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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Package / Case | Number of Terminations | Factory Lead Time | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Configuration | Case Connection | Application | Speed | Diode Element Material | Power Dissipation-Max | Rep Pk Reverse Voltage-Max | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SFS1604GHMNG | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-sfs1601gmng-datasheets-3552.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 6 Weeks | TO-263AB (D2PAK) | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | Standard | 80pF @ 4V 1MHz | 200V | 10μA @ 200V | 975mV @ 8A | 16A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-12TQ045S-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | /files/vishaysemiconductordiodesdivision-vs12tq040strrm3-datasheets-3727.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | EAR99 | FREE WHEELING DIODE | e3 | Matte Tin (Sn) | SINGLE | GULL WING | 260 | 150°C | 40 | 1 | R-PSSO-G2 | 15A | SINGLE | CATHODE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1750μA | Schottky | 45V | 15A | 1 | 900pF @ 5V 1MHz | 1.75mA @ 45V | 560mV @ 15A | -55°C~150°C | |||||||||||||||||||||||||||||||||||
| VS-HFA08TB60HN3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, HEXFRED® | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | /files/vishaysemiconductordiodesdivision-vshfa08tb60hn3-datasheets-3926.pdf | TO-220-2 | 2 | 13 Weeks | EAR99 | LOW NOISE, PD-CASE | unknown | 8541.10.00.80 | SINGLE | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | R-PSFM-T2 | SINGLE | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 36W | 5μA | TO-220AC | 37 ns | Standard | 600V | 8A | 60A | 1 | 8A | 600V | 5μA @ 600V | 1.7V @ 8A | -55°C~150°C | ||||||||||||||||||||||||||||||||
| LSM340GE3/TR13 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-lsm345jtr13-datasheets-8241.pdf | DO-215AB, SMC Gull Wing | 24 Weeks | 2 | yes | No | LSM340 | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 40V | 3A | 40V | 1.5mA @ 40V | 520mV @ 3A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-8TQ100S-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | /files/vishaysemiconductordiodesdivision-vs8tq100strlm3-datasheets-6969.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | EAR99 | FREE WHEELING DIODE | e3 | Matte Tin (Sn) | SINGLE | GULL WING | 260 | 175°C | 40 | 1 | R-PSSO-G2 | 8A | SINGLE | CATHODE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 550μA | Schottky | 100V | 8A | 1 | 500pF @ 5V 1MHz | 550μA @ 80V | 720mV @ 8A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||
| VF20150SG-E3/4W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TMBS® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vb20150sge34w-datasheets-2663.pdf | TO-220-3 Full Pack, Isolated Tab | 3 | 10 Weeks | 3 | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | 3 | Common Anode | 1 | Rectifier Diodes | 20A | 140A | 200μA | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 200μA | 150V | 140A | TO-220AB | Schottky | 150V | 20A | 1 | 200μA @ 150V | 1.6V @ 20A | -55°C~150°C | |||||||||||||||||||||||||||||
| SFAF2004G C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-sfaf2008gc0g-datasheets-3705.pdf | TO-220-2 Full Pack | 10 Weeks | ITO-220AC | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | Standard | 170pF @ 4V 1MHz | 200V | 10μA @ 200V | 975mV @ 20A | 20A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SFS1603GHMNG | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-sfs1601gmng-datasheets-3552.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 6 Weeks | TO-263AB (D2PAK) | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | Standard | 80pF @ 4V 1MHz | 150V | 10μA @ 150V | 975mV @ 8A | 16A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SRF10200 C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-srf1030c0g-datasheets-5908.pdf | TO-220-3 Full Pack, Isolated Tab | 10 Weeks | ITO-220AB | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 200V | 100μA @ 200V | 1V @ 5A | 10A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SK15H45 A0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | /files/taiwansemiconductorcorporation-sk15h45r0g-datasheets-3845.pdf | R6, Axial | 10 Weeks | R-6 | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 45V | 150μA @ 45V | 560mV @ 15A | 15A | 200°C Max | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AU3PJHM3_A/H | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, eSMP® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-au3pjhm3ai-datasheets-3653.pdf | TO-277, 3-PowerDFN | 3 | 10 Weeks | 3 | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | Tin | unknown | 8541.10.00.80 | e3 | DUAL | FLAT | NOT SPECIFIED | Common Anode | NOT SPECIFIED | 1 | 3A | CATHODE | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 600V | 45A | TO-277A | 75 ns | Avalanche | 600V | 1.7A | 1 | 72pF @ 4V 1MHz | 10μA @ 600V | 1.9V @ 3A | -55°C~175°C | ||||||||||||||||||||||||||||
