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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Diameter | Package / Case | Capacitance | Height | Lead Free | Number of Terminations | Factory Lead Time | Weight | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Output Current | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Configuration | Case Connection | Application | Natural Thermal Resistance | Speed | Diode Element Material | Power Dissipation-Max | Rep Pk Reverse Voltage-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Reverse Recovery Time-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MBR5200VPC-E1 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-mbr5200vpbtre1-datasheets-8602.pdf | DO-201AA, DO-27, Axial | 2 | 5 Weeks | EAR99 | LOW NOISE | not_compliant | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | O-PALF-W2 | SINGLE | ISOLATED | HIGH VOLTAGE POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500μA | Schottky | 200V | 5A | 100A | 1 | 5A | 200V | 500μA @ 200V | 950mV @ 5A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||
| ZHCS1000QTA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2015 | /files/diodesincorporated-zhcs1000qta-datasheets-2469.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 17 Weeks | EAR99 | HIGH RELIABILITY | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 125°C | 30 | 1 | R-PDSO-G3 | SINGLE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 0.5W | 12 ns | Schottky | 40V | 1A | 1A | 25pF @ 30V 1MHz | 40V | 100μA @ 30V | 425mV @ 1A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||
| RO 2V | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/sanken-ro2cv-datasheets-8707.pdf | Axial | 2 | 12 Weeks | EAR99 | 8541.10.00.80 | NO | WIRE | 150°C | 1 | Not Qualified | O-PALF-W2 | SINGLE | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | Standard | 80A | 1 | 1.2A | 400V | 10μA @ 400V | 920mV @ 1.5A | 1.2A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| SF43G R0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-sf46gr0g-datasheets-7907.pdf | DO-201AD, Axial | 2 | 10 Weeks | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY, LOW POWER LOSS | not_compliant | 8541.10.00.80 | e3 | Tin (Sn) | NO | WIRE | 150°C | 1 | O-PALF-W2 | SINGLE | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 150V | 5μA | 35ns | Standard | 125A | 1 | 4A | 100pF @ 4V 1MHz | 150V | 5μA @ 150V | 1V @ 4A | 4A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||
| EK 04W | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Box (TB) | 1 (Unlimited) | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/sanken-ek04v-datasheets-1844.pdf | Axial | 2 | 12 Weeks | EAR99 | 8541.10.00.80 | NO | WIRE | 150°C | 1 | Rectifier Diodes | Not Qualified | O-PALF-W2 | SINGLE | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 40V | Schottky | 40A | 1A | 40V | 5mA @ 40V | 550mV @ 1A | 1A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SS8PH9HM3_A/I | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tape & Reel (TR) | 1 | ROHS3 Compliant | 2017 | /files/vishaysemiconductordiodesdivision-ss8ph9m387a-datasheets-0796.pdf | TO-277, 3-PowerDFN | 3 | 10 Weeks | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | YES | DUAL | FLAT | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | R-PDSO-F3 | SINGLE | CATHODE | HIGH VOLTAGE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 90V | 2μA | TO-277A | Schottky | 150A | 1 | 8A | 140pF @ 4V 1MHz | 90V | 2μA @ 90V | 900mV @ 8A | 8A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||
| SGL41-20HE3/97 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 125°C | -55°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-bym1330e396-datasheets-0135.pdf | DO-213AB, MELF | 2 | 8 Weeks | 2 | yes | EAR99 | LOW POWER LOSS, FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | END | WRAP AROUND | 250 | SGL41-20 | 2 | Single | 40 | 1 | Rectifier Diodes | 1A | 30A | 500μA | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500μA | 20V | 30A | Schottky | 20V | 1A | 1A | 110pF @ 4V 1MHz | 500μA @ 20V | 500mV @ 1A | -55°C~125°C | |||||||||||||||||||||||||||||||||||||
| S3G-M3/9AT | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-s3de357t-datasheets-0694.pdf | DO-214AB, SMC | 2 | 11 Weeks | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 150°C | 30 | 1 | R-PDSO-C2 | SINGLE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 2.5 μs | Standard | 400V | 3A | 100A | 1 | 3A | 60pF @ 4V 1MHz | 400V | 10μA @ 400V | 1.15V @ 2.5A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||
