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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | Flammability Rating | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | JESD-30 Code | Supplier Device Package | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Configuration | Case Connection | Application | Natural Thermal Resistance | Speed | Diode Element Material | Rep Pk Reverse Voltage-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | JEDEC-95 Code | Reverse Test Voltage | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
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| CDBJFSC5650-G | Comchip Technology | $2.57 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | /files/comchiptechnology-cdbjfsc5650g-datasheets-7155.pdf | TO-220-2 Full Pack | 12 Weeks | NOT SPECIFIED | NOT SPECIFIED | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 430pF @ 0V 1MHz | 650V | 100μA @ 650V | 1.7V @ 5A | 5A DC | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| QH05TZ600 | Power Integrations |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Qspeed™ | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | SCHOTTKY | RoHS Compliant | 2011 | /files/powerintegrations-qh05tz600-datasheets-7220.pdf | TO-220-2 | 2 | 4 Weeks | 2 | EAR99 | No | 8541.10.00.80 | e3 | MATTE TIN | 3 | Single | 36.8W | 1 | 5A | 50A | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 250μA | 600V | 50A | 600V | 10 ns | 10 ns | Standard | 600V | 5A | 1 | 5A | 17pF @ 10V 1MHz | 250μA @ 600V | 3.1V @ 5A | 150°C Max | ||||||||||||||||||||||||||||||||||||||
| STPSC6H065D | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -40°C | ROHS3 Compliant | /files/stmicroelectronics-stpsc6h065di-datasheets-7143.pdf | TO-220-2 | Lead Free | 2 | 14 Weeks | No SVHC | 2 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | 8541.10.00.80 | e3 | Matte Tin (Sn) - annealed | STPSC6 | Single | 1 | Rectifier Diodes | 6A | 1.75V | 60A | 60μA | CATHODE | POWER | No Recovery Time > 500mA (Io) | 60μA | 650V | 400A | 0ns | Silicon Carbide Schottky | 650V | 6A | 1 | 6A | 300pF @ 0V 1MHz | 60μA @ 650V | 1.75V @ 6A | -40°C~175°C | |||||||||||||||||||||||||||||||||||||||
| D6015L52TP | Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 1 (Unlimited) | ROHS3 Compliant | 2015 | /files/littelfuseinc-d4020ltp-datasheets-1450.pdf | TO-220-3 Isolated Tab | 16 Weeks | Standard Recovery >500ns, > 200mA (Io) | 4μs | Standard | 600V | 10μA @ 600V | 1.6V @ 15A | 9.5A | -40°C~125°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FESB16JT-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-fesb16dte345-datasheets-0098.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 20 Weeks | Unknown | 2 | UL94 V-0 | No | Common Cathode | TO-263AB | 16A | 1.5V | 250A | Fast Recovery =< 500ns, > 200mA (Io) | 250A | 10μA | 600V | 250A | 600V | 50 ns | 50 ns | Standard | 600V | 16A | 145pF @ 4V 1MHz | 600V | 10μA @ 600V | 1.5V @ 16A | 16A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||
| STPSC4H065DI | STMicroelectronics | $2.28 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -40°C | ROHS3 Compliant | /files/stmicroelectronics-stpsc4h065btr-datasheets-4376.pdf | TO-220-2 Insulated, TO-220AC | 10.4mm | 15.9mm | 4.6mm | Lead Free | 2 | 14 Weeks | 2.299997g | 2 | EAR99 | NOT SPECIFIED | STPSC4 | Single | NOT SPECIFIED | 1 | 4A | 1.98V | ISOLATED | POWER | Fast Recovery =< 500ns, > 200mA (Io) | 200A | 35μA | 650V | Silicon Carbide Schottky | 650V | 4A | 1 | 4A | 40μA @ 650V | 1.75V @ 4A | -40°C~175°C | |||||||||||||||||||||||||||||||||||||||||||
| VS-60APU06-N3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRED Pt® | Through Hole | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2017 | /files/vishaysemiconductordiodesdivision-vs60apu06n3-datasheets-7116.pdf | TO-247-3 | 3 | 14 Weeks | EAR99 | unknown | 8541.10.00.80 | SINGLE | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | Rectifier Diodes | R-PSFM-T3 | 60A | SINGLE | CATHODE | ULTRA FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 50μA | TO-247AC | 81 ns | Standard | 600V | 60A | 1 | 50μA @ 600V | 1.68V @ 60A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||
