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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Type | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Voltage - Rated | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Diameter | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Applications | Reference Standard | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Pin Count | Temperature Grade | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Power Supplies | Supply Current-Max | Gain | Qualification Status | JESD-30 Code | Input Capacitance | Turn On Delay Time | Turn-Off Delay Time | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power - Max | Highest Frequency Band | Collector Emitter Breakdown Voltage | Collector Emitter Saturation Voltage | Turn On Time | Collector Emitter Voltage (VCEO) | Max Collector Current | Transition Frequency | Channel Type | Output Characteristics | Organization | Memory Width | Memory Density | Parallel/Serial | Standby Current-Max | Access Time (Max) | I/O Type | Standby Voltage-Min | Memory IC Type | Input | Output Level | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Collector Base Voltage (VCBO) | Turn Off Time-Nom (toff) | VCEsat-Max | Gate-Emitter Voltage-Max | Current - Collector Cutoff (Max) | Vce(on) (Max) @ Vge, Ic | IGBT Type | NTC Thermistor | Input Capacitance (Cies) @ Vce | Transistor Type | DC Current Gain (hFE) (Min) @ Ic, Vce | Collector-Base Capacitance-Max | Noise Figure (dB Typ @ f) | Frequency - Transition | ECCN (US) | Standard Frequency (MHz) | Frequency Stability (ppm) | Load Capacitance (pF) | Minimum Operating Temperature (°C) | Maximum Operating Temperature (°C) | Standard Package Name | Supplier Package | Mounting | Package Height | Package Length | Package Width | PCB changed | Maximum Symmetry (%) | Minimum Operating Supply Voltage (V) | Maximum Operating Supply Voltage (V) | Typical Operating Supply Voltage (V) | Supplier Temperature Grade | Lead Shape | Maximum Power Dissipation (mW) | Military | Maximum Drain Source Voltage (V) | Maximum Gate Source Voltage (V) | Maximum Drain Gate Voltage (V) |
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| JANS DATA-JANS1N6640US | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | RoHS non-compliant | /files/microsemi-grpdatajans1n6640us-datasheets-7832.pdf | 2 | Single | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGF50A60T1G | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | RoHS Compliant | 2007 | /files/microsemicorporation-aptgf50a60t1g-datasheets-7934.pdf | SP1 | 12 | 1 | unknown | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 250W | UPPER | UNSPECIFIED | NOT SPECIFIED | 12 | Dual | NOT SPECIFIED | 2 | Insulated Gate BIP Transistors | Not Qualified | 2.2nF | SILICON | Half Bridge | ISOLATED | MOTOR CONTROL | N-CHANNEL | 250W | 600V | 52 ns | 600V | 65A | Standard | 151 ns | 2.45 V | 20V | 250μA | 2.45V @ 15V, 50A | NPT | Yes | 2.2nF @ 25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N5618/TR | Microsemi |
Min: 1 Mult: 1 |
Switching Diode | Tape and Reel | RoHS non-compliant | /files/microsemi-grpbdatajan1n5614-datasheets-8553.pdf | 2.16(Max) | 2 | Single | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGV25H120BG | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | 1 (Unlimited) | RoHS Compliant | 2012 | SP4 | 21 | 4 | yes | EAR99 | e1 | TIN SILVER COPPER | 156W | UPPER | UNSPECIFIED | 21 | 150°C | 5 | Insulated Gate BIP Transistors | R-XUFM-X21 | 1.8nF | SILICON | Boost Chopper, Full Bridge | ISOLATED | N-CHANNEL | 156W | 1.2kV | 140 ns | 2.1V | 40A | Standard | 1200V | 610 ns | 20V | 250μA | 2.1V @ 15V, 25A | NPT, Trench Field Stop | No | 1.8nF @ 25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SPB80100 | Microsemi |
Min: 1 Mult: 1 |
