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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Package / Case | Number of Terminations | Factory Lead Time | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Operating Temperature (Min) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Configuration | Case Connection | Application | Speed | Diode Element Material | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MUR140-E3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-mur16054-datasheets-7215.pdf | DO-204AC, DO-15, Axial | 2 | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | MUR140 | 2 | Single | 1 | Rectifier Diodes | O-PALF-W2 | 35A | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 400V | 35A | 400V | 75 ns | 75 ns | Standard | 400V | 1A | 1A | 5μA @ 400V | 1.25V @ 1A | -65°C~175°C | |||||||||||||||||||||||||
| GPP15M-E3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | SCHOTTKY | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gpp15me373-datasheets-5083.pdf | DO-204AC, DO-15, Axial | 2 | EAR99 | FREE WHEELING DIODE | unknown | 8541.10.00.80 | e3 | MATTE TIN | WIRE | NOT APPLICABLE | 2 | NOT APPLICABLE | 1 | Not Qualified | O-PALF-W2 | SINGLE | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | Standard | 1kV | 1.5A | 50A | 1 | 8pF @ 4V 1MHz | 1000V | 5μA @ 1000V | 1.1V @ 1.5A | -55°C~150°C | |||||||||||||||||||||||||||||
| GPP15D-E3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 150°C | -55°C | SCHOTTKY | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gpp15me373-datasheets-5083.pdf | DO-204AC, DO-15, Axial | 2 | 2 | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | MATTE TIN | WIRE | 2 | Single | 1 | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 200V | 50A | Standard | 200V | 1.5A | 1 | 8pF @ 4V 1MHz | 5μA @ 200V | 1.1V @ 1.5A | -55°C~150°C | ||||||||||||||||||||||||||||||
| MPG06BHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-mpg06ge354-datasheets-8621.pdf | MPG06, Axial | No | MPG06 | Single | MPG06 | 1A | 40A | Standard Recovery >500ns, > 200mA (Io) | 5μA | 100V | 40A | 100V | 600 ns | 600 ns | Standard | 100V | 1A | 10pF @ 4V 1MHz | 100V | 5μA @ 100V | 1.1V @ 1A | 1A | -55°C~150°C | |||||||||||||||||||||||||||||||||||
| GP30GHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gp30je354-datasheets-5190.pdf | DO-201AD, Axial | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | GP30G | 2 | Single | 1 | Rectifier Diodes | 125A | ISOLATED | HIGH VOLTAGE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 400V | 125A | 400V | 5 μs | 5 μs | Standard | 400V | 3A | 1 | 3A | 5μA @ 400V | 1.1V @ 3A | -65°C~175°C | ||||||||||||||||||||||
| MPG06MHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-mpg06ge354-datasheets-8621.pdf | MPG06, Axial | 2 | No | MPG06 | Single | MPG06 | 1A | 40A | Standard Recovery >500ns, > 200mA (Io) | 5μA | 1kV | 40A | 1kV | 600 ns | 600 ns | Standard | 1kV | 1A | 10pF @ 4V 1MHz | 1000V | 5μA @ 1000V | 1.1V @ 1A | 1A | -55°C~150°C | ||||||||||||||||||||||||||||||||||
| RGP10GHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-rgp10je354-datasheets-8986.pdf | DO-204AL, DO-41, Axial | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | RGP10G | 2 | Single | 1 | Rectifier Diodes | 30A | 5μA | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 400V | 30A | 150 ns | 150 ns | Standard | 400V | 1A | 1A | 15pF @ 4V 1MHz | 5μA @ 400V | 1.3V @ 1A | -65°C~175°C | |||||||||||||||||||||||
| M100J-E3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 150°C | -50°C | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-m100je373-datasheets-5093.pdf | DO-204AL, DO-41, Axial | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | M100 | 2 | Single | 1 | Rectifier Diodes | 50A | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1μA | 600V | 50A | 600V | 2 μs | 2 μs | Standard | 600V | 1A | 1A | 1μA @ 600V | 1V @ 1A | -50°C~150°C | |||||||||||||||||||||||||
| GP10-4004EHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gp10we354-datasheets-8508.pdf | DO-204AL, DO-41, Axial | GP10-4004 | DO-204AL (DO-41) | Standard Recovery >500ns, > 200mA (Io) | Standard | 400V | 1A | 400V | 1A | |||||||||||||||||||||||||||||||||||||||||||||||||||
| RGP10KEHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-rgp10je354-datasheets-8986.pdf | DO-204AL, DO-41, Axial | 2 | No | RGP10K | Single | DO-204AL (DO-41) | 30A | 5μA | Fast Recovery =< 500ns, > 200mA (Io) | 5μA | 800V | 30A | 500 ns | 500 ns | Standard | 800V | 1A | 15pF @ 4V 1MHz | 800V | 5μA @ 800V | 1.3V @ 1A | 1A | -65°C~175°C | ||||||||||||||||||||||||||||||||||
