Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Configuration | Case Connection | Application | Natural Thermal Resistance | Speed | Diode Element Material | Power Dissipation-Max | Rep Pk Reverse Voltage-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | JEDEC-95 Code | Reverse Test Voltage | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
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VS-40HF120 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 190°C | -65°C | ROHS3 Compliant | 1998 | /files/vishaysemiconductordiodesdivision-vs40hf160-datasheets-1856.pdf | DO-203AB, DO-5, Stud | 20.02mm | 22.9mm | 17.35mm | 1 | 13 Weeks | Unknown | 2 | EAR99 | 8541.10.00.80 | UPPER | SOLDER LUG | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 40A | 1.3V | 595A | CATHODE | GENERAL PURPOSE | 0.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 595A | 9mA | 1.2kV | 595A | 1.2kV | Standard | 1.2kV | 40A | 1 | 1200V | 9mA @ 1200V | 1.3V @ 125A | -65°C~190°C | ||||||||||||||||||||||||||||||||||||
BAS20LT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | /files/onsemiconductor-bas21dw5t1g-datasheets-8723.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.01mm | 1.4mm | Lead Free | 3 | 4 Weeks | 3 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | Tin | No | 8541.10.00.70 | e3 | YES | DUAL | GULL WING | BAS20 | Single | 300mW | 1 | Rectifier Diodes | 200mA | 1.25V | 625mA | 100nA | Small Signal =< 200mA (Io), Any Speed | SILICON | 625mA | 200V | 625mA | 50 ns | 50 ns | Standard | 200V | 200mA | 0.2A | 5pF @ 0V 1MHz | 100nA @ 150V | 1.25V @ 200mA | 200mA DC | -55°C~150°C | |||||||||||||||||||||||||||||||||
1N914B-TP | Micro Commercial Components (MCC) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Reel (TR) | Not Applicable | RoHS Compliant | 2008 | /files/microcommercialco-1n914btp-datasheets-7358.pdf | DO-204AH, DO-35, Axial | 2 | 8 Weeks | yes | EAR99 | LOW LEAKAGE CURRENT | compliant | 8541.10.00.70 | e3 | Matte Tin (Sn) | NO | WIRE | NOT SPECIFIED | 1N914B | 2 | 150°C | NOT SPECIFIED | 1 | Not Qualified | O-XALF-W2 | SINGLE | ISOLATED | Small Signal =< 200mA (Io), Any Speed | SILICON | 0.5W | 100V | 4ns | Standard | 0.2A | 100V | 5μA @ 75V | 1V @ 100mA | 200mA | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||
C4D15120H | Cree/Wolfspeed | $12.87 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Z-Rec® | Through Hole | Tube | 1 (Unlimited) | TO-247-2 | 11 Weeks | TO-247-2 | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 1.2nF @ 0V 1MHz | 1200V | 200μA @ 1200V | 1.8V @ 15A | 39A DC | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
GP3D012A065A | SemiQ | $3.52 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Amp+™ | Through Hole | 1 (Unlimited) | ROHS3 Compliant | TO-220-2 | TO-220-2 | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 572pF @ 1V 1MHz | 650V | 30μA @ 650V | 1.5V @ 12A | 33A DC | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
UGF8JT-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ugf8jte345-datasheets-7304.pdf | TO-220-2 Full Pack, Isolated Tab | ITO-220AC | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | Standard | 600V | 30μA @ 600V | 1.75V @ 8A | 8A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SCS304AMC | ROHM Semiconductor | $2.39 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-scs304amc-datasheets-7346.pdf | TO-220-2 Full Pack | 2 | 12 Weeks | PD-CASE | NO | SINGLE | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | R-PSFM-T2 | SINGLE | ISOLATED | GENERAL PURPOSE | No Recovery Time > 500mA (Io) | 26W | 650V | 20μA | TO-220AC | 0ns | Silicon Carbide Schottky | 22A | 1 | 4A | 200pF @ 1V 1MHz | 650V | 20μA @ 650V | 1.5V @ 4A | 4A DC | 175°C Max | ||||||||||||||||||||||||||||||||||||||||||||||||
STTH12T06DI | STMicroelectronics | $0.83 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -40°C | SCHOTTKY | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stth12t06di-datasheets-7309.pdf | TO-220-2 Insulated, TO-220AC | 10.4mm | 15.9mm | 4.6mm | Lead Free | 2 | 11 Weeks | 2 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | STTH12T | 3 | Single | 1 | 12A | 2.55V | 90A | ISOLATED | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 40μA | 600V | 90A | 600V | 15 ns | 25 ns | Standard | 600V | 12A | 1 | 20μA @ 600V | 2.95V @ 12A | -40°C~175°C | ||||||||||||||||||||||||||||||||||||||
STPSC8H065DI | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -40°C | ROHS3 Compliant | /files/stmicroelectronics-stpsc8h065btr-datasheets-4999.pdf | TO-220-2 Insulated, TO-220AC | Lead Free | 2 | 14 Weeks | 2.299997g | EAR99 | NOT SPECIFIED | STPSC8H065 | Single | NOT SPECIFIED | 1 | R-PSFM-T2 | 8A | 1.98V | ISOLATED | POWER | Fast Recovery =< 500ns, > 200mA (Io) | 420A | 65μA | 650V | Silicon Carbide Schottky | 650V | 8A | 1 | 8A | 80μA @ 650V | 1.75V @ 8A | -40°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||
