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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | RoHS Status | Published | Datasheet | Package / Case | Lead Free | Number of Terminations | Factory Lead Time | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Configuration | Case Connection | Application | Speed | Diode Element Material | Rep Pk Reverse Voltage-Max | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
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| ES2A-E3/5BT | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-es2be352t-datasheets-6983.pdf | DO-214AA, SMB | 2 | 22 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | ES2A | 2 | Single | 30 | 1 | Rectifier Diodes | 2A | 900mV | 50A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 50V | 50A | 50V | 30 ns | 30 ns | Standard | 50V | 2A | 1 | 2A | 18pF @ 4V 1MHz | 10μA @ 50V | 900mV @ 2A | -50°C~150°C | ||||||||||||||||||||
| S3D-E3/9AT | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-s3de357t-datasheets-0694.pdf | DO-214AB, SMC | Lead Free | 2 | 11 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | S3D | 2 | Single | 30 | 1 | Rectifier Diodes | 3A | 1.15V | 100A | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 200V | 100A | 200V | 2.5 μs | 2.5 μs | Standard | 200V | 3A | 1 | 3A | 60pF @ 4V 1MHz | 10μA @ 200V | 1.15V @ 2.5A | -55°C~150°C | |||||||||||||||||||
| CURB205-G | Comchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/comchiptechnology-curb207g-datasheets-1205.pdf | DO-214AA, SMB | 12 Weeks | 150°C | 1 | Rectifier Diodes | SINGLE | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | Standard | 600V | 2A | 50A | 2A | 600V | 5μA @ 600V | 1.7V @ 2A | 150°C Max | ||||||||||||||||||||||||||||||||||||||||||||||
| RGL34B-E3/98 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-rgl34je398-datasheets-1957.pdf | DO-213AA (Glass) | 2 | 19 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE | unknown | 8541.10.00.70 | e3 | Matte Tin (Sn) | END | WRAP AROUND | 260 | RGL34B | 2 | Single | 40 | 1 | Rectifier Diodes | Not Qualified | 10A | 5μA | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 150 ns | 150 ns | Standard | 100V | 500mA | 0.5A | 4pF @ 4V 1MHz | 5μA @ 100V | 1.3V @ 500mA | -65°C~175°C | ||||||||||||||||||||||||
| RGL34D-E3/83 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-rgl34je398-datasheets-1957.pdf | DO-213AA (Glass) | 2 | 19 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.70 | e3 | MATTE TIN | END | WRAP AROUND | 260 | RGL34D | 2 | Single | 40 | 1 | Rectifier Diodes | 500mA | 1.3V | 10A | 5μA | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 200V | 10A | 150 ns | 150 ns | Standard | 200V | 500mA | 0.5A | 4pF @ 4V 1MHz | 5μA @ 200V | 1.3V @ 500mA | -65°C~175°C | ||||||||||||||||||||
| S3A-E3/9AT | Vishay Semiconductor Diodes Division | $0.41 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-s3de357t-datasheets-0694.pdf | DO-214AB, SMC | 2 | 11 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | S3A | 2 | Single | 30 | 1 | Rectifier Diodes | 3A | 1.15V | 100A | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 50V | 100A | 50V | 2.5 μs | 2.5 μs | Standard | 50V | 3A | 1 | 3A | 60pF @ 4V 1MHz | 10μA @ 50V | 1.15V @ 2.5A | -55°C~150°C | |||||||||||||||||||
| 1N5817 BK PBFREE | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 1 (Unlimited) | https://pdf.utmel.com/r/datasheets/centralsemiconductorcorp-1n5817trpbfree-datasheets-5888.pdf | DO-204AL, DO-41, Axial | 12 Weeks | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 20V | 1mA @ 20V | 450mV @ 1A | 1A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CURB206-G | Comchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2012 | /files/comchiptechnology-curb207g-datasheets-1205.pdf | DO-214AA, SMB | 12 Weeks | 150°C | 1 | Rectifier Diodes | SINGLE | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | Standard | 800V | 2A | 50A | 2A | 800V | 5μA @ 800V | 1.7V @ 2A | 150°C Max | ||||||||||||||||||||||||||||||||||||||||||||||
