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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | Operating Mode | Height Seated (Max) | RoHS Status | Published | Datasheet | Package / Case | Length | Width | Operating Supply Voltage | Max Supply Current | Number of Terminations | Factory Lead Time | Weight | Number of Pins | Density | Pbfree Code | Number of Ports | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Surface Mount | Voltage - Supply | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Temperature Grade | Operating Temperature (Max) | Operating Temperature (Min) | Supply Voltage-Max (Vsup) | Supply Voltage-Min (Vsup) | Time@Peak Reflow Temperature-Max (s) | Subcategory | Power Supplies | Supply Current-Max | Qualification Status | JESD-30 Code | Supplier Device Package | Screening Level | Memory Size | Memory Type | Data Bus Width | Output Characteristics | Access Time | Programming Voltage | Clock Frequency | Address Bus Width | Memory Format | Memory Interface | Organization | Memory Width | Write Cycle Time - Word, Page | Memory Density | Parallel/Serial | Standby Current-Max | Word Size | Access Time (Max) | Sync/Async | I/O Type | Refresh Cycles | Sequential Burst Length | Interleaved Burst Length | Standby Voltage-Min | Memory IC Type |
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| 7134LA25JGI8 | Renesas Electronics America Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 3 (168 Hours) | SRAM - Dual Port, Asynchronous | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/renesaselectronicsamericainc-7134sa55jg-datasheets-2772.pdf | 52-LCC (J-Lead) | 13 Weeks | 4.5V~5.5V | IDT7134 | 32Kb 4K x 8 | Volatile | SRAM | Parallel | 25ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MTFC16GAPALBH-IT TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | e•MMC™ | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 3 (168 Hours) | FLASH - NAND | ROHS3 Compliant | 153-TFBGA | 8 Weeks | 2.7V~3.6V | 128Gb 16G x 8 | Non-Volatile | FLASH | MMC | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IS61LPS51218A-200TQLI | ISSI, Integrated Silicon Solution Inc |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TA | Tray | 2 (1 Year) | SRAM - Synchronous, SDR | 1.6mm | ROHS3 Compliant | 100-LQFP | 3.3V | 100 | 12 Weeks | 100 | 9 Mb | yes | 2 | PIPELINED ARCHITECTURE | No | 1 | 275mA | e3 | Matte Tin (Sn) - annealed | YES | 3.135V~3.465V | QUAD | 260 | 3.3V | 0.65mm | 100 | 3.465V | 3.135V | 40 | 9Mb 512K x 18 | Volatile | 3-STATE | 3.1ns | 200MHz | 19b | SRAM | Parallel | 18 | 0.105A | 18b | Synchronous | COMMON | 3.14V | |||||||||||||||||||||||||||||||||||||||
| S29GL01GT11TFB020 | Cypress Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 3 (168 Hours) | CMOS | ASYNCHRONOUS | 1.2mm | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/cypresssemiconductorcorp-s29gl512t10fhi020-datasheets-3832.pdf | 18.4mm | 14mm | 56 | 13 Weeks | CAN ALSO ORGANISED AS 1GX1 | 8542.32.00.51 | 1 | YES | DUAL | GULL WING | NOT SPECIFIED | 3V | 0.5mm | INDUSTRIAL | 105°C | -40°C | 3.6V | 2.7V | NOT SPECIFIED | R-PDSO-G56 | AEC-Q100 | 2.7V | 64MX16 | 16 | 1073741824 bit | PARALLEL | 110 ns | FLASH | |||||||||||||||||||||||||||||||||||||||||||||||||
