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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | RoHS Status | Published | Datasheet | Package / Case | Input Current | Number of Terminations | Factory Lead Time | REACH SVHC | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Output Voltage | Forward Current | Forward Voltage | Isolation Voltage | Max Surge Current | Max Reverse Leakage Current | Configuration | Case Connection | Application | Speed | Diode Element Material | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Number of Phases | Output Current-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 1N4002GPHE3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-1n4007gpe354-datasheets-2720.pdf | DO-204AL, DO-41, Axial | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | Tin | unknown | 8541.10.00.80 | e3 | WIRE | NOT SPECIFIED | 1N4002 | 2 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | O-PALF-W2 | 30A | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 100V | 30A | 100V | 2 μs | 2 μs | Standard | 100V | 1A | 1A | 8pF @ 4V 1MHz | 5μA @ 100V | 1.1V @ 1A | -65°C~175°C | ||||||||||||||||||||||||
| 1N3611GPHE3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-1n3611gpe354-datasheets-6036.pdf | DO-204AL, DO-41, Axial | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | Tin | unknown | 8541.10.00.80 | e3 | AEC-Q101 | WIRE | NOT SPECIFIED | 1N3611 | 2 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | 1V | 30A | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1μA | 200V | 30A | 200V | 2 μs | 2 μs | Standard | 200V | 1A | 1A | 8pF @ 4V 1MHz | 1μA @ 200V | 1V @ 1A | -65°C~175°C | ||||||||||||||||||||||
| SRP300C-E3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-srp300j1-datasheets-3705.pdf | DO-201AD, Axial | DO-201AD | Fast Recovery =< 500ns, > 200mA (Io) | 100 ns | Standard | 150V | 3A | 28pF @ 4V 1MHz | 150V | 10μA @ 150V | 1.3V @ 3A | 3A | -50°C~125°C | |||||||||||||||||||||||||||||||||||||||||||||||||||
| RGP10MHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Surface Mount, Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-rgp10je354-datasheets-8986.pdf | DO-204AL, DO-41, Axial | 2 | Unknown | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | RGP10M | 2 | Single | 1 | Rectifier Diodes | 500mA | 1.3V | 30A | 5μA | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10A | 5μA | 1kV | 30A | 500 ns | 500 ns | Standard | 1kV | 1A | 1A | 15pF @ 4V 1MHz | 1000V | 5μA @ 1000V | 1.3V @ 1A | -65°C~175°C | ||||||||||||||||||||||
| SUF30J-E3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-suf30je373-datasheets-5201.pdf | P600, Axial | SUF30 | Single | P600 | 80A | Fast Recovery =< 500ns, > 200mA (Io) | 10μA | 600V | 35 ns | 35 ns | Standard | 600V | 3A | 600V | 10μA @ 600V | 2V @ 3A | 3A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||
| SB360S-E3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-sb360se373-datasheets-5202.pdf | DO-204AC, DO-15, Axial | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | SB360 | 2 | Single | 1 | Rectifier Diodes | 3A | 700mV | ISOLATED | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100A | 500μA | 60V | 100A | Schottky | 60V | 3A | 1 | 3A | 500μA @ 60V | 700mV @ 3A | -65°C~150°C | ||||||||||||||||||||||||||||
| TVR06JHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | DO-204AL, DO-41, Axial | TVR06 | DO-204AL (DO-41) | Standard Recovery >500ns, > 200mA (Io) | 300 ns | Standard | 600V | 600mA | 15pF @ 4V 1MHz | 600V | 10μA @ 600V | 1.4V @ 600mA | 600mA | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||
| RGP5020HE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | Axial | RGP5020 | Axial | Standard Recovery >500ns, > 200mA (Io) | Standard | 200V | 500mA | 200V | 500mA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GP10DHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gp10we354-datasheets-8508.pdf | DO-204AL, DO-41, Axial | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | GP10D | 2 | Single | 1 | Rectifier Diodes | 1A | 30A | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 200V | 30A | 200V | 3 μs | 3 μs | Standard | 200V | 1A | 1A | 8pF @ 4V 1MHz | 5μA @ 200V | 1.1V @ 1A | -65°C~175°C | ||||||||||||||||||||||||||
