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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Package / Case | Number of Terminations | Factory Lead Time | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Polarity | Reference Standard | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Operating Temperature (Min) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Configuration | Case Connection | Application | Natural Thermal Resistance | Speed | Diode Element Material | Power Dissipation-Max | Rep Pk Reverse Voltage-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | JEDEC-95 Code | Forward Voltage-Max | Reference Voltage | Voltage Tol-Max | Working Test Current | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Reverse Recovery Time-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 3SM6 | Semtech Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | AVALANCHE | RoHS Compliant | Axial | 2 | 18 Weeks | no | EAR99 | unknown | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | WIRE | NOT SPECIFIED | 3SM6 | 2 | 175°C | -65°C | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | O-XALF-W2 | SINGLE | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1μA | 2 μs | Standard | 600V | 5A | 100A | 1 | 3A | 92pF @ 5V 1MHz | 600V | 1μA @ 600V | 1V @ 3A | |||||||||||||||||||||||||||||||||||||||
| MBR3520R | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -55°C | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-mbr3520r-datasheets-2094.pdf | DO-203AA, DO-4, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | EAR99 | 8541.10.00.80 | UPPER | SOLDER LUG | 1 | O-MUPM-D1 | 35A | 600A | 1μA | SINGLE | ANODE | POWER | 1.5 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1A | 20V | Schottky, Reverse Polarity | 20V | 35A | 1 | 1.5mA @ 20V | 680mV @ 35A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||
| JAN1N6630 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/590 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 150°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jantxv1n6628-datasheets-8347.pdf | E, Axial | 2 | IN PRODUCTION (Last Updated: 3 weeks ago) | no | METALLURGICALLY BONDED, HIGH RELIABILITY | Lead, Tin | 8541.10.00.80 | e0 | TIN LEAD | MIL-19500/590 | WIRE | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Not Qualified | O-LALF-W2 | 1.4A | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 990V | 50ns | Standard | 1 | 900V | 2μA @ 900V | 1.4V @ 1.4A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||
| R5021413LSWA | Powerex Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2000 | /files/powerexinc-r5020213lswa-datasheets-0476.pdf | DO-205AA, DO-8, Stud | 1 | 20 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE | unknown | 8541.10.00.80 | UPPER | HIGH CURRENT CABLE | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | O-MUPM-H1 | SINGLE | FAST SOFT RECOVERY | Standard Recovery >500ns, > 200mA (Io) | SILICON | 700 ns | Standard | 1.4kV | 125A | 1 | 1400V | 45mA @ 1400V | 2.5V @ 470A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||
| FR40DR05 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | DO-203AB, DO-5, Stud | 10 Weeks | PRODUCTION (Last Updated: 6 months ago) | 40A | 500A | 0.8 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | 25μA | 200V | 200V | 500 ns | 500 ns | Standard, Reverse Polarity | 200V | 40A | 25μA @ 100V | 1V @ 40A | -40°C~125°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N6073 | Semtech Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | Not Applicable | Non-RoHS Compliant | Axial | 2 | 12 Weeks | EAR99 | unknown | 8541.10.00.80 | NO | WIRE | 2 | 150°C | 1 | Rectifier Diodes | Not Qualified | E-XALF-W2 | SINGLE | ISOLATED | SUPER FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 50V | 1μA | 30ns | Standard | 35A | 1 | 1.7A | 28pF @ 5V 1MHz | 50V | 1μA @ 50V | 1.2V @ 1.5A | 3A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||
| 1N5831R | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -55°C | RoHS Compliant | 2013 | DO-203AA, DO-4, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | UPPER | SOLDER LUG | 1N5831R | 1 | O-MUPM-D1 | 25A | 400A | 1μA | SINGLE | ANODE | POWER | 1.8 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1A | 35V | Schottky, Reverse Polarity | 35V | 25A | 1 | 2mA @ 20V | 580mV @ 25A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||
