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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | Operating Mode | Height Seated (Max) | RoHS Status | Published | Datasheet | Package / Case | Length | Width | Operating Supply Voltage | Lead Free | Max Supply Current | Number of Terminations | Factory Lead Time | REACH SVHC | Number of Pins | Interface | Density | Number of Ports | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Surface Mount | Voltage - Supply | Terminal Position | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Supply Voltage-Max (Vsup) | Supply Voltage-Min (Vsup) | Time@Peak Reflow Temperature-Max (s) | Subcategory | Power Supplies | Supply Current-Max | Qualification Status | JESD-30 Code | Supplier Device Package | Screening Level | Memory Size | Memory Type | Data Bus Width | Output Characteristics | Access Time | Programming Voltage | Clock Frequency | Address Bus Width | Memory Format | Memory Interface | Organization | Memory Width | Write Cycle Time - Word, Page | Memory Density | Parallel/Serial | Standby Current-Max | Word Size | Access Time (Max) | I/O Type | Refresh Cycles | Sequential Burst Length | Interleaved Burst Length | Standby Voltage-Min | Access Mode |
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| 6116SA45DB | Renesas Electronics America Inc. | $120.19 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~125°C TA | Tray | 1 (Unlimited) | SRAM - Asynchronous | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/renesaselectronicsamericainc-6116sa120db-datasheets-4340.pdf | 24-CDIP (0.600, 15.24mm) | 15 Weeks | 4.5V~5.5V | 16Kb 2K x 8 | Volatile | SRAM | Parallel | 45ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 6116LA20TDB | Renesas Electronics America Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~125°C TA | Tray | 1 (Unlimited) | SRAM - Asynchronous | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/renesaselectronicsamericainc-6116sa120db-datasheets-4340.pdf | 24-CDIP (0.300, 7.62mm) | 15 Weeks | 4.5V~5.5V | IDT6116 | 16Kb 2K x 8 | Volatile | SRAM | Parallel | 20ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| S70FL01GSAGMFM010 | Cypress Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FL-S | Surface Mount | -40°C~125°C TA | Tray | 3 (168 Hours) | FLASH - NOR | SYNCHRONOUS | 2.65mm | ROHS3 Compliant | 16-SOIC (0.295, 7.50mm Width) | 10.3mm | 7.5mm | 16 | 13 Weeks | 1 | YES | 2.7V~3.6V | DUAL | 3V | 1.27mm | 3.6V | 2.7V | R-PDSO-G16 | AEC-Q100 | 1Gb 128M x 8 | Non-Volatile | 3V | 133MHz | FLASH | SPI - Quad I/O | 128MX8 | 8 | 1073741824 bit | SERIAL | |||||||||||||||||||||||||||||||||||||||||||||
| IS64WV51216EDBLL-10BLA3 | ISSI, Integrated Silicon Solution Inc |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~125°C TA | Tray | 3 (168 Hours) | SRAM - Asynchronous | 1.2mm | ROHS3 Compliant | 48-TFBGA | 8mm | 6mm | 48 | 10 Weeks | 1 | YES | 2.4V~3.6V | BOTTOM | 3V | 0.75mm | 3.6V | 2.4V | 2.5/3.3V | 0.065mA | Not Qualified | R-PBGA-B48 | AEC-Q100 | 8Mb 512K x 16 | Volatile | 3-STATE | SRAM | Parallel | 512KX16 | 16 | 10ns | 8388608 bit | 0.035A | 10 ns | COMMON | 2V | |||||||||||||||||||||||||||||||||||||||||
