | Lead Free | 2 | 2 | EAR99 | No | 8541.10.00.80 | e3 | Tin (Sn) | WIRE | DLM10 | Single | 1 | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 20μA | 400V | 30A | 35 ns | Standard | 400V | 1A | 1A | 10μA @ 200V | 980mV @ 1A | 150°C Max | ||||||||||||||||||||||||||||||||||||||||||||||
| 1N8033-GA | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-1n8033ga-datasheets-2982.pdf | TO-276AA | 24 Weeks | EAR99 | 8541.10.00.80 | 1N8033 | 250°C | Single | 1 | Rectifier Diodes | 5A | 2.5V | 1.38 °C/W | No Recovery Time > 500mA (Io) | 32A | 650V | 0ns | Silicon Carbide Schottky | 650V | 4.3A | 8A | 274pF @ 1V 1MHz | 5μA @ 650V | 1.65V @ 5A | 4.3A DC | -55°C~250°C | ||||||||||||||||||||||||||||||||||||||||||||||||||
| DSF10TC-AT1 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2008 | /files/onsemiconductor-dsf10tb-datasheets-2865.pdf | DO-204AL, DO-41, Axial | 2 | EAR99 | 8541.10.00.80 | e3 | Tin (Sn) | WIRE | 1 | Not Qualified | O-PALF-W2 | SINGLE | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | Standard | 200V | 1A | 1A | 200V | 10μA @ 200V | 1V @ 1A | 150°C Max | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N8032-GA | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | Non-RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-1n8032ga-datasheets-2985.pdf | TO-257-3 | Contains Lead | 24 Weeks | EAR99 | 8541.10.00.80 | 1N8032 | 250°C | Single | 1 | Rectifier Diodes | 2.5A | 1.7V | 3.4 °C/W | No Recovery Time > 500mA (Io) | 32A | 650V | 0ns | Silicon Carbide Schottky | 650V | 2.5A | 8A | 274pF @ 1V 1MHz | 5μA @ 650V | 1.3V @ 2.5A | -55°C~250°C | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SB10-03A2-BT | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 125°C | -40°C | RoHS Compliant | 1997 | /files/onsemiconductor-sb1003a3-datasheets-2855.pdf | DO-204AL, DO-41, Axial | Lead Free | 2 | 2 | yes | EAR99 | 8541.10.00.80 | e3 | Tin (Sn) | WIRE | SB10-03 | Single | 1 | Rectifier Diodes | Not Qualified | 550mV | 25A | 1mA | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 40A | 30 ns | Schottky | 30V | 1A | 1A | 1mA @ 30V | 550mV @ 1A | 150°C Max | |||||||||||||||||||||||||||||||||||||||||||
| RD0506T-TL-H | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | RoHS Compliant | 2012 | /files/onsemiconductor-rd0506th-datasheets-2932.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 2 Weeks | 3 | LAST SHIPMENTS (Last Updated: 2 weeks ago) | yes | EAR99 | No | e6 | Tin/Bismuth (Sn/Bi) | Halogen Free | YES | GULL WING | 3 | Single | 1 | R-PSSO-G2 | 5A | 80A | CATHODE | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 50μA | 600V | 80A | 50 ns | Standard | 600V | 5A | 1 | 5A | 50μA @ 600V | 1.6V @ 5A | 150°C Max | ||||||||||||||||||||||||||||||||||||||
| DSK10C-ET1 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/onsemiconductor-dsk10b-datasheets-2812.pdf | R-1, Axial | Lead Free | 2 | yes | EAR99 | e3 | Tin (Sn) | WIRE | DSK10C | 150°C | 1 | O-PALF-W2 | SINGLE | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | Standard | 200V | 1A | 1A | 200V | 10μA @ 200V | 1.1V @ 1A | 150°C Max | |||||||||||||||||||||||||||||||||||||||||||||||||||
| SB10-05A3 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 125°C | -40°C | RoHS Compliant | 1998 | /files/onsemiconductor-sb1005a2-datasheets-2853.pdf | DO-204AL, DO-41, Axial | 2 | 2 | EAR99 | No | 8541.10.00.80 | e3 | Tin (Sn) | WIRE | SB10-05 | Single | 1 | 25A | 1mA | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1mA | 50V | 25A | 30 ns | Schottky | 50V | 1A | 1A | 1mA @ 50V | 580mV @ 1A | 125°C Max | |||||||||||||||||||||||||||||||||||||||||||||
| CDBB260SLR-HF | Comchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/comchiptechnology-cdbb240slrhf-datasheets-2146.pdf | DO-214AA, SMB | EAR99 | 8541.10.00.80 | CDBB260 | 150°C | 1 | Rectifier Diodes | SINGLE | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 60V | 2A | 50A | 2A | 30pF @ 4V 1MHz | 500μA @ 60V | 500mV @ 2A | 2A DC | -50°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSK10E-ET1 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2007 | /files/onsemiconductor-dsk10b-datasheets-2812.pdf | R-1, Axial | Lead Free | 2 | yes | EAR99 | e3 | Tin (Sn) | WIRE | DSK10E | 150°C | 1 | O-PALF-W2 | SINGLE | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | Standard | 400V | 1A | 1A | 400V | 10μA @ 400V | 1.1V @ 1A | 150°C Max |
