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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | Number of Contacts | Orientation | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | Contact Resistance | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Operating Temperature (Min) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Pitch | Forward Current | Forward Voltage | Max Surge Current | Configuration | Case Connection | Application | Natural Thermal Resistance | Speed | Diode Element Material | Power Dissipation-Max | Rep Pk Reverse Voltage-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | JEDEC-95 Code | Forward Voltage-Max | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Regulation Current-Nom (Ireg) | Limiting Voltage-Max | Dynamic Impedance-Min | Current - Average Rectified (Io) | Operating Temperature - Junction |
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| VS-85HFR40M8 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Tube | 1 (Unlimited) | ROHS3 Compliant | 2017 | /files/vishaysemiconductordiodesdivision-vs85hfr40m8-datasheets-8996.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | EAR99 | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | 180°C | NOT SPECIFIED | 1 | O-MUPM-D1 | SINGLE | ANODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 9000μA | Standard, Reverse Polarity | 400V | 85A | 1800A | 1 | 400V | 9mA @ 400V | 1.2V @ 267A | -65°C~180°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-85HF40M8 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Tube | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs85hfr40m8-datasheets-8996.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | EAR99 | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | 180°C | NOT SPECIFIED | 1 | O-MUPM-D1 | SINGLE | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 9000μA | Standard | 400V | 85A | 1800A | 1 | 400V | 9mA @ 400V | 1.2V @ 267A | -65°C~180°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N7055UR-1 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Bulk | Non-RoHS Compliant | 8 Weeks | YES | Current Regulator Diodes | SILICON | 0.5W | 50V | CURRENT REGULATOR DIODE | 10mA | 7.2V | 10000Ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-85HFR80 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 180°C | -65°C | ROHS3 Compliant | 2016 | /files/vishaysemiconductordiodesdivision-vs85hf60-datasheets-0683.pdf | DO-203AB, DO-5, Stud | 36.5mm | 17.35mm | 1 | 13 Weeks | Unknown | 2 | EAR99 | No | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | Single | 1 | O-MUPM-D1 | 85A | 1.2V | 1.8kA | GENERAL PURPOSE | 0.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1.369kA | 9mA | 800V | 1.8kA | 800V | 500 ns | Standard, Reverse Polarity | 800V | 85A | 1 | 9mA @ 800V | 1.2V @ 267A | -65°C~180°C | |||||||||||||||||||||||||||||||||||||||||||
| JAN1N5419 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/411 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n5420-datasheets-7853.pdf | B, Axial | 2 | 8 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | No | 8541.10.00.80 | MIL-19500/411L | WIRE | 2 | Single | 1 | Qualified | 1.5V | ISOLATED | FAST RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1μA | 500V | 80A | 250 ns | Standard | 500V | 3A | 1 | 3A | 1μA @ 500V | 1.5V @ 9A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||
| 1N6677UR-1 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Bulk | 1 (Unlimited) | 125°C | -65°C | SCHOTTKY | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-cdll6676-datasheets-6366.pdf | Contains Lead | 2 | 10 Weeks | 2 | IN PRODUCTION (Last Updated: 3 weeks ago) | no | EAR99 | METALLURGICALLY BONDED | Lead, Tin | 8541.10.00.70 | e0 | TIN LEAD | END | WRAP AROUND | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Not Qualified | 200mA | ISOLATED | SILICON | 40V | RECTIFIER DIODE | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JAN1N5811US | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/477 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | /files/microsemicorporation-1n5809us-datasheets-7944.pdf | SQ-MELF, B | 2 | 8 Weeks | 2 | IN PRODUCTION (Last Updated: 2 weeks ago) | no | HIGH RELIABILITY | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/477 | END | WRAP AROUND | 2 | Single | 1 | Rectifier Diodes | Qualified | 6A | 875mV | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5W | 5μA | 150V | 125A | 30 ns | Standard | 150V | 6A | 1 | 3A | 60pF @ 10V 1MHz | 5μA @ 150V | 875mV @ 4A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||
| VS-87HF100 | Vishay Semiconductor Diodes Division | $2.88 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 180°C | -65°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs85hf60-datasheets-0683.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | EAR99 | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 1.8kA | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 9mA | 1kV | Standard | 400V | 85A | 1800A | 1 | 1.2V @ 267A | -65°C~180°C | |||||||||||||||||||||||||||||||||||||||||||||||||||