| EGP50G-E3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-egp50de373-datasheets-4865.pdf | DO-201AA, DO-27, Axial | 20 | yes | EAR99 | No | 8541.10.00.80 | EGP50G | 2 | Single | 5A | 1.25V | 150A | Fast Recovery =< 500ns, > 200mA (Io) | 5μA | 400V | 150A | 400V | 50 ns | 50 ns | Standard | 400V | 5A | 75pF @ 4V 1MHz | 5μA @ 400V | 1.25V @ 5A | -65°C~150°C | |||||||||||||||||||||||||||||||
| GP10GEHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gp10we354-datasheets-8508.pdf | DO-204AL, DO-41, Axial | 2 | No | GP10G | Single | DO-204AL (DO-41) | 1A | 30A | Standard Recovery >500ns, > 200mA (Io) | 5μA | 400V | 30A | 400V | 3 μs | 3 μs | Standard | 400V | 1A | 8pF @ 4V 1MHz | 400V | 5μA @ 400V | 1.1V @ 1A | 1A | -65°C~175°C | |||||||||||||||||||||||||||||||||
| GP10MEHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gp10we354-datasheets-8508.pdf | DO-204AL, DO-41, Axial | 2 | No | GP10M | Single | DO-204AL (DO-41) | 1A | 30A | Standard Recovery >500ns, > 200mA (Io) | 5μA | 1kV | 30A | 1kV | 3 μs | 3 μs | Standard | 1kV | 1A | 7pF @ 4V 1MHz | 1000V | 5μA @ 1000V | 1.2V @ 1A | 1A | -65°C~175°C | |||||||||||||||||||||||||||||||||
| GP10BHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gp10we354-datasheets-8508.pdf | DO-204AL, DO-41, Axial | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | GP10B | 2 | Single | 1 | Rectifier Diodes | O-PALF-W2 | 1A | 30A | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 100V | 30A | 100V | 3 μs | 3 μs | Standard | 100V | 1A | 1A | 8pF @ 4V 1MHz | 5μA @ 100V | 1.1V @ 1A | -65°C~175°C | ||||||||||||||||||||||
| GI250-2HE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gi2504e354-datasheets-4686.pdf | DO-204AL, DO-41, Axial | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.70 | e3 | Matte Tin (Sn) | WIRE | GI250-2 | 2 | Single | 1 | Rectifier Diodes | 15A | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 2kV | 15A | 2kV | 2 μs | 2 μs | Standard | 2kV | 250mA | 3pF @ 4V 1MHz | 2000V | 5μA @ 2000V | 3.5V @ 250mA | -65°C~175°C | |||||||||||||||||||||||
| RGP02-17EHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-rgp0220ee354-datasheets-6870.pdf | DO-204AL, DO-41, Axial | 2 | 2 | yes | EAR99 | HIGH RELIABILITY | No | 8541.10.00.70 | e3 | Matte Tin (Sn) | WIRE | RGP02-17 | 2 | Single | 1 | Rectifier Diodes | 20A | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 1.7kV | 20A | 1.7kV | 300 ns | 300 ns | Standard | 1.7kV | 500mA | 0.5A | 1700V | 5μA @ 1700V | 1.8V @ 100mA | -65°C~175°C | |||||||||||||||||||||||
| BY206GPHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | DO-204AL, DO-41, Axial | BY206GP | DO-204AL (DO-41) | Standard Recovery >500ns, > 200mA (Io) | 1 μs | Standard | 300V | 400mA | 300V | 2μA @ 300V | 1.5V @ 2A | 400mA | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||
| EGP30G-E3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2012 | /files/vishaysemiconductordiodesdivision-egp30ae373-datasheets-2431.pdf | DO-201AA, DO-27, Axial | 2 | 51 Weeks | 20 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | EGP30G | 2 | Single | 1 | Rectifier Diodes | O-PALF-W2 | 125A | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 400V | 125A | 400V | 50 ns | 50 ns | Standard | 400V | 3A | 1 | 3A | 5μA @ 400V | 1.25V @ 3A | -65°C~150°C | ||||||||||||||||||||
| GP30JHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gp30je354-datasheets-5190.pdf | DO-201AD, Axial | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | GP30J | 2 | Single | 1 | Rectifier Diodes | 1.1V | 125A | ISOLATED | HIGH VOLTAGE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 600V | 125A | 600V | 5 μs | 5 μs | Standard | 600V | 3A | 1 | 3A | 5μA @ 600V | 1.1V @ 3A | -65°C~175°C | |||||||||||||||||||||
| EGP20DHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-egp20de373-datasheets-1541.pdf | DO-204AC, DO-15, Axial | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | EGP20D | 2 | Single | 1 | Rectifier Diodes | O-PALF-W2 | 75A | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 200V | 75A | 200V | 50 ns | 50 ns | Standard | 200V | 2A | 1 | 2A | 70pF @ 4V 1MHz | 5μA @ 200V | 950mV @ 2A | -65°C~150°C | |||||||||||||||||||||
