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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | RoHS Status | Published | Datasheet | Current Rating | Package / Case | Number of Terminations | Factory Lead Time | Number of Pins | ECCN Code | Additional Feature | Contact Plating | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Forward Current | Forward Voltage | Max Surge Current | Configuration | Case Connection | Application | Speed | Diode Element Material | Rep Pk Reverse Voltage-Max | Breakdown Voltage-Min | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | JEDEC-95 Code | Reverse Test Voltage | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| UGF8J C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-ugf8jhc0g-datasheets-2763.pdf | TO-220-2 Full Pack | 16 Weeks | ITO-220AC | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | Standard | 600V | 30μA @ 600V | 2.9V @ 8A | 8A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SR1040HC0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-sr10150c0g-datasheets-5651.pdf | TO-220-3 | 10 Weeks | TO-220AB | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 40V | 500μA @ 40V | 550mV @ 5A | 10A | -55°C~125°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| V25PN60-M3/87A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eSMP®, TMBS® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-v25pn60m386a-datasheets-0622.pdf | TO-277, 3-PowerDFN | 3 | 10 Weeks | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | R-PDSO-F3 | SINGLE | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 6000μA | TO-277A | Schottky | 60V | 6.4A | 300A | 1 | 60V | 6mA @ 60V | 590mV @ 25A | -40°C~150°C | |||||||||||||||||||||||||||||
| SBRT10U60D1Q-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, SBR® | Surface Mount | Tape & Reel (TR) | ROHS3 Compliant | /files/diodesincorporated-sbrt10u60d1q13-datasheets-7941.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 23 Weeks | EAR99 | not_compliant | 8541.10.00.80 | YES | SINGLE | GULL WING | 150°C | 1 | R-PSSO-G2 | SINGLE | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 60V | 60V | 400μA | 60V | Super Barrier | 140A | 1 | 10A | 60V | 400μA @ 60V | 520mV @ 10A | 10A | -55°C~150°C | ||||||||||||||||||||||||||||||||||
| MBR10100HC0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-mbr1060c0g-datasheets-6211.pdf | TO-220-2 | 10 Weeks | TO-220AC | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 100V | 100μA @ 100V | 850mV @ 10A | 10A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| V15P45HM3_A/H | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, eSMP®, TMBS® | Surface Mount | Tape & Reel (TR) | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-v15p45m386a-datasheets-6773.pdf | TO-277, 3-PowerDFN | 10 Weeks | TO-277A (SMPC) | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 45V | 1.5mA @ 45V | 580mV @ 15A | 15A DC | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SRA1060 C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-sra10100c0g-datasheets-2578.pdf | TO-220-2 | 10 Weeks | TO-220AC | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 60V | 500μA @ 60V | 700mV @ 10A | 10A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SR1040 C0G | Taiwan Semiconductor Corporation | $0.25 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-sr10150c0g-datasheets-5651.pdf | TO-220-3 | 10 Weeks | TO-220AB | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 40V | 500μA @ 40V | 550mV @ 5A | 10A | -55°C~125°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| SE12DD-M3/I | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, eSMP® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | /files/vishaysemiconductordiodesdivision-se12djm3i-datasheets-1818.pdf | TO-263-3, D2Pak (2 Leads + Tab) Variant | 2 | 14 Weeks | EAR99 | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | R-PSSO-G2 | SINGLE | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 20μA | TO-263AC | 3 μs | Standard | 400V | 3.2A | 125A | 1 | 90pF @ 4V 1MHz | 200V | 20μA @ 200V | 1.15V @ 12A | -55°C~175°C | ||||||||||||||||||||||||||||