| BYWB29-100-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-byw29200e345-datasheets-6785.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 20 Weeks | 3 | yes | EAR99 | FREE WHEELING DIODE | Tin | unknown | 8541.10.00.80 | e3 | SINGLE | GULL WING | 245 | BYWB29-100 | 3 | Common Cathode | 30 | 1 | Rectifier Diodes | Not Qualified | R-PSSO-G2 | 8A | 100A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 100V | 100A | 100V | 25 ns | 25 ns | Standard | 100V | 8A | 1 | 8A | 10μA @ 100V | 1.3V @ 20A | -65°C~150°C | ||||||||||||||||||||||
| FESB8BTHE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-fes8dte345-datasheets-0214.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 29 Weeks | 3 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | 245 | FESB8B | 3 | Common Cathode | 40 | 1 | Rectifier Diodes | R-PSSO-G2 | 8A | 125A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 100V | 125A | 100V | 35 ns | 35 ns | Standard | 100V | 8A | 1 | 8A | 10μA @ 100V | 950mV @ 8A | -55°C~150°C | |||||||||||||||||||||||
| SFS1602GHMNG | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-sfs1601gmng-datasheets-3552.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 6 Weeks | TO-263AB (D2PAK) | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | Standard | 80pF @ 4V 1MHz | 100V | 10μA @ 100V | 975mV @ 8A | 16A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| UGF12JHC0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-ugf12jhc0g-datasheets-3872.pdf | TO-220-2 Full Pack | 16 Weeks | ITO-220AC | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | Standard | 600V | 5μA @ 600V | 2V @ 12A | 12A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-MURB820-1HM3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, FRED Pt® | Through Hole | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vsmurb8201hm3-datasheets-3874.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 14 Weeks | TO-262 | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | Standard | 200V | 5μA @ 200V | 975mV @ 8A | 8A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-20TQ035-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs20tq045m3-datasheets-3440.pdf | TO-220-2 | 12 Weeks | TO-220AC | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 1400pF @ 5V 1MHz | 35V | 2.7mA @ 35V | 730mV @ 40A | 20A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FESB8GTHE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-fes8dte345-datasheets-0214.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 29 Weeks | 3 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | 245 | FESB8G | 3 | Common Cathode | 40 | 1 | Rectifier Diodes | R-PSSO-G2 | 8A | 125A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 400V | 125A | 400V | 50 ns | 50 ns | Standard | 400V | 8A | 1 | 8A | 10μA @ 400V | 1.3V @ 8A | -55°C~150°C | |||||||||||||||||||||||
| SFS1601GHMNG | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-sfs1601gmng-datasheets-3552.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 6 Weeks | TO-263AB (D2PAK) | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | Standard | 80pF @ 4V 1MHz | 50V | 10μA @ 50V | 975mV @ 8A | 16A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VBT2080S-M3/4W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vbt2080sm34w-datasheets-3881.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 22 Weeks | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | R-PSSO-G2 | SINGLE | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 700μA | Schottky | 80V | 20A | 150A | 1 | 80V | 700μA @ 80V | 920mV @ 20A | -55°C~150°C | |||||||||||||||||||||||||||||||||||
| FESB8FTHE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-fes8dte345-datasheets-0214.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 29 Weeks | 3 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | 245 | 3 | Common Cathode | 40 | 1 | Rectifier Diodes | R-PSSO-G2 | 8A | 125A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 300V | 125A | 300V | 50 ns | 50 ns | Standard | 300V | 8A | 1 | 8A | 10μA @ 300V | 1.3V @ 8A | -55°C~150°C | ||||||||||||||||||||||||
