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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Interface | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Max Output Current | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Configuration | Case Connection | Application | Number of Outputs | Speed | Output Configuration | Fault Protection | Diode Element Material | Power Dissipation-Max | Rep Pk Reverse Voltage-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | JEDEC-95 Code | Reverse Test Voltage | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Reverse Voltage (DC) | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
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| SCS210AMC | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -35°C | ROHS3 Compliant | 2000 | /files/rohm-scs210amc-datasheets-0085.pdf | TO-220-2 | Lead Free | 2 | 12 Weeks | No SVHC | 2 | On/Off | EAR99 | 34W | NOT SPECIFIED | SCS210 | Single | NOT SPECIFIED | 78W | 1 | Rectifier Diodes | 2A | 10A | 1.35V | ISOLATED | GENERAL PURPOSE | 1 | No Recovery Time > 500mA (Io) | High Side | Over Temperature, Reverse Current | 40A | 2μA | 650V | 150A | 0ns | Silicon Carbide Schottky | 10A | 1 | 650V | 365pF @ 1V 1MHz | 200μA @ 600V | 1.55V @ 10A | 10A DC | 175°C Max | |||||||||||||||||||||||||||||||||||||||||
| FSF05A20 | Kyocera International Inc. Electronic Components | $0.60 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 1 (Unlimited) | RoHS Compliant | TO-220-2 Full Pack, Isolated Tab | 14 Weeks | TO-220-2 Full-Mold | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | Standard | 200V | 20μA @ 200V | 980mV @ 5A | 5A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| UGB8DT-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2013 | /files/vishaysemiconductordiodesdivision-ug8dte345-datasheets-6827.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 20 Weeks | 3 | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 245 | UGB8D | 3 | Common Cathode | 30 | 1 | Rectifier Diodes | R-PSSO-G2 | 8A | 1.2V | 150A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 200V | 150A | 200V | 30 ns | 30 ns | Standard | 200V | 8A | 1 | 8A | 10μA @ 200V | 1V @ 8A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||
| DPG60I400HA | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFRED™ | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2002 | /files/ixys-dpg60i400ha-datasheets-7288.pdf | TO-247-2 | 2 | 20 Weeks | 6.500007g | No SVHC | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE | unknown | 8541.10.00.80 | e3 | PURE TIN | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | 60A | 1.22V | 450A | 1μA | CATHODE | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 600A | 400V | 450A | 45 ns | 45 ns | Standard | 400V | 60A | 1 | 1μA @ 400V | 1.47V @ 60A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||
| FFSP0865B | ON Semiconductor | $2.60 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 1 (Unlimited) | ROHS3 Compliant | TO-220-2 | 10 Weeks | yes | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 336pF @ 1V 100kHz | 650V | 40μA @ 650V | 1.7V @ 8A | 10.1A DC | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-30ETU12-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRED Pt® | Through Hole | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs30etu12m3-datasheets-7290.pdf | TO-220-2 | 14 Weeks | TO-220AC | Fast Recovery =< 500ns, > 200mA (Io) | 220ns | Standard | 1200V | 145μA @ 1.2kV | 2.68V @ 30A | 30A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RF1005TF6SFHC9 | ROHM Semiconductor | $2.02 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Cut Tape (CT) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-rf1005tf6sfhc9-datasheets-7233.pdf | TO-220-2 Full Pack | 12 Weeks | Fast Recovery =< 500ns, > 200mA (Io) | 40ns | Standard | 600V | 10μA @ 600V | 1.7V @ 10A | 10A | 150°C Max | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CDBJFSC3650-G | Comchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/comchiptechnology-cdbjfsc3650g-datasheets-7294.pdf | TO-220-2 Full Pack | 12 Weeks | NOT SPECIFIED | NOT SPECIFIED | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 190pF @ 0V 1MHz | 650V | 100μA @ 650V | 1.7V @ 3A | 3A DC | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSEP15-06A | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFRED™ | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | AVALANCHE | ROHS3 Compliant | 2000 | /files/ixys-dsep1506a-datasheets-7236.pdf | TO-220-2 | 10.66mm | 16.51mm | 4.82mm | Lead Free | 2 | 28 Weeks | No SVHC | 2 | yes | EAR99 | SNUBBER DIODE, FREE WHEELING DIODE | No | 8541.10.00.80 | 3 | Single | 1 | Rectifier Diodes | 15A | 2.04V | 110A | CATHODE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 90W | 110A | 100μA | 600V | 110A | 600V | 35 ns | 35 ns | Standard | 600V | 15A | 1 | 100μA @ 600V | 2.04V @ 15A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||