| SBR8E45P5-7D | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SBR® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/diodesincorporated-sbr8e45p57-datasheets-1054.pdf | PowerDI™ 5 | 3 | 15 Weeks | EAR99 | FREE WHEELING DIODE | not_compliant | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | R-PDSO-F3 | SINGLE | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 350μA | Super Barrier | 45V | 8A | 140A | 1 | 8A | 45V | 350μA @ 45V | 510mV @ 8A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||
| SBR10E45P5-7D | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/diodesincorporated-sbr10e45p513-datasheets-0786.pdf | PowerDI™ 5 | 3 | 15 Weeks | yes | EAR99 | FREE WHEELING DIODE | not_compliant | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | R-PDSO-F3 | SINGLE | CATHODE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 280μA | Super Barrier | 45V | 10A | 275A | 1 | 45V | 280μA @ 45V | 470mV @ 10A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||
| V8P6-M3/86A | Vishay Semiconductor Diodes Division | $0.48 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eSMP®, TMBS® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-v8p6hm3ai-datasheets-8015.pdf | TO-277, 3-PowerDFN | 3 | 10 Weeks | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | R-PDSO-F3 | SINGLE | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 600μA | TO-277A | Schottky | 60V | 4.2A | 140A | 1 | 60V | 600μA @ 60V | 610mV @ 8A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||
| SK510BHR5G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-sk510br5g-datasheets-0101.pdf | DO-214AA, SMB | 20 Weeks | DO-214AA (SMB) | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 100V | 100μA @ 100V | 850mV @ 5A | 5A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EK 16V0 | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Box (TB) | 1 (Unlimited) | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/sanken-ek16v1-datasheets-9587.pdf | Axial | 12 Weeks | EAR99 | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 60V | 1mA @ 60V | 620mV @ 1.5A | 1.5A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RU 1BV | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/sanken-ru1bv-datasheets-2406.pdf | Axial | 2 | 12 Weeks | EAR99 | 8541.10.00.70 | NO | WIRE | 150°C | 1 | Not Qualified | O-PALF-W2 | SINGLE | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 400ns | Standard | 0.25A | 800V | 10μA @ 800V | 2.5V @ 250mA | 250mA | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EK 09V1 | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Box (TB) | 1 (Unlimited) | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/sanken-ek09v-datasheets-2073.pdf | Axial | 2 | 12 Weeks | EAR99 | 8541.10.00.80 | NO | WIRE | 150°C | 1 | Not Qualified | O-PALF-W2 | SINGLE | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | Schottky | 0.7A | 0.1μs | 90V | 1mA @ 90V | 810mV @ 700mA | 700mA | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SF44G A0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | /files/taiwansemiconductorcorporation-sf46gr0g-datasheets-7907.pdf | DO-201AD, Axial | 10 Weeks | DO-201AD | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | Standard | 100pF @ 4V 1MHz | 200V | 5μA @ 200V | 1V @ 4A | 4A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 31GF4-M3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-31gf4e354-datasheets-8827.pdf | DO-201AD, Axial | 2 | 8 Weeks | FREE WHEELING DIODE | unknown | WIRE | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | O-PALF-W2 | SINGLE | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 20μA | 30 ns | Standard | 400V | 3A | 60A | 1 | 1.5A | 400V | 20μA @ 400V | 1.25V @ 3A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||
| RK 39V | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/sanken-rk39v-datasheets-2411.pdf | Axial | 2 | 12 Weeks | EAR99 | 8541.10.00.80 | NO | WIRE | 150°C | 1 | Not Qualified | O-PALF-W2 | SINGLE | ISOLATED | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | Schottky | 50A | 1 | 2A | 90V | 3mA @ 90V | 810mV @ 2A | 2A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| EK 19V0 | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Box (TB) | 1 (Unlimited) | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/sanken-ek19v-datasheets-1790.pdf | Axial | 12 Weeks | EAR99 | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 90V | 2mA @ 90V | 810mV @ 1.5A | 1.5A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RM 2AV | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/sanken-rm2av1-datasheets-9341.pdf | Axial | 2 | 12 Weeks | EAR99 | 8541.10.00.80 | NO | WIRE | 150°C | 1 | Not Qualified | O-PALF-W2 | SINGLE | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | Standard | 100A | 1 | 1.2A | 600V | 10μA @ 600V | 910mV @ 1.5A | 1.2A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| U3B-E3/57T | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-u3de357t-datasheets-5337.pdf | DO-214AB, SMC | 2 | 21 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 2 | Single | 40 | 1 | Rectifier Diodes | 3A | 100A | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 100V | 100A | 100V | 20 ns | 30 ns | Standard | 100V | 2A | 1 | 3A | 10μA @ 100V | 900mV @ 3A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||