| VS-86HFR100 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 180°C | -65°C | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs86hf80-datasheets-9123.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | EAR99 | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 1.8kA | ANODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 9mA | 1kV | Standard, Reverse Polarity | 1kV | 85A | 1800A | 1 | 1000V | 9mA @ 1000V | 1.2V @ 267A | -65°C~180°C | ||||||||||||||||||||||||||||||||||||||||||||
| MBR3530R | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -55°C | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-mbr3530r-datasheets-2100.pdf | DO-203AA, DO-4, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | EAR99 | 8541.10.00.80 | UPPER | SOLDER LUG | 1 | O-MUPM-D1 | 35A | 750mV | SINGLE | ANODE | POWER | 1.5 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 600A | 1μA | 30V | Schottky, Reverse Polarity | 30V | 35A | 1 | 1.5mA @ 20V | 680mV @ 35A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||
| 1N5822 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/620 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 150°C | -55°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan1n5822-datasheets-8479.pdf | B, Axial | 10 Weeks | 2 | IN PRODUCTION (Last Updated: 3 weeks ago) | Lead, Tin | Single | 3A | 700mV | Fast Recovery =< 500ns, > 200mA (Io) | 40V | 150A | Schottky | 40V | 3A | 40V | 100μA @ 40V | 500mV @ 3A | 3A | -65°C~125°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N6074 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 155°C | -65°C | AVALANCHE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n6080-datasheets-8464.pdf | A, Axial | 2 | 7 Weeks | 2 | no | EAR99 | HIGH RELIABILITY | Lead, Tin | 8541.10.00.80 | e0 | TIN LEAD | MIL-19500/503 | WIRE | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Not Qualified | 3A | 2.04V | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100V | 35A | 30 ns | Standard | 100V | 850mA | 0.85A | 1μA @ 100V | 2.04V @ 9.4A | -65°C~155°C | |||||||||||||||||||||||||||||||||||||||
| JANTXV1N6620 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/585 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 150°C | -65°C | AVALANCHE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jantxv1n6622-datasheets-8344.pdf | A, Axial | 2 | 18 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | no | EAR99 | HIGH RELIABILITY | Lead, Tin | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500 | WIRE | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Qualified | O-LALF-W2 | 1.2A | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 220V | 0.5μA | DO-41 | 30 ns | Standard | 220V | 1.2A | 1 | 500nA @ 220V | 1.4V @ 1.2A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||
| JAN1N649-1 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/240 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 150°C | -65°C | ZENER | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n6491-datasheets-5760.pdf | DO-204AH, DO-35, Axial | 2 | 8 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | HIGH RELIABILITY, METALLURGICALLY BONDED | No | 8541.10.00.50 | e0 | Tin/Lead (Sn/Pb) | UNIDIRECTIONAL | MIL-19500 | WIRE | 2 | Single | 1 | Qualified | 400mA | 1V | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1.5W | 50nA | 600V | 5A | DO-41 | 5.6V | 1% | 45mA | Standard | 50nA @ 600V | 1V @ 400mA | -65°C~175°C | ||||||||||||||||||||||||||||||||||||