| BYM07-50HE3_A/I | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, Superectifier® | Surface Mount | Tape & Reel (TR) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-bym07200e398-datasheets-1309.pdf | DO-213AA (Glass) | 14 Weeks | DO-213AA (GL34) | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | Standard | 7pF @ 4V 1MHz | 50V | 5μA @ 50V | 1.25V @ 500mA | 500mA | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| EGL34CHE3_A/I | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, Superectifier® | Surface Mount | Tape & Reel (TR) | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-bym07200e398-datasheets-1309.pdf | DO-213AA (Glass) | 14 Weeks | DO-213AA (GL34) | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | Standard | 7pF @ 4V 1MHz | 150V | 5μA @ 150V | 1.25V @ 500mA | 500mA | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EGL34BHE3_A/I | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, Superectifier® | Surface Mount | Tape & Reel (TR) | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-bym07200e398-datasheets-1309.pdf | DO-213AA (Glass) | DO-213AA (GL34) | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | Standard | 7pF @ 4V 1MHz | 100V | 5μA @ 100V | 1.25V @ 500mA | 500mA | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BYM07-300HE3_A/I | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, Superectifier® | Surface Mount | Tape & Reel (TR) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-bym07200e398-datasheets-1309.pdf | DO-213AA (Glass) | 14 Weeks | DO-213AA (GL34) | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | Standard | 7pF @ 4V 1MHz | 300V | 5μA @ 300V | 1.35V @ 500mA | 500mA | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| SGL41-30-E3/97 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 125°C | -55°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-bym1330e396-datasheets-0135.pdf | DO-213AB, MELF | 2 | 8 Weeks | 2 | yes | EAR99 | LOW POWER LOSS, FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | END | WRAP AROUND | 250 | SGL41-30 | 2 | Single | 40 | 1 | Rectifier Diodes | 1A | 30A | 500μA | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500μA | 30V | 30A | Schottky | 30V | 1A | 1A | 110pF @ 4V 1MHz | 500μA @ 30V | 500mV @ 1A | -55°C~125°C | ||||||||||||||||||||||||
| CRS15I40A(TE85L,QM | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2014 | SOD-123F | 12 Weeks | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 35pF @ 10V 1MHz | 40V | 60μA @ 40V | 550mV @ 1.5A | 1.5A | 150°C Max | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| S3J-M3/9AT | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-s3de357t-datasheets-0694.pdf | DO-214AB, SMC | 2 | 11 Weeks | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 150°C | 30 | 1 | R-PDSO-C2 | SINGLE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 2.5 μs | Standard | 600V | 3A | 100A | 1 | 3A | 60pF @ 4V 1MHz | 600V | 10μA @ 600V | 1.15V @ 2.5A | -55°C~150°C | ||||||||||||||||||||||||||||||
| SF2GDF-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-sf2ddf13-datasheets-3916.pdf | 2-SMD, Flat Lead | 2 | 12 Weeks | FREE WHEELING DIODE, LOW POWER LOSS, LOW LEAKAGE CURRENT | not_compliant | e3 | Matte Tin (Sn) | YES | DUAL | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | R-PDSO-F2 | SINGLE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 400V | 5μA | 35ns | Standard | 50A | 1 | 2A | 50pF @ 4V 1MHz | 400V | 5μA @ 400V | 1.3V @ 2A | 2A | -55°C~150°C | ||||||||||||||||||||||||||||||||||
| BYG21KHM3_A/H | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-byg21km3tr-datasheets-6706.pdf | DO-214AC, SMA | 10 Weeks | DO-214AC (SMA) | Fast Recovery =< 500ns, > 200mA (Io) | 120ns | Avalanche | 800V | 1μA @ 800V | 1.6V @ 1.5A | 1.5A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| BYM10-50HE3/96 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2009 | /files/vishaysemiconductordiodesdivision-gl41ae397-datasheets-5861.pdf | DO-213AB, MELF (Glass) | 2 | 19 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | Tin | unknown | 8541.10.00.80 | e3 | END | WRAP AROUND | NOT SPECIFIED | BYM10-50 | 2 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | 1A | 1.1V | 30A | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 50V | 30A | 50V | Standard | 50V | 1A | 1A | 8pF @ 4V 1MHz | 10μA @ 50V | 1.1V @ 1A | -65°C~175°C | |||||||||||||||||||||
