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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | RoHS Status | Published | Datasheet | Package / Case | Number of Terminations | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Configuration | Case Connection | Application | Speed | Diode Element Material | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Number of Phases | Output Current-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| FGP20CHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-fgp20bhe373-datasheets-4867.pdf | DO-204AC, DO-15, Axial | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | FGP20C | 2 | Single | 1 | Rectifier Diodes | O-PALF-W2 | 2A | 50A | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 2μA | 150V | 50A | 150V | 35 ns | 35 ns | Standard | 150V | 2A | 1 | 2A | 45pF @ 4V 1MHz | 2μA @ 150V | 950mV @ 2A | -65°C~175°C | |||||||||||||||
| FGP30C-E3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-fgp30bhe373-datasheets-4899.pdf | DO-204AC, DO-15, Axial | 2 | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | FGP30C | 2 | Single | 1 | Rectifier Diodes | O-PALF-W2 | 3A | 125A | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 150V | 125A | 150V | 35 ns | 35 ns | Standard | 150V | 3A | 1 | 3A | 70pF @ 4V 1MHz | 5μA @ 150V | 950mV @ 3A | -65°C~175°C | |||||||||||||||
| SBLF1040-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 125°C | -40°C | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-sbl1030e345-datasheets-4591.pdf | TO-220-3 Full Pack, Isolated Tab | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | 3 | Single | 1 | Rectifier Diodes | 10A | 250A | 1mA | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1mA | 40V | 250A | Schottky | 40V | 10A | 1 | 1mA @ 40V | 600mV @ 10A | -40°C~125°C | |||||||||||||||||||||||
| FGP20D-E3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2015 | /files/vishaysemiconductordiodesdivision-fgp20bhe373-datasheets-4867.pdf | DO-204AC, DO-15, Axial | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | FGP20D | 2 | Single | 1 | Rectifier Diodes | O-PALF-W2 | 2A | 50A | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 2μA | 200V | 50A | 200V | 35 ns | 35 ns | Standard | 200V | 2A | 1 | 2A | 45pF @ 4V 1MHz | 2μA @ 200V | 950mV @ 2A | -65°C~175°C | |||||||||||||||
| GP10VHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gp10we354-datasheets-8508.pdf | DO-204AL, DO-41, Axial | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | GP10V | 2 | Single | 1 | Rectifier Diodes | 1A | 25A | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 1.4kV | 25A | 1.4kV | 3 μs | 3 μs | Standard | 1.4kV | 1A | 1A | 5pF @ 4V 1MHz | 1400V | 5μA @ 1400V | 1.3V @ 1A | -65°C~150°C | ||||||||||||||||
| BYX10GPHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-byx10gpe354-datasheets-9761.pdf | DO-204AL, DO-41, Axial | Silver, Tin | BYX10 | Single | DO-204AL (DO-41) | 15A | Standard Recovery >500ns, > 200mA (Io) | 1μA | 1.6kV | 15A | 1.6kV | 2 μs | 2 μs | Standard | 1.6kV | 360mA | 1600V | 1μA @ 1600V | 1.6V @ 2A | 360mA | -65°C~175°C | ||||||||||||||||||||||||||||||||
| EGP20CHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-egp20de373-datasheets-1541.pdf | DO-204AC, DO-15, Axial | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | EGP20C | 2 | Single | 1 | Rectifier Diodes | O-PALF-W2 | 75A | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 150V | 75A | 150V | 50 ns | 50 ns | Standard | 150V | 2A | 1 | 2A | 70pF @ 4V 1MHz | 5μA @ 150V | 950mV @ 2A | -65°C~150°C | ||||||||||||||||
| GP02-25HE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gp0240e354-datasheets-3946.pdf | DO-204AL, DO-41, Axial | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.70 | e3 | Matte Tin (Sn) | WIRE | GP02-25 | 2 | Single | 1 | Rectifier Diodes | 15A | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 2.5kV | 15A | 2.5kV | 2 μs | 2 μs | Standard | 2.5kV | 250mA | 2500V | 5μA @ 2500V | 3V @ 1A | -65°C~175°C | |||||||||||||||||||
| GI912-E3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 150°C | -50°C | ROHS3 Compliant | 2013 | DO-201AD, Axial | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | 2 | Single | 1 | Rectifier Diodes | 100A | 10μA | ISOLATED | EFFICIENCY | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 200V | 100A | 750 ns | 750 ns | Standard | 200V | 3A | 1 | 3A | 10μA @ 200V | 1.25V @ 3A | -50°C~150°C | ||||||||||||||||||||
