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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Operating Temperature (Min) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Forward Current | Forward Voltage | Max Surge Current | Configuration | Case Connection | Application | Natural Thermal Resistance | Speed | Diode Element Material | Rep Pk Reverse Voltage-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Reverse Recovery Time-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
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| 1N3172R | Powerex Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Stud | 1 (Unlimited) | RoHS Compliant | 12 Weeks | unknown | 1N3172 | 200°C | 1 | Rectifier Diodes | SINGLE | 800V | RECTIFIER DIODE | 6250A | 200A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-86HFR120 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs86hf80-datasheets-9123.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | EAR99 | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | 180°C | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 1.8kA | ANODE | GENERAL PURPOSE | 0.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 9mA | 1.2kV | Standard, Reverse Polarity | 1.2kV | 85A | 1800A | 1 | 1200V | 9mA @ 1200V | 1.2V @ 267A | -65°C~180°C | ||||||||||||||||||||||||||||||||||||||
| MUR5020 | GeneSiC Semiconductor | $20.03 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2016 | DO-203AB, DO-5, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 6 months ago) | yes | UPPER | SOLDER LUG | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | O-MUPM-D1 | 50A | 600A | SINGLE | CATHODE | SUPER FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 200V | 75 ns | Standard | 200V | 50A | 1 | 10μA @ 50V | 1V @ 50A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||
| 1N6074US | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 155°C | -65°C | AVALANCHE | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n6074us-datasheets-1204.pdf | SQ-MELF, A | 2 | 7 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | HIGH RELIABILITY | Lead, Tin | 8541.10.00.80 | e0 | TIN LEAD | END | WRAP AROUND | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Not Qualified | 3A | 2.04V | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100V | 35A | 30 ns | Standard | 100V | 3A | 0.85A | 1μA @ 100V | 2.04V @ 9.4A | -65°C~155°C | |||||||||||||||||||||||||||||||||
| VS-40HFR160M | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 160°C | -65°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs40hf160-datasheets-1856.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | 2 | EAR99 | unknown | 8541.10.00.80 | UPPER | SOLDER LUG | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 1.5V | ANODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 595A | 4500μA | Standard, Reverse Polarity | 1.6kV | 40A | 1 | 1600V | 1.5V @ 125A | -65°C~160°C | ||||||||||||||||||||||||||||||||||||||||
| JANTX1N6623US | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/585 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | AVALANCHE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n6622us-datasheets-9253.pdf | SQ-MELF, A | 2 | 20 Weeks | 2 | IN PRODUCTION (Last Updated: 3 weeks ago) | EAR99 | HIGH RELIABILITY | Lead, Tin | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500 | END | WRAP AROUND | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Qualified | 1A | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 880V | 50 ns | Standard | 880V | 1A | 1A | 10pF @ 10V 1MHz | 500nA @ 880V | 1.55V @ 1A | -65°C~150°C | ||||||||||||||||||||||||||||||||
| 1N3645 | Semtech Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | Not Applicable | 175°C | -65°C | Non-RoHS Compliant | Axial | 2 | 12 Weeks | 2 | EAR99 | unknown | 8541.10.00.70 | WIRE | 2 | Single | 1 | Rectifier Diodes | Not Qualified | 5V | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 14A | 2.5μs | Standard | 8pF @ 5V 1MHz | 2000V | 1μA @ 2000V | 5V @ 250mA | 600mA | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||
| DSB5821 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 125°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-dsb3a30-datasheets-9347.pdf | DO-204AL, DO-41, Axial | 2 | 2 | no | EAR99 | METALLURGICALLY BONDED | No | 8541.10.00.80 | e0 | TIN LEAD | WIRE | 2 | Single | 1 | 3A | ISOLATED | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 30V | Schottky | 30V | 3A | 1 | 3A | 100μA @ 30V | 500mV @ 3A | -65°C~125°C | |||||||||||||||||||||||||||||||||||||||
| MUR5005 | GeneSiC Semiconductor | $20.46 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-mur5005-datasheets-2132.pdf | DO-203AB, DO-5, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | UPPER | SOLDER LUG | 175°C | 1 | O-MUPM-D1 | 600A | SINGLE | CATHODE | SUPER FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 50V | 75 ns | Standard | 50V | 50A | 1 | 50V | 10μA @ 50V | 1V @ 50A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||