| 6116LA55TDB | Renesas Electronics America Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~125°C TA | Tray | 1 (Unlimited) | SRAM - Asynchronous | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/renesaselectronicsamericainc-6116sa120db-datasheets-4340.pdf | 24-CDIP (0.300, 7.62mm) | 15 Weeks | 4.5V~5.5V | IDT6116 | 24-CDIP | 16Kb 2K x 8 | Volatile | 55ns | SRAM | Parallel | 55ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EDB4064B4PB-1DIT-F-D | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TC | Tray | 3 (168 Hours) | SDRAM - Mobile LPDDR2 | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/microntechnologyinc-edb4064b4pb1ditfr-datasheets-5534.pdf | 216-WFBGA | 9 Weeks | 1.14V~1.95V | 4Gb 64M x 64 | Volatile | 533MHz | DRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FM1808B-SGTR | Cypress Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | F-RAM™ | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 3 (168 Hours) | FRAM (Ferroelectric RAM) | 2.67mm | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/cypresssemiconductorcorp-fm1808bsg-datasheets-8916.pdf | 28-SOIC (0.295, 7.50mm Width) | 17.9mm | 5V | Lead Free | 28 | 6 Weeks | 28 | 256 kb | EAR99 | No | 8542.32.00.71 | 1 | 15mA | e3 | Tin (Sn) | 4.5V~5.5V | DUAL | 260 | 5V | 1.27mm | FM1808B | 30 | SRAMs | 5V | 256Kb 32K x 8 | Non-Volatile | 8b | 70 ns | FRAM | Parallel | 32KX8 | 8 | 130ns | 0.00005A | 8b | |||||||||||||||||||||||||||||||||
| 6116LA35TDB | Renesas Electronics America Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~125°C TA | Tray | 1 (Unlimited) | SRAM - Asynchronous | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/renesaselectronicsamericainc-6116sa120db-datasheets-4340.pdf | 24-CDIP (0.300, 7.62mm) | 15 Weeks | 4.5V~5.5V | IDT6116 | 16Kb 2K x 8 | Volatile | SRAM | Parallel | 35ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 6116SA55TDB | Renesas Electronics America Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | SRAM - Asynchronous | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/renesaselectronicsamericainc-6116sa120db-datasheets-4340.pdf | 24-CDIP (0.600, 15.24mm) | 15 Weeks | 4.5V~5.5V | IDT6116 | 24-CDIP | 16Kb 2K x 8 | Volatile | 55ns | SRAM | Parallel | 55ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IS46TR16128AL-125KBLA2 | ISSI, Integrated Silicon Solution Inc |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~105°C TC | Tray | 3 (168 Hours) | SDRAM - DDR3 | SYNCHRONOUS | 1.2mm | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/issiintegratedsiliconsolutioninc-is46tr16128a15hbla1tr-datasheets-2271.pdf | 96-TFBGA | 13mm | 1.35V | 285mA | 96 | 96 | 1 | PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH | 1 | YES | 1.283V~1.45V | BOTTOM | 1.35V | 0.8mm | 1.45V | 1.283V | Not Qualified | AEC-Q100 | 2Gb 128M x 16 | Volatile | 16b | 3-STATE | 20ns | 800MHz | DRAM | Parallel | 128MX16 | 16 | 15ns | 2147483648 bit | 0.02A | COMMON | 8192 | 48 | 48 | |||||||||||||||||||||||||||||||||||
| MT40A512M16JY-083E AIT:B TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~95°C TC | Tape & Reel (TR) | 3 (168 Hours) | SDRAM - DDR4 | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/microntechnologyinc-mt40a2g4we083ebtr-datasheets-5390.pdf | 96-TFBGA | 4 Weeks | 1.14V~1.26V | 8Gb 512M x 16 | Volatile | 1.2GHz | DRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 6116LA120TDB | Renesas Electronics America Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~125°C TA | Tray | 1 (Unlimited) | SRAM - Asynchronous | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/renesaselectronicsamericainc-6116sa120db-datasheets-4340.pdf | 24-CDIP (0.300, 7.62mm) | 15 Weeks | 4.5V~5.5V | IDT6116 | 16Kb 2K x 8 | Volatile | SRAM | Parallel | 120ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IS64WV51216EDBLL-10CTLA3 | ISSI, Integrated Silicon Solution Inc | $15.14 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~125°C TA | Tray | 3 (168 Hours) | SRAM - Asynchronous | 1.2mm | ROHS3 Compliant | 44-TSOP (0.400, 10.16mm Width) | 18.41mm | 10.16mm | 44 | 10 Weeks | 44 | 1 | YES | 2.4V~3.6V | DUAL | 3V | 0.8mm | 3.6V | 2.4V | 2.5/3.3V | 0.065mA | Not Qualified | AEC-Q100 | 8Mb 512K x 16 | Volatile | 3-STATE | SRAM | Parallel | 512KX16 | 16 | 10ns | 8388608 bit | 0.035A | 10 ns | COMMON | 2V | ||||||||||||||||||||||||||||||||||||||||