| GI818HE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2017 | DO-204AC, DO-15, Axial | 2 | yes | EAR99 | HIGH RELIABILITY | No | 8541.10.00.80 | e3 | MATTE TIN | WIRE | GI818 | 2 | Single | 1 | Rectifier Diodes | O-PALF-W2 | 30A | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 1kV | 30A | 1kV | 750 ns | 750 ns | Standard | 1kV | 1A | 1A | 1000V | 10μA @ 1000V | 1.2V @ 1A | -65°C~175°C | |||||||||||||||||||
| GP08JHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gp08ge354-datasheets-4610.pdf | DO-204AL, DO-41, Axial | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | GP08J | 2 | Single | 1 | Rectifier Diodes | 25A | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 600V | 25A | 600V | 2 μs | 2 μs | Standard | 600V | 800mA | 0.8A | 5μA @ 600V | 1.3V @ 800mA | -65°C~175°C | |||||||||||||||||||
| FGP50D-E3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-fgp50dhe373-datasheets-4875.pdf | DO-201AA, DO-27, Axial | 2 | 20 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | FGP50D | 2 | Single | 1 | Rectifier Diodes | O-PALF-W2 | 5A | 135A | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 200V | 135A | 200V | 35 ns | 35 ns | Standard | 200V | 5A | 1 | 5A | 100pF @ 4V 1MHz | 5μA @ 200V | 950mV @ 5A | -65°C~175°C | ||||||||||||||
| FGP10BHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-fgp10dhe373-datasheets-4893.pdf | DO-204AL, DO-41, Axial | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | FGP10B | 2 | Single | 1 | Rectifier Diodes | O-PALF-W2 | 30A | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 2μA | 100V | 30A | 100V | 35 ns | 35 ns | Standard | 100V | 1A | 1A | 25pF @ 4V 1MHz | 2μA @ 100V | 950mV @ 1A | -65°C~175°C | ||||||||||||||||||
| GI822-E3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 150°C | -50°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gi820e354-datasheets-2016.pdf | P600, Axial | 2 | yes | EAR99 | FREE WHEELING DIODE | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | NOT APPLICABLE | GI822 | 2 | Single | NOT APPLICABLE | 1 | Rectifier Diodes | Not Qualified | O-PALF-W2 | 300A | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 200V | 300A | 200V | 200 ns | 200 ns | Standard | 200V | 5A | 1 | 5A | 300pF @ 4V 1MHz | 10μA @ 200V | 1.1V @ 5A | -50°C~150°C | ||||||||||||||
| BY299P-E3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 125°C | -50°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-by299pe373-datasheets-4958.pdf | DO-201AD, Axial | 2 | 2 | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | MATTE TIN | WIRE | 2 | Single | 1 | 1.3V | 70A | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 800V | 70A | 800V | 500 ns | 500 ns | Standard | 800V | 2A | 1 | 2A | 28pF @ 4V 1MHz | 10μA @ 800V | 1.3V @ 3A | -50°C~125°C | |||||||||||||||||||
| GI250-4HE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gi2504e354-datasheets-4686.pdf | DO-204AL, DO-41, Axial | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.70 | e3 | Matte Tin (Sn) | WIRE | GI250-4 | 2 | Single | 1 | Rectifier Diodes | O-PALF-W2 | 15A | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 4kV | 15A | 4kV | 2 μs | 2 μs | Standard | 4kV | 250mA | 0.25A | 3pF @ 4V 1MHz | 4000V | 5μA @ 4000V | 3.5V @ 250mA | -65°C~175°C | |||||||||||||||||
| EGP50BHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-egp50de373-datasheets-4865.pdf | DO-201AA, DO-27, Axial | 2 | 20 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | EGP50B | 2 | Single | 1 | Rectifier Diodes | O-PALF-W2 | 5A | 150A | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 100V | 150A | 100V | 50 ns | 50 ns | Standard | 100V | 5A | 1 | 5A | 95pF @ 4V 1MHz | 5μA @ 100V | 950mV @ 5A | -65°C~150°C | ||||||||||||||
| EGP50GHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-egp50de373-datasheets-4865.pdf | DO-201AA, DO-27, Axial | 2 | 20 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | EGP50G | 2 | Single | 1 | Rectifier Diodes | O-PALF-W2 | 5A | 150A | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 400V | 150A | 400V | 50 ns | 50 ns | Standard | 400V | 5A | 1 | 5A | 75pF @ 4V 1MHz | 5μA @ 400V | 1.25V @ 5A | -65°C~150°C | ||||||||||||||
| GP10-4002EHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | DO-204AL, DO-41, Axial | GP10-4002 | DO-204AL (DO-41) | Standard Recovery >500ns, > 200mA (Io) | Standard | 100V | 1A | 100V | 1A | ||||||||||||||||||||||||||||||||||||||||||||||||
| FGP20B-E3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-fgp20bhe373-datasheets-4867.pdf | DO-204AC, DO-15, Axial | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | FGP20B | 2 | Single | 1 | Rectifier Diodes | 2A | 950mV | 50A | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 2μA | 100V | 50A | 100V | 35 ns | 35 ns | Standard | 100V | 2A | 1 | 2A | 45pF @ 4V 1MHz | 2μA @ 100V | 950mV @ 2A | -65°C~175°C | ||||||||||||||