| MT40A512M8SA-062E AUT:F | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~125°C TC | Bulk | 3 (168 Hours) | SDRAM - DDR4 | ROHS3 Compliant | 78-TFBGA | 1.14V~1.26V | 4Gb 512M x 8 | Volatile | 19ns | 1.6GHz | DRAM | Parallel | 15ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CY14B101LA-ZS25XIT | Cypress Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 3 (168 Hours) | NVSRAM (Non-Volatile SRAM) | ASYNCHRONOUS | 1.194mm | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/cypresssemiconductorcorp-cy14b101lasp45xi-datasheets-7591.pdf | 44-TSOP (0.400, 10.16mm Width) | 18.415mm | 3V | 44 | 13 Weeks | 44 | 1 Mb | EAR99 | Gold, Tin | 8542.32.00.41 | 1 | 70mA | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | 2.7V~3.6V | DUAL | 260 | 3V | 0.8mm | CY14B101 | 44 | 3.6V | 2.7V | 30 | SRAMs | Not Qualified | 1Mb 128K x 8 | Non-Volatile | 8b | NVSRAM | Parallel | 128KX8 | 8 | 25ns | 0.005A | 8b | 25 ns | ||||||||||||||||||||||||||||||||||||
| IS45S16320D-7TLA1 | ISSI, Integrated Silicon Solution Inc |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TA | Tray | 3 (168 Hours) | SDRAM | SYNCHRONOUS | 1.2mm | ROHS3 Compliant | 54-TSOP (0.400, 10.16mm Width) | 22.22mm | 54 | 8 Weeks | 54 | 1 | EAR99 | AUTO/SELF REFRESH | 1 | YES | 3V~3.6V | DUAL | 3.3V | 0.8mm | 54 | 3.6V | 3V | 3.3V | 0.22mA | Not Qualified | AEC-Q100 | 512Mb 32M x 16 | Volatile | 16b | 3-STATE | 5.4ns | 143MHz | DRAM | Parallel | 32MX16 | 16 | 536870912 bit | 0.004A | COMMON | 8192 | 1248FP | 1248 | |||||||||||||||||||||||||||||||||||||||
| MT53E256M32D2DS-053 AAT:B TR | Micron Technology Inc. | $39.97 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -30°C~105°C | Tape & Reel (TR) | 3 (168 Hours) | SDRAM - Mobile LPDDR4 | ROHS3 Compliant | 200-WFBGA | 12 Weeks | 0.6V 1.1V | 8Gb 256M x 32 | Volatile | 1.866GHz | DRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MT53B256M32D1NP-062 AUT:C TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~125°C TA | Tape & Reel (TR) | 3 (168 Hours) | SDRAM - Mobile LPDDR4 | ROHS3 Compliant | 200-WFBGA | 6 Weeks | 1.1V | 200-WFBGA (10x14.5) | 8Gb 256M x 32 | Volatile | 1.6GHz | DRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MT53E256M32D2DS-046 AAT:B TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~105°C | Tape & Reel (TR) | 3 (168 Hours) | SDRAM - Mobile LPDDR4 | ROHS3 Compliant | 200-WFBGA | 0.6V 1.1V | 8Gb 256M x 32 | Volatile | 2.133GHz | DRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MTFC16GAPALBH-IT | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | e•MMC™ | Surface Mount | -40°C~85°C TA | Tray | 3 (168 Hours) | FLASH - NAND | ROHS3 Compliant | 153-TFBGA | 2.7V~3.6V | 128Gb 16G x 8 | Non-Volatile | FLASH | MMC | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CY62167G30-55ZXE | Cypress Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MoBL® | Surface Mount | -40°C~125°C TA | Tray | 3 (168 Hours) | SRAM - Asynchronous | 1.194mm | ROHS3 Compliant | 2001 | 48-TFSOP (0.724, 18.40mm Width) | 18.415mm | 10.16mm | 44 | 13 Weeks | 3A991.B.2.B | 8542.32.00.41 | 1 | YES | 2.2V~3.6V | DUAL | 3V | 0.8mm | 3.6V | 2.2V | R-PDSO-G44 | 16Mb 2M x 8 1M x 16 | Volatile | SRAM | Parallel | 1MX16 | 16 | 55ns | 16777216 bit | 55 ns | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IS64WV10248EDBLL-10BLA3 | ISSI, Integrated Silicon Solution Inc |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~125°C TA | Tray | 3 (168 Hours) | SRAM - Asynchronous | 1.2mm | ROHS3 Compliant | 48-TFBGA | 8mm | 6mm | 48 | 10 Weeks | 1 | YES | 2.4V~3.6V | BOTTOM | 3V | 0.75mm | 3.6V | 2.4V | 2.5/3.3V | 0.065mA | Not Qualified | R-PBGA-B48 | AEC-Q100 | 8Mb 1M x 8 | Volatile | 3-STATE | SRAM | Parallel | 1MX8 | 8 | 10ns | 8388608 bit | 0.035A | 10 ns | COMMON | 2V | ||||||||||||||||||||||||||||||||||||||||||||||