| JAN1N5614US | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/427 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 200°C | -65°C | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n5618us-datasheets-0738.pdf | SQ-MELF, A | Contains Lead | 2 | 8 Weeks | 2 | IN PRODUCTION (Last Updated: 3 weeks ago) | no | EAR99 | METALLURGICALLY BONDED | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | END | WRAP AROUND | 2 | Single | 1 | Rectifier Diodes | Qualified | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 500nA | 200V | 30A | 2 μs | Standard | 200V | 1A | 1A | 500nA @ 200V | 1.3V @ 3A | -65°C~200°C | |||||||||||||||||||||||||||||||||||||||||||||
| VS-1N3766 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 190°C | -65°C | ROHS3 Compliant | 2014 | /files/vishaysemiconductordiodesdivision-vs1n1184ra-datasheets-5851.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | Unknown | 2 | EAR99 | LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | 1N3766 | Single | 1 | Rectifier Diodes | O-MUPM-D1 | 35A | 1.8V | 400A | CATHODE | POWER | 0.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 400A | 4mA | 800V | 400A | 800V | Standard | 800V | 35A | 1 | 4mA @ 800V | 1.8V @ 110A | -65°C~190°C | ||||||||||||||||||||||||||||||||||||||||||
| VS-1N2160 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Bulk | 1 (Unlimited) | ROHS3 Compliant | 600 | 1 | 13 Weeks | LOW LEAKAGE CURRENT | unknown | NO | UPPER | SOLDER LUG | 200°C | -65°C | 1 | O-MUPM-D1 | SINGLE | CATHODE | POWER | SILICON | 700V | 2500μA | DO-203AB | 1.3V | RECTIFIER DIODE | 800A | 1 | 40A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N7052UR-1 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Bulk | Non-RoHS Compliant | 8 Weeks | YES | Current Regulator Diodes | SILICON | 0.5W | 60V | CURRENT REGULATOR DIODE | 7.5mA | 5.4V | 50000Ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N7048UR-1 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Bulk | Non-RoHS Compliant | 8 Weeks | YES | Current Regulator Diodes | SILICON | 0.5W | 80V | CURRENT REGULATOR DIODE | 5.1mA | 3.67V | 100000Ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N5804 | Semtech Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | Not Applicable | 175°C | -65°C | RoHS Compliant | Axial | 16 Weeks | 2 | No | 1N5804 | Single | Axial | 3.3A | Fast Recovery =< 500ns, > 200mA (Io) | 1μA | 100V | 35A | 25 ns | Standard | 25pF @ 5V 1MHz | 100V | 1μA @ 100V | 875mV @ 1A | 3.3A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JAN1N5623 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/429 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan1n5617-datasheets-5896.pdf | A, Axial | 2 | 8 Weeks | 2 | IN PRODUCTION (Last Updated: 2 weeks ago) | EAR99 | No | 8541.10.00.80 | WIRE | 2 | Single | 1 | Qualified | 1.6V | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500nA | 1kV | 30A | DO-7 | 500 ns | Standard | 1kV | 1A | 1A | 1000V | 500nA @ 1000V | 1.6V @ 3A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||
| 1N5806 | Semtech Corporation | $6.98 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | Not Applicable | 175°C | -65°C | RoHS Compliant | Axial | 16 Weeks | 2 | 1N5806 | Single | Axial | 2.5A | Fast Recovery =< 500ns, > 200mA (Io) | 1μA | 150V | 35A | 25 ns | Standard | 25pF @ 5V 1MHz | 150V | 1μA @ 150V | 875mV @ 1A | 3.3A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-88HFR40 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 180°C | -65°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs85hf60-datasheets-0683.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | EAR99 | No | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | Single | 1 | O-MUPM-D1 | 85A | 1.8kA | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 9mA | 400V | 1.8kA | 400V | Standard, Reverse Polarity | 400V | 85A | 1 | 1.2V @ 267A | -65°C~180°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N7050UR-1 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Bulk | Non-RoHS Compliant | 8 Weeks | YES | Current Regulator Diodes | SILICON | 0.5W | 70V | CURRENT REGULATOR DIODE | 6.2mA | 4.46V | 80000Ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSB1A80 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 125°C | -55°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jantx1n58191-datasheets-8336.pdf | DO-204AL, DO-41, Axial | 2 | 2 | no | EAR99 | METALLURGICALLY BONDED | No | 8541.10.00.80 | e0 | TIN LEAD | WIRE | 2 | Single | 1 | 1A | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100nA | 80V | Schottky | 80V | 1A | 1A | 100μA @ 80V | 690mV @ 1A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-85HFLR10S02 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 125°C | -40°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs85hfl60s05-datasheets-4835.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | EAR99 | FREE WHEELING DIODE | unknown | 8541.10.00.80 | UPPER | SOLDER LUG | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 1.151kA | ANODE | 0.25 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 100V | 200 ns | 200 ns | Standard, Reverse Polarity | 100V | 85A | 1369A | 1 | 100μA @ 100V | 1.75V @ 266.9A | -40°C~125°C | |||||||||||||||||||||||||||||||||||||||||||||||||
