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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Current Rating | Package / Case | Number of Terminations | Factory Lead Time | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Configuration | Case Connection | Application | Speed | Diode Element Material | Power Dissipation-Max | Rep Pk Reverse Voltage-Max | Breakdown Voltage-Min | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | JEDEC-95 Code | Reverse Test Voltage | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SBRD8360RLG-VF01 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 8 Weeks | yes | FREE WHEELING DIODE | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | R-PSSO-G2 | SINGLE | CATHODE | FAST RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 60V | 200μA | Schottky | 75A | 1 | 3A | 60V | 200μA @ 60V | 600mV @ 3A | 3A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||
| HERA806G C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | /files/taiwansemiconductorcorporation-hera808gc0g-datasheets-2590.pdf | TO-220-2 | 10 Weeks | TO-220AC | Fast Recovery =< 500ns, > 200mA (Io) | 80ns | Standard | 55pF @ 4V 1MHz | 600V | 10μA @ 600V | 1.7V @ 8A | 8A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VBT1080S-E3/4W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vft1080se34w-datasheets-2674.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 22 Weeks | 3 | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | R-PSSO-G2 | 10A | 100A | 20μA | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 600μA | 80V | 100A | Schottky | 80V | 10A | 1 | 600μA @ 80V | 810mV @ 10A | -55°C~150°C | ||||||||||||||||||||||||||||||||
| UPS5819/TR13 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-ups5817tr7-datasheets-2647.pdf | DO-216AA | 1 | 19 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | No | DUAL | GULL WING | UPS5819 | 2 | Single | 1 | Rectifier Diodes | S-PDSO-G1 | 1A | Fast Recovery =< 500ns, > 200mA (Io) | 1mA | 40V | 50A | Schottky | 40V | 1A | 1A | 1mA @ 40V | 550mV @ 1A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||
| BYT62-TR | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-byt62tap-datasheets-0568.pdf | 350A | SOD-57, Axial | 2 | 12 Weeks | 2 | yes | EAR99 | Silver, Tin | No | 8541.10.00.70 | e2 | Tin/Silver (Sn/Ag) | WIRE | 2 | Single | 1 | Rectifier Diodes | 350mA | 3.6V | 10A | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 2.4kV | 10A | 2.4kV | 5 μs | 5 μs | Avalanche | 2.4kV | 350mA | 0.35A | 2400V | 5μA @ 2400V | 3.6V @ 1A | 175°C Max | |||||||||||||||||||||||||||||||
| BYV28-100-TR | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2005 | /files/vishaysemiconductordiodesdivision-byv28200tr-datasheets-5476.pdf | 3.5A | SOD-64, Axial | 2 | 17 Weeks | 2 | yes | EAR99 | METALLURGICALLY BONDED | unknown | 8541.10.00.80 | e2 | Tin/Silver (Sn/Ag) | NO | WIRE | NOT SPECIFIED | 2 | 175°C | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | 1.1V | SINGLE | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100V | 30ns | Avalanche | 90A | 1 | 100V | 1μA @ 100V | 1.1V @ 5A | -55°C~175°C | |||||||||||||||||||||||||||||||||||
| MBR10150 C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | SCHOTTKY | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-mbr1060c0g-datasheets-6211.pdf | TO-220-2 | 2 | 10 Weeks | EAR99 | LOW POWER LOSS | 8541.10.00.80 | NO | SINGLE | 150°C | 1 | Rectifier Diodes | R-PSFM-T2 | SINGLE | CATHODE | EFFICIENCY | Standard Recovery >500ns, > 200mA (Io) | SILICON | 150V | 100μA | TO-220AC | Standard | 150A | 1 | 10A | 150V | 100μA @ 150V | 1.05V @ 10A | 10A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||
| SS12P2LHM3_A/H | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | /files/vishaysemiconductordiodesdivision-ss12p3lm386a-datasheets-6565.pdf | TO-277, 3-PowerDFN | 3 | 10 Weeks | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | R-PDSO-F3 | SINGLE | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1000μA | TO-277A | Schottky | 20V | 12A | 280A | 1 | 930pF @ 4V 1MHz | 20V | 1000μA @ 20V | 560mV @ 12A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||