| ESH2BA R3G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-esh2dam2g-datasheets-5705.pdf | DO-214AC, SMA | 10 Weeks | DO-214AC (SMA) | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | Standard | 25pF @ 4V 1MHz | 100V | 1μA @ 200V | 900mV @ 1A | 1A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VI20150S-M3/4W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vi20150sm34w-datasheets-3848.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | 10 Weeks | 3 | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | unknown | 8541.10.00.80 | SINGLE | NOT SPECIFIED | 3 | Common Anode | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | 20A | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 250μA | 150V | 160A | Schottky | 150V | 20A | 1 | 250μA @ 150V | 1.43V @ 20A | -55°C~150°C | ||||||||||||||||||||||||||||||||
| AS4PJHM3_A/H | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, eSMP® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-as4pjm386a-datasheets-3994.pdf | TO-277, 3-PowerDFN | 3 | 10 Weeks | 3 | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | Tin | 8541.10.00.80 | e3 | DUAL | FLAT | 260 | Common Anode | 30 | 1 | 4A | CATHODE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 600V | 100A | TO-277A | 1.8 μs | Avalanche | 600V | 2.4A | 1 | 60pF @ 4V 1MHz | 10μA @ 600V | 1.1V @ 4A | -55°C~175°C | |||||||||||||||||||||||||||||
| MBRB1090-E3/4W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TMBS® | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-mbrb10100ctm38w-datasheets-8587.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 22 Weeks | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | 245 | 3 | Common Cathode | 40 | 1 | Rectifier Diodes | R-PSSO-G2 | 10A | 800mV | 150A | 100μA | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 90V | 150A | Schottky | 90V | 10A | 1 | 100μA @ 90V | 800mV @ 10A | -65°C~150°C | ||||||||||||||||||||||||||
| BYWB29-200-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -65°C | SCHOTTKY | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-byw29200e345-datasheets-6785.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 20 Weeks | 3 | yes | EAR99 | FREE WHEELING DIODE | Tin | No | 8541.10.00.80 | e3 | SINGLE | GULL WING | 245 | BYWB29-200 | 3 | Common Cathode | 30 | 1 | Rectifier Diodes | R-PSSO-G2 | 8A | 1.3V | 100A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 200V | 100A | 200V | 25 ns | 25 ns | Standard | 200V | 8A | 1 | 8A | 10μA @ 200V | 1.3V @ 20A | -65°C~150°C | |||||||||||||||||||||
| SK1510-TP | Micro Commercial Co |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/microcommercialco-sk153tp-datasheets-5312.pdf | DO-214AB, SMC | 2 | 8 Weeks | yes | EAR99 | not_compliant | 8541.10.00.80 | e3 | Matte Tin (Sn) | YES | DUAL | C BEND | 260 | 2 | 10 | 1 | Not Qualified | R-PDSO-C2 | SINGLE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100V | Schottky | 275A | 1 | 15A | 500pF @ 4V 1MHz | 100V | 1mA @ 100V | 850mV @ 15A | 15A | -55°C~125°C | |||||||||||||||||||||||||||||||||
| AR4PDHM3_A/H | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, eSMP® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ar4pdm386a-datasheets-6420.pdf | TO-277, 3-PowerDFN | 3 | 10 Weeks | 3 | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | Tin | unknown | 8541.10.00.80 | e3 | DUAL | FLAT | NOT SPECIFIED | Common Anode | NOT SPECIFIED | 1 | 4A | CATHODE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 200V | 65A | TO-277A | 140 ns | Avalanche | 200V | 2A | 1 | 2A | 77pF @ 4V 1MHz | 10μA @ 200V | 1.6V @ 4A | -55°C~175°C | ||||||||||||||||||||||||||||
| FESB8HTHE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-fes8dte345-datasheets-0214.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 29 Weeks | 3 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | 245 | 3 | Common Cathode | 40 | 1 | Rectifier Diodes | R-PSSO-G2 | 8A | 125A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 500V | 125A | 500V | 50 ns | 50 ns | Standard | 500V | 8A | 1 | 8A | 10μA @ 500V | 1.5V @ 8A | -55°C~150°C | ||||||||||||||||||||||||
| AR4PKHM3_A/H | Vishay Semiconductor Diodes Division | $1.12 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, eSMP® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ar4pmhm3ai-datasheets-3408.pdf | TO-277, 3-PowerDFN | 3 | 10 Weeks | 3 | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | Tin | unknown | 8541.10.00.80 | e3 | DUAL | FLAT | NOT SPECIFIED | Common Anode | NOT SPECIFIED | 1 | 4A | CATHODE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 800V | 65A | TO-277A | 120 ns | Avalanche | 800V | 1.8A | 1 | 55pF @ 4V 1MHz | 10μA @ 800V | 1.9V @ 4A | -55°C~175°C |