GP3D040A065U | SemiQ | $6.79 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Amp+™ | Through Hole | 1 (Unlimited) | ROHS3 Compliant | TO-247-3 | TO-247-3 | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 835pF @ 1V 1MHz | 650V | 50μA @ 650V | 1.7V @ 20A | 44A DC | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FESF16DT-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2016 | /files/vishaysemiconductordiodesdivision-fesb16dte345-datasheets-0098.pdf | TO-220-2 Full Pack, Isolated Tab | 10.26mm | 15.24mm | 4.83mm | Lead Free | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | 3 | Single | 1 | Rectifier Diodes | 16A | 975mV | 250A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 200V | 250A | 200V | 35 ns | 35 ns | Standard | 200V | 16A | 1 | 10μA @ 200V | 975mV @ 16A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||
FERD40H100SFP | STMicroelectronics | $1.39 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | EconoPACK™ 2 | Through Hole | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-ferd40h100sfp-datasheets-7312.pdf | TO-220-3 Full Pack | 15 Weeks | Standard Recovery >500ns, > 200mA (Io) | FERD (Field Effect Rectifier Diode) | 100V | 190μA @ 100V | 675mV @ 20A | 40A | 175°C Max | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SICRF5650 | SMC Diode Solutions |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 1 (Unlimited) | ROHS3 Compliant | TO-220-2 Full Pack, Isolated Tab | 12 Weeks | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 650V | 60μA @ 650V | 1.7V @ 5A | 5A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FCH20E10 | Kyocera International Inc. Electronic Components | $1.83 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 1 (Unlimited) | RoHS Compliant | TO-220-3 Full Pack, Isolated Tab | 14 Weeks | TO-220 Full-Mold | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 100V | 100μA @ 100V | 800mV @ 10A | 20A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BYV29-400-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-byv29400e345-datasheets-7319.pdf | TO-220-2 | 2 | 18 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE | Tin | unknown | 8541.10.00.80 | e3 | NOT SPECIFIED | BYV29-400 | 3 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | 8A | 1.4V | 110A | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 400V | 110A | 400V | 50 ns | 50 ns | Standard | 400V | 8A | 1 | 8A | 10μA @ 400V | 1.25V @ 8A | -40°C~150°C | ||||||||||||||||||||||||||||||||||
MSC030SDA120K | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | RoHS Compliant | TO-220-2 | 13 Weeks | TO-220 [K] | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 1200V | 1.8V @ 5V | 30A DC | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MSC050SDA120S | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tube | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-msc050sda120s-datasheets-7325.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 15 Weeks | D3Pak | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 1200V | 50A DC | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SCS308AJTLL | ROHM Semiconductor | $3.64 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-scs308ajtll-datasheets-7206.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 20 Weeks | LOW LEAKAGE CURRENT, PD-CASE | YES | SINGLE | GULL WING | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | R-PSSO-G2 | SINGLE | CATHODE | GENERAL PURPOSE | No Recovery Time > 500mA (Io) | 62W | 650V | 40μA | 0ns | Silicon Carbide Schottky | 57A | 1 | 8A | 400pF @ 1V 1MHz | 650V | 40μA @ 650V | 1.5V @ 8A | 8A DC | 175°C Max | |||||||||||||||||||||||||||||||||||||||||||||||
SCS304AHGC9 | ROHM Semiconductor | $4.27 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 1 (Unlimited) | RoHS Compliant | TO-220-2 | 2 | 12 Weeks | EAR99 | PD-CASE | compliant | NO | SINGLE | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | R-PSFM-T2 | SINGLE | CATHODE | GENERAL PURPOSE | No Recovery Time > 500mA (Io) | 34W | 650V | 20μA | TO-220AC | 0ns | Silicon Carbide Schottky | 22A | 1 | 4A | 200pF @ 1V 1MHz | 650V | 20μA @ 650V | 1.5V @ 4A | 4A DC | 175°C Max | |||||||||||||||||||||||||||||||||||||||||||||||