| FSU08D60 | Kyocera International Inc. Electronic Components | $2.44 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 1 (Unlimited) | RoHS Compliant | TO-220-2 Full Pack, Isolated Tab | 14 Weeks | TO-220-2 Full-Mold | Fast Recovery =< 500ns, > 200mA (Io) | 45ns | Standard | 600V | 20μA @ 600V | 2.3V @ 8A | 8A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-E5PX3012L-N3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRED Pt® | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vse5px3012ln3-datasheets-7121.pdf | TO-247-2 | 14 Weeks | TO-247AD | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | Standard | 1200V | 50μA @ 1200V | 3.15V @ 30A | 30A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RHRP30120-F102 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | /files/onsemiconductor-rhrp30120f102-datasheets-7070.pdf | TO-220-2 | 4 Weeks | 2.16g | ACTIVE (Last Updated: 2 days ago) | yes | Single | Fast Recovery =< 500ns, > 200mA (Io) | 300A | 1.2kV | 85ns | Standard | 1200V | 250μA @ 1200V | 3.2V @ 30A | 30A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-20ETS08-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-vs20ets12m3-datasheets-1329.pdf | TO-220-2 | 2 | 12 Weeks | 2 | EAR99 | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | NOT APPLICABLE | 20ETS08 | 150°C | Single | NOT APPLICABLE | 1 | 20A | CATHODE | HIGH VOLTAGE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 100μA | Standard | 800V | 20A | 1 | 100μA @ 800V | 1.1V @ 20A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||
| 90SQ035 | SMC Diode Solutions | $0.65 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | DO-201AD, Axial | 12 Weeks | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 900pF @ 5V 1MHz | 35V | 1.75mA @ 35V | 570mV @ 18A | 9A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FSU05D60 | Kyocera International Inc. Electronic Components | $1.07 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 1 (Unlimited) | RoHS Compliant | TO-220-2 Full Pack, Isolated Tab | 14 Weeks | TO-220-2 Full-Mold | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | Standard | 600V | 10μA @ 600V | 2.3V @ 5A | 5A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IDD05SG60CXTMA1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolSiC™+ | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-idd05sg60cxtma1-datasheets-7078.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 110pF @ 1V 1MHz | 600V | 30μA @ 600V | 2.3V @ 5A | 5A DC | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SICRF10650CT | SMC Diode Solutions |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 1 (Unlimited) | ROHS3 Compliant | TO-220-3 Full Pack, Isolated Tab | 12 Weeks | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 650V | 60μA @ 650V | 1.7V @ 5A | 5A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FFSB0865B-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/onsemiconductor-ffsb0865bf085-datasheets-6980.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10 Weeks | yes | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 336pF @ 1V 100kHz | 650V | 40μA @ 650V | 1.7V @ 8A | 10.1A DC | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-150KS10 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 200°C | -40°C | ROHS3 Compliant | 2008 | /files/vishaysemiconductordiodesdivision-vs150k60a-datasheets-1566.pdf | B-42 | 1 | 13 Weeks | Unknown | 42 | EAR99 | FREE WHEELING DIODE | 8541.10.00.80 | UPPER | SOLDER LUG | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 150A | 1.33V | 3.74kA | CATHODE | GENERAL PURPOSE | 0.1 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 35mA | 100V | 100V | Standard | 100V | 150A | 1 | 35mA @ 100V | 1.33V @ 471A | -40°C~200°C | |||||||||||||||||||||||||||||||||||||||||
| VS-E5TH3012-N3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRED Pt® | Through Hole | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vse5th3012n3-datasheets-7085.pdf | TO-220-2 | 14 Weeks | TO-220AC | Fast Recovery =< 500ns, > 200mA (Io) | 113ns | Standard | 1200V | 50μA @ 1200V | 2.3V @ 30A | 30A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CDBDSC3650-G | Comchip Technology | $1.27 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tube | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/comchiptechnology-cdbdsc3650g-datasheets-7089.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | NOT SPECIFIED | NOT SPECIFIED | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 181pF @ 0V 1MHz | 650V | 100μA @ 650V | 1.7V @ 3A | 11A DC | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STPS8H100FP | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | /files/stmicroelectronics-stps8h100gtr-datasheets-7193.pdf | TO-220-2 Full Pack, Isolated Tab | 10.4mm | 16.4mm | 4.6mm | 2 | 15 Weeks | 2 | ACTIVE (Last Updated: 7 months ago) | EAR99 | LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) - annealed | STPS8H | 2 | Single | 1 | Rectifier Diodes | 8A | 810mV | 250A | 4.5μA | HIGH VOLTAGE POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 4.5μA | 100V | 250A | Schottky | 100V | 8A | 1 | 8A | 4.5μA @ 100V | 710mV @ 8A | 175°C Max | ||||||||||||||||||||||||||||||||||||||