| VS-86HF120 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 180°C | -65°C | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs86hf80-datasheets-9123.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | EAR99 | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 1.8kA | CATHODE | GENERAL PURPOSE | 0.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 9mA | 1.2kV | Standard | 1.2kV | 85A | 1800A | 1 | 1200V | 9mA @ 1200V | 1.2V @ 267A | -65°C~180°C | |||||||||||||||||||||||||||||||||||||
| JAN1N6621US | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/116 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | AVALANCHE | Non-RoHS Compliant | 1997 | SQ-MELF, A | 2 | 2 | IN PRODUCTION (Last Updated: 2 weeks ago) | no | EAR99 | HIGH RELIABILITY | Lead, Tin | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500 | END | WRAP AROUND | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Qualified | 1.2A | 1.6V | ISOLATED | ULTRA FAST RECOVERY | Small Signal =< 200mA (Io), Any Speed | SILICON | 400V | 440V | 20A | 0.5μA | 20ns | Standard | 1 | 2.8pF @ 1.5V 1MHz | 75V | 500nA @ 75V | 1.2V @ 100mA | 200mA | -65°C~200°C | ||||||||||||||||||||||||||||
| GLPB3460G1K1457XPSA1 | Infineon Technologies | $17.35 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ROHS3 Compliant | 12 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JAN1N6626US | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/590 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | AVALANCHE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n6628us-datasheets-2277.pdf | SQ-MELF, E | 2 | 18 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | METALLURGICALLY BONDED | Lead, Tin | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/590F | END | WRAP AROUND | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Qualified | 1.75A | ISOLATED | ULTRA FAST RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 220V | 30 ns | Standard | 220V | 1.75A | 1 | 4A | 40pF @ 10V 1MHz | 2μA @ 220V | 1.35V @ 1.2A | -65°C~150°C | |||||||||||||||||||||||||||||
| JAN1N6622US | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/585 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | AVALANCHE | Non-RoHS Compliant | 1997 | SQ-MELF, A | 2 | 32 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | HIGH RELIABILITY | Lead, Tin | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500 | END | WRAP AROUND | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Qualified | O-LELF-R2 | 1.2A | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 600V | 660V | 0.5μA | 30ns | Standard | 1 | 10pF @ 10V 1MHz | 500nA @ 660V | 1.4V @ 1.2A | -65°C~150°C | |||||||||||||||||||||||||||||||
| JANTX1N5622US | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/427 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 200°C | -65°C | AVALANCHE | Non-RoHS Compliant | /files/microsemicorporation-1n5618us-datasheets-0738.pdf | SQ-MELF, A | 2 | 12 Weeks | 2 | IN PRODUCTION (Last Updated: 4 weeks ago) | no | EAR99 | HIGH RELIABILITY | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | END | WRAP AROUND | 2 | Single | 1 | Qualified | 1.3V | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 500nA | 100V | 30A | 2 μs | Standard | 1kV | 1A | 1A | 1000V | 500nA @ 1000V | 1.3V @ 3A | -65°C~200°C | |||||||||||||||||||||||||||||||||
| JAN1N6624US | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/585 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | AVALANCHE | Non-RoHS Compliant | 1997 | SQ-MELF, A | 2 | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | HIGH RELIABILITY | Lead, Tin | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500 | END | WRAP AROUND | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Qualified | 1A | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 900V | 990V | 50ns | Standard | 1A | 10pF @ 10V 1MHz | 500nA @ 990V | 1.55V @ 1A | -65°C~150°C | ||||||||||||||||||||||||||||||||||
| VS-40HFR80M | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 190°C | -65°C | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs40hf160-datasheets-1856.pdf | DO-203AB, DO-5, Stud | 20.02mm | 22.9mm | 17.35mm | 1 | 13 Weeks | 2 | EAR99 | unknown | 8541.10.00.80 | UPPER | SOLDER LUG | NOT SPECIFIED | Common Anode | NOT SPECIFIED | 1 | O-MUPM-D1 | 40A | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 595A | 9mA | 800V | Standard, Reverse Polarity | 800V | 40A | 1 | 1.3V @ 125A | -65°C~190°C | ||||||||||||||||||||||||||||||||||||||
| VS-40HF100M | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs40hf160-datasheets-1856.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | EAR99 | unknown | 8541.10.00.80 | UPPER | SOLDER LUG | NOT SPECIFIED | 190°C | NOT SPECIFIED | 1 | O-MUPM-D1 | SINGLE | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 9000μA | Standard | 1kV | 40A | 595A | 1 | 1000V | 1.3V @ 125A | -65°C~190°C | |||||||||||||||||||||||||||||||||||||||||||
| 1N6549 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 1 (Unlimited) | Non-RoHS Compliant | 1997 | 2 | 17 Weeks | 2 | no | EAR99 | Lead, Tin | 8541.10.00.80 | e0 | TIN LEAD | AXIAL | WIRE | NOT SPECIFIED | NOT SPECIFIED | Not Qualified | 3A | ISOLATED | ULTRA FAST RECOVERY | SILICON | 1kV | RECTIFIER DIODE | 1 | 3A | 0.1μs | ||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-40HFR100M | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs40hf160-datasheets-1856.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | EAR99 | unknown | 8541.10.00.80 | UPPER | SOLDER LUG | NOT SPECIFIED | 190°C | NOT SPECIFIED | 1 | O-MUPM-D1 | SINGLE | ANODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 9000μA | Standard, Reverse Polarity | 1kV | 40A | 595A | 1 | 1000V | 1.3V @ 125A | -65°C~190°C | |||||||||||||||||||||||||||||||||||||||||||
