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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Polarity | Reference Standard | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Output Current | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Configuration | Case Connection | Application | Speed | Diode Element Material | Power Dissipation-Max | Rep Pk Reverse Voltage-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Reverse Voltage (DC) | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| VS-MBR10T100 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | Through Hole | 175°C | -55°C | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vsmbr10t100-datasheets-4089.pdf | TO-220-2 | 10.66mm | 9.02mm | 4.82mm | 36 Weeks | No SVHC | 2 | No | Single | TO-220AC | 10A | 620mV | 850A | 100μA | Fast Recovery =< 500ns, > 200mA (Io) | 850A | 100μA | 100V | 850A | Schottky | 100V | 10A | 400pF @ 5V 1MHz | 100V | 100μA @ 100V | 790mV @ 10A | 10A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||
| FESF8GTHE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-fes8dte345-datasheets-0214.pdf | TO-220-2 Full Pack, Isolated Tab | 2 | 29 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | 3 | Single | 1 | Rectifier Diodes | 8A | 125A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 400V | 125A | 400V | 50 ns | 50 ns | Standard | 400V | 8A | 1 | 8A | 10μA @ 400V | 1.3V @ 8A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||
| UGF12JD C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-ugf12jdc0g-datasheets-4093.pdf | TO-220-2 Full Pack | 16 Weeks | ITO-220AC | Fast Recovery =< 500ns, > 200mA (Io) | 45ns | Standard | 600V | 500nA @ 600V | 3.1V @ 12A | 12A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMA10P1200UZ-TRL | IXYS | $2.31 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 20 Weeks | LOW LEAKAGE CURRENT, PD-CASE | IEC-60747 | YES | SINGLE | GULL WING | 150°C | 2 | R-PSSO-G2 | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS | ANODE AND CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 75W | 1200V | 5μA | TO-252AA | Standard | 92A | 1 | 10A | 1pF @ 400V 1MHz | 1200V | 5μA @ 1200V | 1.55V @ 10A | 10A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||
| NSF8BTHE3_A/P | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ns8gte345-datasheets-6732.pdf | TO-220-2 Insulated, TO-220AC | 2 | 29 Weeks | EAR99 | FREE WHEELING DIODE | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | NOT APPLICABLE | 150°C | NOT APPLICABLE | 1 | R-PSFM-T2 | SINGLE | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | Standard | 100V | 8A | 125A | 1 | 8A | 55pF @ 4V 1MHz | 100V | 10μA @ 100V | 1.1V @ 8A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||
| FESF8ATHE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-fes8dte345-datasheets-0214.pdf | TO-220-2 Full Pack, Isolated Tab | 2 | 29 Weeks | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | 3 | Single | 1 | Rectifier Diodes | R-PSFM-T2 | 8A | 125A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 50V | 125A | 50V | TO-220AC | 35 ns | 35 ns | Standard | 50V | 8A | 1 | 8A | 10μA @ 50V | 950mV @ 8A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||
| NSF8DTHE3_A/P | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ns8gte345-datasheets-6732.pdf | TO-220-2 Insulated, TO-220AC | 2 | 29 Weeks | EAR99 | FREE WHEELING DIODE | 8541.10.00.80 | e3 | Matte Tin (Sn) | AEC-Q101 | SINGLE | NOT APPLICABLE | 150°C | NOT APPLICABLE | 1 | R-PSFM-T2 | SINGLE | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | Standard | 200V | 8A | 125A | 1 | 8A | 55pF @ 4V 1MHz | 200V | 10μA @ 200V | 1.1V @ 8A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||
| NSB8JTHE3_A/P | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ns8gte345-datasheets-6732.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 29 Weeks | EAR99 | FREE WHEELING DIODE | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 245 | 150°C | 30 | 1 | R-PSSO-G2 | SINGLE | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | Standard | 600V | 8A | 125A | 1 | 8A | 55pF @ 4V 1MHz | 600V | 10μA @ 600V | 1.1V @ 8A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||
| V20120S-M3/4W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vi20120sm34w-datasheets-3618.pdf | TO-220-3 | 3 | 10 Weeks | 3 | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | unknown | 8541.10.00.80 | SINGLE | NOT SPECIFIED | 3 | Common Anode | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | 20A | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 300μA | 120V | 200A | TO-220AB | Schottky | 120V | 20A | 1 | 250μA @ 120V | 1.33V @ 20A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||
