Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Output Current | Forward Current | Forward Voltage | Max Surge Current | Max Dual Supply Voltage | Configuration | Case Connection | Drain to Source Voltage (Vdss) | Application | Natural Thermal Resistance | Speed | Diode Element Material | Power Dissipation-Max | Rep Pk Reverse Voltage-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | JEDEC-95 Code | Forward Voltage-Max | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Reverse Recovery Time-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
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SIDC53D120H8X1SA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/infineontechnologies-sidc53d120h8x1sa1-datasheets-8836.pdf | Die | Lead Free | 1 | 17 Weeks | EAR99 | 8541.10.00.40 | Halogen Free | YES | UPPER | NO LEAD | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | S-XUUC-N1 | 1.2kV | SINGLE | 1.2kV | FAST SOFT RECOVERY | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1200V | 27μA | Standard | 1 | 1200V | 27μA @ 1200V | 1.97V @ 100A | 100A DC | -40°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||
VS-87HFR20 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs85hf60-datasheets-0683.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | EAR99 | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | 180°C | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 1.8kA | ANODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 9mA | 200V | Standard, Reverse Polarity | 200V | 85A | 1800A | 1 | 1.2V @ 267A | -65°C~180°C | |||||||||||||||||||||||||||||||||||||||||||||||||
VS-72HFR120 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 180°C | -65°C | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs70hf160-datasheets-8110.pdf | DO-203AB, DO-5, Stud | 36.5mm | 17.4mm | 13 Weeks | 2 | Single | DO-203AB (DO-5) | 70A | 1.25kA | Standard Recovery >500ns, > 200mA (Io) | 1.05kA | 9mA | 1.2kV | 1.2kV | Standard, Reverse Polarity | 1.2kV | 70A | 1200V | 1.35V @ 220A | 70A | -65°C~180°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
CPD76X-1N5817-CT20 | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tray | 1 (Unlimited) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/centralsemiconductorcorp-cpd76x1n5817ct20-datasheets-8839.pdf | Die | 10 Weeks | Die | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 20V | 1A | 20V | 1mA @ 20V | 450mV @ 1A | 1A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
VS-SD600R16PC | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 180°C | -40°C | ROHS3 Compliant | 2007 | /files/vishaysemiconductordiodesdivision-vssd600n04pc-datasheets-8143.pdf | B-8 | 1 | 14 Weeks | 8 | yes | EAR99 | No | UPPER | HIGH CURRENT CABLE | Single | 1 | O-CUPM-H1 | 600A | 1.13V | 13.6kA | HIGH VOLTAGE HIGH POWER | 0.04 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 35mA | 1.6kV | 13.6kA | 1.6kV | Standard | 1.6kV | 600A | 1 | 1600V | 35mA @ 1600V | 1.31V @ 1500A | -40°C~180°C | |||||||||||||||||||||||||||||||||||||||||||||
A451PD | Powerex Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/powerexinc-a451pd-datasheets-8845.pdf | DO-200AC, K-PUK | 12 Weeks | 2 | DO-200AC, K-PUK | Standard Recovery >500ns, > 200mA (Io) | Standard | 1.4kV | 2.5kA | 1400V | 50mA @ 1400V | 1.4V @ 5000A | 2500A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
JANTX1N5806US/TR | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/477 | Surface Mount | Tape & Reel (TR) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n5804us-datasheets-2472.pdf | SQ-MELF, A | D-5A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | Standard | 25pF @ 10V 1MHz | 150V | 1μA @ 150V | 975mV @ 2.5A | 1A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FR16M05 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | DO-203AA, DO-4, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | UPPER | SOLDER LUG | 150°C | 1 | O-MUPM-D1 | 16A | 225A | SINGLE | CATHODE | 1.5 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 25μA | 1kV | 1kV | 500 ns | 500 ns | Standard | 1kV | 16A | 1 | 1000V | 25μA @ 100V | 1.1V @ 16A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||
1N2128A | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-1n2128a-datasheets-0764.pdf | DO-203AB, DO-5, Stud | 6 Weeks | PRODUCTION (Last Updated: 5 months ago) | 1N2128 | DO-5 | 60A | 1.05kA | 0.65 °C/W | Standard Recovery >500ns, > 200mA (Io) | 10μA | 50V | 50V | Standard | 50V | 60A | 50V | 10μA @ 50V | 1.1V @ 60A | 60A | -65°C~200°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FR20A02 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | DO-203AB, DO-5, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | EAR99 | 8541.10.00.80 | UPPER | SOLDER LUG | 150°C | 1 | O-MUPM-D1 | 20A | 250A | SINGLE | CATHODE | 0.6 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 25μA | 50V | 50V | 200 ns | 200 ns | Standard | 50V | 20A | 1 | 25μA @ 50V | 1V @ 20A | -40°C~125°C | |||||||||||||||||||||||||||||||||||||||||||||||||