| FR40BR02 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | DO-203AB, DO-5, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 6 months ago) | yes | EAR99 | 8541.10.00.80 | UPPER | SOLDER LUG | 125°C | 1 | O-MUPM-D1 | 40A | 500A | SINGLE | ANODE | 0.8 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 25μA | 100V | 100V | 200 ns | 200 ns | Standard, Reverse Polarity | 100V | 40A | 1 | 25μA @ 100V | 1V @ 40A | -40°C~125°C | |||||||||||||||||||||||||||||||||||||||||
| 3SM0 | Semtech Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | AVALANCHE | RoHS Compliant | Axial | 2 | 18 Weeks | EAR99 | unknown | 8541.10.00.80 | WIRE | 3SM0 | 2 | 175°C | -65°C | 1 | Rectifier Diodes | Not Qualified | O-XALF-W2 | SINGLE | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1μA | 2 μs | Standard | 1kV | 5A | 100A | 1 | 3A | 92pF @ 5V 1MHz | 1000V | 1μA @ 2000V | 1V @ 3A | ||||||||||||||||||||||||||||||||||||||
| VS-40HF40M | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs40hf160-datasheets-1856.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | EAR99 | unknown | 8541.10.00.80 | UPPER | SOLDER LUG | NOT SPECIFIED | 190°C | NOT SPECIFIED | 1 | O-MUPM-D1 | SINGLE | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 9000μA | Standard | 400V | 40A | 595A | 1 | 400V | 1.3V @ 125A | -65°C~190°C | |||||||||||||||||||||||||||||||||||||||||||
| 1N6539 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 1 (Unlimited) | Non-RoHS Compliant | 1997 | 2 | 7 Weeks | 2 | no | EAR99 | Lead, Tin | unknown | 8541.10.00.80 | e0 | TIN LEAD | AXIAL | WIRE | NOT SPECIFIED | NOT SPECIFIED | Not Qualified | 1A | ISOLATED | SILICON | 700V | RECTIFIER DIODE | 1A | 0.03μs | |||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N5551 | Semtech Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | Not Applicable | AVALANCHE | Non-RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/semtech-1n5551-datasheets-2123.pdf | Axial | Contains Lead | 2 | 12 Weeks | 2 | EAR99 | unknown | 8541.10.00.80 | WIRE | NOT SPECIFIED | 1N5551 | 2 | 175°C | -65°C | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | 5A | SINGLE | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 400V | 1μA | 2 μs | Standard | 1 | 3A | 92pF @ 5V 1MHz | 400V | 1μA @ 400V | 1V @ 3A | |||||||||||||||||||||||||||||||||||
| VS-40HFR60M | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs40hf160-datasheets-1856.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | EAR99 | unknown | 8541.10.00.80 | UPPER | SOLDER LUG | NOT SPECIFIED | 190°C | NOT SPECIFIED | 1 | O-MUPM-D1 | SINGLE | ANODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 9000μA | Standard, Reverse Polarity | 600V | 40A | 595A | 1 | 600V | 1.3V @ 125A | -65°C~190°C | |||||||||||||||||||||||||||||||||||||||||||
| DSB5820 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 125°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-dsb3a30-datasheets-9347.pdf | DO-204AL, DO-41, Axial | 2 | 2 | no | EAR99 | METALLURGICALLY BONDED | No | 8541.10.00.80 | e0 | TIN LEAD | WIRE | 2 | Single | 1 | 3A | ISOLATED | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 20V | Schottky | 20V | 3A | 1 | 3A | 100μA @ 20V | 500mV @ 3A | -65°C~125°C | |||||||||||||||||||||||||||||||||||||||
| JAN1N6628 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/590 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 150°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jantxv1n6628-datasheets-8347.pdf | E, Axial | 2 | 18 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | METALLURGICALLY BONDED, HIGH RELIABILITY | Lead, Tin | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/590 | WIRE | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Qualified | 1.75A | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 660V | 30 ns | Standard | 660V | 1.75A | 1 | 2μA @ 600V | 1.35V @ 1.2A | -65°C~175°C | |||||||||||||||||||||||||||||||||||
| S4F | Semtech Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | RoHS Compliant | Axial | 4 | 18 Weeks | unknown | 8541.10.00.80 | UPPER | UNSPECIFIED | 4 | 150°C | 4 | Bridge Rectifier Diodes | Not Qualified | R-XUFM-X4 | BRIDGE, 4 ELEMENTS | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 150 ns | Standard | 400V | 2A | 480A | 1 | 16A | 27pF @ 5V 1MHz | 400V | 500nA @ 400V | 1.95V @ 2A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||
| USC1106 | Semtech Corporation | $95.43 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | RoHS Compliant | Axial | 2 | 18 Weeks | EAR99 | unknown | 8541.10.00.80 | WIRE | 150°C | 1 | Rectifier Diodes | Not Qualified | O-LALF-W2 | SINGLE | ISOLATED | SUPER FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 50 ns | Standard | 400V | 2.1A | 20A | 1 | 2A | 25pF @ 5V 1MHz | 400V | 10μA @ 400V | 1.25V @ 1A | -55°C~150°C |
