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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Configuration | Case Connection | Application | Speed | Diode Element Material | Rep Pk Reverse Voltage-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | JEDEC-95 Code | Forward Voltage-Max | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Reverse Voltage (DC) | Reverse Recovery Time-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| V15P12HM3/I | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, eSMP®, TMBS® | Surface Mount | Tape & Reel (TR) | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-v15p12m3h-datasheets-9886.pdf | TO-277, 3-PowerDFN | 10 Weeks | TO-277A (SMPC) | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 120V | 1mA @ 120V | 810mV @ 15A | 15A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VT760-E3/4W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TMBS® | Through Hole | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2016 | /files/vishaysemiconductordiodesdivision-vbt760e34w-datasheets-9800.pdf | TO-220-2 | 2 | 10 Weeks | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | unknown | 8541.10.00.80 | SINGLE | NOT SPECIFIED | 3 | 150°C | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | R-PSFM-T2 | SINGLE | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | TO-220AC | Schottky | 60V | 7.5A | 100A | 1 | 60V | 700μA @ 60V | 800mV @ 7.5A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||
| EGP31A-E3/C | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Tape & Reel (TR) | Not Applicable | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-egp51ge3c-datasheets-0423.pdf | DO-201AD, Axial | 22 Weeks | DO-201AD | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | Standard | 117pF @ 4V 1MHz | 50V | 5μA @ 50V | 950mV @ 3A | 3A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-MBR735-M3 | Vishay Semiconductor Diodes Division | $0.77 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vsmbr745m3-datasheets-3409.pdf | TO-220-2 | 12 Weeks | TO-220AC | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 400pF @ 5V 1MHz | 35V | 100μA @ 35V | 840mV @ 15A | 7.5A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EGP31B-E3/C | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Tape & Reel (TR) | Not Applicable | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-egp51ge3c-datasheets-0423.pdf | DO-201AD, Axial | 22 Weeks | DO-201AD | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | Standard | 117pF @ 4V 1MHz | 100V | 1μA @ 100V | 950mV @ 3A | 3A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SR1204 A0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-sr1204ha0g-datasheets-2534.pdf | DO-201AD, Axial | 9 Weeks | DO-201AD | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 40V | 500μA @ 40V | 550mV @ 12A | 12A | -50°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SF5401-TR | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | AVALANCHE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-sf5408tr-datasheets-5371.pdf | 3A | SOD-64, Axial | 2 | 17 Weeks | yes | EAR99 | No | 8541.10.00.80 | e2 | Tin/Silver (Sn96.5Ag3.5) | WIRE | 260 | 2 | Single | 30 | 1 | Rectifier Diodes | E-LALF-W2 | 3A | 1.1V | 150A | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 100V | 150A | 100V | 50 ns | 50 ns | Standard | 100V | 3A | 1 | 3A | 5μA @ 100V | 1.1V @ 3A | -55°C~175°C | ||||||||||||||||||||||||||||||||||
| SF5406-TR | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | AVALANCHE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-sf5408tr-datasheets-5371.pdf | 3A | SOD-64, Axial | 2 | 17 Weeks | 2 | yes | EAR99 | No | 8541.10.00.80 | e2 | Tin/Silver (Sn96.5Ag3.5) | WIRE | 260 | 2 | Single | 30 | 1 | Rectifier Diodes | 3A | 1.7V | 150A | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 600V | 150A | 600V | 75 ns | 75 ns | Standard | 600V | 3A | 1 | 3A | 5μA @ 600V | 1.7V @ 3A | -55°C~175°C | ||||||||||||||||||||||||||||||||||
| TSN525M60HS4G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsn525m60s3g-datasheets-9254.pdf | 8-PowerTDFN | 16 Weeks | 8-PDFN (5x6) | Fast Recovery =< 500ns, > 200mA (Io) | Standard | 60V | 500μA @ 60V | 630mV @ 25A | 25A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-8EWH02FNTRL-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRED Pt® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs8ewh02fnm3-datasheets-9975.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 14 Weeks | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | unknown | 8541.10.00.80 | SINGLE | GULL WING | NOT SPECIFIED | 3 | 175°C | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | R-PSSO-G2 | SINGLE | CATHODE | HYPERFAST SOFT RECOVERY HIGH POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | TO-252AA | 24 ns | Standard | 200V | 8A | 140A | 1 | 8A | 200V | 5μA @ 200V | 970mV @ 8A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||
