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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | RoHS Status | Published | Datasheet | Package / Case | Lead Free | Number of Terminations | Factory Lead Time | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Configuration | Case Connection | Application | Speed | Diode Element Material | Rep Pk Reverse Voltage-Max | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | JEDEC-95 Code | Reverse Test Voltage | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| BYG21MHM3_A/I | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-byg21km3tr-datasheets-6706.pdf | DO-214AC, SMA | 10 Weeks | DO-214AC (SMA) | Fast Recovery =< 500ns, > 200mA (Io) | 120ns | Avalanche | 1000V | 1μA @ 1000V | 1.6V @ 1.5A | 1.5A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SGL41-40HE3/97 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 125°C | -55°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-bym1330e396-datasheets-0135.pdf | DO-213AB, MELF | 2 | 8 Weeks | 2 | yes | EAR99 | LOW POWER LOSS, FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | END | WRAP AROUND | 250 | SGL41-40 | 2 | Single | 40 | 1 | Rectifier Diodes | 1A | 500mV | 30A | 500μA | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500μA | 40V | 30A | Schottky | 40V | 1A | 1A | 110pF @ 4V 1MHz | 500μA @ 40V | 500mV @ 1A | -55°C~125°C | ||||||||||||||||||||||||
| BYG21MHM3_A/H | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-byg21km3tr-datasheets-6706.pdf | DO-214AC, SMA | 10 Weeks | DO-214AC (SMA) | Fast Recovery =< 500ns, > 200mA (Io) | 120ns | Avalanche | 1000V | 1μA @ 1000V | 1.6V @ 1.5A | 1.5A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BYG10DHM3_A/I | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-byg10ye3tr-datasheets-7061.pdf | DO-214AC, SMA | 10 Weeks | DO-214AC (SMA) | Standard Recovery >500ns, > 200mA (Io) | 4μs | Avalanche | 200V | 1μA @ 200V | 1.15V @ 1.5A | 1.5A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| XBS104S14R-G | Torex Semiconductor Ltd |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2009 | /files/torexsemiconductorltd-xbs104s14rg-datasheets-2584.pdf | SOD-123 | 2 | 10 Weeks | EAR99 | 8541.10.00.80 | DUAL | GULL WING | 2 | 125°C | 1 | R-PDSO-G2 | SINGLE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 25 ns | Schottky | 40V | 1A | 1A | 35pF @ 10V 1MHz | 40V | 200μA @ 40V | 540mV @ 1A | 125°C Max | ||||||||||||||||||||||||||||||||||||||||
| FR306G R0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-fr301gr0g-datasheets-6579.pdf | DO-201AD, Axial | 2 | 10 Weeks | EAR99 | HIGH RELIABILITY, LOW POWER LOSS | not_compliant | 8541.10.00.80 | e3 | Tin (Sn) | NO | WIRE | 150°C | 1 | O-PALF-W2 | SINGLE | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 800V | 5μA | 500ns | Standard | 125A | 1 | 3A | 30pF @ 4V 1MHz | 800V | 5μA @ 800V | 1.3V @ 3A | 3A | -55°C~150°C | ||||||||||||||||||||||||||||||||||
| BYG20DHM3_A/I | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-byg20je3tr-datasheets-4525.pdf | DO-214AC, SMA | 10 Weeks | DO-214AC (SMA) | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | Avalanche | 200V | 1μA @ 200V | 1.4V @ 1.5A | 1.5A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CMH04(TE12L,Q,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -40°C | RoHS Compliant | 2013 | SOD-128 | 12 Weeks | No | Single | 20A | Fast Recovery =< 500ns, > 200mA (Io) | 10μA | 200V | 20A | 200V | 35 ns | 35 ns | Standard | 200V | 1A | 10μA @ 200V | 980mV @ 1A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||
| SKL13BHR5G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-skl13bm4g-datasheets-7735.pdf | DO-214AA, SMB | 10 Weeks | DO-214AA (SMB) | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 30V | 200μA @ 30V | 390mV @ 1A | 1A | -55°C~125°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MBR5200VPTR-E1 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/diodesincorporated-mbr5200vpbtre1-datasheets-8602.pdf | DO-201AA, DO-27, Axial | 2 | 5 Weeks | EAR99 | LOW NOISE | not_compliant | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | O-PALF-W2 | SINGLE | ISOLATED | HIGH VOLTAGE POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500μA | Schottky | 200V | 5A | 100A | 1 | 5A | 200V | 500μA @ 200V | 950mV @ 5A | -65°C~150°C | |||||||||||||||||||||||||||||||||