| VS-80APF04PBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs80apf02m3-datasheets-6175.pdf | TO-247-3 | 3 | 8 Weeks | EAR99 | FREE WHEELING DIODE | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | NOT APPLICABLE | 150°C | NOT APPLICABLE | 1 | R-PSFM-T3 | SINGLE | CATHODE | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | TO-247AC | 190 ns | Standard | 400V | 80A | 1000A | 1 | 400V | 100μA @ 400V | 1.25V @ 80A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N5420US | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/411 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n5416us-datasheets-6131.pdf | SQ-MELF, B | 2 | 12 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/411L | END | WRAP AROUND | 235 | 2 | Single | 20 | 1 | Qualified | 1.5V | ISOLATED | FAST RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1μA | 600V | 80A | 400 ns | Standard | 600V | 3A | 1 | 3A | 1μA @ 600V | 1.5V @ 9A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||
| IDW40G65C5BXKSA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolSiC™+ | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | /files/infineontechnologies-idw40g65c5bxksa1-datasheets-4617.pdf | TO-247-3 | 3 | 18 Weeks | yes | EAR99 | PD-CASE | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 175°C | NOT SPECIFIED | 2 | R-PSFM-T3 | COMMON CATHODE, 2 ELEMENTS | CATHODE | EFFICIENCY | No Recovery Time > 500mA (Io) | 112W | 650V | 210μA | 0ns | Silicon Carbide Schottky | 87A | 1 | 590pF @ 1V 1MHz | 650V | 210μA @ 650V | 1.7V @ 20A | 20A DC | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N5551US | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/420 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | AVALANCHE | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n5554us-datasheets-4685.pdf | SQ-MELF, B | 2 | 12 Weeks | 2 | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | END | WRAP AROUND | 235 | Single | 20 | 1 | Qualified | 5A | 1.2V | ISOLATED | POWER | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1μA | 400V | 100A | 2 μs | Standard | 1 | 3A | 1μA @ 400V | 1.2V @ 9A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||
| DS35-08A | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 180°C | -40°C | AVALANCHE | ROHS3 Compliant | 2000 | /files/ixys-dsi3508a-datasheets-1057.pdf | DO-203AB, DO-5, Stud | 1 | 18 Weeks | 2 | yes | EAR99 | 8541.10.00.80 | UPPER | SOLDER LUG | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | O-MUPM-D1 | 1.55V | 650A | ANODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 4mA | 690A | 800V | Standard | 800V | 49A | 1 | 4mA @ 800V | 1.55V @ 150A | -40°C~180°C | ||||||||||||||||||||||||||||||||||||||||
| FR40GR02 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2010 | DO-203AB, DO-5, Stud | 1 | 10 Weeks | No SVHC | 2 | PRODUCTION (Last Updated: 6 months ago) | yes | EAR99 | 8541.10.00.80 | UPPER | SOLDER LUG | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 40A | 1.4V | 500A | ANODE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500A | 25μA | 400V | 400V | 200 ns | 200 ns | Standard, Reverse Polarity | 400V | 40A | 1 | 25μA @ 100V | 1V @ 40A | -40°C~125°C | ||||||||||||||||||||||||||||||||||||||||||
| JAN1N6631 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/590 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 150°C | -65°C | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-jantxv1n6628-datasheets-8347.pdf | E, Axial | 2 | 18 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | METALLURGICALLY BONDED, HIGH RELIABILITY | Lead, Tin | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/590 | WIRE | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Qualified | 1.4A | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1.1kV | 60 ns | Standard | 1.1kV | 1.4A | 1 | 1100V | 2μA @ 1000V | 1.6V @ 1A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||
| FR40M05 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | DO-203AB, DO-5, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 6 months ago) | yes | UPPER | SOLDER LUG | 150°C | 1 | O-MUPM-D1 | 40A | 500A | SINGLE | CATHODE | 0.8 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 25μA | 1kV | 1kV | 500 ns | 500 ns | Standard | 1kV | 40A | 1 | 1000V | 25μA @ 100V | 1V @ 40A | -40°C~125°C | ||||||||||||||||||||||||||||||||||||||||||||||||
| MBR3520 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -55°C | RoHS Compliant | 2013 | /files/genesicsemiconductor-mbr3520-datasheets-2081.pdf | DO-203AA, DO-4, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | UPPER | SOLDER LUG | 1 | O-MUPM-D1 | 35A | 600A | 1μA | SINGLE | CATHODE | POWER | 1.5 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1A | 20V | Schottky | 20V | 35A | 1 | 1.5mA @ 20V | 680mV @ 35A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||
