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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | RoHS Status | Published | Datasheet | Package / Case | Number of Terminations | Factory Lead Time | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Forward Current | Forward Voltage | Max Surge Current | Case Connection | Application | Speed | Diode Element Material | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Number of Phases | Output Current-Max | Reverse Recovery Time-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| BA157GPHE3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ba159gpe373-datasheets-2400.pdf | DO-204AL, DO-41, Axial | 2 | 2 | yes | EAR99 | HIGH RELIABILITY | Tin | unknown | 8541.10.00.80 | e3 | WIRE | NOT SPECIFIED | BA157 | 2 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | 20A | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 400V | 20A | 400V | 150 ns | 150 ns | Standard | 400V | 1A | 1A | 15pF @ 4V 1MHz | 5μA @ 400V | 1.3V @ 1A | -65°C~175°C | |||||||||||||||||
| 1N5614GPHE3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-1n5614gpe373-datasheets-4769.pdf | DO-204AC, DO-15, Axial | 2 | No | 1N5614 | Single | DO-204AC (DO-15) | 50A | Standard Recovery >500ns, > 200mA (Io) | 500nA | 200V | 50A | 200V | 2 μs | 2 μs | Standard | 200V | 1A | 45pF @ 12V 1MHz | 200V | 500nA @ 200V | 1.2V @ 1A | 1A | -65°C~175°C | |||||||||||||||||||||||||||||||
| AGP15-600-E3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-agp15400e354-datasheets-5324.pdf | DO-204AC, DO-15, Axial | AGP15 | Single | DO-204AC (DO-15) | 50A | Standard Recovery >500ns, > 200mA (Io) | 5μA | 600V | 2 μs | 2 μs | Avalanche | 600V | 1.5A | 600V | 5μA @ 600V | 1.1V @ 1.5A | 1.5A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||
| BYM07-50HE3/83 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-bym07200e398-datasheets-1309.pdf | DO-213AA (Glass) | 2 | 19 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | Tin | unknown | 8541.10.00.70 | e3 | END | WRAP AROUND | 260 | BYM07-50 | 2 | Single | 40 | 1 | Rectifier Diodes | Not Qualified | 500mA | 10A | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 50V | 10A | 50V | 50 ns | 50 ns | Standard | 50V | 500mA | 0.5A | 7pF @ 4V 1MHz | 5μA @ 50V | 1.25V @ 500mA | -65°C~175°C | ||||||||||||||
| BYM12-50HE3/97 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-bym12200e396-datasheets-0998.pdf | DO-213AB, MELF (Glass) | 2 | 19 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | Tin | unknown | 8541.10.00.80 | e3 | END | WRAP AROUND | 250 | BYM12-50 | 2 | Single | 40 | 1 | Rectifier Diodes | Not Qualified | 1A | 30A | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 50V | 30A | 50V | 50 ns | 50 ns | Standard | 50V | 1A | 1A | 20pF @ 4V 1MHz | 5μA @ 50V | 1V @ 1A | -65°C~175°C | ||||||||||||||
| GP30DHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gp30je354-datasheets-5190.pdf | DO-201AD, Axial | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | GP30D | 2 | Single | 1 | Rectifier Diodes | 125A | ISOLATED | HIGH VOLTAGE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 200V | 125A | 200V | 5 μs | 5 μs | Standard | 200V | 3A | 1 | 3A | 5μA @ 200V | 1.1V @ 3A | -65°C~175°C | |||||||||||||||||||
| BYX10GPHE3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-byx10gpe354-datasheets-9761.pdf | DO-204AL, DO-41, Axial | 2 | EAR99 | HIGH RELIABILITY, FREE WHEELING DIODE | Silver, Tin | unknown | 8541.10.00.70 | e3 | MATTE TIN | AEC-Q101 | WIRE | BYX10 | 2 | Single | 1 | O-PALF-W2 | 15A | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1μA | 1.6kV | 15A | 1.6kV | 2 μs | 2 μs | Standard | 1.6kV | 360mA | 0.36A | 1600V | 1μA @ 1600V | 1.6V @ 2A | -65°C~175°C | |||||||||||||||||||||