| EK 19V1 | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 2013 | https://pdf.utmel.com/r/datasheets/sanken-ek19v-datasheets-1790.pdf | Axial | 2 | 12 Weeks | EAR99 | unknown | 8541.10.00.80 | NO | WIRE | 150°C | 1 | Not Qualified | O-PALF-W2 | SINGLE | ISOLATED | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | Schottky | 40A | 1 | 1.5A | 90V | 2mA @ 90V | 810mV @ 1.5A | 1.5A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| SDUR16Q20CTTB | SMC Diode Solutions |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Not Applicable | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-MBRB745TRR-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vsmbrb735m3-datasheets-3271.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | EAR99 | FREE WHEELING DIODE | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | 245 | 150°C | 30 | 1 | R-PSSO-G2 | SINGLE | CATHODE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | Schottky | 45V | 7.5A | 150A | 1 | 400pF @ 5V 1MHz | 45V | 100μA @ 45V | 570mV @ 7.5A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||
| FESF8CTHE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-fes8dte345-datasheets-0214.pdf | TO-220-2 Full Pack, Isolated Tab | 2 | 29 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | 3 | Single | 1 | Rectifier Diodes | 8A | 125A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 150V | 125A | 150V | 35 ns | 35 ns | Standard | 150V | 8A | 1 | 8A | 10μA @ 150V | 950mV @ 8A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||
| VB20150S-E3/4W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TMBS® | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vb20150se38w-datasheets-7787.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 22 Weeks | 3 | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | GULL WING | 245 | VB20150S | 3 | Single | 40 | 1 | Rectifier Diodes | R-PSSO-G2 | 20A | 160A | 250μA | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 250μA | 150V | 160A | Schottky | 150V | 20A | 1 | 250μA @ 150V | 1.43V @ 20A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||
| RN 1ZV1 | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 2013 | https://pdf.utmel.com/r/datasheets/sanken-rn1zv-datasheets-2428.pdf | Axial | 2 | 12 Weeks | EAR99 | 8541.10.00.80 | NO | WIRE | 150°C | 1 | Not Qualified | O-PALF-W2 | SINGLE | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100ns | Standard | 60A | 1 | 1.5A | 200V | 20μA @ 200V | 920mV @ 1.5A | 1.5A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| BYWF29-100HE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-byw29200e345-datasheets-6785.pdf | TO-220-2 Full Pack, Isolated Tab | 2 | 29 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | Tin | unknown | 8541.10.00.80 | e3 | NOT APPLICABLE | 3 | Single | NOT APPLICABLE | 1 | Rectifier Diodes | Not Qualified | 8A | 100A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 100V | 100A | 100V | 25 ns | 25 ns | Standard | 100V | 8A | 1 | 8A | 10μA @ 100V | 1.3V @ 20A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||
| VIT3080S-E3/4W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vt3080se34w-datasheets-0079.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | 10 Weeks | 3 | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | unknown | 8541.10.00.80 | SINGLE | NOT SPECIFIED | 3 | Common Anode | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | 30A | 200A | 70μA | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1mA | 80V | 200A | Schottky | 80V | 30A | 1 | 1mA @ 80V | 950mV @ 30A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||
| BYWB29-200HE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -65°C | SCHOTTKY | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-byw29200e345-datasheets-6785.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 29 Weeks | 3 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | Tin | unknown | 8541.10.00.80 | e3 | SINGLE | GULL WING | 245 | BYWB29-200 | 3 | Common Cathode | 30 | 1 | Rectifier Diodes | Not Qualified | R-PSSO-G2 | 8A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 200V | 100A | 25 ns | Standard | 200V | 8A | 1 | 8A | 10μA @ 200V | 1.3V @ 20A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||
| VS-MURB820HM3 | Vishay Semiconductor Diodes Division | $1.13 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, FRED Pt® | Surface Mount | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vsmurb8201hm3-datasheets-3874.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 14 Weeks | TO-263 (D2Pak) | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | Standard | 200V | 5μA @ 200V | 975mV @ 8A | 8A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-20L15T-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs20l15tm3-datasheets-4069.pdf | TO-220-2 | 12 Weeks | TO-220AC | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 2000pF @ 5V 1MHz | 15V | 10mA @ 15V | 520mV @ 40A | 20A | -55°C~125°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FESF8JTHE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-fes8dte345-datasheets-0214.pdf | TO-220-2 Full Pack, Isolated Tab | 2 | 29 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | 3 | Single | 1 | Rectifier Diodes | 8A | 125A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 600V | 125A | 600V | 50 ns | 50 ns | Standard | 600V | 8A | 1 | 8A | 10μA @ 600V | 1.5V @ 8A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||
