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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Forward Current | Forward Voltage | Max Surge Current | Case Connection | Application | Speed | Diode Element Material | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Number of Phases | Output Current-Max | Reverse Voltage (DC) | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| EGL34BHE3/83 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-bym07200e398-datasheets-1309.pdf | DO-213AA (Glass) | 2 | 19 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.70 | e3 | Matte Tin (Sn) | END | WRAP AROUND | 260 | EGL34B | 2 | Single | 40 | 1 | Rectifier Diodes | 500mA | 10A | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 100V | 10A | 100V | 50 ns | 50 ns | Standard | 100V | 500mA | 0.5A | 7pF @ 4V 1MHz | 5μA @ 100V | 1.25V @ 500mA | -65°C~175°C | ||||||||||||||||||||
| EGP30FHE3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-egp30ae373-datasheets-2431.pdf | DO-201AA, DO-27, Axial | 2 | 20 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | EGP30F | 2 | Single | 1 | Rectifier Diodes | O-PALF-W2 | 125A | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 300V | 125A | 300V | 50 ns | 50 ns | Standard | 300V | 3A | 1 | 3A | 5μA @ 300V | 1.25V @ 3A | -65°C~150°C | |||||||||||||||||||||||
| ES2AHE3/5BT | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 1999 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-es2be352t-datasheets-6983.pdf | DO-214AA, SMB | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | ES2A | 2 | Single | 30 | 1 | Rectifier Diodes | 2A | 900mV | 50A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 50V | 50A | 50V | 30 ns | 30 ns | Standard | 50V | 2A | 1 | 2A | 18pF @ 4V 1MHz | 10μA @ 50V | 900mV @ 2A | -55°C~150°C | ||||||||||||||||||||
| ES3GHE3/9AT | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-es3fe357t-datasheets-1562.pdf | DO-214AB, SMC | 2 | No | ES3G | Single | DO-214AB (SMC) | 3A | 1.1V | 100A | Fast Recovery =< 500ns, > 200mA (Io) | 10μA | 400V | 100A | 400V | 50 ns | 50 ns | Standard | 400V | 3A | 30pF @ 4V 1MHz | 400V | 10μA @ 400V | 1.1V @ 3A | 3A | -55°C~150°C | |||||||||||||||||||||||||||||||||||
| ES1BHE3/5AT | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-es1de35at-datasheets-9740.pdf | DO-214AC, SMA | 2 | No | ES1B | Single | DO-214AC (SMA) | 1A | 920mV | 30A | Fast Recovery =< 500ns, > 200mA (Io) | 5μA | 100V | 30A | 100V | 25 ns | 25 ns | Standard | 100V | 1A | 10pF @ 4V 1MHz | 100V | 5μA @ 100V | 920mV @ 1A | 1A | -55°C~150°C | |||||||||||||||||||||||||||||||||||
| 1N4937L-T | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -65°C | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/diodesincorporated-1n4937l-datasheets-3371.pdf | DO-204AL, DO-41, Axial | 5.2mm | 2.7mm | 2.7mm | 2 | 350.003213mg | 2 | EAR99 | FAST SWITCH | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | 260 | 1N4937 | 2 | Single | 40 | 1 | 1A | 1.2V | 30A | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 600V | 30A | 200 ns | 200 ns | Standard | 600V | 1A | 1A | 600V | 15pF @ 4V 1MHz | 5μA @ 600V | 1.2V @ 1A | -65°C~150°C | ||||||||||||||||||||
| ES3FHE3/9AT | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-es3fe357t-datasheets-1562.pdf | DO-214AB, SMC | 2 | No | ES3F | Single | DO-214AB (SMC) | 3A | 100A | Fast Recovery =< 500ns, > 200mA (Io) | 10μA | 300V | 100A | 300V | 50 ns | 50 ns | Standard | 300V | 3A | 30pF @ 4V 1MHz | 300V | 10μA @ 300V | 1.1V @ 3A | 3A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||
| ES1PBHE3/85A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eSMP® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-es1pdm384a-datasheets-0476.pdf | DO-220AA | ES1PB | Single | DO-220AA (SMP) | 30A | Fast Recovery =< 500ns, > 200mA (Io) | 5μA | 100V | 25 ns | 15 ns | Standard | 100V | 1A | 10pF @ 4V 1MHz | 100V | 5μA @ 100V | 920mV @ 1A | 1A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||
| EGP30GHE3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-egp30ae373-datasheets-2431.pdf | DO-201AA, DO-27, Axial | 2 | 20 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | EGP30G | 2 | Single | 1 | Rectifier Diodes | O-PALF-W2 | 125A | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 400V | 125A | 400V | 50 ns | 50 ns | Standard | 400V | 3A | 1 | 3A | 5μA @ 400V | 1.25V @ 3A | -65°C~150°C | |||||||||||||||||||||||