download | Schottky Diode | RoHS Compliant | /files/microsemi-spb8080-datasheets-4016.pdf | 4 | Quad Common Cathode | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGT75SK60T1G | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~175°C TJ | 1 (Unlimited) | RoHS Compliant | 2007 | /files/microsemicorporation-aptrg8a120g-datasheets-4026.pdf | SP1 | 12 | 22 Weeks | 1 | yes | EAR99 | e1 | TIN SILVER COPPER | 250W | UPPER | THROUGH-HOLE | NOT SPECIFIED | 12 | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | Not Qualified | 4.62nF | SILICON | Single | ISOLATED | MOTOR CONTROL | N-CHANNEL | 250W | 600V | 170 ns | 1.9V | 100A | Standard | 310 ns | 20V | 250μA | 1.9V @ 15V, 75A | Trench Field Stop | Yes | 4.62nF @ 25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GRP-ABC-JAN1N6642 | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Bag | RoHS non-compliant | /files/microsemi-data1n6642jans-datasheets-6025.pdf | 1.91(Max) | 2 | Single | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGT50DH60TG | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount | Chassis Mount | -40°C~175°C TJ | 1 (Unlimited) | RoHS Compliant | /files/microsemicorporation-aptgt50dh60tg-datasheets-8081.pdf | SP4 | 14 | 4 | yes | AVALANCHE RATED | e1 | TIN SILVER COPPER | 176W | UPPER | UNSPECIFIED | NOT SPECIFIED | 14 | NOT SPECIFIED | 2 | Not Qualified | 3.15nF | SILICON | Asymmetrical Bridge | ISOLATED | POWER CONTROL | N-CHANNEL | 176W | 600V | 170 ns | 1.9V | 80A | Standard | 310 ns | 250μA | 1.9V @ 15V, 50A | Trench Field Stop | Yes | 3.15nF @ 25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| LXMG1626-12-45 | Microsemi |
Min: 1 Mult: 1 |
download | RoHS Compliant | /files/microsemi-lxmg16261245-datasheets-6704.pdf | 12 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT150GT120JR | Microsemi |
Min: 1 Mult: 1 |
download | Thunderbolt IGBT® | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | 1 (Unlimited) | RoHS Compliant | 1999 | /files/microsemicorporation-aptrg8a120g-datasheets-4026.pdf | ISOTOP | 38.2mm | 9.6mm | 25.4mm | Lead Free | 4 | 24 Weeks | 30.000004g | 4 | yes | UL RECOGNIZED, HIGH RELIABILITY | 830W | UPPER | UNSPECIFIED | 4 | 1 | 9.3nF | 80 ns | 570 ns | SILICON | Single | ISOLATED | POWER CONTROL | N-CHANNEL | 830W | 1.2kV | 3.2V | 245 ns | 1.2kV | 170A | Standard | 1200V | 710 ns | 150μA | 3.7V @ 15V, 150A | NPT | No | 9.3nF @ 25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTXV1N6858UR-1/TR | Microsemi |
Min: 1 Mult: 1 |
download | Schottky Diode | Tape and Reel | RoHS non-compliant | /files/microsemi-cds1n5711ur1-datasheets-2148.pdf | 1.7(Max) | 2 | Single | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT200GN60JDQ4 | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -55°C~175°C TJ | 1 (Unlimited) | RoHS Compliant | 1999 | /files/microsemicorporation-apt200gn60jg-datasheets-7421.pdf | ISOTOP | 38.2mm | 9.6mm | 25.4mm | 4 | 25 Weeks | 30.000004g | 4 | yes | EAR99 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 682W | UPPER | UNSPECIFIED | 4 | 1 | Insulated Gate BIP Transistors | 14.1nF | SILICON | Single | ISOLATED | POWER CONTROL | N-CHANNEL | 682W | 600V | 1.5V | 130 ns | 600V | 283A | Standard | 660 ns | 20V | 50μA | 1.85V @ 15V, 200A | Trench Field Stop | No | 14.1nF @ 25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GRP-B-DATA-JANTX1N5620US | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Bag | RoHS non-compliant | /files/microsemi-grpbdatajans1n5616us-datasheets-2028.pdf | 2 | Single | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT100GT60JR | Microsemi |
Min: 1 Mult: 1 |
download | Thunderbolt IGBT® | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | 1 (Unlimited) | RoHS Compliant | 1999 | 600V | 148A | ISOTOP | Lead Free | 4 | 24 Weeks | 4 | UL RECOGNIZED | 500W | UPPER | UNSPECIFIED | 4 | 1 | Insulated Gate BIP Transistors | 5.15nF | SILICON | Single | ISOLATED | POWER CONTROL | N-CHANNEL | 600V | 115 ns | 600V | 148A | Standard | 450 ns | 30V | 25μA | 2.5V @ 15V, 100A | NPT | No | 5.15nF @ 25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GRP-ABC-JAN1N5190 | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Bag | RoHS non-compliant | /files/microsemi-grpadatajantx1n5187-datasheets-3585.pdf | 3.42(Max) | 2 | Single | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGT75A60T1G | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~175°C TJ | 1 (Unlimited) | RoHS Compliant | 2007 | /files/microsemicorporation-aptgt75a60t1g-datasheets-0868.pdf | SP1 | 51.6mm | 11.5mm | 40.8mm | Lead Free | 12 | 36 Weeks | 12 | IN PRODUCTION (Last Updated: 3 weeks ago) | yes | EAR99 | e1 | TIN SILVER COPPER | 250W | UPPER | THROUGH-HOLE | NOT SPECIFIED | 12 | Dual | NOT SPECIFIED | 2 | Insulated Gate BIP Transistors | Not Qualified | 4.62nF | 110 ns | 200 ns | SILICON | Half Bridge | ISOLATED | MOTOR CONTROL | N-CHANNEL | 250W | 600V | 1.5V | 170 ns | 600V | 100A | Standard | 310 ns | 1.9 V | 20V | 250μA | 1.9V @ 15V, 75A | Trench Field Stop | Yes | 4.62nF @ 25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MX2N4093 | Microsemi |