| BA158GPEHE3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ba159gpe373-datasheets-2400.pdf | DO-204AL, DO-41, Axial | BA158GP | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 250 ns | Standard | 600V | 1A | 15pF @ 4V 1MHz | 600V | 5μA @ 600V | 1.3V @ 1A | 1A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||
| GPP60G-E3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gpp60be373-datasheets-5107.pdf | P600, Axial | 2 | 14 Weeks | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | NOT APPLICABLE | GPP60G | 2 | Single | NOT APPLICABLE | 1 | Rectifier Diodes | Not Qualified | O-PALF-W2 | 500A | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 400V | 500A | 400V | 5.5 μs | 5.5 μs | Standard | 400V | 6A | 1 | 6A | 5μA @ 400V | 1.1V @ 6A | -55°C~175°C | ||||||||||||||||
| BYM12-200HE3/97 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-bym12200e396-datasheets-0998.pdf | DO-213AB, MELF (Glass) | 2 | 19 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | Tin | unknown | 8541.10.00.80 | e3 | END | WRAP AROUND | 250 | BYM12-200 | 2 | Single | 40 | 1 | Rectifier Diodes | Not Qualified | 1A | 30A | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 200V | 30A | 200V | 50 ns | 50 ns | Standard | 200V | 1A | 1A | 20pF @ 4V 1MHz | 5μA @ 200V | 1V @ 1A | -65°C~175°C | ||||||||||||||
| 1N4933GPHE3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-1n4934gpe354-datasheets-9941.pdf | DO-204AL, DO-41, Axial | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | Tin | unknown | 8541.10.00.80 | e3 | WIRE | NOT SPECIFIED | 1N4933 | 2 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | 30A | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 50V | 30A | 200 ns | 200 ns | Standard | 50V | 1A | 1A | 15pF @ 4V 1MHz | 5μA @ 50V | 1.2V @ 1A | -65°C~175°C | ||||||||||||||||||
| 1N4248GPHE3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 160°C | -65°C | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-1n4246gpe354-datasheets-8798.pdf | DO-204AL, DO-41, Axial | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | Tin | unknown | 8541.10.00.80 | e3 | WIRE | NOT SPECIFIED | 1N4248 | 2 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | 25A | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1μA | 800V | 25A | 800V | Standard | 800V | 1A | 1A | 8pF @ 4V 1MHz | 1μA @ 800V | 1.2V @ 1A | -65°C~160°C | |||||||||||||||||||
| BY448GPHE3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-by448gpe354-datasheets-5306.pdf | DO-204AC, DO-15, Axial | 2 | yes | Tin | unknown | BY448GP | 2 | Single | 40A | Standard Recovery >500ns, > 200mA (Io) | 5μA | 1.65kV | 40A | 1.65kV | 20 μs | 20 μs | Standard | 1.65kV | 1.5A | 1650V | 5μA @ 1650V | 1.6V @ 3A | -65°C~175°C | |||||||||||||||||||||||||||||||
| BY254GP-E3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-by251gpe373-datasheets-2914.pdf | DO-201AD, Axial | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | Tin | No | 8541.10.00.80 | e3 | WIRE | BY254 | 2 | Single | 1 | Rectifier Diodes | 1.1V | 100A | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 800V | 100A | 800V | 3 μs | 3 μs | Standard | 800V | 3A | 1 | 3A | 40pF @ 4V 1MHz | 5μA @ 800V | 1.1V @ 3A | -65°C~175°C | |||||||||||||||||