| 1N7051UR-1 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Bulk | Non-RoHS Compliant | 8 Weeks | YES | Current Regulator Diodes | SILICON | 0.5W | 70V | CURRENT REGULATOR DIODE | 6.8mA | 4.9V | 70000Ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N7053UR-1 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Bulk | Non-RoHS Compliant | 8 Weeks | YES | Current Regulator Diodes | SILICON | 0.5W | 60V | CURRENT REGULATOR DIODE | 8.2mA | 5.9V | 30000Ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-1N2133A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 190°C | -65°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs1n1184ra-datasheets-5851.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | 2 | EAR99 | LOW LEAKAGE CURRENT | unknown | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | 1N2133 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | O-MUPM-D1 | 900A | CATHODE | POWER | 0.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10mA | 300V | Standard | 300V | 60A | 1 | 10mA @ 300V | 1.3V @ 188A | -65°C~200°C | ||||||||||||||||||||||||||||||||||||||||||||||
| FR16BR02 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud, Through Hole | Chassis, Stud Mount | Bulk | 1 (Unlimited) | Solder | 75°C | 0°C | RoHS Compliant | DO-203AA, DO-4, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | 7 | Right Angle | 6mOhm | UPPER | 1 | O-MUPM-D1 | 3.96mm | 16A | 225A | SINGLE | ANODE | 1.5 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 25μA | 100V | 100V | 200 ns | 200 ns | Standard, Reverse Polarity | 100V | 16A | 1 | 25μA @ 100V | 900mV @ 16A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N5189US | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n5188us-datasheets-8942.pdf | E-MELF | 2 | 17 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | Yes | 8541.10.00.80 | e0 | TIN LEAD | END | WRAP AROUND | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | 3A | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 2μA | 500V | 80A | 300 ns | Standard | 500V | 3A | 1 | 3A | 2μA @ 500V | 1.5V @ 9A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||
| 1N5802 | Semtech Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | Not Applicable | Non-RoHS Compliant | Axial | 16 Weeks | 1N5802 | Axial | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | Standard | 25pF @ 5V 1MHz | 50V | 1μA @ 50V | 875mV @ 1A | 3.3A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JAN1N5554 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/420 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | AVALANCHE | Non-RoHS Compliant | /files/microsemicorporation-1n5554-datasheets-7989.pdf | B, Axial | Contains Lead | 2 | 8 Weeks | 2 | IN PRODUCTION (Last Updated: 3 weeks ago) | EAR99 | HIGH RELIABILITY | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500 | WIRE | 2 | Single | 1 | Rectifier Diodes | Qualified | 5A | 1.3V | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1μA | 1kV | 100A | 2 μs | Standard | 1kV | 3A | 1 | 3A | 1000V | 1μA @ 1000V | 1.3V @ 9A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||
| JANTX1N5712-1 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/444 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 150°C | -65°C | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n5712-datasheets-5772.pdf | DO-204AH, DO-35, Axial | Contains Lead | 2 | 8 Weeks | 2 | no | EAR99 | METALLURGICALLY BONDED | No | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/444 | WIRE | 2 | Single | 1 | Qualified | 75mA | 1V | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 16V | 20V | Schottky | 0.075A | 2pF @ 0V 1MHz | 150nA @ 16V | 1V @ 35mA | 750mA | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||
| 1N7049UR-1 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Bulk | Non-RoHS Compliant | 8 Weeks | YES | Current Regulator Diodes | SILICON | 0.5W | 80V | CURRENT REGULATOR DIODE | 5.6mA | 4.03V | 90000Ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-85HFL10S02 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 125°C | -40°C | ROHS3 Compliant | 2017 | /files/vishaysemiconductordiodesdivision-vs85hfl60s05-datasheets-4835.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | FREE WHEELING DIODE | unknown | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 85A | 1.151kA | CATHODE | 0.25 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 100V | 1.75V | 200 ns | 200 ns | Standard | 100V | 85A | 1 | 100μA @ 100V | -40°C~125°C |