| VS-MURB820-1-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRED Pt® | Through Hole | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vsmurb820m3-datasheets-6963.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 14 Weeks | TO-262AA | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | Standard | 200V | 5μA @ 200V | 975mV @ 8A | 8A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AR4PK-M3/86A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eSMP® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2012 | /files/vishaysemiconductordiodesdivision-ar4pmhm3ai-datasheets-3408.pdf | TO-277, 3-PowerDFN | Lead Free | 3 | 10 Weeks | 3 | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | Tin | No | 8541.10.00.80 | DUAL | FLAT | AR4PK | 3 | Common Anode | 1 | Rectifier Diodes | 4A | 1.9V | 65A | CATHODE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 800V | 65A | 800V | TO-277A | 120 ns | 79 ns | Avalanche | 800V | 1.8A | 1 | 55pF @ 4V 1MHz | 10μA @ 800V | 1.9V @ 4A | 1.8A DC | -55°C~175°C | ||||||||||||||||||||||||||||||||||
| VS-6TQ035-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs6tq045m3-datasheets-3359.pdf | TO-220-2 | 12 Weeks | TO-220AC | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 400pF @ 5V 1MHz | 35V | 800μA @ 35V | 730mV @ 12A | 6A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RGP30K-E3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-rgp30me354-datasheets-9202.pdf | DO-201AD, Axial | 2 | 22 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | RGP30K | 2 | Single | 1 | Rectifier Diodes | 125A | 5μA | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 800V | 125A | 500 ns | 500 ns | Standard | 800V | 3A | 1 | 3A | 5μA @ 800V | 1.3V @ 3A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||
| SD072SC150A.T1 | SMC Diode Solutions |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 1 (Unlimited) | ROHS3 Compliant | Die | 6 Weeks | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 165pF @ 5V 1MHz | 150V | 150μA @ 150V | 890mV @ 5A | 5A | -55°C~200°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SBRT15U100SP5-7D | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchSBR | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2016 | /files/diodesincorporated-sbrt15u100sp513-datasheets-2189.pdf | PowerDI™ 5 | 3 | 24 Weeks | 95.991485mg | 5 | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | not_compliant | e3 | Matte Tin (Sn) | AEC-Q101 | DUAL | FLAT | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | R-PDSO-F3 | 640mV | CATHODE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 250A | 15mA | 100V | Super Barrier | 100V | 15A | 1 | 200μA @ 100V | 700mV @ 15A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||
| SMBT1587T1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | 2 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FES10G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | TO-277, 3-PowerDFN | 3 | 10 Weeks | 113.6mg | ACTIVE (Last Updated: 1 week ago) | yes | not_compliant | e3 | Tin (Sn) | AEC-Q101 | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-F3 | SINGLE | CATHODE | ULTRA FAST RECOVERY | SILICON | 150A | 400V | 5μA | 1.2V | RECTIFIER DIODE | 1 | 10A | 0.04μs | ||||||||||||||||||||||||||||||||||||||||||||||||
| UPS120E/TR13 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 125°C | -55°C | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-ups120e3tr7-datasheets-6685.pdf | DO-216AA | 1 | 19 Weeks | 2 | IN PRODUCTION (Last Updated: 2 weeks ago) | EAR99 | No | 8541.10.00.80 | GULL WING | UPS120 | Single | 1 | S-PSSO-G1 | 1A | CATHODE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 20V | 50A | Schottky | 20V | 1A | 1A | 80pF @ 5V 1MHz | 400μA @ 20V | 450mV @ 1A | -55°C~125°C | |||||||||||||||||||||||||||||||||||||||||||||||
| 10A06-T | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2006 | /files/diodesincorporated-10a05t-datasheets-4980.pdf | R6, Axial | 9.1mm | 9.1mm | 9.1mm | Lead Free | 2 | 12 Weeks | 2.099991g | 6 | no | EAR99 | Tin | not_compliant | 8541.10.00.80 | e3 | WIRE | 260 | 2 | Single | 40 | 1 | Rectifier Diodes | Not Qualified | O-PALF-W2 | 10A | 1V | 600A | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 800V | 600A | Standard | 800V | 10A | 1 | 800V | 80pF @ 4V 1MHz | 10μA @ 800V | 1V @ 10A | -65°C~150°C | |||||||||||||||||||||||||||||||