| SB040-E3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 125°C | -65°C | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-sb04054-datasheets-7422.pdf | MPG06, Axial | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | SB040 | 2 | Single | 1 | Rectifier Diodes | 600mA | 20A | 500μA | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500μA | 40V | 20A | Schottky | 40V | 600mA | 0.6A | 500μA @ 40V | 550mV @ 600mA | -65°C~125°C | ||||||||||||||||||||||||||||||
| GP10AHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gp10we354-datasheets-8508.pdf | DO-204AL, DO-41, Axial | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | GP10A | 2 | Single | 1 | Rectifier Diodes | O-PALF-W2 | 1A | 30A | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 50V | 30A | 50V | 3 μs | 3 μs | Standard | 50V | 1A | 1A | 8pF @ 4V 1MHz | 5μA @ 50V | 1.1V @ 1A | -65°C~175°C | ||||||||||||||||||||||||||
| RMPG06JHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-rmpg06jhe3a54-datasheets-1547.pdf | MPG06, Axial | 2 | No | RMPG06J | Single | MPG06 | 1A | 40A | Fast Recovery =< 500ns, > 200mA (Io) | 5μA | 600V | 40A | 600V | 200 ns | 200 ns | Standard | 600V | 1A | 6.6pF @ 4V 1MHz | 600V | 5μA @ 600V | 1.3V @ 1A | 1A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||
| TVR06J-E3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | DO-204AL, DO-41, Axial | 2 | 12 Weeks | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | unknown | 8541.10.00.80 | WIRE | TVR06 | 175°C | 1 | O-PALF-W2 | SINGLE | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 300 ns | Standard | 600V | 600mA | 0.6A | 15pF @ 4V 1MHz | 600V | 10μA @ 600V | 1.4V @ 600mA | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||
| RGP20D-E3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-rgp20be373-datasheets-5121.pdf | DO-201AA, DO-27, Axial | 2 | 20 | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | unknown | 8541.10.00.80 | e3 | MATTE TIN | WIRE | NOT APPLICABLE | RGP20D | 2 | Single | NOT APPLICABLE | 1 | Not Qualified | O-PALF-W2 | 80A | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 200V | 150 ns | 150 ns | Standard | 200V | 2A | 1 | 2A | 5μA @ 200V | 1.3V @ 2A | -65°C~175°C | |||||||||||||||||||||||||||
| EGP20AHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-egp20de373-datasheets-1541.pdf | DO-204AC, DO-15, Axial | yes | No | EGP20A | 2 | Single | 75A | Fast Recovery =< 500ns, > 200mA (Io) | 5μA | 50V | 75A | 50V | 50 ns | 50 ns | Standard | 50V | 2A | 70pF @ 4V 1MHz | 5μA @ 50V | 950mV @ 2A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||
| EGP10FHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-egp10ce354-datasheets-0551.pdf | DO-204AL, DO-41, Axial | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | EGP10F | 2 | Single | 1 | Rectifier Diodes | 30A | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 300V | 30A | 300V | 50 ns | 50 ns | Standard | 300V | 1A | 1A | 15pF @ 4V 1MHz | 5μA @ 300V | 1.25V @ 1A | -65°C~150°C | |||||||||||||||||||||||||||
| GP20G-E3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gp20ge373-datasheets-5168.pdf | DO-201AA, DO-27, Axial | 20 | GP20G | Single | GP20 | 65A | Standard Recovery >500ns, > 200mA (Io) | 5μA | 400V | 5 μs | 5 μs | Standard | 400V | 2A | 400V | 5μA @ 400V | 1.1V @ 2A | 2A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||
| RGP02-18EHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-rgp0220ee354-datasheets-6870.pdf | DO-204AL, DO-41, Axial | 2 | 2 | yes | EAR99 | HIGH RELIABILITY | No | 8541.10.00.70 | e3 | Matte Tin (Sn) | WIRE | RGP02-18 | 2 | Single | 1 | Rectifier Diodes | 20A | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 1.8kV | 20A | 1.8kV | 300 ns | 300 ns | Standard | 1.8kV | 500mA | 0.5A | 1800V | 5μA @ 1800V | 1.8V @ 100mA | -65°C~175°C | |||||||||||||||||||||||||||
| GP10YHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2016 | /files/vishaysemiconductordiodesdivision-gp10we354-datasheets-8508.pdf | DO-204AL, DO-41, Axial | 2 | yes | No | GP10Y | 2 | Single | 1A | 1.3V | 25A | Standard Recovery >500ns, > 200mA (Io) | 5μA | 1.6kV | 25A | 1.6kV | 3 μs | 3 μs | Standard | 1.6kV | 1A | 5pF @ 4V 1MHz | 1600V | 5μA @ 1600V | 1.3V @ 1A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||
| BYW27-200GPHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-byw27200gpe354-datasheets-4622.pdf | DO-204AL, DO-41, Axial | 2 | No | BYW27-200 | Single | DO-204AL (DO-41) | 1A | Standard Recovery >500ns, > 200mA (Io) | 200nA | 200V | 30A | 3 μs | Standard | 200V | 1A | 8pF @ 4V 1MHz | 200V | 200nA @ 200V | 1V @ 1A | 1A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||