Min: 1 Mult: 1 |
download | Bag | RoHS non-compliant | https://pdf.utmel.com/r/datasheets/microsemi-mx2n4093-datasheets-9441.pdf | 5.84(Max) | 3 | Single | N | EAR99 | -65 | 175 | TO-206-AA | TO-18 | Through Hole | 5.33(Max) | 3 | Military | Through Hole | 360 | No | 40 | -40 | 40 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BYI-1F | Microsemi |
Min: 1 Mult: 1 |
download | Stud | Stud Mount | Bulk | 1 (Unlimited) | 55V | RoHS Compliant | 1998 | /files/microsemicorporation-byi1t-datasheets-5691.pdf | 700mA | 55FT | 12 Weeks | 55 | IN PRODUCTION (Last Updated: 1 month ago) | EAR99 | Linear Amplifier Bias | BYSISTOR | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VCC1-B3D-7M37280000 | Microsemi |
Min: 1 Mult: 1 |
download | Crystal Oscillator | Tape and Reel | RoHS Compliant | https://pdf.utmel.com/r/datasheets/microchiptechnology-vcc1f3d63m0000000-datasheets-2181.pdf | 4 | CMOS | EAR99 | 7.3728 | ±50 | 15 | -40 | 85 | Surface Mount | 1.6 | 7 | 5 | 4 | 55 | 2.97 | 3.63 | 3.3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MRF517 | Microsemi |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | RoHS Compliant | 2004 | /files/microsemicorporation-mrf517-datasheets-6351.pdf | TO-205AD, TO-39-3 Metal Can | 3 | 13 Weeks | 3 | IN PRODUCTION (Last Updated: 3 weeks ago) | no | EAR99 | No | 8541.29.00.75 | e0 | TIN LEAD | 2.5W | BOTTOM | WIRE | 3 | 1 | 9dB ~ 10dB | SILICON | SINGLE | AMPLIFIER | NPN | 2.5W | ULTRA HIGH FREQUENCY B | 20V | 20V | 150mA | 4000MHz | 35V | NPN | 50 @ 60mA 10V | 4.5pF | 4GHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GRP-B-DATA-JAN1N4148-1 | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Bag | RoHS non-compliant | /files/microsemi-grpabcjantx1n41481-datasheets-2957.pdf | 2.29(Max) | 2 | Single | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JAN2N4957 | Microsemi |
Min: 1 Mult: 1 |
download | Through Hole | -65°C~200°C TJ | Bulk | 1 (Unlimited) | Non-RoHS Compliant | /files/microsemicorporation-jantx2n4957-datasheets-6855.pdf | TO-72-3 Metal Can | 3 | IN PRODUCTION (Last Updated: 6 months ago) | EAR99 | No | 8541.21.00.95 | e4 | Gold (Au) - with Nickel (Ni) barrier | MIL-19500/426 | YES | DUAL | 3 | 1 | 25dB | Qualified | R-CDSO-N3 | SILICON | SINGLE | AMPLIFIER | PNP | 200mW | ULTRA HIGH FREQUENCY B | 30V | 30mA | PNP | 30 @ 5mA 10V | 0.8pF | 3.5dB @ 450MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANS DATA-JANS1N5804 | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Tray | RoHS non-compliant | /files/microsemi-grpbdatajantx1n5802-datasheets-7299.pdf | 2.16(Max) | 2 | Single | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MRF559T | Microsemi |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | RoHS Compliant | 2004 | OBSOLETE (Last Updated: 3 weeks ago) | 2W | 9.5dB | 2W | 16V | 150mA | 16V | 150mA | NPN | 30 @ 50mA 10V | 870MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| LXMG1623-05-41 | Microsemi |
Min: 1 Mult: 1 |
download | Yes with exemptions | /files/microsemi-lxmg16230541-datasheets-2700.pdf | 12 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 46010 | Microsemi |
Min: 1 Mult: 1 |
download | Not Applicable | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| UES1101SM | Microsemi |
Min: 1 Mult: 1 |
Switching Diode | RoHS non-compliant | /files/microsemi-ues1101sm-datasheets-4537.pdf | 2 | Single | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 64042 | Microsemi |
Min: 1 Mult: 1 |
download | Not Applicable | CMOS | ASYNCHRONOUS | Non-RoHS Compliant | 22 | not_compliant | e0 | Tin/Lead (Sn/Pb) | NO | DUAL | THROUGH-HOLE | 5V | 2.54mm | COMMERCIAL | 70°C | SRAMs | 5V | 0.14mA | Not Qualified | R-PDIP-T22 | 3-STATE | 16KX4 | 4 | 65536 bit | PARALLEL | 0.003A | 20 ns | COMMON | 4.5V | STANDARD SRAM | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N5614/TR | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Tape and Reel | RoHS non-compliant | /files/microsemi-grpbdatajan1n5614-datasheets-8553.pdf | 2.16(Max) | 2 | Single | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 82094 | Microsemi |
Min: 1 Mult: 1 |
download | 1 (Unlimited) |