STPSC10H065D | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -40°C | ROHS3 Compliant | /files/stmicroelectronics-stpsc10h065di-datasheets-1216.pdf | TO-220-2 | Lead Free | 2 | 14 Weeks | No SVHC | 2 | ACTIVE (Last Updated: 7 months ago) | EAR99 | 8541.10.00.80 | e3 | Matte Tin (Sn) - annealed | NOT SPECIFIED | STPSC10 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | 10A | 1.75V | 90A | 100μA | CATHODE | POWER | No Recovery Time > 500mA (Io) | 100μA | 650V | 470A | 0ns | Silicon Carbide Schottky | 650V | 10A | 1 | 480pF @ 0V 1MHz | 100μA @ 650V | 1.75V @ 10A | -40°C~175°C | |||||||||||||||||||||||||||||||||||||||
MSC030SDA120S | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tube | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-msc050sda120s-datasheets-7325.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 15 Weeks | D3Pak | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 1200V | 30A DC | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RFUH20TF6SFHC9 | ROHM Semiconductor | $1.54 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Cut Tape (CT) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-rfuh20tf6sfhc9-datasheets-7340.pdf | TO-220-2 Full Pack | 2 | 12 Weeks | NO | SINGLE | 150°C | 1 | R-PSFM-T2 | SINGLE | ISOLATED | SUPER FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 600V | 10μA | 600V | 35ns | Standard | 100A | 1 | 20A | 600V | 10μA @ 600V | 2.8V @ 20A | 20A | 150°C Max | ||||||||||||||||||||||||||||||||||||||||||||||||||
GP3D012A065B | SemiQ | $3.55 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Amp+™ | Through Hole | 1 (Unlimited) | ROHS3 Compliant | TO-247-2 | TO-247-2 | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 572pF @ 1V 1MHz | 650V | 30μA @ 650V | 1.5V @ 12A | 33A DC | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
VS-19TQ015-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs19tq015m3-datasheets-7343.pdf | TO-220-2 | 12 Weeks | TO-220AC | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 2000pF @ 5V 1MHz | 15V | 10.5mA @ 15V | 460mV @ 38A | 19A | -55°C~125°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SICR6650 | SMC Diode Solutions |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 1 (Unlimited) | ROHS3 Compliant | TO-220-2 | 12 Weeks | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 150pF @ 5V 1MHz | 650V | 50μA @ 650V | 1.8V @ 6A | 6A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MBRB10H100-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount, Through Hole | Surface Mount | Tube | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2008 | /files/vishaysemiconductordiodesdivision-mbr10h150cte345-datasheets-6050.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.4394mm | 9.144mm | 4.826mm | Lead Free | 2 | 22 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | MBRB10H100 | 3 | Common Cathode | 1 | Rectifier Diodes | 10A | 880mV | 250A | 4.5μA | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 4.5μA | 100V | 250A | Schottky | 100V | 10A | 1 | 4.5μA @ 100V | 770mV @ 10A | -65°C~175°C | |||||||||||||||||||||||||||||||||||
RFUH5TF6SFHC9 | ROHM Semiconductor | $1.96 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Cut Tape (CT) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-rfuh5tf6sfhc9-datasheets-7247.pdf | TO-220-2 Full Pack | 2 | 12 Weeks | NO | SINGLE | 150°C | 1 | R-PSFM-T2 | SINGLE | ISOLATED | SUPER FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 600V | 10μA | TO-220AC | 600V | 25ns | Standard | 30A | 1 | 5A | 600V | 10μA @ 600V | 2.8V @ 5A | 5A | 150°C Max | |||||||||||||||||||||||||||||||||||||||||||||||||
FESF8JT-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-fes8dte345-datasheets-0214.pdf | TO-220-2 Full Pack, Isolated Tab | 2 | 20 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | 3 | Single | 1 | Rectifier Diodes | 8A | 1.5V | 125A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 600V | 125A | 600V | 50 ns | 50 ns | Standard | 600V | 8A | 1 | 8A | 10μA @ 600V | 1.5V @ 8A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||
STPSC8H065D | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -40°C | ROHS3 Compliant | /files/stmicroelectronics-stpsc8h065btr-datasheets-4999.pdf | TO-220-2 | Lead Free | 2 | 14 Weeks | No SVHC | 2 | ACTIVE (Last Updated: 7 months ago) | EAR99 | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | STPSC8H065 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | 8A | 1.75V | CATHODE | POWER | No Recovery Time > 500mA (Io) | 75A | 80μA | 650V | 0ns | Silicon Carbide Schottky | 650V | 8A | 1 | 8A | 414pF @ 0V 1MHz | 80μA @ 650V | 1.75V @ 8A | -40°C~175°C | ||||||||||||||||||||||||||||||||||||||||
GP3D010A065B | SemiQ | $2.83 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Amp+™ | Through Hole | 1 (Unlimited) | ROHS3 Compliant | TO-247-2 | TO-247-2 | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 419pF @ 1V 1MHz | 650V | 25μA @ 650V | 1.6V @ 10A | 24A DC | -55°C~175°C |
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