| SICRF6650 | SMC Diode Solutions | $2.14 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 1 (Unlimited) | ROHS3 Compliant | TO-220-2 Full Pack, Isolated Tab | 12 Weeks | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 150pF @ 5V 1MHz | 650V | 50μA @ 650V | 1.8V @ 6A | 6A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RF505TF6SFHC9 | ROHM Semiconductor | $1.71 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Cut Tape (CT) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-rf505tf6sfhc9-datasheets-7098.pdf | TO-220-2 Full Pack | 2 | 12 Weeks | NO | SINGLE | 150°C | 1 | R-PSFM-T2 | SINGLE | ISOLATED | SUPER FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 600V | 10μA | TO-220AC | 600V | 30ns | Standard | 80A | 1 | 5A | 600V | 10μA @ 600V | 1.7V @ 5A | 5A | 150°C Max | |||||||||||||||||||||||||||||||||||||||||||||||||
| VS-20ETS08S-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | ROHS3 Compliant | 2017 | /files/vishaysemiconductordiodesdivision-vs20ets12sm3-datasheets-7543.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | EAR99 | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | 245 | 150°C | 30 | 1 | R-PSSO-G2 | SINGLE | CATHODE | HIGH VOLTAGE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | Standard | 800V | 20A | 300A | 1 | 800V | 100μA @ 800V | 1.1V @ 20A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||
| FCF16A20 | Kyocera International Inc. Electronic Components |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 1 (Unlimited) | RoHS Compliant | TO-220-3 Full Pack, Isolated Tab | 14 Weeks | TO-220 Full-Mold | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | Standard | 200V | 25μA @ 200V | 980mV @ 8A | 16A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VB20100S-E3/4W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TMBS® | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vb20100se38w-datasheets-7106.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 14 Weeks | 3 | No | VB20100S | Single | TO-263AB | 20A | 900mV | 250A | 500μA | Fast Recovery =< 500ns, > 200mA (Io) | 500μA | 100V | 250A | Schottky | 100V | 20A | 100V | 500μA @ 100V | 900mV @ 20A | 20A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IDB06S60C | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolSiC™+ | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-idb06s60c-datasheets-7058.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 280pF @ 1V 1MHz | 600V | 80μA @ 600V | 1.7V @ 6A | 6A DC | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IDW10S120FKSA1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolSiC™+ | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-idw10s120fksa1-datasheets-7001.pdf | TO-247-3 | PG-TO247-3-41 | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 580pF @ 1V 1MHz | 1.2V | 240μA @ 1.2V | 1.8V @ 10A | 10A DC | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NS8KT-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-ns8gte345-datasheets-6732.pdf | TO-220-2 | 2 | 10 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | 3 | Single | 1 | Rectifier Diodes | 8A | 1.1V | 125A | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 800V | 125A | 800V | Standard | 800V | 8A | 1 | 8A | 10μA @ 800V | 1.1V @ 8A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||
| F1857D1200 | Sensata-Crydom |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | Bulk | Not Applicable | 125°C | -40°C | RoHS Compliant | /files/sensata-f1857d1200-datasheets-0001.pdf | 1.2kV | 55A | Module | Lead Free | No SVHC | 2 | Single | 55A | Standard Recovery >500ns, > 200mA (Io) | 1.2kV | 1.5kA | Standard | 1.2kV | 55A | 1200V | 1.4V @ 165A | 55A DC | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MSRF1560G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SWITCHMODE™ | Through Hole | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2008 | /files/onsemiconductor-msr1560g-datasheets-2015.pdf | TO-220-2 Full Pack | Lead Free | 2 | 2 Weeks | 2 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Tin (Sn) | NO | 2 | Single | 1 | Rectifier Diodes | 15A | 1.8V | 100A | ISOLATED | SOFT RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100A | 15μA | 600V | 100A | 600V | 45 ns | 45 ns | Standard | 600V | 15A | 1 | 15μA @ 600V | 1.8V @ 15A | -65°C~150°C |