| BYG20GHM3_A/I | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-byg20je3tr-datasheets-4525.pdf | DO-214AC, SMA | 10 Weeks | DO-214AC (SMA) | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | Avalanche | 400V | 1μA @ 400V | 1.4V @ 1.5A | 1.5A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N4937 BK PBFREE | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 1 (Unlimited) | https://pdf.utmel.com/r/datasheets/centralsemiconductorcorp-1n4936trpbfree-datasheets-3191.pdf | DO-204AL, DO-41, Axial | 12 Weeks | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | Standard | 600V | 5μA @ 600V | 1.2V @ 1A | 1A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EGL34AHE3_A/I | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, Superectifier® | Surface Mount | Tape & Reel (TR) | /files/vishaysemiconductordiodesdivision-bym07200e398-datasheets-1309.pdf | DO-213AA (Glass) | 18 Weeks | DO-213AA (GL34) | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | Standard | 7pF @ 4V 1MHz | 50V | 5μA @ 50V | 1.25V @ 500mA | 500mA | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CURB201-G | Comchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2012 | /files/comchiptechnology-curb207g-datasheets-1205.pdf | DO-214AA, SMB | 12 Weeks | 150°C | 1 | Rectifier Diodes | SINGLE | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | Standard | 50V | 2A | 50A | 2A | 50V | 5μA @ 50V | 1V @ 2A | 150°C Max | ||||||||||||||||||||||||||||||||||||||||||||||
| EGL34DHE3_A/I | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, Superectifier® | Surface Mount | Tape & Reel (TR) | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-bym07200e398-datasheets-1309.pdf | DO-213AA (Glass) | DO-213AA (GL34) | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | Standard | 7pF @ 4V 1MHz | 200V | 5μA @ 200V | 1.25V @ 500mA | 500mA | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BYG20JHM3_A/I | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-byg20je3tr-datasheets-4525.pdf | DO-214AC, SMA | 10 Weeks | DO-214AC (SMA) | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | Avalanche | 600V | 1μA @ 600V | 1.4V @ 1.5A | 1.5A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N4936 BK PBFREE | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 1 (Unlimited) | https://pdf.utmel.com/r/datasheets/centralsemiconductorcorp-1n4936trpbfree-datasheets-3191.pdf | DO-204AL, DO-41, Axial | 12 Weeks | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | Standard | 400V | 5μA @ 400V | 1.2V @ 1A | 1A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BYM10-100HE3/96 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2009 | /files/vishaysemiconductordiodesdivision-gl41ae397-datasheets-5861.pdf | DO-213AB, MELF (Glass) | 2 | 19 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | Tin | unknown | 8541.10.00.80 | END | WRAP AROUND | NOT SPECIFIED | BYM10-100 | 2 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | 1A | 1.1V | 30A | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 100V | 30A | 100V | Standard | 100V | 1A | 1A | 8pF @ 4V 1MHz | 10μA @ 100V | 1.1V @ 1A | -65°C~175°C | ||||||||||||||||||||||
| RU 1BV1 | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Box (TB) | 1 (Unlimited) | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/sanken-ru1bv-datasheets-2406.pdf | Axial | 2 | 12 Weeks | EAR99 | 8541.10.00.70 | NO | WIRE | 150°C | 1 | Not Qualified | O-PALF-W2 | SINGLE | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 400ns | Standard | 0.25A | 800V | 10μA @ 800V | 2.5V @ 250mA | 250mA | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||
| BYG10KHM3_A/I | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-byg10ye3tr-datasheets-7061.pdf | DO-214AC, SMA | 10 Weeks | DO-214AC (SMA) | Standard Recovery >500ns, > 200mA (Io) | 4μs | Avalanche | 800V | 1μA @ 800V | 1.15V @ 1.5A | 1.5A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| FR307G A0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-fr301gr0g-datasheets-6579.pdf | DO-201AD, Axial | 10 Weeks | DO-201AD | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | Standard | 30pF @ 4V 1MHz | 5μA @ 1000V | 1.3V @ 3A | 3A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SB240S-E3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 125°C | -65°C | ROHS3 Compliant | 2017 | /files/vishaysemiconductordiodesdivision-sb260se373-datasheets-2067.pdf | DO-204AL, DO-41, Axial | 2 | 8 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | SB240 | 2 | Single | 1 | Rectifier Diodes | 2A | 50A | 500μA | ISOLATED | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500μA | 40V | 50A | Schottky | 40V | 2A | 1 | 2A | 500μA @ 40V | 500mV @ 2A | -65°C~125°C |