JAN1N5187 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/424 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan1n5186-datasheets-4010.pdf | B, Axial | 2 | 8 Weeks | 2 | IN PRODUCTION (Last Updated: 2 weeks ago) | No | 8541.10.00.80 | WIRE | 2 | Single | 1 | Qualified | 3A | ISOLATED | FAST RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 2μA | 200V | 80A | 200 ns | Standard | 1 | 3A | 2μA @ 200V | 1.5V @ 9A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||
JANTX1N5811 |
Min: 1 Mult: 1 |
0 | 0x0x0 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
1N6639US | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 175°C | -65°C | Non-RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n6640us-datasheets-2259.pdf | 2 | 6 Weeks | 2 | no | EAR99 | Lead, Tin | No | 8541.10.00.70 | e0 | TIN LEAD | END | WRAP AROUND | 2 | Single | 1 | 300mA | 1.2V | ISOLATED | SILICON | 75V | 2.5A | 0.1μA | RECTIFIER DIODE | 0.3A | 0.004μs | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
JANTX1N3614 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/228 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n3611-datasheets-7844.pdf | A, Axial | Contains Lead | 2 | 12 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | HIGH RELIABILITY | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500 | WIRE | 2 | Single | 1 | Qualified | 1.1V | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1μA | 800V | 30A | DO-41 | Standard | 800V | 1A | 1A | 1μA @ 800V | 1.1V @ 1A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||
1N2137AR | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-1n2137ar-datasheets-0751.pdf | DO-203AB, DO-5, Stud | 1 | 6 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | UPPER | SOLDER LUG | 1N2137AR | 200°C | 1 | O-MUPM-D1 | 60A | 1.05kA | SINGLE | ANODE | GENERAL PURPOSE | 0.65 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 500V | 500V | Standard, Reverse Polarity | 500V | 60A | 1 | 10μA @ 50V | 1.1V @ 60A | -65°C~200°C | |||||||||||||||||||||||||||||||||||||||||||||||||
1N2129AR | GeneSiC Semiconductor | $10.81 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-1n2129ar-datasheets-0752.pdf | DO-203AB, DO-5, Stud | 1 | 6 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | UPPER | SOLDER LUG | 1N2129AR | 200°C | 1 | O-MUPM-D1 | 60A | 1.05kA | SINGLE | ANODE | GENERAL PURPOSE | 0.65 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 100V | 100V | Standard, Reverse Polarity | 100V | 60A | 1 | 10μA @ 50V | 1.1V @ 60A | -65°C~200°C | ||||||||||||||||||||||||||||||||||||||||||||||||
VS-SD3000C08K | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Clamp | Clamp On | Bulk | 1 (Unlimited) | 180°C | -40°C | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vssd3000c10k-datasheets-4382.pdf | DO-200AC, K-PUK | 2 | 12 Weeks | EAR99 | unknown | 8541.10.00.80 | END | NO LEAD | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | O-CEDB-N2 | 3.8kA | 37.5kA | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 75mA | 800V | Standard | 800V | 3.8kA | 1 | 1925A | 75mA @ 800V | 1.22V @ 6000A | 3800A | ||||||||||||||||||||||||||||||||||||||||||||||||
VS-SD800C40L | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Clamp On | Bulk | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2007 | /files/vishaysemiconductordiodesdivision-vssd800c24l-datasheets-8701.pdf | DO-200AB, B-PUK | 2 | 18 Weeks | EAR99 | unknown | 8541.10.00.80 | END | NO LEAD | NOT SPECIFIED | SD800C*L | Single | NOT SPECIFIED | 1 | O-CEDB-N2 | 1.065kA | 12.8kA | HIGH VOLTAGE HIGH POWER | Standard Recovery >500ns, > 200mA (Io) | SILICON | 50mA | 4kV | Standard | 4kV | 1.065kA | 1 | 1065A | 4000V | 50mA @ 4000V | 1.95V @ 2000A | 1065A | ||||||||||||||||||||||||||||||||||||||||||||||
SET010204 | Semtech Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Screw, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 175°C | -55°C | Non-RoHS Compliant | Module | 2 | 18 Weeks | 2 | EAR99 | No | 8541.10.00.80 | RADIAL | SOLDER LUG | SET01 | Single | 1 | Rectifier Diodes | 15A | ISOLATED | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1μA | 400V | 150A | 150 ns | Standard | 400V | 15A | 1 | 1μA @ 400V | 1.5V @ 9A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||
VS-SD600N22PC | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2014 | /files/vishaysemiconductordiodesdivision-vssd600n04pc-datasheets-8143.pdf | B-8 | 51.93mm | 107.5mm | 45mm | 1 | 14 Weeks | 2 | yes | EAR99 | No | 8541.10.00.80 | UPPER | HIGH CURRENT CABLE | Single | 1 | O-CUPM-H1 | 600A | 1.44V | 11kA | CATHODE | HIGH VOLTAGE HIGH POWER | Standard Recovery >500ns, > 200mA (Io) | SILICON | 11kA | 35mA | 2.2kV | 11kA | 2.2kV | Standard | 2.2kV | 600A | 1 | 2200V | 1.44V @ 1500A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||
1N2129A | GeneSiC Semiconductor | $10.80 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-1n2129a-datasheets-0741.pdf | DO-203AB, DO-5, Stud | 6 Weeks | PRODUCTION (Last Updated: 5 months ago) | 1N2129 | DO-5 | 60A | 1.05kA | 0.65 °C/W | Standard Recovery >500ns, > 200mA (Io) | 10μA | 100V | 100V | Standard | 100V | 60A | 100V | 10μA @ 50V | 1.1V @ 60A | 60A | -65°C~200°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