| SICR6650 | SMC Diode Solutions |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 1 (Unlimited) | ROHS3 Compliant | TO-220-2 | 12 Weeks | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 150pF @ 5V 1MHz | 650V | 50μA @ 650V | 1.8V @ 6A | 6A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MBRB10H100-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount, Through Hole | Surface Mount | Tube | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2008 | /files/vishaysemiconductordiodesdivision-mbr10h150cte345-datasheets-6050.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.4394mm | 9.144mm | 4.826mm | Lead Free | 2 | 22 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | MBRB10H100 | 3 | Common Cathode | 1 | Rectifier Diodes | 10A | 880mV | 250A | 4.5μA | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 4.5μA | 100V | 250A | Schottky | 100V | 10A | 1 | 4.5μA @ 100V | 770mV @ 10A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||
| RFUH5TF6SFHC9 | ROHM Semiconductor | $1.96 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Cut Tape (CT) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-rfuh5tf6sfhc9-datasheets-7247.pdf | TO-220-2 Full Pack | 2 | 12 Weeks | NO | SINGLE | 150°C | 1 | R-PSFM-T2 | SINGLE | ISOLATED | SUPER FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 600V | 10μA | TO-220AC | 600V | 25ns | Standard | 30A | 1 | 5A | 600V | 10μA @ 600V | 2.8V @ 5A | 5A | 150°C Max | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FESF8JT-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-fes8dte345-datasheets-0214.pdf | TO-220-2 Full Pack, Isolated Tab | 2 | 20 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | 3 | Single | 1 | Rectifier Diodes | 8A | 1.5V | 125A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 600V | 125A | 600V | 50 ns | 50 ns | Standard | 600V | 8A | 1 | 8A | 10μA @ 600V | 1.5V @ 8A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||
| FCHS20A12 | Kyocera International Inc. Electronic Components |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 1 (Unlimited) | RoHS Compliant | TO-220-3 Full Pack, Isolated Tab | 14 Weeks | TO-220 Full-Mold | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 120V | 100μA @ 120V | 890mV @ 10A | 20A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-HFA15TB60-1-M3 | Vishay Semiconductor Diodes Division | $1.05 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFRED® | Through Hole | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vshfa15tb60sm3-datasheets-1404.pdf | TO-220-3 | 13 Weeks | TO-220AB | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | Standard | 600V | 10μA @ 600V | 2V @ 30A | 15A DC | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FFSP0665B | ON Semiconductor | $2.51 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 1 (Unlimited) | ROHS3 Compliant | TO-220-2 | 10 Weeks | yes | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 259pF @ 1V 100kHz | 650V | 40μA @ 650V | 1.7V @ 6A | 8A DC | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SICR10650CT | SMC Diode Solutions | $2.76 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 1 (Unlimited) | ROHS3 Compliant | TO-220-3 | 12 Weeks | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 650V | 60μA @ 650V | 1.7V @ 5A | 5A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RHRP15120-F102 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | /files/onsemiconductor-rhrp15120-datasheets-7311.pdf | TO-220-2 | 10 Weeks | 2.16g | ACTIVE (Last Updated: 2 days ago) | yes | Single | Fast Recovery =< 500ns, > 200mA (Io) | 200A | 1.2kV | 75ns | Standard | 1200V | 100μA @ 1200V | 3.2V @ 15A | 15A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STPSC6H065DI | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -40°C | ROHS3 Compliant | /files/stmicroelectronics-stpsc6h065di-datasheets-7143.pdf | TO-220-2 Insulated, TO-220AC | 10.4mm | 15.9mm | 4.6mm | Lead Free | 2 | 14 Weeks | 2.299997g | 2 | EAR99 | 8541.10.00.80 | NOT SPECIFIED | STPSC6 | Single | NOT SPECIFIED | 1 | 6A | 1.98V | ISOLATED | POWER | Fast Recovery =< 500ns, > 200mA (Io) | 400A | 50μA | 650V | 400A | Silicon Carbide Schottky | 650V | 6A | 1 | 6A | 60μA @ 650V | 1.75V @ 6A | -40°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||
