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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Frequency | Operating Mode | Height Seated (Max) | RoHS Status | Published | Datasheet | Package / Case | Length | Width | Operating Supply Voltage | Lead Free | Max Supply Current | Number of Terminations | Factory Lead Time | Max Supply Voltage | Min Supply Voltage | Number of Pins | Interface | Density | Pbfree Code | Number of Ports | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Max Frequency | HTS Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Surface Mount | Voltage - Supply | Terminal Position | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Supply Voltage-Max (Vsup) | Supply Voltage-Min (Vsup) | Time@Peak Reflow Temperature-Max (s) | Subcategory | Power Supplies | Supply Current-Max | Qualification Status | JESD-30 Code | Supplier Device Package | Screening Level | Memory Size | Memory Type | Data Bus Width | Output Characteristics | Access Time | Programming Voltage | Clock Frequency | Address Bus Width | Memory Format | Memory Interface | Organization | Memory Width | Write Cycle Time - Word, Page | Memory Density | Alternate Memory Width | Standby Current-Max | Word Size | Access Time (Max) | Sync/Async | I/O Type | Refresh Cycles | Sequential Burst Length | Interleaved Burst Length | Standby Voltage-Min | Access Mode |
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| IS61NLP51218A-200TQLI | ISSI, Integrated Silicon Solution Inc |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TA | Tray | 2 (1 Year) | SRAM - Synchronous, SDR | 1.6mm | ROHS3 Compliant | 100-LQFP | 3.3V | 100 | 12 Weeks | 100 | 9 Mb | yes | 2 | PIPELINED ARCHITECTURE | No | 1 | 280mA | e3 | Matte Tin (Sn) - annealed | YES | 3.135V~3.465V | QUAD | 260 | 3.3V | 0.65mm | 100 | 3.465V | 3.135V | 40 | 9Mb 512K x 18 | Volatile | 3-STATE | 3.1ns | 200MHz | 19b | SRAM | Parallel | 18 | 0.05A | 18b | Synchronous | COMMON | 3.14V | |||||||||||||||||||||||||||||||||||||||||
| SM662GX8-ACS | Silicon Motion, Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tray | 3 (168 Hours) | ROHS3 Compliant | 12 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 71V321L25TFG8 | Renesas Electronics America Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 0°C~70°C TA | Tape & Reel (TR) | 3 (168 Hours) | SRAM - Dual Port, Asynchronous | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/renesaselectronicsamericainc-71v321l25tfgi-datasheets-6634.pdf | 64-LQFP | 12 Weeks | 3V~3.6V | IDT71V321 | 64-TQFP (10x10) | 16Kb 2K x 8 | Volatile | 25ns | SRAM | Parallel | 25ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IS46TR16256A-125KBLA2-TR | ISSI, Integrated Silicon Solution Inc |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -40°C~105°C TC | Tape & Reel (TR) | 3 (168 Hours) | SDRAM - DDR3 | ROHS3 Compliant | 96-TFBGA | 1.5V | 290mA | 10 Weeks | 96 | 4 Gb | 230mA | 1.425V~1.575V | 4Gb 256M x 16 | Volatile | 16b | 20ns | 800MHz | 18b | DRAM | Parallel | 15ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CY14B101LA-BA45XIT | Cypress Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 3 (168 Hours) | NVSRAM (Non-Volatile SRAM) | ASYNCHRONOUS | 1.2mm | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/cypresssemiconductorcorp-cy14b101lasp45xi-datasheets-7591.pdf | 48-TFBGA | 10mm | 3V | 48 | 13 Weeks | 48 | 1 Mb | EAR99 | 8542.32.00.41 | 1 | 52mA | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 2.7V~3.6V | BOTTOM | 260 | 3V | 0.75mm | CY14B101 | 48 | 3.6V | 2.7V | 30 | SRAMs | Not Qualified | 1Mb 128K x 8 | Non-Volatile | 8b | NVSRAM | Parallel | 128KX8 | 8 | 45ns | 0.005A | 8b | 45 ns | |||||||||||||||||||||||||||||||||||||||
| MT47H128M16RT-25E AAT:C | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~105°C TC | Tray | 3 (168 Hours) | SDRAM - DDR2 | SYNCHRONOUS | 1.2mm | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/microntechnologyinc-mt47h128m16rt25eitc-datasheets-7288.pdf | 84-TFBGA | 12.5mm | 9mm | 84 | 4 Weeks | yes | 1 | EAR99 | AUTO/SELF REFRESH | 8542.32.00.36 | 1 | e1 | TIN SILVER COPPER | YES | 1.7V~1.9V | BOTTOM | 260 | 1.8V | 0.8mm | MT47H128M16 | 84 | 1.9V | 1.7V | 30 | 1.8V | 0.33mA | Not Qualified | R-PBGA-B84 | AEC-Q100 | 2Gb 128M x 16 | Volatile | 3-STATE | 400ps | 400MHz | DRAM | Parallel | 128MX16 | 16 | 15ns | 2147483648 bit | 0.012A | COMMON | 8192 | 48 | 48 | |||||||||||||||||||||||||||||||
| MTFC4GMWDQ-AIT A | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | e•MMC™ | Surface Mount | -40°C~85°C TA | Bulk | 3 (168 Hours) | FLASH - NAND | ROHS3 Compliant | 100-LBGA | 7 Weeks | 2.7V~3.6V | 32Gb 4G x 8 | Non-Volatile | FLASH | MMC | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 6116SA45TDB | Renesas Electronics America Inc. | $23.29 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~125°C TA | Tray | 1 (Unlimited) | SRAM - Asynchronous | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/renesaselectronicsamericainc-6116sa120db-datasheets-4340.pdf | 24-CDIP (0.300, 7.62mm) | 15 Weeks | 4.5V~5.5V | IDT6116 | 24-CDIP | 16Kb 2K x 8 | Volatile | 45ns | SRAM | Parallel | 45ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IS61NVP25636A-200TQLI | ISSI, Integrated Silicon Solution Inc |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TA | Tray | 2 (1 Year) | SRAM - Synchronous, SDR | 1.6mm | ROHS3 Compliant | 100-LQFP | 20mm | 2.5V | 100 | 12 Weeks | 100 | 9 Mb | yes | 4 | 3A991.B.2.A | PIPELINED ARCHITECTURE | No | 1 | 280mA | e3 | Matte Tin (Sn) - annealed | YES | 2.375V~2.625V | QUAD | 260 | 2.5V | 0.65mm | 100 | 2.625V | 2.375V | 40 | 9Mb 256K x 36 | Volatile | 3-STATE | 3.1ns | 200MHz | 18b | SRAM | Parallel | 256KX36 | 36 | 0.05A | 36b | Synchronous | COMMON | 2.38V | ||||||||||||||||||||||||||||||||||||||
| RMLV0414EGSB-4S2#AA0 | Renesas Electronics America | $28.41 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TA | Tray | 3 (168 Hours) | CMOS | ASYNCHRONOUS | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-rmlv0414egsb4s2aa1-datasheets-8411.pdf | 44-TSOP (0.400, 10.16mm Width) | 44 | yes | 1 | YES | 2.7V~3.6V | DUAL | 3V | RMLV0414 | 44 | 3.6V | 2.7V | R-PDSO-G44 | 4Mb 256K x 16 | Volatile | SRAM | Parallel | 256KX16 | 16 | 45ns | 4194304 bit | 45 ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 71V30L35TFGI | Renesas Electronics America Inc. | $34.29 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TA | Tray | 3 (168 Hours) | SRAM - Dual Port, Asynchronous | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/renesaselectronicsamericainc-71v30s55tfg-datasheets-6417.pdf | 64-LQFP | 12 Weeks | 3V~3.6V | IDT71V30 | 8Kb 1K x 8 | Volatile | SRAM | Parallel | 35ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IS61NLP25636A-200B3LI | ISSI, Integrated Silicon Solution Inc | $15.04 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TA | Tray | 2 (1 Year) | SRAM - Synchronous, SDR | 1.2mm | ROHS3 Compliant | 165-TFBGA | 15mm | 3.3V | 165 | 12 Weeks | 165 | 9 Mb | yes | 4 | 3A991.B.2.A | PIPELINED ARCHITECTURE | No | 1 | 280mA | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | YES | 3.135V~3.465V | BOTTOM | 260 | 3.3V | 1mm | 165 | 3.135V | 40 | 9Mb 256K x 36 | Volatile | 3-STATE | 3.1ns | 200MHz | 18b | SRAM | Parallel | 256KX36 | 36 | 0.05A | 36b | Synchronous | COMMON | |||||||||||||||||||||||||||||||||||||||
| CY62157H30-45BVXAT | Cypress Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MoBL® | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 3 (168 Hours) | SRAM - Asynchronous | 1mm | ROHS3 Compliant | 48-VFBGA | 8mm | 6mm | 48 | 13 Weeks | 1 | YES | 2.2V~3.6V | BOTTOM | NOT SPECIFIED | 3V | 0.75mm | 3.6V | 2.2V | NOT SPECIFIED | R-PBGA-B48 | 8Mb 512K x 16 | Volatile | SRAM | Parallel | 512KX16 | 16 | 45ns | 8388608 bit | 45 ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| 6116SA25TDB | Renesas Electronics America Inc. | $128.35 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~125°C TA | Tray | 1 (Unlimited) | SRAM - Asynchronous | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/renesaselectronicsamericainc-6116sa120db-datasheets-4340.pdf | 24-CDIP (0.300, 7.62mm) | 15 Weeks | 4.5V~5.5V | IDT6116 | 16Kb 2K x 8 | Volatile | SRAM | Parallel | 25ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IS46TR16256AL-125KBLA1 | ISSI, Integrated Silicon Solution Inc |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~95°C TC | Tray | 3 (168 Hours) | SDRAM - DDR3 | SYNCHRONOUS | 1.2mm | ROHS3 Compliant | 96-TFBGA | 13mm | 261mA | 96 | 10 Weeks | 96 | 1 | PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH | 1 | YES | 1.283V~1.45V | BOTTOM | 1.35V | 0.8mm | 1.45V | 1.283V | 1.35V | Not Qualified | AEC-Q100 | 4Gb 256M x 16 | Volatile | 16b | 3-STATE | 20ns | 800MHz | DRAM | Parallel | 256MX16 | 16 | 15ns | 0.016A | COMMON | 8192 | 48 | 48 | |||||||||||||||||||||||||||||||||||||||||||
| MTFC8GLWDM-AIT A | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TA | Tray | 3 (168 Hours) | FLASH - NAND | ROHS3 Compliant | 153-TFBGA | 7 Weeks | 2.7V~3.6V | NOT SPECIFIED | NOT SPECIFIED | 64Gb 8G x 8 | Non-Volatile | 2.7V | FLASH | MMC | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EDB8164B4PT-1DIT-F-D | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TC | Tray | 3 (168 Hours) | SDRAM - Mobile LPDDR2 | SYNCHRONOUS | 0.8mm | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/microntechnologyinc-edb8164b4pt1datfd-datasheets-8979.pdf | 216-WFBGA | 12mm | 12mm | 216 | 8 Weeks | 1 | AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM | 1 | YES | 1.14V~1.95V | BOTTOM | 1.2V | 0.4mm | 1.95V | 1.14V | S-PBGA-B216 | 8Gb 128M x 64 | Volatile | 533MHz | DRAM | Parallel | 128MX64 | 64 | 8589934592 bit | SINGLE BANK PAGE BURST | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| 6116SA20TDB | Renesas Electronics America Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~125°C TA | Tray | 1 (Unlimited) | SRAM - Asynchronous | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/renesaselectronicsamericainc-6116sa120db-datasheets-4340.pdf | 24-CDIP (0.300, 7.62mm) | 15 Weeks | 4.5V~5.5V | IDT6116 | 16Kb 2K x 8 | Volatile | SRAM | Parallel | 20ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MT29RZ4C8DZZMHAN-18W.80D | Micron Technology Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | -25°C~85°C TA | Tray | FLASH - NAND, DRAM - LPDDR2 | 1.8V | 4Gb 256M x 16 N 4G 128M x 32 LPDDR2 | Non-Volatile | 533MHz | FLASH, RAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 71342LA20PFG8 | Renesas Electronics America Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 0°C~70°C TA | Tape & Reel (TR) | 3 (168 Hours) | SRAM - Dual Port, Asynchronous | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/renesaselectronicsamericainc-71342sa55pf-datasheets-2477.pdf | 64-LQFP | 12 Weeks | 4.5V~5.5V | IDT71342 | 64-TQFP (14x14) | 32Kb 4K x 8 | Volatile | 20ns | SRAM | Parallel | 20ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 6116SA35TDB | Renesas Electronics America Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~125°C TA | Tray | 1 (Unlimited) | SRAM - Asynchronous | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/renesaselectronicsamericainc-6116sa120db-datasheets-4340.pdf | 24-CDIP (0.300, 7.62mm) | 15 Weeks | 4.5V~5.5V | IDT6116 | 16Kb 2K x 8 | Volatile | SRAM | Parallel | 35ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IS42S32160D-6BLI | ISSI, Integrated Silicon Solution Inc | $23.83 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -40°C~85°C TA | Tray | 3 (168 Hours) | SDRAM | SYNCHRONOUS | 1.2mm | ROHS3 Compliant | 90-TFBGA | 13mm | 3.3V | 90 | 8 Weeks | 90 | 512 Mb | 1 | EAR99 | AUTO/SELF REFRESH | 8542.32.00.28 | 1 | 245mA | 3V~3.6V | BOTTOM | 3.3V | 0.8mm | 90 | 3.6V | 3V | Not Qualified | 512Mb 16M x 32 | Volatile | 32b | 3-STATE | 5.4ns | 166MHz | 15b | DRAM | Parallel | 16MX32 | 32 | 0.004A | COMMON | 8192 | 1248FP | 1248 | |||||||||||||||||||||||||||||||||||||||
| IS46DR16128C-3DBLA2 | ISSI, Integrated Silicon Solution Inc |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~105°C TA | Tray | 3 (168 Hours) | SDRAM - DDR2 | SYNCHRONOUS | 1.2mm | ROHS3 Compliant | 84-TFBGA | 12.5mm | 8mm | 84 | 8 Weeks | 1 | EAR99 | PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH | 1 | YES | 1.7V~1.9V | BOTTOM | 1.8V | 0.8mm | 1.9V | 1.7V | 1.8V | 0.485mA | Not Qualified | R-PBGA-B84 | AEC-Q100 | 2Gb 128M x 16 | Volatile | 3-STATE | 450ps | 333MHz | DRAM | Parallel | 128MX16 | 16 | 15ns | 2147483648 bit | 0.03A | COMMON | 8192 | 48 | 48 | |||||||||||||||||||||||||||||||||||||||||