| MT28HL04GGBB1EBK-0GCT | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Bulk | 3 (168 Hours) | ROHS3 Compliant | 5 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 71V67602S150PFG8 | Renesas Electronics America Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 0°C~70°C TA | Tape & Reel (TR) | 3 (168 Hours) | SRAM - Synchronous, SDR | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/renesaselectronicsamericainc-71v67602s166pfg8-datasheets-8866.pdf | 100-LQFP | 13 Weeks | 3.135V~3.465V | IDT71V67602 | 100-TQFP (14x14) | 9Mb 256K x 36 | Volatile | 3.8ns | 150MHz | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MT53D512M16D1DS-046 AAT:D TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q100 | Surface Mount | -40°C~105°C TC | Tape & Reel (TR) | 3 (168 Hours) | SDRAM - Mobile LPDDR4 | ROHS3 Compliant | 200-WFBGA | 8Gb 512M x 16 | Volatile | 2.133GHz | DRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 6116LA25DB | Renesas Electronics America Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~125°C TA | Tray | 1 (Unlimited) | SRAM - Asynchronous | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/renesaselectronicsamericainc-6116sa120db-datasheets-4340.pdf | 24-CDIP (0.600, 15.24mm) | 15 Weeks | 4.5V~5.5V | IDT6116 | 16Kb 2K x 8 | Volatile | SRAM | Parallel | 25ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IS64WV51216BLL-10MLA3-TR | ISSI, Integrated Silicon Solution Inc |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~125°C TA | Tape & Reel (TR) | 3 (168 Hours) | SRAM - Asynchronous | ROHS3 Compliant | 48-TFBGA | 10 Weeks | 48 | 8 Mb | 1 | No | 140mA | 2.4V~3.6V | 8Mb 512K x 16 | Volatile | 19b | SRAM | Parallel | 10ns | 16b | Asynchronous | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 6116SA20DB | Renesas Electronics America Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~125°C TA | Tray | 1 (Unlimited) | SRAM - Asynchronous | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/renesaselectronicsamericainc-6116sa120db-datasheets-4340.pdf | 24-CDIP (0.600, 15.24mm) | 10 Weeks | 4.5V~5.5V | IDT6116 | 16Kb 2K x 8 | Volatile | SRAM | Parallel | 20ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 6116LA150DB | Renesas Electronics America Inc. | $119.83 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~125°C TA | Tray | 1 (Unlimited) | SRAM - Asynchronous | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/renesaselectronicsamericainc-6116sa120db-datasheets-4340.pdf | 24-CDIP (0.600, 15.24mm) | 15 Weeks | 4.5V~5.5V | IDT6116 | 16Kb 2K x 8 | Volatile | SRAM | Parallel | 150ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IS61NLP102418B-200B3L | ISSI, Integrated Silicon Solution Inc |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 0°C~70°C TA | Tray | 3 (168 Hours) | SRAM - Synchronous, SDR | 1.2mm | ROHS3 Compliant | 165-TBGA | 15mm | 13mm | 165 | 12 Weeks | 165 | 1 | YES | 3.135V~3.465V | BOTTOM | NOT SPECIFIED | 3.3V | 1mm | 3.465V | 3.135V | NOT SPECIFIED | 18Mb 1M x 18 | Volatile | 3ns | 200MHz | SRAM | Parallel | 1MX18 | 18 | 18874368 bit | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| 70125L25JG8 | Renesas Electronics America Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 0°C~70°C TA | Tape & Reel (TR) | 3 (168 Hours) | SRAM - Dual Port, Asynchronous | ROHS3 Compliant | /files/renesaselectronicsamericainc-70121l25jg-datasheets-9752.pdf | 52-LCC (J-Lead) | 13 Weeks | 4.5V~5.5V | IDT70125 | 18Kb 2K x 9 | Volatile | SRAM | Parallel | 25ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MTFC4GMWDQ-3M AIT A | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | e•MMC™ | Surface Mount | -40°C~85°C TA | Bulk | 3 (168 Hours) | FLASH - NAND | ROHS3 Compliant | 100-LBGA | 7 Weeks | 2.7V~3.6V | 32Gb 4G x 8 | Non-Volatile | 2.7V | FLASH | MMC | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AS4C64M16D1A-6TCNTR | Alliance Memory, Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 0°C~70°C TA | Tape & Reel (TR) | 