| BYG10JHM3_A/H | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-byg10ye3tr-datasheets-7061.pdf | DO-214AC, SMA | 10 Weeks | DO-214AC (SMA) | Standard Recovery >500ns, > 200mA (Io) | 4μs | Avalanche | 600V | 1μA @ 600V | 1.15V @ 1.5A | 1.5A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CMSH1-100M BK PBFREE | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Bulk | 1 (Unlimited) | https://pdf.utmel.com/r/datasheets/centralsemiconductorcorp-cmsh140mtr13pbfree-datasheets-5522.pdf | DO-214AC, SMA | 26 Weeks | compliant | YES | 150°C | 1 | Rectifier Diodes | SINGLE | Fast Recovery =< 500ns, > 200mA (Io) | 100V | Schottky | 30A | 1A | 29pF @ 4V 1MHz | 100V | 500μA @ 100V | 850mV @ 1A | 1A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||
| B250Q-13-F | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/diodesincorporated-b260aq13f-datasheets-6025.pdf | DO-214AA, SMB | 2 | 19 Weeks | no | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY, LOW POWER LOSS | not_compliant | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 2 | 150°C | 40 | 1 | Not Qualified | R-PDSO-C2 | SINGLE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500μA | Schottky | 50V | 2A | 50A | 1 | 2A | 200pF @ 40V 1MHz | 50V | 500μA @ 50V | 700mV @ 2A | -65°C~150°C | |||||||||||||||||||||||||||||
| S3M-M3/9AT | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-s3de357t-datasheets-0694.pdf | DO-214AB, SMC | 2 | 11 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | Single | 30 | 1 | 1.15V | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 100A | 10μA | 2.5 μs | Standard | 1kV | 3A | 1 | 3A | 60pF @ 4V 1MHz | 1000V | 10μA @ 1000V | 1.15V @ 2.5A | -55°C~150°C | ||||||||||||||||||||||||||||||
| NRVBA160T3G-VF01 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tape & Reel (TR) | RoHS Compliant | /files/onsemiconductor-mbra160t3g-datasheets-3367.pdf | DO-214AC, SMA | 2 | 11 Weeks | EAR99 | FREE WHEELING DIODE | not_compliant | e3 | Tin (Sn) | YES | DUAL | J BEND | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | R-PDSO-J2 | SINGLE | POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 60V | 200μA | 60V | Schottky | 60A | 1 | 2.1A | 60V | 200μA @ 60V | 510mV @ 1A | 1A | -55°C~150°C | ||||||||||||||||||||||||||||||||||
| S3B-M3/9AT | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-s3de357t-datasheets-0694.pdf | DO-214AB, SMC | 2 | 11 Weeks | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 150°C | 30 | 1 | R-PDSO-C2 | SINGLE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 2.5 μs | Standard | 100V | 3A | 100A | 1 | 3A | 60pF @ 4V 1MHz | 100V | 10μA @ 100V | 1.15V @ 2.5A | -55°C~150°C | |||||||||||||||||||||||||||||||
| BYG10KHM3_A/H | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-byg10ye3tr-datasheets-7061.pdf | DO-214AC, SMA | 10 Weeks | DO-214AC (SMA) | Standard Recovery >500ns, > 200mA (Io) | 4μs | Avalanche | 800V | 1μA @ 800V | 1.15V @ 1.5A | 1.5A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NRVBA130LT3G-VF01 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | https://pdf.utmel.com/r/datasheets/onsemiconductor-nrvba130lt3gvf01-datasheets-2510.pdf | DO-214AC, SMA | 4 Weeks | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 30V | 1mA @ 30V | 410mV @ 1A | 1A | -55°C~125°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BYG10JHM3_A/I | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-byg10ye3tr-datasheets-7061.pdf | DO-214AC, SMA | 10 Weeks | DO-214AC (SMA) | Standard Recovery >500ns, > 200mA (Io) | 4μs | Avalanche | 600V | 1μA @ 600V | 1.15V @ 1.5A | 1.5A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SGL41-30HE3/97 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 125°C | -55°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-bym1330e396-datasheets-0135.pdf | DO-213AB, MELF | 2 | 8 Weeks | 2 | yes | EAR99 | LOW POWER LOSS, FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | END | WRAP AROUND | 250 | SGL41-30 | 2 | Single | 40 | 1 | Rectifier Diodes | 1A | 30A | 500μA | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500μA | 30V | 30A | Schottky | 30V | 1A | 1A | 110pF @ 4V 1MHz | 500μA @ 30V | 500mV @ 1A | -55°C~125°C | |||||||||||||||||||||||||
