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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | RoHS Status | Published | Datasheet | Package / Case | Number of Terminations | Factory Lead Time | REACH SVHC | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Case Connection | Application | Speed | Diode Element Material | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Number of Phases | Output Current-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| EGL34DHE3/83 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-bym07200e398-datasheets-1309.pdf | DO-213AA (Glass) | 2 | 19 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.70 | e3 | Matte Tin (Sn) | END | WRAP AROUND | 260 | EGL34D | 2 | Single | 40 | 1 | Rectifier Diodes | 500mA | 10A | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 200V | 10A | 200V | 50 ns | 50 ns | Standard | 200V | 500mA | 0.5A | 7pF @ 4V 1MHz | 5μA @ 200V | 1.25V @ 500mA | -65°C~175°C | ||||||||||||||||
| EGP20BHE3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-egp20de373-datasheets-1541.pdf | DO-204AC, DO-15, Axial | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | EGP20B | 2 | Single | 1 | Rectifier Diodes | 950mV | 75A | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 100V | 75A | 100V | 50 ns | 50 ns | Standard | 100V | 2A | 1 | 2A | 70pF @ 4V 1MHz | 5μA @ 100V | 950mV @ 2A | -65°C~150°C | ||||||||||||||||||
| EGL34FHE3/83 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-bym07200e398-datasheets-1309.pdf | DO-213AA (Glass) | 2 | 19 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.70 | e3 | Matte Tin (Sn) | END | WRAP AROUND | 260 | EGL34F | 2 | Single | 40 | 1 | Rectifier Diodes | 500mA | 10A | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 300V | 10A | 300V | 50 ns | 50 ns | Standard | 300V | 500mA | 0.5A | 7pF @ 4V 1MHz | 5μA @ 300V | 1.35V @ 500mA | -65°C~175°C | ||||||||||||||||
| EGL41GHE3/97 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-bym12200e396-datasheets-0998.pdf | DO-213AB, MELF (Glass) | 19 Weeks | 2 | yes | EAR99 | No | 8541.10.00.80 | EGL41G | 2 | Single | 1A | 30A | Fast Recovery =< 500ns, > 200mA (Io) | 5μA | 400V | 30A | 400V | 50 ns | 50 ns | Standard | 400V | 1A | 14pF @ 4V 1MHz | 5μA @ 400V | 1.25V @ 1A | -65°C~175°C | |||||||||||||||||||||||||||||
| BYS10-35HE3/TR3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-bys1045e3tr-datasheets-7421.pdf | DO-214AC, SMA | 19 Weeks | yes | EAR99 | Tin | unknown | 8541.10.00.80 | BYS10-35 | 2 | Single | 1.5A | 40A | 500μA | Fast Recovery =< 500ns, > 200mA (Io) | 500μA | 35V | 40A | Schottky | 35V | 1.5A | 500μA @ 35V | 500mV @ 1A | -65°C~150°C | |||||||||||||||||||||||||||||||||
| ES1PA-E3/85A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eSMP® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | DO-220AA | 2 | ES1PA | Single | DO-220AA (SMP) | 920mV | 30A | Fast Recovery =< 500ns, > 200mA (Io) | 5μA | 30A | 50V | 25 ns | 15 ns | Standard | 50V | 1A | 10pF @ 4V 1MHz | 50V | 5μA @ 50V | 920mV @ 1A | 1A | -55°C~150°C | |||||||||||||||||||||||||||||||||||
| EGP50F-E3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2016 | /files/vishaysemiconductordiodesdivision-egp50de373-datasheets-4865.pdf | DO-201AA, DO-27, Axial | 2 | Unknown | 20 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | EGP50F | 2 | Single | 1 | Rectifier Diodes | O-PALF-W2 | 5A | 1.6V | 150A | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 50A | 5μA | 300V | 150A | 300V | 50 ns | 50 ns | Standard | 300V | 5A | 1 | 5A | 75pF @ 4V 1MHz | 5μA @ 300V | 1.25V @ 5A | -65°C~150°C | ||||||||||||||
