Products
Manufacturer
RFQ
NEWS
ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | Number of Contacts | Orientation | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Operating Temperature (Min) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Pitch | Forward Current | Forward Voltage | Max Surge Current | Configuration | Case Connection | Application | Natural Thermal Resistance | Speed | Diode Element Material | Power Dissipation-Max | Rep Pk Reverse Voltage-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | JEDEC-95 Code | Forward Voltage-Max | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| FR20M05 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | DO-203AB, DO-5, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | UPPER | SOLDER LUG | 150°C | 1 | O-MUPM-D1 | 20A | 250A | SINGLE | CATHODE | 0.6 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 25μA | 1kV | 1kV | 500 ns | 500 ns | Standard | 1kV | 20A | 1 | 1000V | 25μA @ 800V | 1V @ 20A | -40°C~125°C | |||||||||||||||||||||||||||||||||||||||||||||||||||
| SCHJ15K | Semtech Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | Non-RoHS Compliant | Axial | 2 | 18 Weeks | 2 | no | EAR99 | unknown | 8541.10.00.70 | e0 | TIN LEAD | WIRE | NOT SPECIFIED | 2 | 150°C | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | SINGLE | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 2.5 μs | Standard | 15kV | 50mA | 0.05A | 15000V | 1μA @ 15000V | 20V @ 100mA | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-88HFR20 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 180°C | -65°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs85hf60-datasheets-0683.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | EAR99 | No | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | Single | 1 | O-MUPM-D1 | 85A | 1.8kA | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 9mA | 200V | 1.8kA | 200V | Standard, Reverse Polarity | 200V | 85A | 1 | 1.2V @ 267A | -65°C~180°C | |||||||||||||||||||||||||||||||||||||||||||||||||
| VS-42HFR160 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 160°C | -65°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs40hf160-datasheets-1856.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | EAR99 | unknown | 8541.10.00.80 | UPPER | HIGH CURRENT CABLE | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | O-MUPM-H1 | 595A | ANODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 4.5mA | 1.6kV | Standard, Reverse Polarity | 1.6kV | 40A | 1 | 1600V | 1.5V @ 125A | -65°C~160°C | ||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-87HFR80 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 180°C | -65°C | ROHS3 Compliant | 2017 | /files/vishaysemiconductordiodesdivision-vs85hf60-datasheets-0683.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | 2 | EAR99 | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 1.2V | 1.8kA | ANODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 9mA | 1.8kA | 800V | Standard, Reverse Polarity | 800V | 85A | 1800A | 1 | 1.2V @ 267A | -65°C~180°C | ||||||||||||||||||||||||||||||||||||||||||||||
| VS-87HF80 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 180°C | -65°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs85hf60-datasheets-0683.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | EAR99 | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 1.8kA | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 9mA | 800V | Standard | 400V | 85A | 1800A | 1 | 1.2V @ 267A | -65°C~180°C | |||||||||||||||||||||||||||||||||||||||||||||||||
| SDH10KM | Semtech Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | Non-RoHS Compliant | 2016 | Module | 2 | 18 Weeks | EAR99 | unknown | 8541.10.00.80 | UPPER | SOLDER LUG | SDH1 | 150°C | 1 | Rectifier Diodes | Not Qualified | R-XUFM-D2 | SINGLE | CATHODE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 2 μs | Standard | 10kV | 1A | 50A | 1A | 10000V | 1μA @ 10000V | 13.2V @ 1A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SICR20650WTTB | SMC Diode Solutions |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Not Applicable | ROHS3 Compliant | TO-247-3 | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 650pF @ 0V 1MHz | 650V | 150μA @ 650V | 1.7V @ 10A | 10A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CDLL5819E3 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Bulk | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-cdll5819-datasheets-8782.pdf | DO-213AB, MELF (Glass) | 10 Weeks | DO-213AB | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 70pF @ 5V 1MHz | 45V | 50μA @ 45V | 490mV @ 1A | 1A | -65°C~125°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JAN1N5553 | Microsemi Corporation | $9.05 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/420 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n5554-datasheets-7989.pdf | B, Axial | 2 | 8 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | WIRE | 2 | Single | 1 | Qualified | 5A | 1.3V | ISOLATED | POWER | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1μA | 800V | 100A | 2 μs | Standard | 800V | 3A | 1 | 5A | 1μA @ 800V | 1.3V @ 9A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||