| VS-10TQ045S-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | /files/vishaysemiconductordiodesdivision-vs10tq035strrm3-datasheets-3796.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | EAR99 | FREE WHEELING DIODE | e3 | Matte Tin (Sn) | SINGLE | GULL WING | 260 | 175°C | 40 | 1 | R-PSSO-G2 | 10A | SINGLE | CATHODE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 2000μA | Schottky | 45V | 10A | 1 | 900pF @ 5V 1MHz | 2mA @ 45V | 570mV @ 10A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||
| VI20100S-E3/4W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TMBS® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vb20100se38w-datasheets-7106.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | Lead Free | 10 Weeks | 3 | No | Standard | Common Anode | TO-262AA | 20A | 20A | 250A | 500μA | Fast Recovery =< 500ns, > 200mA (Io) | 500μA | 100V | 250A | Schottky | 100V | 20A | 100V | 500μA @ 100V | 900mV @ 20A | 20A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||
| UGA8120 C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-uga8120c0g-datasheets-3978.pdf | TO-220-2 | 10 Weeks | TO-220AC | Fast Recovery =< 500ns, > 200mA (Io) | 70ns | Standard | 5μA @ 1200V | 2.8V @ 8A | 8A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NRVB30H100MFST1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2014 | /files/onsemiconductor-mbr30h100mfst1g-datasheets-4074.pdf | 8-PowerTDFN, 5 Leads | Lead Free | 5 | 5 Weeks | 5 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | not_compliant | e3 | Tin (Sn) | AEC-Q101 | DUAL | FLAT | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | Rectifier Diodes | 30A | 810mV | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 300A | 5μA | 100V | 300A | Schottky | 100V | 30A | 1 | 100V | 100μA @ 100V | 900mV @ 30A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||
| SFS1606GHMNG | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-sfs1601gmng-datasheets-3552.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 6 Weeks | TO-263AB (D2PAK) | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | Standard | 60pF @ 4V 1MHz | 400V | 10μA @ 400V | 1.3V @ 8A | 16A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| UGB8GTHE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-byv29400e345-datasheets-7319.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 29 Weeks | 3 | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 245 | 3 | Common Cathode | 30 | 1 | Rectifier Diodes | R-PSSO-G2 | 8A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 400V | 110A | 50 ns | Standard | 400V | 8A | 1 | 8A | 10μA @ 400V | 1.25V @ 8A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||
| BYWB29-50-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-byw29200e345-datasheets-6785.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 20 Weeks | 3 | yes | EAR99 | FREE WHEELING DIODE | Tin | No | 8541.10.00.80 | e3 | SINGLE | GULL WING | 245 | BYWB29-50 | 3 | Common Cathode | 30 | 1 | Rectifier Diodes | R-PSSO-G2 | 8A | 100A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 50V | 100A | 50V | 25 ns | 25 ns | Standard | 50V | 8A | 1 | 8A | 10μA @ 50V | 1.3V @ 20A | -65°C~150°C | |||||||||||||||||||||||||||||||||||
| VS-12TQ035S-M3 | Vishay Semiconductor Diodes Division | $1.81 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs12tq040strrm3-datasheets-3727.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | EAR99 | FREE WHEELING DIODE | e3 | Matte Tin (Sn) | SINGLE | GULL WING | 260 | 150°C | 40 | 1 | R-PSSO-G2 | SINGLE | CATHODE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1750μA | Schottky | 35V | 15A | 250A | 1 | 900pF @ 5V 1MHz | 35V | 1.75mA @ 35V | 560mV @ 15A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||
| VS-MBRB735TRL-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vsmbrb735m3-datasheets-3271.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | EAR99 | FREE WHEELING DIODE | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | 245 | 150°C | 30 | 1 | R-PSSO-G2 | SINGLE | CATHODE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | Schottky | 35V | 7.5A | 150A | 1 | 400pF @ 5V 1MHz | 35V | 100μA @ 35V | 570mV @ 7.5A | -65°C~150°C |