| RGP20JHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-rgp20be373-datasheets-5121.pdf | DO-201AA, DO-27, Axial | 2 | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT | unknown | 8541.10.00.80 | e3 | MATTE TIN | WIRE | NOT APPLICABLE | RGP20J | 2 | Single | NOT APPLICABLE | 1 | Not Qualified | O-PALF-W2 | 80A | 5μA | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 250 ns | 250 ns | Standard | 600V | 2A | 1 | 2A | 5μA @ 600V | 1.3V @ 2A | -65°C~175°C | |||||||||||||||||||||||||||||
| GPP60GHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gpp60be373-datasheets-5107.pdf | P600, Axial | 2 | 14 Weeks | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | GPP60G | 2 | Single | 1 | Rectifier Diodes | O-PALF-W2 | 500A | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 400V | 500A | 400V | 5.5 μs | 5.5 μs | Standard | 400V | 6A | 1 | 6A | 5μA @ 400V | 1.1V @ 6A | -55°C~175°C | ||||||||||||||||||||||||||
| 1N4003GPHE3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-1n4007gpe354-datasheets-2720.pdf | DO-204AL, DO-41, Axial | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | Tin | unknown | 8541.10.00.80 | e3 | WIRE | NOT SPECIFIED | 1N4003 | 2 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | O-PALF-W2 | 30A | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 200V | 30A | 200V | 2 μs | 2 μs | Standard | 200V | 1A | 1A | 8pF @ 4V 1MHz | 5μA @ 200V | 1.1V @ 1A | -65°C~175°C | ||||||||||||||||||||||||
| TVR10G-E3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | DO-204AL, DO-41, Axial | 2 | 12 Weeks | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | unknown | 8541.10.00.80 | WIRE | TVR10 | 175°C | 1 | O-PALF-W2 | SINGLE | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 300 ns | Standard | 400V | 1A | 1A | 400V | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||
| 1N3957GPHE3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-1n3611gpe354-datasheets-6036.pdf | DO-204AL, DO-41, Axial | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | Tin | unknown | 8541.10.00.80 | e3 | AEC-Q101 | WIRE | NOT SPECIFIED | 1N3957 | 2 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | 30A | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1μA | 1kV | 30A | 1kV | 2 μs | 2 μs | Standard | 1kV | 1A | 1A | 8pF @ 4V 1MHz | 1000V | 1μA @ 1000V | 1V @ 1A | -65°C~175°C | |||||||||||||||||||||||
| SUF15G-E3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-suf15ge373-datasheets-5183.pdf | DO-201AA, DO-27, Axial | 20 | SUF15 | Single | GP20 | 50A | Fast Recovery =< 500ns, > 200mA (Io) | 10μA | 400V | 35 ns | 35 ns | Standard | 400V | 1.5A | 400V | 10μA @ 400V | 1.8V @ 1.5A | 1.5A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||
| GP15MHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gp15ge354-datasheets-2613.pdf | DO-204AC, DO-15, Axial | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | GP15M | 2 | Single | 1 | Rectifier Diodes | O-PALF-W2 | 50A | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 1kV | 50A | 1kV | 3.5 μs | 3.5 μs | Standard | 1kV | 1.5A | 1 | 1000V | 5μA @ 1000V | 1.1V @ 1.5A | -65°C~175°C | ||||||||||||||||||||||||||
| SUF15J-E3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-suf15ge373-datasheets-5183.pdf | DO-201AA, DO-27, Axial | 50mA | Unknown | 20 | SUF15 | 1 | Single | GP20 | 32V | 60mA | 1.8V | 5kV | 50A | Fast Recovery =< 500ns, > 200mA (Io) | 10μA | 50A | 600V | 35 ns | 35 ns | Standard | 600V | 1.5A | 600V | 10μA @ 600V | 1.8V @ 1.5A | 1.5A | -55°C~150°C | |||||||||||||||||||||||||||||||||||
| RGP20G-E3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-rgp20be373-datasheets-5121.pdf | DO-201AA, DO-27, Axial | 2 | 20 | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | unknown | 8541.10.00.80 | e3 | MATTE TIN | WIRE | NOT APPLICABLE | RGP20G | 2 | Single | NOT APPLICABLE | 1 | Not Qualified | O-PALF-W2 | 80A | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 400V | 150 ns | 150 ns | Standard | 400V | 2A | 1 | 2A | 5μA @ 400V | 1.3V @ 2A | -65°C~175°C | |||||||||||||||||||||||||||
| GP15KHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gp15ge354-datasheets-2613.pdf | DO-204AC, DO-15, Axial | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | GP15K | 2 | Single | 1 | Rectifier Diodes | O-PALF-W2 | 50A | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 800V | 50A | 800V | 3.5 μs | 3.5 μs | Standard | 800V | 1.5A | 1 | 5μA @ 800V | 1.1V @ 1.5A | -65°C~175°C |