| ES3DHE3/9AT | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-es3ae357t-datasheets-1550.pdf | DO-214AB, SMC | 2 | No | ES3D | Single | DO-214AB (SMC) | 3A | 900mV | 100A | Fast Recovery =< 500ns, > 200mA (Io) | 10μA | 200V | 100A | 200V | 30ns | 30 ns | Standard | 200V | 3A | 45pF @ 4V 1MHz | 200V | 10μA @ 200V | 900mV @ 3A | 3A | -55°C~150°C | |||||||||||||||||||||||||||||||||||
| BYM11-1000HE3/97 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-rgl41je396-datasheets-0192.pdf | DO-213AB, MELF (Glass) | 2 | 19 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | Tin | unknown | 8541.10.00.80 | e3 | END | WRAP AROUND | NOT SPECIFIED | BYM11-1000 | 2 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | 1A | 30A | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 1kV | 30A | 1kV | 500 ns | 500 ns | Standard | 1kV | 1A | 1A | 15pF @ 4V 1MHz | 1000V | 5μA @ 1000V | 1.3V @ 1A | -65°C~175°C | ||||||||||||||||||
| DGP15HE3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-dgp15e373-datasheets-0402.pdf | DO-204AC, DO-15, Axial | No | DGP15 | Single | DO-204AC (DO-15) | 40A | Standard Recovery >500ns, > 200mA (Io) | 5μA | 1.5kV | 40A | 1.5kV | 20 μs | 20 μs | Standard | 1.5kV | 1.5A | 1500V | 5μA @ 1500V | 1.1V @ 1A | 1.5A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||
| BYD33GGP-E3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-byd33kgphe354-datasheets-0997.pdf | DO-204AL, DO-41, Axial | 2 | No | BYD33G | Single | DO-204AL (DO-41) | 1.3V | 30A | Small Signal =< 200mA (Io), Any Speed | 5μA | 400V | 30A | 400V | 150 ns | 150 ns | Standard | 400V | 1A | 15pF @ 4V 1MHz | 400V | 5μA @ 400V | 1.3V @ 1A | 1A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||
| EGP50DHE3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-egp50de373-datasheets-4865.pdf | DO-201AA, DO-27, Axial | 2 | 20 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | EGP50D | 2 | Single | 1 | Rectifier Diodes | O-PALF-W2 | 5A | 150A | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 200V | 150A | 200V | 50 ns | 50 ns | Standard | 200V | 5A | 1 | 5A | 95pF @ 4V 1MHz | 5μA @ 200V | 950mV @ 5A | -65°C~150°C | |||||||||||||||||||||
| EGP50B-E3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2016 | /files/vishaysemiconductordiodesdivision-egp50de373-datasheets-4865.pdf | DO-201AA, DO-27, Axial | Lead Free | 2 | 20 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | EGP50B | 2 | Single | 1 | Rectifier Diodes | O-PALF-W2 | 5A | 950mV | 150A | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 100V | 150A | 100V | 50 ns | 50 ns | Standard | 100V | 5A | 1 | 5A | 95pF @ 4V 1MHz | 5μA @ 100V | 950mV @ 5A | -65°C~150°C | |||||||||||||||||||
| EGP30D-E3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2012 | /files/vishaysemiconductordiodesdivision-egp30ae373-datasheets-2431.pdf | DO-201AA, DO-27, Axial | 2 | 51 Weeks | 20 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | EGP30D | 2 | Single | 1 | Rectifier Diodes | O-PALF-W2 | 950mV | 125A | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 200V | 125A | 200V | 50 ns | 50 ns | Standard | 200V | 3A | 1 | 3A | 5μA @ 200V | 950mV @ 3A | -65°C~150°C | |||||||||||||||||||||
| EGP10GHE3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-egp10ce354-datasheets-0551.pdf | DO-204AL, DO-41, Axial | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | EGP10G | 2 | Single | 1 | Rectifier Diodes | 30A | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 400V | 30A | 400V | 50 ns | 50 ns | Standard | 400V | 1A | 1A | 15pF @ 4V 1MHz | 5μA @ 400V | 1.25V @ 1A | -65°C~150°C | |||||||||||||||||||||||||
| EGP10FHE3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-egp10ce354-datasheets-0551.pdf | DO-204AL, DO-41, Axial | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | EGP10F | 2 | Single | 1 | Rectifier Diodes | 30A | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 300V | 30A | 300V | 50 ns | 50 ns | Standard | 300V | 1A | 1A | 15pF @ 4V 1MHz | 5μA @ 300V | 1.25V @ 1A | -65°C~150°C | |||||||||||||||||||||||||
| BYD13GGP-E3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-byd13jgphe354-datasheets-0967.pdf | DO-204AL, DO-41, Axial | No | BYD13G | Single | DO-204AL (DO-41) | 1A | 30A | Standard Recovery >500ns, > 200mA (Io) | 5μA | 400V | 30A | 400V | 3 μs | 3 μs | Standard | 400V | 1A | 8pF @ 4V 1MHz | 400V | 5μA @ 200V | 1A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||
| EGP10BHE3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-egp10ce354-datasheets-0551.pdf | DO-204AL, DO-41, Axial | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | EGP10B | 2 | Single | 1 | Rectifier Diodes | 30A | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 100V | 30A | 100V | 50 ns | 50 ns | Standard | 100V | 1A | 1A | 22pF @ 4V 1MHz | 5μA @ 100V | 950mV @ 1A | -65°C~150°C | |||||||||||||||||||||||||