| CY14E256LA-SZ25XIT | Cypress Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 3 (168 Hours) | NVSRAM (Non-Volatile SRAM) | ASYNCHRONOUS | 2.54mm | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/cypresssemiconductorcorp-cy14e256lasz45xi-datasheets-7342.pdf | 32-SOIC (0.295, 7.50mm Width) | 20.726mm | 5V | 32 | 13 Weeks | 32 | 256 kb | yes | EAR99 | Gold, Tin | 1 | 70mA | e3 | Matte Tin (Sn) | 4.5V~5.5V | DUAL | 260 | 5V | 1.27mm | CY14*256 | 32 | 30 | SRAMs | 5V | Not Qualified | 256Kb 32K x 8 | Non-Volatile | 8b | NVSRAM | Parallel | 8 | 25ns | 0.005A | 8b | 25 ns | ||||||||||||||||||||||||||||||||||||||||
| IS42S32160D-6BI-TR | ISSI, Integrated Silicon Solution Inc |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 3 (168 Hours) | 85°C | -40°C | SDRAM | 166MHz | Non-RoHS Compliant | 90-TFBGA | 3.6V | 3V | 90 | Parallel | 166MHz | 3V~3.6V | 90-TFBGA (8x13) | 512Mb 16M x 32 | Volatile | 32b | 5.4ns | 166MHz | DRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 6116LA150TDB | Renesas Electronics America Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~125°C TA | Tray | 1 (Unlimited) | SRAM - Asynchronous | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/renesaselectronicsamericainc-6116sa120db-datasheets-4340.pdf | 24-CDIP (0.300, 7.62mm) | 10 Weeks | 4.5V~5.5V | IDT6116 | 16Kb 2K x 8 | Volatile | SRAM | Parallel | 150ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IS61LPS25636A-200TQ2LI | ISSI, Integrated Silicon Solution Inc |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TA | Tray | 2 (1 Year) | SRAM - Synchronous, SDR | 1.6mm | ROHS3 Compliant | 100-LQFP | 20mm | 3.3V | 100 | 12 Weeks | 100 | 9 Mb | 4 | 1 | 275mA | YES | 3.135V~3.465V | QUAD | NOT SPECIFIED | 3.3V | 0.65mm | 3.165V | NOT SPECIFIED | 9Mb 256K x 36 | Volatile | 3.1ns | 200MHz | 18b | SRAM | Parallel | 256KX36 | 36 | 36b | Synchronous | ||||||||||||||||||||||||||||||||||||||||||||||||||
| 6116LA70TDB | Renesas Electronics America Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~125°C TA | Tray | 1 (Unlimited) | SRAM - Asynchronous | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/renesaselectronicsamericainc-6116sa120db-datasheets-4340.pdf | 24-CDIP (0.300, 7.62mm) | 15 Weeks | 4.5V~5.5V | IDT6116 | 16Kb 2K x 8 | Volatile | SRAM | Parallel | 70ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CY62167DV30LL-55ZXIT | Cypress Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MoBL® | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 3 (168 Hours) | SRAM - Asynchronous | 55GHz | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/cypresssemiconductorcorp-cy62167dv30ll55zxi-datasheets-7539.pdf | 48-TFSOP (0.724, 18.40mm Width) | 3V | Lead Free | 48 | 10 Weeks | 48 | 16 Mb | yes | 1 | CONFIGURABLE AS 2M X 8 ALSO | No | 1 | 30mA | e3 | Matte Tin (Sn) | 2.2V~3.6V | DUAL | 260 | 3V | 0.5mm | CY62167 | 3.6V | 2.2V | 30 | 16Mb 1M x 16 | Volatile | 3-STATE | 20b | SRAM | Parallel | 16 | 55ns | 8 | 16b | 55 ns | Asynchronous | COMMON | ||||||||||||||||||||||||||||||||||||||
| 71321SA35TFG | Renesas Electronics America Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 0°C~70°C TA | Tube | 3 (168 Hours) | SRAM - Dual Port, Asynchronous | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/renesaselectronicsamericainc-71321sa55jg-datasheets-8633.pdf | 64-LQFP | 10 Weeks | 4.5V~5.5V | IDT71321 | 64-TQFP | 16Kb 2K x 8 | Volatile | 35ns | SRAM | Parallel | 35ns |
