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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Package / Case | Number of Terminations | Factory Lead Time | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Forward Current | Max Surge Current | Configuration | Case Connection | Application | Speed | Diode Element Material | Power Dissipation-Max | Rep Pk Reverse Voltage-Max | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
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| VS-MBR1635-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vsmbr1645m3-datasheets-3516.pdf | TO-220-2 | 12 Weeks | TO-220AC | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 1400pF @ 5V 1MHz | 35V | 200μA @ 35V | 630mV @ 16A | 16A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SFAF1606GHC0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-sfaf1608gc0g-datasheets-3698.pdf | TO-220-2 Full Pack | 10 Weeks | ITO-220AC | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | Standard | 100pF @ 4V 1MHz | 400V | 10μA @ 400V | 1.3V @ 16A | 16A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| C3D02060E-TR | Cree/Wolfspeed |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Z-Rec® | Surface Mount | Tape & Reel (TR) | 3 (168 Hours) | RoHS Compliant | 2013 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 7 Weeks | Fast Recovery =< 500ns, > 200mA (Io) | Silicon Carbide Schottky | 11pF @ 400V 1MHz | 600V | 50μA @ 600V | 1.7V @ 2A | 5A DC | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BYWB29-150HE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-byw29200e345-datasheets-6785.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 29 Weeks | 3 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | Tin | unknown | 8541.10.00.80 | e3 | SINGLE | GULL WING | 245 | BYWB29-150 | 3 | Common Cathode | 30 | 1 | Rectifier Diodes | Not Qualified | R-PSSO-G2 | 8A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 150V | 100A | 25 ns | Standard | 150V | 8A | 1 | 8A | 10μA @ 150V | 1.3V @ 20A | -65°C~150°C | ||||||||||||||||||||||||||
| SDUR2060W | SMC Diode Solutions |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2017 | TO-247-2 | 6 Weeks | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | Standard | 600V | 5μA @ 600V | 1.7V @ 20A | 20A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| LSM840JE3/TR13 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-lsm840ge3tr13-datasheets-3663.pdf | DO-214AB, SMC | 24 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | No | LSM840 | DO-214AB | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 40V | 8A | 40V | 2mA @ 40V | 520mV @ 8A | 8A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||
| 5821SMGE3/TR13 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-5821smje3tr13-datasheets-2547.pdf | DO-215AB, SMC Gull Wing | 22 Weeks | 2 | No | 5821SM | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 30V | 3A | 30V | 1.5mA @ 30V | 480mV @ 3A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 5822SMGE3/TR13 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-5821smje3tr13-datasheets-2547.pdf | DO-215AB, SMC Gull Wing | 22 Weeks | IN PRODUCTION (Last Updated: 2 weeks ago) | No | DO-215AB | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 40V | 3A | 40V | 1.5mA @ 40V | 500mV @ 3A | 3A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| 5820SMGE3/TR13 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-5821smje3tr13-datasheets-2547.pdf | DO-215AB, SMC Gull Wing | 22 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | No | 5820SM | Single | DO-215AB | 3A | Fast Recovery =< 500ns, > 200mA (Io) | 1.5mA | 20V | 150A | Schottky | 20V | 3A | 20V | 1.5mA @ 20V | 460mV @ 3A | 3A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||
| BYWF29-200HE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -65°C | SCHOTTKY | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-byw29200e345-datasheets-6785.pdf | TO-220-2 Full Pack, Isolated Tab | 2 | 29 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | 3 | Single | 1 | Rectifier Diodes | 8A | 100A | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 200V | 100A | 200V | 25 ns | 25 ns | Standard | 200V | 8A | 1 | 8A | 10μA @ 200V | 1.3V @ 20A | -65°C~150°C | ||||||||||||||||||||||||||||
| NSF8MTHE3_A/P | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ns8gte345-datasheets-6732.pdf | TO-220-2 Insulated, TO-220AC | 2 | 29 Weeks | EAR99 | FREE WHEELING DIODE | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | NOT APPLICABLE | 150°C | NOT APPLICABLE | 1 | R-PSFM-T2 | SINGLE | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | Standard | 1kV | 8A | 125A | 1 | 8A | 55pF @ 4V 1MHz | 1000V | 10μA @ 1000V | 1.1V @ 8A | -55°C~150°C | ||||||||||||||||||||||||||||||||||