| MT40A512M16JY-075E AIT:B TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~95°C TC | Tape & Reel (TR) | 3 (168 Hours) | SDRAM - DDR4 | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/microntechnologyinc-mt40a2g4we083ebtr-datasheets-5390.pdf | 96-TFBGA | 12 Weeks | 1.14V~1.26V | 8Gb 512M x 16 | Volatile | 1.33GHz | DRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CY62157H30-45BVXA | Cypress Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MoBL® | Surface Mount | -40°C~85°C TA | Tray | 3 (168 Hours) | SRAM - Asynchronous | 1mm | ROHS3 Compliant | 48-VFBGA | 8mm | 6mm | 48 | 13 Weeks | 1 | YES | 2.2V~3.6V | BOTTOM | NOT SPECIFIED | 3V | 0.75mm | 3.6V | 2.2V | NOT SPECIFIED | R-PBGA-B48 | 8Mb 512K x 16 | Volatile | SRAM | Parallel | 512KX16 | 16 | 45ns | 8388608 bit | 45 ns | ||||||||||||||||||||||||||||||||||||||||||||||
| 71V30L25TFG | Renesas Electronics America Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 0°C~70°C TA | Tray | 3 (168 Hours) | SRAM - Dual Port, Asynchronous | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/renesaselectronicsamericainc-71v30s55tfg-datasheets-6417.pdf | 64-LQFP | 12 Weeks | 3V~3.6V | IDT71V30 | 64-TQFP (10x10) | 8Kb 1K x 8 | Volatile | 25ns | SRAM | Parallel | 25ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EDB4064B4PB-1DIT-F-R TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TC | Tape & Reel (TR) | 3 (168 Hours) | SDRAM - Mobile LPDDR2 | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/microntechnologyinc-edb4064b4pb1ditfr-datasheets-5534.pdf | 216-WFBGA | 9 Weeks | 1.14V~1.95V | 4Gb 64M x 64 | Volatile | 533MHz | DRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| S29GL512N10FFA010 | Cypress Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q100, GL-N | Surface Mount | -40°C~85°C TA | Tray | 3 (168 Hours) | FLASH - NOR | ROHS3 Compliant | 64-LBGA | 18 Weeks | 2.7V~3.6V | 512Mb 64M x 8 32M x 16 | Non-Volatile | FLASH | Parallel | 100ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IS64WV10248EDBLL-10CTLA3 | ISSI, Integrated Silicon Solution Inc |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~125°C TA | Tray | 3 (168 Hours) | SRAM - Asynchronous | 1.2mm | ROHS3 Compliant | 44-TSOP (0.400, 10.16mm Width) | 18.41mm | 10.16mm | 44 | 10 Weeks | 44 | 1 | YES | 2.4V~3.6V | DUAL | 3V | 0.8mm | 3.6V | 2.4V | 2.5/3.3V | 0.065mA | Not Qualified | AEC-Q100 | 8Mb 1M x 8 | Volatile | 3-STATE | SRAM | Parallel | 1MX8 | 8 | 10ns | 8388608 bit | 0.035A | 10 ns | COMMON | 2V | |||||||||||||||||||||||||||||||||||||||||
| MT40A512M16JY-075E AIT:B | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~95°C TC | Tray | SDRAM - DDR4 | SYNCHRONOUS | 1.2mm | RoHS Compliant | https://pdf.utmel.com/r/datasheets/microntechnologyinc-mt40a2g4we083ebtr-datasheets-5390.pdf | 96-TFBGA | 14mm | 8mm | 96 | 1 | AUTO/SELF REFRESH | compliant | 1 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | YES | 1.14V~1.26V | BOTTOM | 260 | 1.2V | 0.8mm | 1.26V | 1.14V | 30 | R-PBGA-B96 | AEC-Q100 | 8Gb 512M x 16 | Volatile | 1.33GHz | DRAM | Parallel | 512MX16 | 16 | 8589934592 bit | MULTI BANK PAGE BURST | |||||||||||||||||||||||||||||||||||||||||