| FR40GR05 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | DO-203AB, DO-5, Stud | 10 Weeks | PRODUCTION (Last Updated: 6 months ago) | 40A | 500A | 0.8 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | 25μA | 400V | 400V | 500 ns | 500 ns | Standard, Reverse Polarity | 400V | 40A | 25μA @ 100V | 1V @ 40A | -40°C~125°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FR40BR05 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | DO-203AB, DO-5, Stud | 10 Weeks | PRODUCTION (Last Updated: 6 months ago) | 40A | 500A | 0.8 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | 25μA | 100V | 100V | 500 ns | 500 ns | Standard, Reverse Polarity | 100V | 40A | 25μA @ 100V | 1V @ 40A | -40°C~125°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-SD200R16PC | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Stud Mount | Bulk | 1 (Unlimited) | 180°C | -40°C | ROHS3 Compliant | 2007 | /files/vishaysemiconductordiodesdivision-vssd200n20pc-datasheets-5111.pdf | DO-205AC, DO-30, Stud | 1 | 14 Weeks | 2 | EAR99 | unknown | 8541.10.00.80 | UPPER | HIGH CURRENT CABLE | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | O-CUPM-H1 | 1.4V | 4.92kA | ANODE | HIGH VOLTAGE HIGH POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 15mA | 4.92kA | 1.6kV | Standard, Reverse Polarity | 1.6kV | 200A | 1 | 1600V | 1.4V @ 630A | -40°C~180°C | ||||||||||||||||||||||||||||||||||||||||||||
| 1N5552US | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n5554us-datasheets-4685.pdf | SQ-MELF, B | 2 | 7 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | Lead, Tin | Yes | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | END | WRAP AROUND | 235 | 2 | Single | 20 | 1 | Qualified | 5A | 1.2V | ISOLATED | POWER | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1μA | 600V | 100A | 2 μs | Standard | 600V | 3A | 1 | 3A | 1μA @ 600V | 1.2V @ 9A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||
| VS-SD1100C04C | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Stud | Stud Mount | Bulk | 1 (Unlimited) | 180°C | -40°C | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vssd1100c12c-datasheets-1743.pdf | DO-200AA, A-PUK | 2 | 12 Weeks | EAR99 | unknown | 8541.10.00.80 | END | NO LEAD | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | O-CEDB-N2 | 13.6kA | HIGH VOLTAGE HIGH POWER | Standard Recovery >500ns, > 200mA (Io) | SILICON | 15mA | 400V | Standard | 400V | 1.4kA | 13600A | 1 | 1400A | 35mA @ 400V | 1.31V @ 1500A | 1400A | ||||||||||||||||||||||||||||||||||||||||||||||
| 1N4052R | Powerex Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/powerexinc-1n4044-datasheets-8638.pdf | DO-205AB, DO-9, Stud | 1 | 12 Weeks | unknown | 8541.10.00.80 | UPPER | HIGH CURRENT CABLE | 1N4052 | 190°C | 1 | Rectifier Diodes | Not Qualified | O-MUPM-H1 | SINGLE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1.35V | Standard, Reverse Polarity | 600V | 275A | 5000A | 1 | 600V | 12mA @ 600V | -65°C~190°C | ||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTXV1N3768 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/297 | Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | DO-203AB, DO-5, Stud | 1 | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | UPPER | SOLDER LUG | 1 | Single | 1 | Qualified | O-MUPM-D1 | 35A | CATHODE | POWER | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1000V | 10μA | 1kV | 500A | Standard | 1 | 5μs | 1000V | 10μA @ 1000V | 1.4V @ 110A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||
| MBR35100R | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -55°C | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-mbr35100r-datasheets-2089.pdf | DO-203AA, DO-4, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | EAR99 | 8541.10.00.80 | UPPER | SOLDER LUG | 1 | O-MUPM-D1 | 35A | 600A | 1μA | SINGLE | ANODE | POWER | 1.5 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1A | 100V | Schottky, Reverse Polarity | 100V | 35A | 1 | 1.5mA @ 20V | 840mV @ 35A | -55°C~150°C |