| MB10H100HE3_A/P | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tube | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-mb10h100he3ai-datasheets-7486.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 29 Weeks | TO-263AB | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 100V | 4.5μA @ 100V | 770mV @ 10A | 10A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NSB8DTHE3_A/P | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ns8gte345-datasheets-6732.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 29 Weeks | EAR99 | FREE WHEELING DIODE | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 245 | 150°C | 30 | 1 | R-PSSO-G2 | SINGLE | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | Standard | 200V | 8A | 125A | 1 | 8A | 55pF @ 4V 1MHz | 200V | 10μA @ 200V | 1.1V @ 8A | -55°C~150°C | ||||||||||||||||||||||||||||||||
| BYWB29-50HE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-byw29200e345-datasheets-6785.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 29 Weeks | 3 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | Tin | unknown | 8541.10.00.80 | e3 | SINGLE | GULL WING | 245 | BYWB29-50 | 3 | Common Cathode | 30 | 1 | Rectifier Diodes | Not Qualified | R-PSSO-G2 | 8A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 50V | 100A | 25 ns | Standard | 50V | 8A | 1 | 8A | 10μA @ 50V | 1.3V @ 20A | -65°C~150°C | ||||||||||||||||||||||||||
| SBR12A45SP5-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SBR® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2012 | /files/diodesincorporated-sbr12a45sp513-datasheets-4117.pdf | PowerDI™ 5 | 3 | 16 Weeks | No SVHC | 3 | no | EAR99 | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | FLAT | 260 | SBR12A45 | 3 | Common Anode | 40 | 1 | Rectifier Diodes | 12A | CATHODE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 300μA | 45V | 280A | Super Barrier | 45V | 12A | 1 | 1000pF @ 4V 1MHz | 300μA @ 45V | 600mV @ 12A | -65°C~175°C | |||||||||||||||||||||||||||
| BYWB29-100HE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-byw29200e345-datasheets-6785.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 29 Weeks | 3 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | Tin | unknown | 8541.10.00.80 | e3 | SINGLE | GULL WING | 245 | BYWB29-100 | 3 | Common Cathode | 30 | 1 | Rectifier Diodes | Not Qualified | R-PSSO-G2 | 8A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 100V | 100A | 25 ns | Standard | 100V | 8A | 1 | 8A | 10μA @ 100V | 1.3V @ 20A | -65°C~150°C | ||||||||||||||||||||||||||
| BYWF29-150HE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-byw29200e345-datasheets-6785.pdf | TO-220-2 Full Pack, Isolated Tab | 2 | 29 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | Tin | unknown | 8541.10.00.80 | e3 | NOT APPLICABLE | 3 | Single | NOT APPLICABLE | 1 | Rectifier Diodes | Not Qualified | 8A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 150V | 100A | 25 ns | Standard | 150V | 8A | 1 | 8A | 10μA @ 150V | 1.3V @ 20A | -65°C~150°C | ||||||||||||||||||||||||||||||
| NSF8JTHE3_A/P | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ns8gte345-datasheets-6732.pdf | TO-220-2 Insulated, TO-220AC | 2 | 29 Weeks | EAR99 | FREE WHEELING DIODE | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | NOT APPLICABLE | 150°C | NOT APPLICABLE | 1 | R-PSFM-T2 | SINGLE | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | Standard | 600V | 8A | 125A | 1 | 8A | 55pF @ 4V 1MHz | 600V | 10μA @ 600V | 1.1V @ 8A | -55°C~150°C | ||||||||||||||||||||||||||||||||||
| DMA10P1200UZ-TRL | IXYS | $2.31 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 20 Weeks | LOW LEAKAGE CURRENT, PD-CASE | IEC-60747 | YES | SINGLE | GULL WING | 150°C | 2 | R-PSSO-G2 | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS | ANODE AND CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 75W | 1200V | 5μA | TO-252AA | Standard | 92A | 1 | 10A | 1pF @ 400V 1MHz | 1200V | 5μA @ 1200V | 1.55V @ 10A | 10A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||
| VS-6TQ035STRR-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs6tq045sm3-datasheets-3420.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | EAR99 | FREE WHEELING DIODE | e3 | Matte Tin (Sn) | SINGLE | GULL WING | 260 | 175°C | 40 | 1 | R-PSSO-G2 | SINGLE | CATHODE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 800μA | Schottky | 35V | 6A | 140A | 1 | 400pF @ 5V 1MHz | 35V | 800μA @ 35V | 600mV @ 6A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||