| RM 1BV1 | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Box (TB) | 1 (Unlimited) | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/sanken-rm1bv-datasheets-2335.pdf | Axial | 2 | 12 Weeks | EAR99 | 8541.10.00.80 | NO | WIRE | 150°C | 1 | Not Qualified | O-PALF-W2 | SINGLE | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | Standard | 0.8A | 800V | 5μA @ 800V | 1.2V @ 1A | 800mA | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SGL41-20-E3/97 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 125°C | -55°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-bym1330e396-datasheets-0135.pdf | DO-213AB, MELF | 2 | 8 Weeks | 2 | yes | EAR99 | LOW POWER LOSS, FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | END | WRAP AROUND | 250 | SGL41-20 | 2 | Single | 40 | 1 | Rectifier Diodes | 1A | 500mV | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 30A | 500μA | 20V | 30A | Schottky | 20V | 1A | 1A | 110pF @ 4V 1MHz | 500μA @ 20V | 500mV @ 1A | -55°C~125°C | |||||||||||||||||||||||||||||||||||||
| ESH3C-M3/9AT | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-esh3dm357t-datasheets-2131.pdf | DO-214AB, SMC | 2 | 21 Weeks | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | C BEND | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | R-PDSO-C2 | SINGLE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 40 ns | Standard | 150V | 3A | 125A | 1 | 3A | 70pF @ 4V 1MHz | 150V | 5μA @ 150V | 900mV @ 3A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||
| RN 1ZV | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/sanken-rn1zv-datasheets-2428.pdf | Axial | 2 | 12 Weeks | EAR99 | 8541.10.00.80 | NO | WIRE | 150°C | 1 | Not Qualified | O-PALF-W2 | SINGLE | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100ns | Standard | 60A | 1 | 1.5A | 200V | 20μA @ 200V | 920mV @ 1.5A | 1.5A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||
| RS 1AV | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/sanken-rs1av-datasheets-2431.pdf | Axial | 2 | 12 Weeks | EAR99 | 8541.10.00.80 | NO | WIRE | 150°C | 1 | Not Qualified | O-PALF-W2 | SINGLE | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1.5μs | Standard | 0.7A | 600V | 10μA @ 600V | 2.5V @ 800mA | 700mA | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EGP30B | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2004 | /files/onsemiconductor-egp30g-datasheets-0866.pdf | 100V | 3A | 5.6mm | DO-201AD, Axial | 95pF | 9.5mm | Lead Free | 2 | 10 Weeks | 360mg | 2 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | No | 8541.10.00.80 | e3 | Tin (Sn) | WIRE | EGP30B | Single | 6.25W | 1 | Rectifier Diodes | 3A | 3A | 950mV | 125A | ISOLATED | EFFICIENCY | 20 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 125A | 5μA | 100V | 125A | 100V | 50 ns | 50 ns | Standard | 100V | 3A | 1 | 95pF @ 4V 1MHz | 5μA @ 100V | 950mV @ 3A | -65°C~150°C | ||||||||||||||||||||||||||
| SJPB-H4VL | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/sanken-sjpbh4vr-datasheets-9402.pdf | 2-SMD, J-Lead | 12 Weeks | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 40V | 2A | 40V | 200μA @ 40V | 550mV @ 2A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RO 2V1 | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Box (TB) | 1 (Unlimited) | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/sanken-ro2cv-datasheets-8707.pdf | Axial | 2 | 12 Weeks | EAR99 | 8541.10.00.80 | NO | WIRE | 150°C | 1 | Not Qualified | O-PALF-W2 | SINGLE | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | Standard | 80A | 1 | 1.2A | 400V | 10μA @ 400V | 920mV @ 1.5A | 1.2A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| ESH3D-M3/9AT | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-esh3dm357t-datasheets-2131.pdf | DO-214AB, SMC | 2 | 21 Weeks | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | C BEND | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | R-PDSO-C2 | SINGLE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 40 ns | Standard | 200V | 3A | 125A | 1 | 3A | 70pF @ 4V 1MHz | 200V | 5μA @ 200V | 900mV @ 3A | -55°C~175°C |