| SK85C R7G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | DO-214AB, SMC | DO-214AB (SMC) | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 50V | 500μA @ 50V | 750mV @ 8A | 8A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EGP51F-E3/C | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Tape & Reel (TR) | Not Applicable | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-egp51ge3c-datasheets-0423.pdf | DO-201AD, Axial | 22 Weeks | DO-201AD | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | Standard | 48pF @ 4V 1MHz | 300V | 5μA @ 300V | 1.25V @ 5A | 5A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| EGP51F-E3/D | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Tape & Box (TB) | Not Applicable | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-egp51ge3c-datasheets-0423.pdf | DO-201AD, Axial | 22 Weeks | DO-201AD | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | Standard | 48pF @ 4V 1MHz | 300V | 5μA @ 300V | 1.25V @ 5A | 5A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| EGP31B-E3/D | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Tape & Box (TB) | Not Applicable | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-egp51ge3c-datasheets-0423.pdf | DO-201AD, Axial | 22 Weeks | DO-201AD | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | Standard | 117pF @ 4V 1MHz | 100V | 1μA @ 100V | 950mV @ 3A | 3A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-8EWH02FNTRR-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRED Pt® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2015 | /files/vishaysemiconductordiodesdivision-vs8ewh02fnm3-datasheets-9975.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 14 Weeks | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | unknown | 8541.10.00.80 | SINGLE | GULL WING | NOT SPECIFIED | 3 | 175°C | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | R-PSSO-G2 | SINGLE | CATHODE | HYPERFAST SOFT RECOVERY HIGH POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | TO-252AA | 24 ns | Standard | 200V | 8A | 140A | 1 | 8A | 200V | 5μA @ 200V | 970mV @ 8A | -65°C~175°C | |||||||||||||||||||||||||||
| EGP31C-E3/C | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Tape & Reel (TR) | Not Applicable | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-egp51ge3c-datasheets-0423.pdf | DO-201AD, Axial | 22 Weeks | DO-201AD | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | Standard | 117pF @ 4V 1MHz | 150V | 1μA @ 150V | 950mV @ 3A | 3A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||
| EGP51A-E3/C | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Tape & Reel (TR) | Not Applicable | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-egp51ge3c-datasheets-0423.pdf | DO-201AD, Axial | 22 Weeks | DO-201AD | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | Standard | 117pF @ 4V 1MHz | 50V | 5μA @ 50V | 960mV @ 5A | 5A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| V20PL60-M3/87A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eSMP®, TMBS® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-v20pl60m386a-datasheets-0626.pdf | TO-277, 3-PowerDFN | 3 | 10 Weeks | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | R-PDSO-F3 | SINGLE | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 4000μA | TO-277A | Schottky | 60V | 5.5A | 240A | 1 | 60V | 4mA @ 60V | 590mV @ 20A | -40°C~150°C | |||||||||||||||||||||||||||||
| GPAS1005 MNG | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-gpas1005mng-datasheets-7873.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 11 Weeks | TO-263AB (D2PAK) | Standard Recovery >500ns, > 200mA (Io) | Standard | 50pF @ 4V 1MHz | 600V | 5μA @ 600V | 1.1V @ 10A | 10A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| AR3PDHM3_A/I | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, eSMP® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ar3pdm386a-datasheets-5460.pdf | TO-277, 3-PowerDFN | 3 | 10 Weeks | 3 | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | Tin | unknown | 8541.10.00.80 | e3 | DUAL | FLAT | NOT SPECIFIED | Common Anode | NOT SPECIFIED | 1 | 3A | CATHODE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 200V | 50A | TO-277A | 140 ns | Avalanche | 200V | 1.8A | 1 | 44pF @ 4V 1MHz | 10μA @ 200V | 1.6V @ 3A | -55°C~175°C | ||||||||||||||||||||||||||
| EGP51D-E3/C | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Tape & Reel (TR) | Not Applicable | RoHS Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-egp51ge3c-datasheets-0423.pdf | DO-201AD, Axial | 2 | 22 Weeks | FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT | e3 | Matte Tin (Sn) | NO | WIRE | 175°C | 1 | O-PALF-W2 | SINGLE | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 200V | 5μA | 50ns | Standard | 150A | 1 | 5A | 117pF @ 4V 1MHz | 200V | 5μA @ 200V | 960mV @ 5A | 5A | -65°C~175°C | ||||||||||||||||||||||||||||||||||
