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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | Max Current Rating | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Operating Temperature (Min) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Max Dual Supply Voltage | Configuration | Case Connection | Drain to Source Voltage (Vdss) | Application | Cable Length | Number of Conductors | Natural Thermal Resistance | Speed | Diode Element Material | Power Dissipation-Max | Rep Pk Reverse Voltage-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | JEDEC-95 Code | Forward Voltage-Max | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Reverse Recovery Time-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction | Cable Pitch |
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| FR40DR02 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2012 | DO-203AB, DO-5, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 6 months ago) | yes | EAR99 | 8541.10.00.80 | UPPER | SOLDER LUG | 125°C | 1 | O-MUPM-D1 | 40A | 500A | SINGLE | ANODE | 0.8 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 25μA | 200V | 200V | 200 ns | 200 ns | Standard, Reverse Polarity | 200V | 40A | 1 | 25μA @ 100V | 1V @ 40A | -40°C~125°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-85HFLR60S05 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 125°C | -40°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs85hfl60s05-datasheets-4835.pdf | DO-203AB, DO-5, Stud | 20.02mm | 22.9mm | 17.35mm | 1 | 13 Weeks | 2 | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | UPPER | SOLDER LUG | Single | 1 | O-MUPM-D1 | 85A | 1.151kA | 0.25 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1.151kA | 100μA | 600V | 1.151kA | 600V | 500 ns | 500 ns | Standard, Reverse Polarity | 600V | 85A | 1 | 100μA @ 600V | 1.75V @ 266.9A | -40°C~125°C | ||||||||||||||||||||||||||||||||||||||||||||||
| SIDC105D120H8X1SA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -40°C | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/infineontechnologies-sidc105d120h8x1sa1-datasheets-1156.pdf | Die | Lead Free | 1 | no | EAR99 | 8541.10.00.40 | Halogen Free | YES | UPPER | NO LEAD | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | R-XUUC-N1 | 1.2kV | 1.2kV | FAST SOFT RECOVERY HIGH POWER | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1200V | 2.6μA | Standard | 1 | 200A | 1200V | 27μA @ 1200V | 1.41V @ 45A | 200A DC | -40°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| UFR7015 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Stud | Bulk | 175°C | -65°C | Non-RoHS Compliant | 1997 | /files/microsemicorporation-ufr7020-datasheets-0946.pdf | Lead Free | 1 | 8 Weeks | 2 | no | EAR99 | HIGH RELIABILITY | No | 8541.10.00.80 | e0 | TIN LEAD | UPPER | SOLDER LUG | 1 | Single | 1 | Rectifier Diodes | O-MUPM-D1 | 70A | CATHODE | FAST RECOVERY | SILICON | 25μA | 150V | 1kA | 0.975V | 50 ns | RECTIFIER DIODE | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSB5820 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 125°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-dsb3a30-datasheets-9347.pdf | DO-204AL, DO-41, Axial | 2 | 2 | no | EAR99 | METALLURGICALLY BONDED | No | 8541.10.00.80 | e0 | TIN LEAD | WIRE | 2 | Single | 1 | 3A | ISOLATED | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 20V | Schottky | 20V | 3A | 1 | 3A | 100μA @ 20V | 500mV @ 3A | -65°C~125°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| JAN1N6628 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/590 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 150°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jantxv1n6628-datasheets-8347.pdf | E, Axial | 2 | 18 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | METALLURGICALLY BONDED, HIGH RELIABILITY | Lead, Tin | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/590 | WIRE | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Qualified | 1.75A | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 660V | 30 ns | Standard | 660V | 1.75A | 1 | 2μA @ 600V | 1.35V @ 1.2A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||