| VS-MURB1520TRL-M3 | Vishay Semiconductor Diodes Division | $1.00 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRED Pt® | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vsmurb15201m3-datasheets-7042.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 14 Weeks | TO-263AB (D2PAK) | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | Standard | 200V | 10μA @ 200V | 1.05V @ 15A | 15A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BYWF29-50HE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-byw29200e345-datasheets-6785.pdf | TO-220-2 Full Pack, Isolated Tab | 2 | 29 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | Tin | unknown | 8541.10.00.80 | e3 | NOT APPLICABLE | 3 | Single | NOT APPLICABLE | 1 | Rectifier Diodes | Not Qualified | 8A | 100A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 50V | 100A | 50V | 25 ns | 25 ns | Standard | 50V | 8A | 1 | 8A | 10μA @ 50V | 1.3V @ 20A | -65°C~150°C | |||||||||||||||||||||||||||
| FESF8HTHE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-fes8dte345-datasheets-0214.pdf | TO-220-2 Full Pack, Isolated Tab | 2 | 29 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | 3 | Single | 1 | Rectifier Diodes | 8A | 125A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 500V | 125A | 500V | 50 ns | 50 ns | Standard | 500V | 8A | 1 | 8A | 10μA @ 500V | 1.5V @ 8A | -55°C~150°C | ||||||||||||||||||||||||||||||
| VT3080S-M3/4W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TMBS® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vit3080sm34w-datasheets-3827.pdf | TO-220-3 | 3 | 10 Weeks | 3 | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | unknown | 8541.10.00.80 | SINGLE | NOT SPECIFIED | 3 | Common Anode | NOT SPECIFIED | 1 | Not Qualified | 30A | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1mA | 80V | 200A | TO-220AB | Schottky | 80V | 30A | 1 | 1mA @ 80V | 950mV @ 30A | -55°C~150°C | ||||||||||||||||||||||||||||||||
| VS-6TQ045STRL-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | /files/vishaysemiconductordiodesdivision-vs6tq045sm3-datasheets-3420.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | EAR99 | FREE WHEELING DIODE | e3 | Matte Tin (Sn) | SINGLE | GULL WING | 260 | 175°C | 40 | 1 | R-PSSO-G2 | SINGLE | CATHODE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 800μA | Schottky | 45V | 6A | 140A | 1 | 400pF @ 5V 1MHz | 45V | 800μA @ 45V | 600mV @ 6A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||
| NSF8KTHE3_A/P | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ns8gte345-datasheets-6732.pdf | TO-220-2 Insulated, TO-220AC | 2 | 29 Weeks | EAR99 | FREE WHEELING DIODE | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | NOT APPLICABLE | 150°C | NOT APPLICABLE | 1 | R-PSFM-T2 | SINGLE | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | Standard | 800V | 8A | 125A | 1 | 8A | 55pF @ 4V 1MHz | 800V | 10μA @ 800V | 1.1V @ 8A | -55°C~150°C | ||||||||||||||||||||||||||||||||||
| DURF840 | Littelfuse Inc. | $1.37 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DUR | Through Hole | Through Hole | Tube | Not Applicable | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/littelfuseinc-durf840-datasheets-1192.pdf | TO-220-2 Full Pack, Isolated Tab | 2 | 19 Weeks | EAR99 | FREE WHEELING DIODE | unknown | SINGLE | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | R-PSFM-T2 | 8A | SINGLE | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | TO-220AC | 45 ns | Standard | 400V | 8A | 1 | 10μA @ 400V | 1.3V @ 8A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||
| NSF8GTHE3_A/P | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ns8gte345-datasheets-6732.pdf | TO-220-2 Insulated, TO-220AC | 2 | 29 Weeks | EAR99 | FREE WHEELING DIODE | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | NOT APPLICABLE | 150°C | NOT APPLICABLE | 1 | R-PSFM-T2 | SINGLE | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | Standard | 400V | 8A | 125A | 1 | 8A | 55pF @ 4V 1MHz | 400V | 10μA @ 400V | 1.1V @ 8A | -55°C~150°C | ||||||||||||||||||||||||||||||||||
| VF30120SG-M3/4W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vf30120sgm34w-datasheets-4084.pdf | TO-220-3 Isolated Tab | 3 | 10 Weeks | 3 | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | unknown | 8541.10.00.80 | SINGLE | NOT SPECIFIED | 3 | Common Anode | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | 30A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500μA | 120V | 220A | TO-220AB | Schottky | 120V | 30A | 1 | 500μA @ 120V | 1.28V @ 30A | -40°C~150°C | |||||||||||||||||||||||||||||||||
| UGB8FTHE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-byv29400e345-datasheets-7319.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 29 Weeks | 3 | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 245 | 3 | Common Cathode | 30 | 1 | Rectifier Diodes | R-PSSO-G2 | 8A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 300V | 110A | 50 ns | Standard | 300V | 8A | 1 | 8A | 10μA @ 300V | 1.25V @ 8A | -40°C~150°C |