| EGL34GHE3/83 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-bym07200e398-datasheets-1309.pdf | DO-213AA (Glass) | 19 Weeks | 2 | yes | EAR99 | No | 8541.10.00.70 | EGL34G | 2 | Single | 500mA | 10A | Fast Recovery =< 500ns, > 200mA (Io) | 5μA | 400V | 10A | 400V | 50 ns | 50 ns | Standard | 400V | 500mA | 7pF @ 4V 1MHz | 5μA @ 400V | 1.35V @ 500mA | -65°C~175°C | |||||||||||||||||||||||||||||
| EGP30G-E3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-egp30ae373-datasheets-2431.pdf | DO-201AA, DO-27, Axial | 20 | yes | EAR99 | No | 8541.10.00.80 | EGP30G | 2 | Single | 1.25V | 125A | Fast Recovery =< 500ns, > 200mA (Io) | 5μA | 400V | 125A | 400V | 50 ns | 50 ns | Standard | 400V | 3A | 5μA @ 400V | 1.25V @ 3A | -65°C~150°C | |||||||||||||||||||||||||||||||
| EGP50BHE3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-egp50de373-datasheets-4865.pdf | DO-201AA, DO-27, Axial | 2 | 20 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | EGP50B | 2 | Single | 1 | Rectifier Diodes | O-PALF-W2 | 5A | 150A | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 100V | 150A | 100V | 50 ns | 50 ns | Standard | 100V | 5A | 1 | 5A | 95pF @ 4V 1MHz | 5μA @ 100V | 950mV @ 5A | -65°C~150°C | |||||||||||||||||
| EGP50FHE3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-egp50de373-datasheets-4865.pdf | DO-201AA, DO-27, Axial | 2 | 20 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | EGP50F | 2 | Single | 1 | Rectifier Diodes | O-PALF-W2 | 5A | 150A | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 300V | 150A | 300V | 50 ns | 50 ns | Standard | 300V | 5A | 1 | 5A | 75pF @ 4V 1MHz | 5μA @ 300V | 1.25V @ 5A | -65°C~150°C | |||||||||||||||||
| ES1CHE3/5AT | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-es1de35at-datasheets-9740.pdf | DO-214AC, SMA | 2 | No | ES1C | Single | DO-214AC (SMA) | 1A | 30A | Fast Recovery =< 500ns, > 200mA (Io) | 5μA | 150V | 30A | 150V | 25 ns | 25 ns | Standard | 150V | 1A | 10pF @ 4V 1MHz | 150V | 5μA @ 150V | 920mV @ 1A | 1A | -55°C~150°C | ||||||||||||||||||||||||||||||||
| EGP30A-E3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-egp30ae373-datasheets-2431.pdf | DO-201AA, DO-27, Axial | 2 | 20 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | EGP30A | 2 | Single | 1 | Rectifier Diodes | O-PALF-W2 | 125A | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 20V | 125A | 20V | 50 ns | 50 ns | Standard | 50V | 3A | 1 | 3A | 5μA @ 50V | 950mV @ 3A | -65°C~150°C | |||||||||||||||||||
| EGP50AHE3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-egp50de373-datasheets-4865.pdf | DO-201AA, DO-27, Axial | 2 | 20 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | EGP50A | 2 | Single | 1 | Rectifier Diodes | O-PALF-W2 | 5A | 150A | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 50V | 150A | 50V | 50 ns | 50 ns | Standard | 50V | 5A | 1 | 5A | 95pF @ 4V 1MHz | 5μA @ 50V | 950mV @ 5A | -65°C~150°C | |||||||||||||||||
| EGP10GEHE3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-egp10ce354-datasheets-0551.pdf | DO-204AL, DO-41, Axial | 2 | No | EGP10G | Single | DO-204AL (DO-41) | 30A | Fast Recovery =< 500ns, > 200mA (Io) | 5μA | 400V | 30A | 400V | 50 ns | 50 ns | Standard | 400V | 1A | 15pF @ 4V 1MHz | 400V | 5μA @ 400V | 1.25V @ 1A | 1A | -65°C~150°C | ||||||||||||||||||||||||||||||||