| FR6DR05 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | DO-203AA, DO-4, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 6 months ago) | yes | EAR99 | 8541.10.00.80 | UPPER | SOLDER LUG | 150°C | 1 | O-MUPM-D1 | 6A | 135A | SINGLE | ANODE | 2.5 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 25μA | 200V | 200V | 500 ns | 500 ns | Standard, Reverse Polarity | 200V | 16A | 1 | 25μA @ 50V | 1.4V @ 6A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IDW24G65C5BXKSA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolSiC™+ | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | /files/infineontechnologies-idw24g65c5bxksa1-datasheets-4489.pdf | TO-247-3 | 3 | 18 Weeks | yes | EAR99 | PD-CASE | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 175°C | NOT SPECIFIED | 2 | R-PSFM-T3 | COMMON CATHODE, 2 ELEMENTS | CATHODE | EFFICIENCY | No Recovery Time > 500mA (Io) | 152W | 650V | 190μA | 0ns | Silicon Carbide Schottky | 56A | 1 | 360pF @ 1V 1MHz | 650V | 190μA @ 650V | 1.7V @ 12A | 12A DC | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||
| VS-87HFR60 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 180°C | -65°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs85hf60-datasheets-0683.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | EAR99 | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 1.8kA | ANODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 9mA | 600V | Standard, Reverse Polarity | 600V | 85A | 1800A | 1 | 1.2V @ 267A | -65°C~180°C | |||||||||||||||||||||||||||||||||||||||||||||||||
| VS-60EPF06PBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2012 | /files/vishaysemiconductordiodesdivision-vs60epf04pbf-datasheets-5728.pdf&product=vishaysemiconductordiodesdivision-vs60epf06pbf-6006373 | TO-247-2 | 15.9mm | 20.3mm | 5.3mm | 2 | 8 Weeks | Unknown | 2 | EAR99 | FREE WHEELING DIODE | Tin | No | 8541.10.00.80 | e3 | 2 | Single | 1 | Rectifier Diodes | 60A | 1.3V | 830A | CATHODE | FAST SOFT RECOVERY | 0.2 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 830A | 100μA | 600V | 830A | 600V | 180 ns | 180 ns | Standard | 600V | 60A | 1 | 100μA @ 600V | 1.3V @ 60A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||
| JANTX1N6761UR-1 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/586 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 125°C | -55°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-cdll5819-datasheets-8782.pdf | DO-213AB, MELF (Glass) | 2 | 14 Weeks | 2 | IN PRODUCTION (Last Updated: 3 weeks ago) | no | EAR99 | METALLURGICALLY BONDED | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/586F | END | WRAP AROUND | 2 | Single | 1 | Qualified | 1A | 690mV | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 100V | Schottky | 1A | 100μA @ 100V | 380mV @ 100mA | -65°C~125°C | |||||||||||||||||||||||||||||||||||||||||||||
| FR6BR05 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 75°C | 0°C | RoHS Compliant | DO-203AA, DO-4, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 6 months ago) | yes | 36 | Straight | UPPER | SOLDER LUG | 1 | O-MUPM-D1 | 3.96mm | 6A | 135A | SINGLE | ANODE | 2.5 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 25μA | 100V | 100V | 500 ns | 500 ns | Standard, Reverse Polarity | 100V | 16A | 1 | 25μA @ 50V | 1.4V @ 6A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||
| JANTXV1N4245 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/286 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jantx1n4248-datasheets-8351.pdf | A, Axial | 2 | 14 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | HIGH RELIABILITY | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500 | WIRE | 2 | Single | 1 | Qualified | 1.3V | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1μA | 200V | 25A | 5 μs | Standard | 200V | 1A | 1A | 1μA @ 200V | 1.3V @ 3A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||
| D251N18BXPSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Stud | Stud Mount | Bulk | Not Applicable | 180°C | -40°C | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/infineontechnologies-d251n18bxpsa1-datasheets-8923.pdf | DO-205AA, DO-8, Stud | Lead Free | 14 Weeks | 2 | Halogen Free | NOT SPECIFIED | Single | NOT SPECIFIED | 255A | 6.3kA | Standard Recovery >500ns, > 200mA (Io) | 5.3kA | 30mA | 1.8kV | 6.3kA | 1.8kV | Standard | 1800V | 30mA @ 1800V | -40°C~180°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FR6AR05 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | DO-203AA, DO-4, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 6 months ago) | yes | UPPER | SOLDER LUG | 150°C | 1 | O-MUPM-D1 | 6A | 135A | SINGLE | ANODE | 2.5 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 25μA | 50V | 50V | 500 ns | 500 ns | Standard, Reverse Polarity | 50V | 16A | 1 | 25μA @ 50V | 1.4V @ 6A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N2133AR | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-1n2133ar-datasheets-0832.pdf | DO-203AB, DO-5, Stud | 1 | 6 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | UPPER | SOLDER LUG | 1N2133AR | 200°C | 1 | O-MUPM-D1 | 60A | 1.05kA | SINGLE | ANODE | GENERAL PURPOSE | 0.65 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 300V | 300V | Standard, Reverse Polarity | 300V | 60A | 1 | 10μA @ 50V | 1.1V @ 60A | -65°C~200°C | |||||||||||||||||||||||||||||||||||||||||||||||||||