| EGP10CHE3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-egp10ce354-datasheets-0551.pdf | DO-204AL, DO-41, Axial | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | EGP10C | 2 | Single | 1 | Rectifier Diodes | 950mV | 30A | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 150V | 30A | 150V | 50 ns | 50 ns | Standard | 150V | 1A | 1A | 22pF @ 4V 1MHz | 5μA @ 150V | 950mV @ 1A | -65°C~150°C | ||||||||||||||||||||||||
| BY398P-E3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 125°C | -50°C | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-by397pe354-datasheets-5429.pdf | DO-201AD, Axial | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | MATTE TIN | WIRE | 2 | Single | 1 | Rectifier Diodes | 1.25V | 100A | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 400V | 100A | 400V | 500 ns | 500 ns | Standard | 400V | 3A | 1 | 3A | 28pF @ 4V 1MHz | 10μA @ 400V | 1.25V @ 3A | -50°C~125°C | ||||||||||||||||||||||||
| EGP20AHE3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-egp20de373-datasheets-1541.pdf | DO-204AC, DO-15, Axial | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | EGP20A | 2 | Single | 1 | Rectifier Diodes | O-PALF-W2 | 75A | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 50V | 75A | 50V | 50 ns | 50 ns | Standard | 50V | 2A | 1 | 2A | 70pF @ 4V 1MHz | 5μA @ 50V | 950mV @ 2A | -65°C~150°C | |||||||||||||||||||||||
| EGP10BEHE3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-egp10ce354-datasheets-0551.pdf | DO-204AL, DO-41, Axial | 2 | No | EGP10B | Single | DO-204AL (DO-41) | 30A | Fast Recovery =< 500ns, > 200mA (Io) | 5μA | 100V | 30A | 100V | 50 ns | 50 ns | Standard | 100V | 1A | 22pF @ 4V 1MHz | 100V | 5μA @ 100V | 950mV @ 1A | 1A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||
| EGP20FHE3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-egp20de373-datasheets-1541.pdf | DO-204AC, DO-15, Axial | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | EGP20F | 2 | Single | 1 | Rectifier Diodes | O-PALF-W2 | 75A | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 300V | 75A | 300V | 50 ns | 50 ns | Standard | 300V | 2A | 1 | 2A | 45pF @ 4V 1MHz | 5μA @ 300V | 1.25V @ 2A | -65°C~150°C | |||||||||||||||||||||||
| BYS12-90HE3/TR3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-bys1290e3tr-datasheets-0252.pdf | DO-214AC, SMA | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | Tin | unknown | 8541.10.00.80 | e3 | DUAL | C BEND | 260 | BYS12-90 | 2 | Single | 40 | 1 | Rectifier Diodes | Not Qualified | 1.5A | 750mV | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 40A | 100μA | 90V | 40A | Schottky | 90V | 1.5A | 1 | 100μA @ 90V | 750mV @ 1A | -55°C~150°C | ||||||||||||||||||||||||
| EGP50CHE3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-egp50de373-datasheets-4865.pdf | DO-201AA, DO-27, Axial | 2 | 20 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | EGP50C | 2 | Single | 1 | Rectifier Diodes | O-PALF-W2 | 5A | 150A | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 150V | 150A | 150V | 50 ns | 50 ns | Standard | 150V | 5A | 1 | 5A | 95pF @ 4V 1MHz | 5μA @ 150V | 950mV @ 5A | -65°C~150°C | |||||||||||||||||||||
| EGP10CEHE3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-egp10ce354-datasheets-0551.pdf | DO-204AL, DO-41, Axial | 2 | No | EGP10C | Single | DO-204AL (DO-41) | 30A | Fast Recovery =< 500ns, > 200mA (Io) | 5μA | 150V | 30A | 150V | 50ns | 50 ns | Standard | 150V | 1A | 22pF @ 4V 1MHz | 150V | 5μA @ 150V | 950mV @ 1A | 1A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||
| ES1DHE3/5AT | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-es1de35at-datasheets-9740.pdf | DO-214AC, SMA | 2 | No | ES1D | Single | DO-214AC (SMA) | 1A | 920mV | 30A | Fast Recovery =< 500ns, > 200mA (Io) | 5μA | 200V | 30A | 200V | 25 ns | 25 ns | Standard | 200V | 1A | 10pF @ 4V 1MHz | 200V | 5μA @ 200V | 920mV @ 1A | 1A | -55°C~150°C | |||||||||||||||||||||||||||||||||||
| EGP20BHE3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-egp20de373-datasheets-1541.pdf | DO-204AC, DO-15, Axial | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | EGP20B | 2 | Single | 1 | Rectifier Diodes | 950mV | 75A | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 100V | 75A | 100V | 50 ns | 50 ns | Standard | 100V | 2A | 1 | 2A | 70pF @ 4V 1MHz | 5μA @ 100V | 950mV @ 2A | -65°C~150°C |