| AR3PGHM3_A/I | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, eSMP® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ar3pdm386a-datasheets-5460.pdf | TO-277, 3-PowerDFN | 3 | 10 Weeks | 3 | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | Tin | unknown | 8541.10.00.80 | e3 | DUAL | FLAT | NOT SPECIFIED | Common Anode | NOT SPECIFIED | 1 | 3A | CATHODE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 400V | 50A | TO-277A | 140 ns | Avalanche | 400V | 1.8A | 1 | 44pF @ 4V 1MHz | 10μA @ 200V | 1.6V @ 3A | -55°C~175°C | ||||||||||||||||||||||||||
| EGP51C-E3/D | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Tape & Box (TB) | Not Applicable | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-egp51ge3c-datasheets-0423.pdf | DO-201AD, Axial | 22 Weeks | DO-201AD | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | Standard | 117pF @ 4V 1MHz | 150V | 5μA @ 150V | 960mV @ 5A | 5A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| EGP31F-E3/C | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Tape & Reel (TR) | Not Applicable | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-egp51ge3c-datasheets-0423.pdf | DO-201AD, Axial | 22 Weeks | DO-201AD | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | Standard | 48pF @ 4V 1MHz | 300V | 3μA @ 300V | 1.25V @ 3A | 3A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||
| EGP51G-E3/D | Vishay Semiconductor Diodes Division | $1.80 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Tape & Box (TB) | Not Applicable | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-egp51ge3c-datasheets-0423.pdf | DO-201AD, Axial | 22 Weeks | DO-201AD | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | Standard | 48pF @ 4V 1MHz | 400V | 5μA @ 400V | 1.25V @ 5A | 5A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||
| SE12DB-M3/I | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, eSMP® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | /files/vishaysemiconductordiodesdivision-se12djm3i-datasheets-1818.pdf | TO-263-3, D2Pak (2 Leads + Tab) Variant | 2 | 14 Weeks | EAR99 | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | R-PSSO-G2 | SINGLE | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 20μA | TO-263AC | 3 μs | Standard | 100V | 3.2A | 125A | 1 | 90pF @ 4V 1MHz | 100V | 20μA @ 100V | 1.15V @ 12A | -55°C~175°C | ||||||||||||||||||||||||||||
| AU2PKHM3_A/I | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, eSMP® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-au2pmm386a-datasheets-0184.pdf | TO-277, 3-PowerDFN | 3 | 28 Weeks | 3 | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | Tin | unknown | 8541.10.00.80 | e3 | DUAL | FLAT | NOT SPECIFIED | Common Anode | NOT SPECIFIED | 1 | 2A | CATHODE | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 800V | 30A | TO-277A | 75 ns | Avalanche | 800V | 1.3A | 1 | 2A | 29pF @ 4V 1MHz | 10μA @ 800V | 2.5V @ 2A | -55°C~175°C | ||||||||||||||||||||||||
| V25PL60-M3/87A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eSMP®, TMBS® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-v25pl60m386a-datasheets-3229.pdf | TO-277, 3-PowerDFN | 3 | 10 Weeks | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | R-PDSO-F3 | SINGLE | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 4000μA | TO-277A | Schottky | 60V | 5.5A | 240A | 1 | 60V | 4mA @ 60V | 630mV @ 25A | -40°C~150°C | |||||||||||||||||||||||||||||
| SF1008G C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | /files/taiwansemiconductorcorporation-sf1006gc0g-datasheets-1806.pdf | TO-220-3 | 10 Weeks | TO-220AB | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | Standard | 50pF @ 4V 1MHz | 600V | 10μA @ 600V | 1.7V @ 5A | 10A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| BYW75TR | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-byw76tap-datasheets-5932.pdf | 3A | SOD-64, Axial | 2 | 17 Weeks | EAR99 | 8541.10.00.80 | e2 | Tin/Silver (Sn96.5Ag3.5) | WIRE | 260 | 2 | Single | 30 | 1 | Rectifier Diodes | E-LALF-W2 | 3A | 1.1V | 100A | ISOLATED | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 500V | 100A | 500V | 200 ns | 200 ns | Avalanche | 500V | 3A | 1 | 3A | 5μA @ 500V | 1.1V @ 3A | -55°C~175°C | |||||||||||||||||||||||
| EGP31G-E3/D | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Tape & Box (TB) | Not Applicable | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-egp51ge3c-datasheets-0423.pdf | DO-201AD, Axial | 22 Weeks | DO-201AD | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | Standard | 48pF @ 4V 1MHz | 400V | 4μA @ 400V | 1.25V @ 3A | 3A | -65°C~175°C |