| CMR3U-04M BK PBFREE | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Bulk | 1 (Unlimited) | https://pdf.utmel.com/r/datasheets/centralsemiconductorcorp-cmr3u10mtr13pbfree-datasheets-7171.pdf | DO-214AA, SMB | 26 Weeks | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | Standard | 400V | 5μA @ 400V | 1.25V @ 3A | 3A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SFAF806G C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-sfaf806gc0g-datasheets-7989.pdf | TO-220-2 Full Pack | 10 Weeks | ITO-220AC | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | Standard | 60pF @ 4V 1MHz | 400V | 10μA @ 400V | 1.3V @ 8A | 8A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SFAF805G C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | /files/taiwansemiconductorcorporation-sfaf806gc0g-datasheets-7989.pdf | TO-220-2 Full Pack | 10 Weeks | ITO-220AC | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | Standard | 60pF @ 4V 1MHz | 300V | 10μA @ 300V | 1.3V @ 8A | 8A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HERA801G C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-hera808gc0g-datasheets-2590.pdf | TO-220-2 | 10 Weeks | TO-220AC | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | Standard | 65pF @ 4V 1MHz | 50V | 10μA @ 50V | 1V @ 8A | 8A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PMEG045T150EPDAZ | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/nexperiausainc-pmeg045t150epdz-datasheets-6631.pdf | TO-277, 3-PowerDFN | 3 | 4 Weeks | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | AEC-Q101; IEC-60134 | DUAL | FLAT | 3 | 175°C | 1 | R-PDSO-F3 | SINGLE | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1.66W | 100μA | 20 ns | Schottky | 45V | 15A | 210A | 1 | 800pF @ 10V 1MHz | 45V | 100μA @ 45V | 550mV @ 15A | 175°C Max | |||||||||||||||||||||||||||||||||||||||||
| HERA805G C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-hera808gc0g-datasheets-2590.pdf | TO-220-2 | 10 Weeks | TO-220AC | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | Standard | 65pF @ 4V 1MHz | 400V | 10μA @ 400V | 1.3V @ 8A | 8A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AU2PJHM3_A/I | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, eSMP® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-au2pjm386a-datasheets-2058.pdf | TO-277, 3-PowerDFN | 3 | 10 Weeks | 3 | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | Tin | unknown | 8541.10.00.80 | e3 | DUAL | FLAT | NOT SPECIFIED | Common Anode | NOT SPECIFIED | 1 | 2A | CATHODE | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 600V | 30A | TO-277A | 75 ns | Avalanche | 600V | 1.6A | 1 | 42pF @ 4V 1MHz | 10μA @ 600V | 1.9V @ 2A | -55°C~175°C | |||||||||||||||||||||||||||||||||
| HERA807G C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-hera808gc0g-datasheets-2590.pdf | TO-220-2 | 10 Weeks | TO-220AC | Fast Recovery =< 500ns, > 200mA (Io) | 80ns | Standard | 55pF @ 4V 1MHz | 800V | 10μA @ 800V | 1.7V @ 8A | 8A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SK12H60 A0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-sk12h60a0g-datasheets-8013.pdf | DO-201AD, Axial | 9 Weeks | DO-201AD | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 60V | 120μA @ 60V | 700mV @ 12A | 12A | 200°C Max | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HER606G R0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-her602ga0g-datasheets-7136.pdf | R6, Axial | 2 | 10 Weeks | EAR99 | HIGH RELIABILITY | 8541.10.00.80 | e3 | MATTE TIN | NO | WIRE | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | O-PALF-W2 | SINGLE | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 600V | 10μA | 75ns | Standard | 150A | 1 | 6A | 65pF @ 4V 1MHz | 600V | 10μA @ 600V | 1.7V @ 6A | 6A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||
| V15P15HM3/H | Vishay Semiconductor Diodes Division | $0.80 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, eSMP®, TMBS® | Surface Mount | Tape & Reel (TR) | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-v15p15m3i-datasheets-9731.pdf | TO-277, 3-PowerDFN | 10 Weeks | TO-277A (SMPC) | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 150V | 300μA @ 150V | 1.08V @ 15A | 15A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SE12DDHM3/I | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, eSMP® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-se12djm3i-datasheets-1818.pdf | TO-263-3, D2Pak (2 Leads + Tab) Variant | 2 | 14 Weeks | EAR99 | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | R-PSSO-G2 | SINGLE | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 20μA | TO-263AC | 3 μs | Standard | 200V | 3.2A | 125A | 1 | 90pF @ 4V 1MHz | 200V | 20μA @ 200V | 1.15V @ 12A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||