| MR20H40CDFR | Everspin Technologies Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 3 (168 Hours) | MRAM (Magnetoresistive RAM) | SYNCHRONOUS | 0.9mm | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/everspintechnologiesinc-mr25h40cdf-datasheets-7354.pdf | 8-VDFN Exposed Pad | 6mm | 5mm | 3.3V | 8 | 12 Weeks | 8 | SPI, Serial | 4 Mb | EAR99 | 1 | 3V~3.6V | DUAL | 260 | 3.3V | 1.27mm | 8 | 3.6V | 3V | 40 | 0.0465mA | Not Qualified | 4Mb 512K x 8 | Non-Volatile | 9 ns | 50MHz | RAM | SPI | 8 | 0.00075A | 8b | |||||||||||||||||||||||||||||||||||||
| MT28HL04GABB1EPG-0GCT | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Bulk | 3 (168 Hours) | ROHS3 Compliant | 4 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MT40A512M16JY-083E AIT:B | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~95°C TC | Tray | SDRAM - DDR4 | SYNCHRONOUS | 1.2mm | RoHS Compliant | https://pdf.utmel.com/r/datasheets/microntechnologyinc-mt40a2g4we083ebtr-datasheets-5390.pdf | 96-TFBGA | 14mm | 8mm | 96 | 1 | AUTO/SELF REFRESH | compliant | 1 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | YES | 1.14V~1.26V | BOTTOM | 260 | 1.2V | 0.8mm | 1.26V | 1.14V | 30 | R-PBGA-B96 | AEC-Q100 | 8Gb 512M x 16 | Volatile | 1.2GHz | DRAM | Parallel | 512MX16 | 16 | 8589934592 bit | MULTI BANK PAGE BURST | |||||||||||||||||||||||||||||||||||||||||
| IS61NVF51236B-6.5B3LI-TR | ISSI, Integrated Silicon Solution Inc |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 3 (168 Hours) | SRAM - Synchronous, SDR | ROHS3 Compliant | 165-TBGA | 12 Weeks | 165 | 2.375V~2.625V | 18Mb 512K x 36 | Volatile | 6.5ns | 133MHz | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IS42S32160D-7BLI | ISSI, Integrated Silicon Solution Inc | $16.01 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -40°C~85°C TA | Tray | 3 (168 Hours) | SDRAM | 1.2mm | ROHS3 Compliant | 90-TFBGA | 13mm | 3.3V | Lead Free | 90 | 8 Weeks | No SVHC | 90 | 512 Mb | 1 | EAR99 | AUTO/SELF REFRESH | No | 8542.32.00.28 | 1 | 230mA | 3V~3.6V | BOTTOM | 3.3V | 0.8mm | 90 | 3.6V | 3V | 512Mb 16M x 32 | Volatile | 32b | 3-STATE | 5.4ns | 143MHz | 15b | DRAM | Parallel | 16MX32 | 32 | 0.004A | COMMON | 8192 | 1248FP | 1248 | |||||||||||||||||||||||||||||||
| MT53D512M16D1DS-046 AIT:D TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q100 | Surface Mount | -40°C~95°C TC | Tape & Reel (TR) | 3 (168 Hours) | SDRAM - Mobile LPDDR4 | ROHS3 Compliant | 200-WFBGA | 8Gb 512M x 16 | Volatile | 2.133GHz | DRAM | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MT53E256M32D2DS-053 AIT:B TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~95°C | Tape & Reel (TR) | 3 (168 Hours) | SDRAM - Mobile LPDDR4 | ROHS3 Compliant | 200-WFBGA | 0.6V 1.1V | 8Gb 256M x 32 | Volatile | 1.866GHz | DRAM | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MT40A512M16LY-062E AIT:E TR | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~95°C TC | Tape & Reel (TR) | 3 (168 Hours) | SDRAM - DDR4 | ROHS3 Compliant | 96-TFBGA | 1.14V~1.26V | 8Gb 512M x 16 | Volatile | 19ns | 1.6GHz | DRAM | Parallel | 15ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MT40A1G8SA-062E AIT:E | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q100 | Surface Mount | -40°C~95°C TC | Tray | 3 (168 Hours) | SDRAM - DDR4 | ROHS3 Compliant | 78-TFBGA | 1.14V~1.26V | 8Gb 1G x 8 | Volatile | 19ns | 1.6GHz | DRAM | Parallel | 15ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MT53B256M32D1NP-062 AIT:C | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~95°C TC | Tray | SDRAM - Mobile LPDDR4 | 200-WFBGA | 13 Weeks | 1.1V | 8Gb 256M x 32 | Volatile | 1600MHz | DRAM |