3 (168 Hours) | SDRAM - DDR | Non-RoHS Compliant | 2015 | https://pdf.utmel.com/r/datasheets/alliancememoryinc-as4c64m16d1a6tin-datasheets-4260.pdf | 66-TSSOP (0.400, 10.16mm Width) | 8 Weeks | unknown | 2.3V~2.7V | NOT SPECIFIED | NOT SPECIFIED | 1Gb 64M x 16 | Volatile | 700ps | 166MHz | DRAM | Parallel | 15ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 6116LA35DB | Renesas Electronics America Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~125°C TA | Tray | 1 (Unlimited) | SRAM - Asynchronous | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/renesaselectronicsamericainc-6116sa120db-datasheets-4340.pdf | 24-CDIP (0.600, 15.24mm) | 15 Weeks | 4.5V~5.5V | IDT6116 | 16Kb 2K x 8 | Volatile | SRAM | Parallel | 35ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 7130LA20TFG | Renesas Electronics America Inc. | $20.78 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 0°C~70°C TA | Tray | 3 (168 Hours) | SRAM - Dual Port, Asynchronous | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/renesaselectronicsamericainc-7130la25pfgi-datasheets-7328.pdf | 64-LQFP | 14 Weeks | 4.5V~5.5V | IDT7130 | 8Kb 1K x 8 | Volatile | SRAM | Parallel | 20ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IS61LF51218A-7.5TQLI | ISSI, Integrated Silicon Solution Inc | $26.36 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TA | Tray | 3 (168 Hours) | SRAM - Synchronous, SDR | 1.6mm | ROHS3 Compliant | 100-LQFP | 3.3V | 100 | 12 Weeks | 100 | 9 Mb | yes | 2 | FLOW-THROUGH ARCHITECTURE | No | 1 | 185mA | e3 | Matte Tin (Sn) - annealed | YES | 3.135V~3.6V | QUAD | 260 | 3.3V | 0.65mm | 100 | 3.465V | 3.135V | 40 | 9Mb 512K x 18 | Volatile | 3-STATE | 7.5ns | 117MHz | 19b | SRAM | Parallel | 18 | 0.085A | 18b | Synchronous | COMMON | 3.14V | ||||||||||||||||||||||||||||||||||||||
| IS61LF25636A-7.5TQLI | ISSI, Integrated Silicon Solution Inc | $13.97 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TA | Tray | 2 (1 Year) | SRAM - Synchronous, SDR | 1.6mm | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/issi-is61lf25636a75tqli-datasheets-9137.pdf | 100-LQFP | 20mm | 3.3V | 185mA | 100 | 12 Weeks | 657.000198mg | 100 | 9 Mb | yes | 4 | 3A991.B.2.A | FLOW-THROUGH ARCHITECTURE | No | 1 | 185mA | e3 | Matte Tin (Sn) - annealed | YES | 3.135V~3.6V | QUAD | 260 | 3.3V | 0.65mm | 100 | 3.135V | 40 | 9Mb 256K x 36 | Volatile | 3-STATE | 7.5ns | 117MHz | 18b | SRAM | Parallel | 256KX36 | 36 | 0.085A | 36b | Synchronous | COMMON | ||||||||||||||||||||||||||||||||||
| IS61LPS25636A-200B3LI | ISSI, Integrated Silicon Solution Inc | $23.71 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TA | Tray | 2 (1 Year) | SRAM - Synchronous, SDR | 1.2mm | ROHS3 Compliant | 165-TBGA | 15mm | 3.3V | 165 | 12 Weeks | 165 | 9 Mb | yes | 4 | 3A991.B.2.A | PIPELINED ARCHITECTURE | No | 1 | 275mA | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | YES | 3.135V~3.465V | BOTTOM | 260 | 3.3V | 1mm | 165 | 3.135V | 40 | 9Mb 256K x 36 | Volatile | 3-STATE | 3.1ns | 200MHz | 18b | SRAM | Parallel | 256KX36 | 36 | 0.105A | 36b | Synchronous | COMMON | |||||||||||||||||||||||||||||||||||||
| IS61NLP51218A-200TQLI | ISSI, Integrated Silicon Solution Inc |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TA | Tray | 2 (1 Year) | SRAM - Synchronous, SDR | 1.6mm | ROHS3 Compliant | 100-LQFP | 3.3V | 100 | 12 Weeks | 100 | 9 Mb | yes | 2 | PIPELINED ARCHITECTURE | No | 1 | 280mA | e3 | Matte Tin (Sn) - annealed | YES | 3.135V~3.465V | QUAD | 260 | 3.3V | 0.65mm | 100 | 3.465V | 3.135V | 40 | 9Mb 512K x 18 | Volatile | 3-STATE | 3.1ns | 200MHz | 19b | SRAM | Parallel | 18 | 0.05A | 18b | Synchronous | COMMON | 3.14V |