| FGP50C-E3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-fgp50dhe373-datasheets-4875.pdf | DO-201AA, DO-27, Axial | 2 | 20 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | FGP50C | 2 | Single | 1 | Rectifier Diodes | O-PALF-W2 | 5A | 135A | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 150V | 135A | 150V | 35 ns | 35 ns | Standard | 150V | 5A | 1 | 5A | 100pF @ 4V 1MHz | 5μA @ 150V | 950mV @ 5A | -65°C~175°C | ||||||||||||||
| FGP10C-E3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-fgp10dhe373-datasheets-4893.pdf | DO-204AL, DO-41, Axial | 2 | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | FGP10C | 2 | Single | 1 | Rectifier Diodes | O-PALF-W2 | 30A | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 2μA | 150V | 30A | 150V | 35 ns | 35 ns | Standard | 150V | 1A | 1A | 25pF @ 4V 1MHz | 2μA @ 150V | 950mV @ 1A | -65°C~175°C | ||||||||||||||||||
| EGP30DHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-egp30ae373-datasheets-2431.pdf | DO-201AA, DO-27, Axial | 2 | 20 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | EGP30D | 2 | Single | 1 | Rectifier Diodes | O-PALF-W2 | 125A | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 200V | 125A | 200V | 50 ns | 50 ns | Standard | 200V | 3A | 1 | 3A | 5μA @ 200V | 950mV @ 3A | -65°C~150°C | ||||||||||||||||
| FGP30CHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-fgp30bhe373-datasheets-4899.pdf | DO-204AC, DO-15, Axial | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | FGP30C | 2 | Single | 1 | Rectifier Diodes | 3A | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 150V | 125A | 35 ns | Standard | 150V | 3A | 1 | 3A | 70pF @ 4V 1MHz | 5μA @ 150V | 950mV @ 3A | -65°C~175°C | ||||||||||||||||||
| GP08GHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gp08ge354-datasheets-4610.pdf | DO-204AL, DO-41, Axial | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | GP08G | 2 | Single | 1 | Rectifier Diodes | 25A | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 400V | 25A | 400V | 2 μs | 2 μs | Standard | 400V | 800mA | 0.8A | 5μA @ 400V | 1.3V @ 800mA | -65°C~175°C | |||||||||||||||||||
| GP02-40HE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gp0240e354-datasheets-3946.pdf | DO-204AL, DO-41, Axial | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.70 | e3 | Matte Tin (Sn) | WIRE | GP02-40 | 2 | Single | 1 | Rectifier Diodes | 15A | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 4kV | 15A | 4kV | 2 μs | 2 μs | Standard | 4kV | 250mA | 4000V | 5μA @ 4000V | 3V @ 1A | -65°C~175°C | |||||||||||||||||||
| EGP50DHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-egp50de373-datasheets-4865.pdf | DO-201AA, DO-27, Axial | 2 | 20 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | EGP50D | 2 | Single | 1 | Rectifier Diodes | O-PALF-W2 | 5A | 150A | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 200V | 150A | 200V | 50 ns | 50 ns | Standard | 200V | 5A | 1 | 5A | 95pF @ 4V 1MHz | 5μA @ 200V | 950mV @ 5A | -65°C~150°C | ||||||||||||||
| BY127MGP-E3/73 | Vishay Semiconductor Diodes Division | $6.08 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-by127mgphe354-datasheets-2928.pdf | DO-204AC, DO-15, Axial | 2 | EAR99 | FREEWHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT | unknown | 8541.10.00.80 | e3 | MATTE TIN | WIRE | BY127 | 1 | O-PALF-W2 | 50A | SINGLE | ISOLATED | HIGH VOLTAGE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 1.25kV | 2 μs | 2 μs | Standard | 1.25kV | 1.75A | 1 | 1250V | 5μA @ 1250V | 1.5V @ 5A | -65°C~175°C | ||||||||||||||||||||||
| GI858-E3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 150°C | -50°C | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-gi858e373-datasheets-4925.pdf | DO-201AD, Axial | 2 | 2 | yes | EAR99 | LOW LEAKAGE CURRENT, FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | 2 | Single | 1 | Rectifier Diodes | 100A | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 800V | 100A | 800V | 200 ns | 200 ns | Standard | 800V | 3A | 1 | 3A | 28pF @ 4V 1MHz | 10μA @ 800V | 1.25V @ 3A | -50°C~150°C | ||||||||||||||||||
| BYD13JGP-E3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-byd13jgphe354-datasheets-0967.pdf | DO-204AL, DO-41, Axial | No | BYD13J | Single | DO-204AL (DO-41) | 1A | 30A | Standard Recovery >500ns, > 200mA (Io) | 5μA | 600V | 30A | 600V | 3 μs | 3 μs | Standard | 600V | 1A | 8pF @ 4V 1MHz | 600V | 1A | -65°C~175°C |