| NS8DT-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-ns8gte345-datasheets-6732.pdf | TO-220-2 | 2 | 10 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | 3 | Single | 1 | Rectifier Diodes | 8A | 1.1V | 125A | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 200V | 125A | 200V | Standard | 200V | 8A | 1 | 8A | 10μA @ 200V | 1.1V @ 8A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||
| NRVTS10120MFST1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2014 | /files/onsemiconductor-nts10120mfst1g-datasheets-6527.pdf | 8-PowerTDFN, 5 Leads | Lead Free | 5 | 5 Weeks | 8 | ACTIVE (Last Updated: 2 days ago) | yes | FREE WHEELING DIODE, LOW POWER LOSS | Tin | not_compliant | e3 | DUAL | FLAT | Common Cathode | 1 | Rectifier Diodes | R-PDSO-F5 | 10A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 120V | 200A | 55μA | Schottky | 120V | 10A | 1 | 30μA @ 120V | 820mV @ 10A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||
| UPS5817/TR13 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | Non-RoHS Compliant | 1997 | DO-216AA | 1 | 19 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | No | DUAL | GULL WING | UPS5817 | 2 | Single | 1 | Rectifier Diodes | S-PDSO-G1 | 1A | Fast Recovery =< 500ns, > 200mA (Io) | 1mA | 20V | 50A | Schottky | 20V | 1A | 1A | 1mA @ 20V | 450mV @ 1A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||
| SBRD8350T4G-VF01 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 8 Weeks | yes | FREE WHEELING DIODE | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | R-PSSO-G2 | SINGLE | CATHODE | FAST RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 50V | 200μA | Schottky | 75A | 1 | 3A | 50V | 200μA @ 50V | 600mV @ 3A | 3A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||
| EL02ZW | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/sanken-el02zv-datasheets-7057.pdf | Axial | 2 | 12 Weeks | EAR99 | 8541.10.00.80 | WIRE | 150°C | 1 | Not Qualified | O-PALF-W2 | SINGLE | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 40 ns | Standard | 200V | 1.5A | 25A | 1 | 200V | 50μA @ 200V | 980mV @ 1.5A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||
| UPS120/TR13 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 125°C | -55°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-ups120e3tr7-datasheets-6685.pdf | DO-216AA | 1 | 19 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | EAR99 | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | GULL WING | UPS120 | 2 | Single | 1 | Rectifier Diodes | S-PSSO-G1 | 1A | CATHODE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 400μA | 20V | 50A | Schottky | 20V | 1A | 1A | 80pF @ 5V 1MHz | 400μA @ 20V | 450mV @ 1A | -55°C~125°C | ||||||||||||||||||||||||||||||||||||||||||
| BYV98-200-TAP | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-byv98200tr-datasheets-9510.pdf | SOD-64, Axial | 2 | 17 Weeks | 2 | yes | EAR99 | Silver, Tin | unknown | 8541.10.00.80 | e2 | Tin/Silver (Sn/Ag) | WIRE | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | 4A | 1.1V | 70A | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 200V | 70A | 200V | 35 ns | 35 ns | Avalanche | 200V | 4A | 1 | 4A | 10μA @ 200V | 1.1V @ 5A | -55°C~175°C | ||||||||||||||||||||||||||||||||||
| SBRD8340T4G-VF01 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-sbrd8340t4gvf01-datasheets-0144.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 22 Weeks | ACTIVE (Last Updated: 19 hours ago) | yes | FREE WHEELING DIODE | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | R-PSSO-G2 | SINGLE | CATHODE | FAST RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 40V | 200μA | Schottky | 75A | 1 | 3A | 40V | 200μA @ 40V | 600mV @ 3A | 3A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||
| SBR835LT4G-VF01 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | 8 Weeks | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 35V | 1.4mA @ 35V | 510mV @ 8A | 8A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-6TQ040-M3 | Vishay Semiconductor Diodes Division | $0.72 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs6tq045m3-datasheets-3359.pdf | TO-220-2 | 12 Weeks | TO-220AC | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 400pF @ 5V 1MHz | 40V | 800μA @ 40V | 730mV @ 12A | 6A | -55°C~175°C |