| S4F | Semtech Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | RoHS Compliant | Axial | 4 | 18 Weeks | unknown | 8541.10.00.80 | UPPER | UNSPECIFIED | 4 | 150°C | 4 | Bridge Rectifier Diodes | Not Qualified | R-XUFM-X4 | BRIDGE, 4 ELEMENTS | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 150 ns | Standard | 400V | 2A | 480A | 1 | 16A | 27pF @ 5V 1MHz | 400V | 500nA @ 400V | 1.95V @ 2A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| USC1106 | Semtech Corporation | $95.43 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | RoHS Compliant | Axial | 2 | 18 Weeks | EAR99 | unknown | 8541.10.00.80 | WIRE | 150°C | 1 | Rectifier Diodes | Not Qualified | O-LALF-W2 | SINGLE | ISOLATED | SUPER FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 50 ns | Standard | 400V | 2.1A | 20A | 1 | 2A | 25pF @ 5V 1MHz | 400V | 10μA @ 400V | 1.25V @ 1A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N6540 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 1 (Unlimited) | Non-RoHS Compliant | 2 | 7 Weeks | no | EAR99 | Lead, Tin | 8541.10.00.80 | e0 | TIN LEAD | AXIAL | WIRE | NOT SPECIFIED | NOT SPECIFIED | Not Qualified | O-LALF-W2 | 1A | ISOLATED | SILICON | 800V | RECTIFIER DIODE | 1A | 0.03μs | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-40HF120M | Vishay Semiconductor Diodes Division | $16.51 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 190°C | -65°C | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs40hf160-datasheets-1856.pdf | DO-203AB, DO-5, Stud | 20.02mm | 22.9mm | 17.35mm | 1 | 13 Weeks | 2 | EAR99 | unknown | 8541.10.00.80 | UPPER | SOLDER LUG | NOT SPECIFIED | Common Cathode | NOT SPECIFIED | 1 | O-MUPM-D1 | 40A | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 595A | 9mA | 1.2kV | Standard | 1.2kV | 40A | 1 | 1200V | 1.3V @ 125A | -65°C~190°C | |||||||||||||||||||||||||||||||||||||||||||||||||
| VS-40HF10M | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs40hf160-datasheets-1856.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | EAR99 | unknown | 8541.10.00.80 | UPPER | SOLDER LUG | NOT SPECIFIED | 190°C | NOT SPECIFIED | 1 | O-MUPM-D1 | SINGLE | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 9000μA | Standard | 100V | 40A | 595A | 1 | 100V | 1.3V @ 125A | -65°C~190°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-71HF160 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs70hf160-datasheets-8110.pdf | DO-203AB, DO-5, Stud | 13 Weeks | Single | DO-203AB | 1.25kA | 0.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | 4.5mA | 1.6kV | Standard | 1.6kV | 70A | 1600V | 4.5mA @ 1600V | 1.46V @ 220A | 70A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTXV1N6641US | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/609 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-jantx1n6640us-datasheets-9012.pdf | SQ-MELF, D | 2 | 12 Weeks | 2 | no | EAR99 | METALLURGICALLY BONDED | Lead, Tin | not_compliant | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/609D | END | WRAP AROUND | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Qualified | 300mA | 1.1V | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 50V | 2.5A | 0.1μA | 5ns | Standard | 0.3A | 100nA @ 50V | 1.1V @ 200mA | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||
| JTX1N5417 | Semtech Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 16 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| USC1105 | Semtech Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | RoHS Compliant | Axial | 2 | 18 Weeks | EAR99 | unknown | 8541.10.00.80 | WIRE | 150°C | 1 | Rectifier Diodes | Not Qualified | O-LALF-W2 | SINGLE | ISOLATED | SUPER FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 50 ns | Standard | 300V | 2.1A | 20A | 1 | 2A | 25pF @ 5V 1MHz | 300V | 10μA @ 300V | 1.25V @ 1A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSB1A50 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 125°C | -55°C | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-jantx1n58191-datasheets-8336.pdf | DO-204AL, DO-41, Axial | 2 | 2 | no | EAR99 | METALLURGICALLY BONDED | No | 8541.10.00.80 | e0 | TIN LEAD | WIRE | Single | 1 | 1A | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100nA | 50V | Schottky | 50V | 1A | 1A | 100μA @ 50V | 600mV @ 1A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| S4M | Semtech Corporation | $17.75 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | RoHS Compliant | Axial | 2 | 18 Weeks | unknown | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | WIRE | 2 | 175°C | 1 | Rectifier Diodes | Not Qualified | O-LALF-W2 | SINGLE | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1μA | 2 μs | Standard | 400V | 2A | 30A | 1 | 2A | 23pF @ 5V 1MHz | 400V | 500nA @ 400V | 1.1V @ 1A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| 3SM4 | Semtech Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | AVALANCHE | RoHS Compliant | Axial | 2 | 18 Weeks | no | EAR99 | unknown | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | WIRE | NOT SPECIFIED | 3SM4 | 2 | 175°C | -65°C | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | O-XALF-W2 | SINGLE | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1μA | 2 μs | Standard | 400V | 5A | 100A | 1 | 3A | 92pF @ 5V 1MHz | 400V | 1μA @ 400V | 1V @ 3A | ||||||||||||||||||||||||||||||||||||||||||||||