| AU2PGHM3_A/I | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, eSMP® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-au2pjm386a-datasheets-2058.pdf | TO-277, 3-PowerDFN | 3 | 10 Weeks | 3 | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | Tin | unknown | 8541.10.00.80 | e3 | DUAL | FLAT | NOT SPECIFIED | Common Anode | NOT SPECIFIED | 1 | 2A | CATHODE | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 400V | 30A | TO-277A | 75 ns | Avalanche | 400V | 1.6A | 1 | 42pF @ 4V 1MHz | 10μA @ 400V | 1.9V @ 2A | -55°C~175°C | |||||||||||||||||||||||||||||||||
| SRA1040HC0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-sra10100c0g-datasheets-2578.pdf | TO-220-2 | 10 Weeks | TO-220AC | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 40V | 500μA @ 40V | 550mV @ 10A | 10A | -55°C~125°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| V15P15HM3/I | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, eSMP®, TMBS® | Surface Mount | Tape & Reel (TR) | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-v15p15m3i-datasheets-9731.pdf | TO-277, 3-PowerDFN | 10 Weeks | TO-277A (SMPC) | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 150V | 300μA @ 150V | 1.08V @ 15A | 15A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AU2PMHM3_A/I | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, eSMP® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-au2pmm386a-datasheets-0184.pdf | TO-277, 3-PowerDFN | 3 | 28 Weeks | 3 | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | Tin | unknown | 8541.10.00.80 | e3 | DUAL | FLAT | NOT SPECIFIED | Common Anode | NOT SPECIFIED | 1 | 2A | CATHODE | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 1kV | 30A | TO-277A | 75 ns | Avalanche | 1kV | 1.3A | 1 | 2A | 29pF @ 4V 1MHz | 1000V | 10μA @ 1000V | 2.5V @ 2A | -55°C~175°C | |||||||||||||||||||||||||||||||
| AR3PKHM3_A/I | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, eSMP® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ar3pmm386a-datasheets-4797.pdf | TO-277, 3-PowerDFN | 3 | 10 Weeks | 3 | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | Tin | unknown | 8541.10.00.80 | e3 | DUAL | FLAT | NOT SPECIFIED | Common Anode | NOT SPECIFIED | 1 | 3A | CATHODE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 800V | 50A | TO-277A | 120 ns | Avalanche | 800V | 1.6A | 1 | 34pF @ 4V 1MHz | 10μA @ 800V | 1.9V @ 3A | -55°C~175°C | ||||||||||||||||||||||||||||||||||
| UGF8J C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-ugf8jhc0g-datasheets-2763.pdf | TO-220-2 Full Pack | 16 Weeks | ITO-220AC | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | Standard | 600V | 30μA @ 600V | 2.9V @ 8A | 8A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SR1040HC0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-sr10150c0g-datasheets-5651.pdf | TO-220-3 | 10 Weeks | TO-220AB | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 40V | 500μA @ 40V | 550mV @ 5A | 10A | -55°C~125°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| V25PN60-M3/87A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eSMP®, TMBS® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-v25pn60m386a-datasheets-0622.pdf | TO-277, 3-PowerDFN | 3 | 10 Weeks | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | R-PDSO-F3 | SINGLE | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 6000μA | TO-277A | Schottky | 60V | 6.4A | 300A | 1 | 60V | 6mA @ 60V | 590mV @ 25A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||
| SBRT10U60D1Q-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, SBR® | Surface Mount | Tape & Reel (TR) | ROHS3 Compliant | /files/diodesincorporated-sbrt10u60d1q13-datasheets-7941.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 23 Weeks | EAR99 | not_compliant | 8541.10.00.80 | YES | SINGLE | GULL WING | 150°C | 1 | R-PSSO-G2 | SINGLE | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 60V | 60V | 400μA | 60V | Super Barrier | 140A | 1 | 10A | 60V | 400μA @ 60V | 520mV @ 10A | 10A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||
| MBR10100HC0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-mbr1060c0g-datasheets-6211.pdf | TO-220-2 | 10 Weeks | TO-220AC | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 100V | 100μA @ 100V | 850mV @ 10A | 10A | -55°C~150°C |