| EGL41FHE3/97 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-bym12200e396-datasheets-0998.pdf | DO-213AB, MELF (Glass) | 2 | 19 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | END | WRAP AROUND | 250 | EGL41F | 2 | Single | 40 | 1 | Rectifier Diodes | 1A | 30A | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 300V | 30A | 300V | 50 ns | 50 ns | Standard | 300V | 1A | 1A | 14pF @ 4V 1MHz | 5μA @ 300V | 1.25V @ 1A | -65°C~175°C | ||||||||||||||||
| BYS459B-1500E3/81 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-bys459b1500e345-datasheets-3924.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | BYS459-1500 | Common Cathode | TO-263AB | 130A | Fast Recovery =< 500ns, > 200mA (Io) | 250μA | 1.5kV | 350 ns | 350 ns | Standard | 1.5kV | 6.5A | 1500V | 250μA @ 1500V | 1.3V @ 6.5A | 6.5A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||
| EGP30DHE3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-egp30ae373-datasheets-2431.pdf | DO-201AA, DO-27, Axial | 2 | 20 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | EGP30D | 2 | Single | 1 | Rectifier Diodes | O-PALF-W2 | 125A | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 200V | 125A | 200V | 50 ns | 50 ns | Standard | 200V | 3A | 1 | 3A | 5μA @ 200V | 950mV @ 3A | -65°C~150°C | |||||||||||||||||||
| EGL41CHE3/97 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-bym12200e396-datasheets-0998.pdf | DO-213AB, MELF (Glass) | 2 | 19 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | END | WRAP AROUND | 250 | EGL41C | 2 | Single | 40 | 1 | Rectifier Diodes | 1A | 30A | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 150V | 30A | 150V | 50 ns | 50 ns | Standard | 150V | 1A | 1A | 20pF @ 4V 1MHz | 5μA @ 150V | 1V @ 1A | -65°C~175°C | ||||||||||||||||
| EGL41AHE3/97 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-bym12200e396-datasheets-0998.pdf | DO-213AB, MELF (Glass) | 2 | 19 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | END | WRAP AROUND | 250 | EGL41A | 2 | Single | 40 | 1 | Rectifier Diodes | 1A | 30A | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 50V | 30A | 50V | 50 ns | 50 ns | Standard | 50V | 1A | 1A | 20pF @ 4V 1MHz | 5μA @ 50V | 1V @ 1A | -65°C~175°C | ||||||||||||||||
| EGP20GHE3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-egp20de373-datasheets-1541.pdf | DO-204AC, DO-15, Axial | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | EGP20G | 2 | Single | 1 | Rectifier Diodes | O-PALF-W2 | 75A | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 400V | 75A | 400V | 50 ns | 50 ns | Standard | 400V | 2A | 1 | 2A | 45pF @ 4V 1MHz | 5μA @ 400V | 1.25V @ 2A | -65°C~150°C | |||||||||||||||||||
| EGP30B-E3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2012 | /files/vishaysemiconductordiodesdivision-egp30ae373-datasheets-2431.pdf | DO-201AA, DO-27, Axial | 2 | 20 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | EGP30B | 2 | Single | 1 | Rectifier Diodes | O-PALF-W2 | 950mV | 125A | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 100V | 125A | 100V | 50 ns | 50 ns | Standard | 100V | 3A | 1 | 3A | 5μA @ 100V | 950mV @ 3A | -65°C~150°C | ||||||||||||||||||