| BYM12-100HE3/97 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-bym12200e396-datasheets-0998.pdf | DO-213AB, MELF (Glass) | 2 | 19 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | Tin | unknown | 8541.10.00.80 | e3 | END | WRAP AROUND | 250 | BYM12-100 | 2 | Single | 40 | 1 | Rectifier Diodes | Not Qualified | 1A | 30A | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 100V | 30A | 100V | 50 ns | 50 ns | Standard | 100V | 1A | 1A | 20pF @ 4V 1MHz | 5μA @ 100V | 1V @ 1A | -65°C~175°C | ||||||||||||||
| BYD33DGP-E3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-byd33kgphe354-datasheets-0997.pdf | DO-204AL, DO-41, Axial | No | BYD33D | Single | DO-204AL (DO-41) | 30A | Fast Recovery =< 500ns, > 200mA (Io) | 5μA | 200V | 30A | 200V | 150 ns | 150 ns | Standard | 200V | 1A | 15pF @ 4V 1MHz | 200V | 5μA @ 200V | 1.3V @ 1A | 1A | -65°C~175°C | |||||||||||||||||||||||||||||||||
| GP10JEHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gp10we354-datasheets-8508.pdf | DO-204AL, DO-41, Axial | 2 | No | GP10J | Single | DO-204AL (DO-41) | 1A | 1.1V | 30A | Standard Recovery >500ns, > 200mA (Io) | 5μA | 600V | 30A | 600V | 3 μs | 3 μs | Standard | 600V | 1A | 8pF @ 4V 1MHz | 600V | 5μA @ 600V | 1.1V @ 1A | 1A | -65°C~175°C | |||||||||||||||||||||||||||||
| BY520-14EHE3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-by52016ee354-datasheets-3901.pdf | DO-204AL, DO-41, Axial | 2 | 2 | EAR99 | HIGH RELIABILITY | Tin | unknown | 8541.10.00.70 | e3 | AEC-Q101 | WIRE | 2 | Single | 1 | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 1.4kV | 20A | Standard | 1.4kV | 500mA | 0.5A | 0.5μs | 1400V | -65°C~175°C | ||||||||||||||||||||||||||||
| 1N4005GPHE3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-1n4007gpe354-datasheets-2720.pdf | DO-204AL, DO-41, Axial | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | Tin | No | 8541.10.00.80 | e3 | WIRE | 1N4005 | 2 | Single | 1 | Rectifier Diodes | 1.1V | 30A | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 600V | 30A | 600V | 2 μs | 2 μs | Standard | 600V | 1A | 1A | 8pF @ 4V 1MHz | 5μA @ 600V | 1.1V @ 1A | -65°C~175°C | |||||||||||||||||||
| BY133GP-E3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | DO-204AC, DO-15, Axial | BY133 | DO-204AC (DO-15) | 50A | Standard Recovery >500ns, > 200mA (Io) | 5μA | 1.6kV | 2μs | 2 μs | Standard | 1.3kV | 1A | 1300V | 5μA @ 1300V | 1.2V @ 2A | 1A | |||||||||||||||||||||||||||||||||||||||||
| BY396P-E3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 125°C | -50°C | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-by397pe354-datasheets-5429.pdf | DO-201AD, Axial | 2 | No | Single | DO-201AD | 1.25V | 100A | Fast Recovery =< 500ns, > 200mA (Io) | 10μA | 100V | 100A | 100V | 500 ns | 500 ns | Standard | 100V | 3A | 28pF @ 4V 1MHz | 100V | 10μA @ 100V | 1.25V @ 3A | 3A | -50°C~125°C | ||||||||||||||||||||||||||||||||
| 1N5619GPHE3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-1n5617gpe354-datasheets-3519.pdf | DO-204AC, DO-15, Axial | 2 | Tin | 1N5619 | Single | DO-204AC (DO-15) | 50A | Fast Recovery =< 500ns, > 200mA (Io) | 500nA | 600V | 50A | 600V | 250 ns | 250 ns | Standard | 600V | 1A | 25pF @ 4V 1MHz | 600V | 500nA @ 600V | 1.2V @ 1A | 1A | -65°C~175°C | |||||||||||||||||||||||||||||||