| 3SM2 | Semtech Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | AVALANCHE | RoHS Compliant | Axial | 2 | 18 Weeks | 2 | no | EAR99 | unknown | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | WIRE | NOT SPECIFIED | 3SM2 | 2 | 175°C | -65°C | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | SINGLE | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1μA | 2 μs | Standard | 200V | 5A | 100A | 1 | 3A | 92pF @ 5V 1MHz | 200V | 1μA @ 200V | 1V @ 3A | ||||||||||||||||||||||||||||||||||||||||||||||
| JTX1N5416 | Semtech Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 16 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JTX1N5415 | Semtech Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 16 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N5830R | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -55°C | RoHS Compliant | 2013 | DO-203AA, DO-4, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | EAR99 | 8541.10.00.80 | UPPER | SOLDER LUG | 1N5830R | 1 | O-MUPM-D1 | 25A | 400A | 1μA | SINGLE | ANODE | POWER | 1.8 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1A | 25V | Schottky, Reverse Polarity | 25V | 25A | 1 | 2mA @ 20V | 580mV @ 25A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-86HF100 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 180°C | -65°C | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs86hf80-datasheets-9123.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | EAR99 | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 1.8kA | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 9mA | 1kV | Standard | 1kV | 85A | 1800A | 1 | 1000V | 9mA @ 1000V | 1.2V @ 267A | -65°C~180°C | |||||||||||||||||||||||||||||||||||||||||||||||||||
| USC1104 | Semtech Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | RoHS Compliant | Axial | 2 | 18 Weeks | EAR99 | unknown | 8541.10.00.80 | WIRE | 150°C | 1 | Rectifier Diodes | Not Qualified | O-LALF-W2 | SINGLE | ISOLATED | SUPER FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 50 ns | Standard | 200V | 2.1A | 20A | 1 | 2A | 25pF @ 5V 1MHz | 200V | 10μA @ 200V | 1.25V @ 1A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FFSH40120A | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | AVALANCHE | RoHS Compliant | /files/onsemiconductor-ffsh40120a-datasheets-1137.pdf | TO-247-2 | 2 | 10 Weeks | ACTIVE (Last Updated: 20 hours ago) | yes | HIGH RELIABILITY, PD-CASE | e3 | Tin (Sn) | NO | SINGLE | 175°C | 1 | R-PSFM-T2 | SINGLE | EFFICIENCY | No Recovery Time > 500mA (Io) | 682W | 1200V | 200μA | TO-247AB | 1.75V | 0ns | Silicon Carbide Schottky | 1550A | 1 | 61A | 2250pF @ 1V 100kHz | 1200V | 200μA @ 1200V | 61A DC | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| S6F | Semtech Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | RoHS Compliant | Axial | 2 | 18 Weeks | no | EAR99 | unknown | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | WIRE | NOT SPECIFIED | 2 | 175°C | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | O-LALF-W2 | SINGLE | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 0.5μA | 250 ns | Standard | 600V | 2A | 25A | 1 | 2A | 27pF @ 5V 1MHz | 600V | 500nA @ 600V | 1.2V @ 1A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N5811US | Semtech Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Bulk | 175°C | -65°C | RoHS Compliant | SQ-MELF | 16 Weeks | 2 | No | 1N5811 | Single | 6A | 875mV | Fast Recovery =< 500ns, > 200mA (Io) | 5μA | 150V | 125A | 30 ns | Standard | 60pF @ 5V 1MHz | 150V | 5μA @ 150V | 875mV @ 4A | 6A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SICR40650WTTB | SMC Diode Solutions |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Not Applicable | ROHS3 Compliant | TO-247-3 | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 650pF @ 0V 1MHz | 650V | 300μA @ 650V | 2V @ 20A | 20A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MBR3545R | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -55°C | RoHS Compliant | 2013 | DO-203AA, DO-4, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | EAR99 | 8541.10.00.80 | 1.3A | UPPER | SOLDER LUG | 1 | O-MUPM-D1 | 35A | 600A | 1μA | SINGLE | ANODE | POWER | 48.768mm | 16 | 1.5 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1A | 45V | Schottky, Reverse Polarity | 45V | 35A | 1 | 1.5mA @ 20V | 680mV @ 35A | -55°C~150°C | 1mm | |||||||||||||||||||||||||||||||||||||||||||||||||
| 1N6096R | GeneSiC Semiconductor | $17.04 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -55°C | RoHS Compliant | 2013 | DO-203AA, DO-4, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | EAR99 | 8541.10.00.80 | UPPER | SOLDER LUG | 1N6096R | 1 | O-MUPM-D1 | 25A | 800A | 1μA | SINGLE | ANODE | POWER | 1.8 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1A | 40V | Schottky, Reverse Polarity | 40V | 25A | 1 | 2mA @ 20V | 580mV @ 25A | -55°C~150°C |