| EGP20CHE3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-egp20de373-datasheets-1541.pdf | DO-204AC, DO-15, Axial | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | EGP20C | 2 | Single | 1 | Rectifier Diodes | O-PALF-W2 | 75A | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 150V | 75A | 150V | 50 ns | 50 ns | Standard | 150V | 2A | 1 | 2A | 70pF @ 4V 1MHz | 5μA @ 150V | 950mV @ 2A | -65°C~150°C | |||||||||||||||||||
| EGP30AHE3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-egp30ae373-datasheets-2431.pdf | DO-201AA, DO-27, Axial | 2 | 20 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | EGP30A | 2 | Single | 1 | Rectifier Diodes | O-PALF-W2 | 125A | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 50V | 125A | 50V | 50 ns | 50 ns | Standard | 50V | 3A | 1 | 3A | 5μA @ 50V | 950mV @ 3A | -65°C~150°C | |||||||||||||||||||
| BYM07-100HE3/83 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-bym07200e398-datasheets-1309.pdf | DO-213AA (Glass) | 2 | 19 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | Tin | unknown | 8541.10.00.70 | e3 | END | WRAP AROUND | 260 | BYM07-100 | 2 | Single | 40 | 1 | Rectifier Diodes | Not Qualified | 500mA | 10A | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 100V | 10A | 100V | 50 ns | 50 ns | Standard | 100V | 500mA | 0.5A | 7pF @ 4V 1MHz | 5μA @ 100V | 1.25V @ 500mA | -65°C~175°C | |||||||||||||||
| EGP30C-E3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-egp30ae373-datasheets-2431.pdf | DO-201AA, DO-27, Axial | 2 | 12 Weeks | 20 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | EGP30C | 2 | Single | 1 | Rectifier Diodes | O-PALF-W2 | 950mV | 125A | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 150V | 125A | 150V | 50 ns | 50 ns | Standard | 150V | 3A | 1 | 3A | 5μA @ 150V | 950mV @ 3A | -65°C~150°C | |||||||||||||||||
| EGP30CHE3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-egp30ae373-datasheets-2431.pdf | DO-201AA, DO-27, Axial | 2 | 20 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | EGP30C | 2 | Single | 1 | Rectifier Diodes | O-PALF-W2 | 125A | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 150V | 125A | 150V | 50 ns | 50 ns | Standard | 150V | 3A | 1 | 3A | 5μA @ 150V | 950mV @ 3A | -65°C~150°C | |||||||||||||||||||
| EGP20DHE3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-egp20de373-datasheets-1541.pdf | DO-204AC, DO-15, Axial | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | EGP20D | 2 | Single | 1 | Rectifier Diodes | O-PALF-W2 | 75A | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 200V | 75A | 200V | 50 ns | 50 ns | Standard | 200V | 2A | 1 | 2A | 70pF @ 4V 1MHz | 5μA @ 200V | 950mV @ 2A | -65°C~150°C | |||||||||||||||||||
| BYS10-45HE3/TR3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2010 | /files/vishaysemiconductordiodesdivision-bys1045e3tr-datasheets-7421.pdf | DO-214AC, SMA | 19 Weeks | 2 | yes | EAR99 | Tin | unknown | 8541.10.00.80 | BYS10-45 | 2 | Single | 1.5A | 500mV | 40A | 500μA | Fast Recovery =< 500ns, > 200mA (Io) | 500μA | 45V | 40A | Schottky | 45V | 1.5A | 500μA @ 45V | 500mV @ 1A | -65°C~150°C | |||||||||||||||||||||||||||||||
| EGP10AHE3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-egp10ce354-datasheets-0551.pdf | DO-204AL, DO-41, Axial | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | EGP10A | 2 | Single | 1 | Rectifier Diodes | 30A | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 50V | 30A | 50V | 50 ns | 50 ns | Standard | 50V | 1A | 1A | 22pF @ 4V 1MHz | 5μA @ 50V | 950mV @ 1A | -65°C~150°C |