| BY500-200-E3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 125°C | -50°C | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-by500100e373-datasheets-4810.pdf | DO-201AD, Axial | 2 | 2 | yes | EAR99 | LOW LEAKAGE CURRENT, FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | MATTE TIN | WIRE | 2 | Single | 1 | Rectifier Diodes | 5A | 1.35V | 200A | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 200V | 200A | 200V | 200 ns | 200 ns | Standard | 200V | 5A | 1 | 5A | 28pF @ 4V 1MHz | 10μA @ 200V | 1.35V @ 5A | 125°C Max | ||||||||||||||||||
| 1N5399GPHE3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-1n5399gpe373-datasheets-2623.pdf | DO-204AC, DO-15, Axial | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT | Tin | unknown | 8541.10.00.80 | e3 | WIRE | NOT SPECIFIED | 1N5399 | 2 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | O-PALF-W2 | 1.5A | 50A | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 1kV | 50A | 1kV | 2 μs | 2 μs | Standard | 1kV | 1.5A | 1 | 15pF @ 4V 1MHz | 1000V | 5μA @ 1000V | 1.4V @ 1.5A | -65°C~175°C | |||||||||||||||
| 1N5061GPHE3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-1n5059gpe354-datasheets-1939.pdf | DO-204AC, DO-15, Axial | 2 | yes | EAR99 | HIGH RELIABILITY, LOW LEAKAGE CURRENT | Tin | unknown | 8541.10.00.80 | e3 | WIRE | NOT SPECIFIED | 1N5061 | 2 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | O-PALF-W2 | 50A | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 600V | 50A | 600V | 2 μs | 2 μs | Standard | 600V | 1A | 1A | 15pF @ 4V 1MHz | 5μA @ 600V | 1.2V @ 1A | -65°C~175°C | |||||||||||||||||
| AGP15-600HE3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-agp15400e354-datasheets-5324.pdf | DO-204AC, DO-15, Axial | AGP15 | Single | DO-204AC (DO-15) | 50A | Standard Recovery >500ns, > 200mA (Io) | 5μA | 600V | 2μs | 2 μs | Avalanche | 600V | 1.5A | 600V | 5μA @ 600V | 1.1V @ 1.5A | 1.5A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||
| BYM12-150HE3/97 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-bym12200e396-datasheets-0998.pdf | DO-213AB, MELF (Glass) | 2 | 19 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | Tin | No | 8541.10.00.80 | e3 | END | WRAP AROUND | 250 | BYM12-150 | 2 | Single | 40 | 1 | Rectifier Diodes | 1A | 30A | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 150V | 30A | 150V | 50 ns | 50 ns | Standard | 150V | 1A | 1A | 20pF @ 4V 1MHz | 5μA @ 150V | 1V @ 1A | -65°C~175°C | |||||||||||||||
| BYM11-800HE3/97 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-rgl41je396-datasheets-0192.pdf | DO-213AB, MELF (Glass) | 2 | 19 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | Tin | unknown | 8541.10.00.80 | e3 | END | WRAP AROUND | NOT SPECIFIED | BYM11-800 | 2 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | 1A | 30A | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 800V | 30A | 800V | 500 ns | 500 ns | Standard | 800V | 1A | 1A | 15pF @ 4V 1MHz | 5μA @ 800V | 1.3V @ 1A | -65°C~175°C | ||||||||||||||
| BY520-16EHE3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-by52016ee354-datasheets-3901.pdf | DO-204AL, DO-41, Axial | 2 | 2 | EAR99 | HIGH RELIABILITY | Tin | unknown | 8541.10.00.70 | e3 | AEC-Q101 | WIRE | 2 | Single | 1 | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 1.6kV | 20A | Standard | 1.6kV | 500mA | 0.5A | 0.5μs | 1600V | -65°C~175°C | ||||||||||||||||||||||||||||
| BYD33MGP-E3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-byd33kgphe354-datasheets-0997.pdf | DO-204AL, DO-41, Axial | No | BYD33M | Single | DO-204AL (DO-41) | 30A | Standard Recovery >500ns, > 200mA (Io) | 5μA | 1kV | 30A | 1kV | 300ns | 300 ns | Standard | 1kV | 1A | 15pF @ 4V 1MHz | 1000V | 5μA @ 1000V | 1.3V @ 1A | 1A | -65°C~175°C |