| R7014203XXUA | Powerex Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/powerexinc-r7010404xxua-datasheets-8082.pdf | DO-200AA, A-PUK | 12 Weeks | DO-200AA, R62 | Standard Recovery >500ns, > 200mA (Io) | 9 μs | Standard, Reverse Polarity | 4.2kV | 300A | 4200V | 50mA @ 4200V | 2.15V @ 1500A | 300A | -65°C~200°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTXV1N7043CAT1 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SCHOTTKY | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n7043cat1-datasheets-8281.pdf | 3 | 8 Weeks | EAR99 | HIGH RELIABILITY, LOW POWER LOSS | 8541.10.00.80 | MIL-19500/730 | NO | SINGLE | PIN/PEG | 3 | 150°C | 2 | Rectifier Diodes | Qualified | S-XSFM-P3 | COMMON ANODE, 2 ELEMENTS | ISOLATED | EFFICIENCY | SILICON | 100V | TO-254AA | 0.95V | RECTIFIER DIODE | 175A | 1 | 35A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FR16KR05 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | DO-203AA, DO-4, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | EAR99 | 8541.10.00.80 | UPPER | SOLDER LUG | 150°C | 1 | O-MUPM-D1 | 16A | 225A | SINGLE | ANODE | 1.5 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 25μA | 800V | 800V | 500 ns | 500 ns | Standard, Reverse Polarity | 800V | 16A | 1 | 25μA @ 100V | 1.1V @ 16A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||
| LS412460 | Powerex Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/powerexinc-ls410860-datasheets-6086.pdf | POW-R-BLOK™ Module | 2 | 20 Weeks | Unknown | yes | EAR99 | UL RECOGNIZED | 8541.10.00.80 | UPPER | UNSPECIFIED | NOT SPECIFIED | 2 | 150°C | -40°C | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | R-XUFM-X2 | 600A | 1.18V | ISOLATED | POWER | Standard Recovery >500ns, > 200mA (Io) | SILICON | 2.4kV | Standard | 2.4kV | 600A | 1 | 2400V | 40mA @ 2400V | 1.19V @ 1800A | |||||||||||||||||||||||||||||||||||||||||||||
| VS-40HFLR40S05 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 125°C | -40°C | ROHS3 Compliant | 2017 | /files/vishaysemiconductordiodesdivision-vs85hfl60s05-datasheets-4835.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | EAR99 | FREE WHEELING DIODE | unknown | 8541.10.00.80 | UPPER | SOLDER LUG | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 420A | ANODE | 0.25 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 400V | 500 ns | 500 ns | Standard, Reverse Polarity | 400V | 40A | 500A | 1 | 100μA @ 400V | 1.95V @ 40A | -40°C~125°C | ||||||||||||||||||||||||||||||||||||||||||||||
| FR20D02 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Cable, Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 105°C | -40°C | RoHS Compliant | DO-203AB, DO-5, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | 4 | Straight | UPPER | SOLDER LUG | 1 | O-MUPM-D1 | 5.08mm | 20A | 250A | SINGLE | CATHODE | 0.6 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 25μA | 200V | 200V | 200 ns | 200 ns | Standard | 200V | 20A | 1 | 25μA @ 50V | 1V @ 20A | -40°C~125°C | ||||||||||||||||||||||||||||||||||||||||||||||||
| VS-87HF60 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 180°C | -65°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs85hf60-datasheets-0683.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | EAR99 | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 1.8kA | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 9mA | 600V | Standard | 600V | 85A | 1800A | 1 | 1.2V @ 267A | -65°C~180°C | |||||||||||||||||||||||||||||||||||||||||||||||||
| FR16GR05 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | DO-203AA, DO-4, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | UPPER | SOLDER LUG | 150°C | 1 | O-MUPM-D1 | 16A | 225A | SINGLE | ANODE | 1.5 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 25μA | 400V | 400V | 500 ns | 500 ns | Standard, Reverse Polarity | 400V | 16A | 1 | 25μA @ 100V | 1.1V @ 16A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| R9G00622XX | Powerex Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/powerexinc-r9g00222xx-datasheets-8636.pdf | DO-200AB, B-PUK | 2 | 12 Weeks | 2 | EAR99 | FREE WHEELING DIODE | unknown | 8541.10.00.80 | END | NO LEAD | 150°C | -40°C | 1 | Rectifier Diodes | SINGLE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 150000μA | 15 μs | Standard | 600V | 2.2kA | 30000A | 1 | 3400A | 150mA @ 600V | 1.1V @ 1500A | 2200A | ||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N4249 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/286 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | /files/microsemicorporation-jantx1n4248-datasheets-8351.pdf | A, Axial | Contains Lead | 2 | 8 Weeks | 2 | IN PRODUCTION (Last Updated: 2 weeks ago) | no | EAR99 | HIGH RELIABILITY | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500 | WIRE | 2 | Single | 1 | Qualified | 1.3V | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1μA | 1kV | 25A | 5 μs | Standard | 1kV | 1A | 1A | 1000V | 1μA @ 1000V | 1.3V @ 3A | -65°C~175°C |