| VS-HFA16TB120S-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFRED® | Surface Mount | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vshfa16tb120sm3-datasheets-7208.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 13 Weeks | TO-263AB (D2PAK) | Fast Recovery =< 500ns, > 200mA (Io) | 135ns | Standard | 1200V | 20μA @ 1200V | 3.93V @ 32A | 16A DC | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CDBJSC3650-G | Comchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/comchiptechnology-cdbjsc3650g-datasheets-7148.pdf | TO-220-2 Full Pack | 12 Weeks | NOT SPECIFIED | NOT SPECIFIED | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 190pF @ 0V 1MHz | 650V | 100μA @ 650V | 1.7V @ 3A | 3A DC | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BYWF29-200-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -65°C | SCHOTTKY | ROHS3 Compliant | /files/vishaysemiconductordiodesdivision-byw29200e345-datasheets-6785.pdf | TO-220-2 Full Pack, Isolated Tab | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE | Tin | No | 8541.10.00.80 | e3 | 3 | Single | 1 | Rectifier Diodes | 8A | 1.3V | 100A | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 200V | 100A | 200V | 25 ns | 25 ns | Standard | 200V | 8A | 1 | 8A | 10μA @ 200V | 1.3V @ 20A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||
| SICR5650 | SMC Diode Solutions |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 1 (Unlimited) | ROHS3 Compliant | TO-220-2 | 12 Weeks | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 650V | 60μA @ 650V | 1.7V @ 5A | 5A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RFN20TF6SFHC9 | ROHM Semiconductor | $2.02 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-rfn20tf6sfhc9-datasheets-7217.pdf | TO-220-2 Full Pack | 12 Weeks | 20A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | Standard | 600V | 10μA @ 600V | 1.55V @ 20A | 150°C Max | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CDBJFSC5650-G | Comchip Technology | $2.57 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | /files/comchiptechnology-cdbjfsc5650g-datasheets-7155.pdf | TO-220-2 Full Pack | 12 Weeks | NOT SPECIFIED | NOT SPECIFIED | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 430pF @ 0V 1MHz | 650V | 100μA @ 650V | 1.7V @ 5A | 5A DC | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| QH05TZ600 | Power Integrations |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Qspeed™ | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | SCHOTTKY | RoHS Compliant | 2011 | /files/powerintegrations-qh05tz600-datasheets-7220.pdf | TO-220-2 | 2 | 4 Weeks | 2 | EAR99 | No | 8541.10.00.80 | e3 | MATTE TIN | 3 | Single | 36.8W | 1 | 5A | 50A | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 250μA | 600V | 50A | 600V | 10 ns | 10 ns | Standard | 600V | 5A | 1 | 5A | 17pF @ 10V 1MHz | 250μA @ 600V | 3.1V @ 5A | 150°C Max | ||||||||||||||||||||||||||||||||||||||||||||
| STPSC6H065D | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -40°C | ROHS3 Compliant | /files/stmicroelectronics-stpsc6h065di-datasheets-7143.pdf | TO-220-2 | Lead Free | 2 | 14 Weeks | No SVHC | 2 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | 8541.10.00.80 | e3 | Matte Tin (Sn) - annealed | STPSC6 | Single | 1 | Rectifier Diodes | 6A | 1.75V | 60A | 60μA | CATHODE | POWER | No Recovery Time > 500mA (Io) | 60μA | 650V | 400A | 0ns | Silicon Carbide Schottky | 650V | 6A | 1 | 6A | 300pF @ 0V 1MHz | 60μA @ 650V | 1.75V @ 6A | -40°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||
| D6015L52TP | Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 1 (Unlimited) | ROHS3 Compliant | 2015 | /files/littelfuseinc-d4020ltp-datasheets-1450.pdf | TO-220-3 Isolated Tab | 16 Weeks | Standard Recovery >500ns, > 200mA (Io) | 4μs | Standard | 600V | 10μA @ 600V | 1.6V @ 15A | 9.5A | -40°C~125°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CDBDSC5650-G | Comchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tube | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/comchiptechnology-cdbdsc5650g-datasheets-7169.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | NOT SPECIFIED | NOT SPECIFIED | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 424pF @ 0V 1MHz | 650V | 100μA @ 650V | 1.7V @ 5A | 21.5A DC | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STBR3008WY | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stbr3008wy-datasheets-7173.pdf | DO-247-2 (Straight Leads) | 11 Weeks | Standard Recovery >500ns, > 200mA (Io) | Standard | 800V | 2μA @ 800V | 1.1V @ 30A | 30A | -40°C~175°C |