| BYG21KHM3_A/I | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-byg21km3tr-datasheets-6706.pdf | DO-214AC, SMA | 10 Weeks | DO-214AC (SMA) | Fast Recovery =< 500ns, > 200mA (Io) | 120ns | Avalanche | 800V | 1μA @ 800V | 1.6V @ 1.5A | 1.5A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| S3D-M3/9AT | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-s3de357t-datasheets-0694.pdf | DO-214AB, SMC | 2 | 11 Weeks | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 150°C | 30 | 1 | R-PDSO-C2 | SINGLE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 2.5 μs | Standard | 200V | 3A | 100A | 1 | 3A | 60pF @ 4V 1MHz | 200V | 10μA @ 200V | 1.15V @ 2.5A | -55°C~150°C | |||||||||||||||||||||||||||||||
| MUR190 A0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-mur190aa0g-datasheets-0218.pdf | DO-204AC, DO-15, Axial | 10 Weeks | DO-204AC (DO-15) | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | Standard | 15pF @ 4V 1MHz | 900V | 5μA @ 900V | 1.7V @ 1A | 1A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FR307G R0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/taiwansemiconductorcorporation-fr301gr0g-datasheets-6579.pdf | DO-201AD, Axial | 2 | 10 Weeks | EAR99 | HIGH RELIABILITY, LOW POWER LOSS | not_compliant | 8541.10.00.80 | e3 | Tin (Sn) | NO | WIRE | 150°C | 1 | O-PALF-W2 | SINGLE | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1000V | 5μA | 500ns | Standard | 125A | 1 | 3A | 30pF @ 4V 1MHz | 5μA @ 1000V | 1.3V @ 3A | 3A | -55°C~150°C | |||||||||||||||||||||||||||||||||||
| S3G-M3/9AT | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-s3de357t-datasheets-0694.pdf | DO-214AB, SMC | 2 | 11 Weeks | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 150°C | 30 | 1 | R-PDSO-C2 | SINGLE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 2.5 μs | Standard | 400V | 3A | 100A | 1 | 3A | 60pF @ 4V 1MHz | 400V | 10μA @ 400V | 1.15V @ 2.5A | -55°C~150°C | |||||||||||||||||||||||||||||||
| SBR8E45P5-7D | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SBR® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/diodesincorporated-sbr8e45p57-datasheets-1054.pdf | PowerDI™ 5 | 3 | 15 Weeks | EAR99 | FREE WHEELING DIODE | not_compliant | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | R-PDSO-F3 | SINGLE | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 350μA | Super Barrier | 45V | 8A | 140A | 1 | 8A | 45V | 350μA @ 45V | 510mV @ 8A | -55°C~150°C | |||||||||||||||||||||||||||||||
| SBR10E45P5-7D | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/diodesincorporated-sbr10e45p513-datasheets-0786.pdf | PowerDI™ 5 | 3 | 15 Weeks | yes | EAR99 | FREE WHEELING DIODE | not_compliant | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | R-PDSO-F3 | SINGLE | CATHODE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 280μA | Super Barrier | 45V | 10A | 275A | 1 | 45V | 280μA @ 45V | 470mV @ 10A | -55°C~150°C | ||||||||||||||||||||||||||||||||
| V8P6-M3/86A | Vishay Semiconductor Diodes Division | $0.48 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eSMP®, TMBS® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-v8p6hm3ai-datasheets-8015.pdf | TO-277, 3-PowerDFN | 3 | 10 Weeks | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | R-PDSO-F3 | SINGLE | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 600μA | TO-277A | Schottky | 60V | 4.2A | 140A | 1 | 60V | 600μA @ 60V | 610mV @ 8A | -40°C~150°C | ||||||||||||||||||||||||||||||
| ES01F | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/sanken-es01fv1-datasheets-3584.pdf | Axial | Lead Free | 2 | 12 Weeks | yes | EAR99 | 8541.10.00.70 | WIRE | NOT SPECIFIED | 2 | 140°C | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | O-XALF-W2 | SINGLE | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1.5 μs | Standard | 1.5kV | 500mA | 20A | 0.5A | 1500V | 10μA @ 1500V | 2V @ 500mA | -40°C~150°C | ||||||||||||||||||||||||||||||||||
| ES2J M4G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-es2gr5g-datasheets-0339.pdf | DO-214AA, SMB | 2 | 10 Weeks | EAR99 | 8541.10.00.80 | YES | DUAL | C BEND | 150°C | 1 | R-PDSO-C2 | SINGLE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 600V | 10μA | 35ns | Standard | 50A | 1 | 2A | 20pF @ 4V 1MHz | 600V | 10μA @ 600V | 1.7V @ 2A | 2A | -55°C~150°C |