| BY500-800-E3/73 | Vishay Semiconductor Diodes Division | $0.35 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 125°C | -50°C | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-by500100e373-datasheets-4810.pdf | DO-201AD, Axial | 2 | 2 | yes | EAR99 | LOW LEAKAGE CURRENT, FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | BY500-800 | 2 | Single | 1 | Rectifier Diodes | 5A | 1.35V | 200A | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 800V | 200A | 800V | 200 ns | 200 ns | Standard | 800V | 5A | 1 | 5A | 28pF @ 4V 1MHz | 10μA @ 800V | 1.35V @ 5A | 125°C Max | ||||||||||||||||||||
| GP10YEHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gp10we354-datasheets-8508.pdf | DO-204AL, DO-41, Axial | 2 | No | GP10Y | Single | DO-204AL (DO-41) | 1A | 1.3V | 25A | Standard Recovery >500ns, > 200mA (Io) | 5μA | 1.6kV | 25A | 1.6kV | 3 μs | 3 μs | Standard | 1.6kV | 1A | 5pF @ 4V 1MHz | 1600V | 5μA @ 1600V | 1.3V @ 1A | 1A | -65°C~150°C | ||||||||||||||||||||||||||||||||
| UG12HT-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ug12jte345-datasheets-6932.pdf | TO-220-2 | 2 | 20 Weeks | yes | EAR99 | FREE WHEELING DIODE | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | 260 | 3 | Single | 40 | 1 | Rectifier Diodes | Not Qualified | R-PSFM-T2 | 135A | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 30μA | 500V | TO-220AC | 50 ns | 50 ns | Standard | 500V | 12A | 1 | 30μA @ 500V | 1.75V @ 12A | 150°C Max | |||||||||||||||||||||||
| EGP50FHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-egp50de373-datasheets-4865.pdf | DO-201AA, DO-27, Axial | 2 | 20 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | EGP50F | 2 | Single | 1 | Rectifier Diodes | O-PALF-W2 | 5A | 150A | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 300V | 150A | 300V | 50 ns | 50 ns | Standard | 300V | 5A | 1 | 5A | 75pF @ 4V 1MHz | 5μA @ 300V | 1.25V @ 5A | -65°C~150°C | |||||||||||||||||||
| BYD33JGP-E3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-byd33kgphe354-datasheets-0997.pdf | DO-204AL, DO-41, Axial | No | BYD33J | Single | DO-204AL (DO-41) | 30A | Standard Recovery >500ns, > 200mA (Io) | 5μA | 600V | 30A | 600V | 250ns | 250 ns | Standard | 600V | 1A | 15pF @ 4V 1MHz | 600V | 5μA @ 600V | 1.3V @ 1A | 1A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||
| GP30MHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gp30je354-datasheets-5190.pdf | DO-201AD, Axial | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | GP30M | 2 | Single | 1 | Rectifier Diodes | 1.1V | 125A | ISOLATED | HIGH VOLTAGE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 1kV | 125A | 1kV | 5 μs | 5 μs | Standard | 1kV | 3A | 1 | 3A | 1000V | 5μA @ 1000V | 1.1V @ 3A | -65°C~175°C | ||||||||||||||||||||
| FGP20DHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2016 | /files/vishaysemiconductordiodesdivision-fgp20bhe373-datasheets-4867.pdf | DO-204AC, DO-15, Axial | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | FGP20D | 2 | Single | 1 | Rectifier Diodes | 2A | 950mV | 50A | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 2μA | 200V | 50A | 200V | 35 ns | 35 ns | Standard | 200V | 2A | 1 | 2A | 45pF @ 4V 1MHz | 2μA @ 200V | 950mV @ 2A | -65°C~175°C | |||||||||||||||||||
| GUR460-E3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | 2013 | DO-201AD, Axial | 2 | EAR99 | FREE WHEELING DIODE | unknown | 8541.10.00.80 | WIRE | 2 | 175°C | -65°C | 1 | Not Qualified | O-PALF-W2 | SINGLE | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 60 ns | Standard | 600V | 4A | 150A | 1 | 4A | 600V | 10μA @ 600V | 1.28V @ 4A | |||||||||||||||||||||||||||||||||
| RGP02-15EHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-rgp0220ee354-datasheets-6870.pdf | DO-204AL, DO-41, Axial | 2 | 2 | yes | EAR99 | HIGH RELIABILITY | No | 8541.10.00.70 | e3 | Matte Tin (Sn) | WIRE | RGP02-15 | 2 | Single | 1 | Rectifier Diodes | 20A | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 1.5kV | 20A | 1.5kV | 300 ns | 300 ns | Standard | 1.5kV | 500mA | 0.5A | 1500V | 5μA @ 1500V | 1.8V @ 100mA | -65°C~175°C | |||||||||||||||||||||||
| GP15GHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gp15ge354-datasheets-2613.pdf | DO-204AC, DO-15, Axial | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | GP15G | 2 | Single | 1 | Rectifier Diodes | O-PALF-W2 | 50A | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 400V | 50A | 400V | 3.5 μs | 3.5 μs | Standard | 400V | 1.5A | 1 | 5μA @ 400V | 1.1V @ 1.5A | -65°C~175°C |