VS-87HF40 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 180°C | -65°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs85hf60-datasheets-0683.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | EAR99 | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 1.8kA | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 9mA | 400V | Standard | 400V | 85A | 1800A | 1 | 1.2V @ 267A | -65°C~180°C | ||||||||||||||||||||||||||||||||||||||||||||||||
VS-40HFLR60S02 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 125°C | -40°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs85hfl60s05-datasheets-4835.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | EAR99 | FREE WHEELING DIODE | unknown | 8541.10.00.80 | UPPER | SOLDER LUG | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 420A | ANODE | 0.25 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 600V | 200 ns | 200 ns | Standard, Reverse Polarity | 600V | 40A | 500A | 1 | 100μA @ 600V | 1.95V @ 40A | -40°C~125°C | |||||||||||||||||||||||||||||||||||||||||||||
ISOPAC0112 | Semtech Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | RoHS Compliant | 2 | 18 Weeks | EAR99 | unknown | 8541.10.00.80 | NO | RADIAL | SOLDER LUG | ISOPAC | 2 | 175°C | 1 | Rectifier Diodes | Not Qualified | O-MRFM-D2 | SINGLE | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1μA | 2 μs | Standard | 600V | 15A | 100A | 1 | 600V | 1μA @ 600V | 1.2V @ 9A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||
JANTXV1N5618 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/427 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 125°C | -55°C | AVALANCHE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n5616-datasheets-7752.pdf | A, Axial | 2 | 14 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | HIGH RELIABILITY | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500 | WIRE | 2 | Single | 1 | Qualified | 1.3V | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 500nA | 600V | 30A | 2 μs | Standard | 600V | 1A | 1A | 500nA @ 600V | 1.3V @ 3A | -65°C~200°C | |||||||||||||||||||||||||||||||||||||||||
VS-40HFL20S02 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 125°C | -40°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs85hfl60s05-datasheets-4835.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | EAR99 | FREE WHEELING DIODE | unknown | 8541.10.00.80 | UPPER | SOLDER LUG | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 40A | 420A | CATHODE | 0.25 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 200V | 200 ns | 200 ns | Standard | 200V | 40A | 1 | 100μA @ 200V | 1.95V @ 40A | -40°C~125°C | |||||||||||||||||||||||||||||||||||||||||||||
DZ600N12KHPSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Screw, Surface Mount | Chassis Mount | Bulk | Not Applicable | 150°C | -40°C | RoHS Compliant | 2003 | /files/infineontechnologies-dz600n18khpsa1-datasheets-2377.pdf | Module | 101mm | 52mm | 50mm | Lead Free | 2 | 8 Weeks | 600 | EAR99 | UL RECOGNIZED | 8541.10.00.80 | Not Halogen Free | UPPER | UNSPECIFIED | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | R-XUFM-X2 | 735A | 600A | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 19kA | 40mA | 1.2kV | 22A | 1.2kV | Standard | 1 | 1200V | 40mA @ 1200V | 1.4V @ 2200A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||
JANTX1N6643U | Microsemi Corporation | $9.27 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/578 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1996 | SQ-MELF, B | 2 | 8 Weeks | 2 | IN PRODUCTION (Last Updated: 4 weeks ago) | no | EAR99 | METALLURGICALLY BONDED | No | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/578E | END | WRAP AROUND | 2 | Single | 1 | Qualified | 300mA | 1.2V | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 0.75W | 500nA | 50V | 2.5A | 6 ns | Standard | 0.3A | 500nA @ 50V | 1.2V @ 100mA | 300mA DC | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||
VS-87HFR120 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 180°C | -65°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs85hf60-datasheets-0683.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | EAR99 | No | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | Single | 1 | O-MUPM-D1 | 85A | 1.8kA | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 9mA | 1.2kV | 1.8kA | 1.2kV | Standard, Reverse Polarity | 1.2kV | 85A | 1 | 1200V | 1.2V @ 267A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||
JANTXV1N7043CCT1 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SCHOTTKY | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n7043cat1-datasheets-8281.pdf | 3 | 8 Weeks | EAR99 | HIGH RELIABILITY, LOW POWER LOSS | 8541.10.00.80 | MIL-19500/730 | NO | SINGLE | PIN/PEG | 3 | 150°C | 2 | Rectifier Diodes | Qualified | S-MSFM-P3 | COMMON CATHODE, 2 ELEMENTS | ISOLATED | EFFICIENCY | SILICON | 100V | TO-254AA | 0.95V | RECTIFIER DIODE | 175A | 1 | 35A |
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