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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Type | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Diameter | Package / Case | Lead Free | Number of Terminations | Factory Lead Time | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | JESD-609 Code | Terminal Finish | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Modulation Technique | Product Category | Power - Max | Collector Emitter Breakdown Voltage | Turn On Time | Collector Emitter Voltage (VCEO) | Max Collector Current | Input | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Turn Off Time-Nom (toff) | VCEsat-Max | Gate-Emitter Voltage-Max | Current - Collector Cutoff (Max) | Vce(on) (Max) @ Vge, Ic | IGBT Type | NTC Thermistor | Input Capacitance (Cies) @ Vce |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| APTGT100H120G | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | RoHS Compliant | /files/microsemicorporation-aptgt100h120g-datasheets-3872.pdf | SP6 | 12 | 36 Weeks | 12 | yes | EAR99 | AVALANCHE RATED | e1 | TIN SILVER COPPER | 480W | UPPER | UNSPECIFIED | 12 | 4 | Insulated Gate BIP Transistors | 7.2nF | SILICON | Full Bridge Inverter | ISOLATED | POWER CONTROL | N-CHANNEL | 480W | 1.2kV | 340 ns | 1.2kV | 140A | Standard | 1200V | 610 ns | 2.1 V | 20V | 250μA | 2.1V @ 15V, 100A | Trench Field Stop | No | 7.2nF @ 25V | ||||||||||||||||||||||||||
| 28M0 | Microsemi |
Min: 1 Mult: 1 |
Switching Diode | RoHS non-compliant | /files/microsemi-28m0-datasheets-6384.pdf | 12 | Array 16 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGL120TA120TPG | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~175°C TJ | 1 (Unlimited) | RoHS Compliant | 2009 | /files/microsemicorporation-aptgl120ta120tpg-datasheets-3983.pdf | SP6 | 23 | 36 Weeks | 23 | EAR99 | 517W | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 6 | Insulated Gate BIP Transistors | 6.2nF | SILICON | Three Phase | ISOLATED | MOTOR CONTROL | N-CHANNEL | 517W | 1.2kV | 185 ns | 1.2kV | 140A | Standard | 1200V | 430 ns | 2.15 V | 20V | 250μA | 2.15V @ 15V, 100A | Trench Field Stop | Yes | 6.2nF @ 25V | ||||||||||||||||||||||||||||
| JANTX1N6631 | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Bag | RoHS non-compliant | /files/microsemi-grpabcjantx1n6631-datasheets-0043.pdf | 3.42(Max) | 2 | Single | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGT300TL65G | Microsemi |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | RoHS Compliant | 2012 | 36 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ZL70250UEB2 | Microsemi |
Min: 1 Mult: 1 |
download | Tape and Reel | RoHS non-compliant | /files/microsemi-zl70250uej2-datasheets-4363.pdf | 36 | GFSK | Transceiver | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGT300A120D3G | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | RoHS Compliant | 2012 | /files/microsemicorporation-aptgt300a120d3g-datasheets-4314.pdf | D-3 Module | 7 | 36 Weeks | 7 | yes | EAR99 | e1 | TIN SILVER COPPER | 1.25kW | UPPER | UNSPECIFIED | 7 | Dual | 2 | 20nF | SILICON | Half Bridge | ISOLATED | MOTOR CONTROL | N-CHANNEL | 1250W | 1.2kV | 400 ns | 1.2kV | 440A | Standard | 1200V | 830 ns | 8mA | 2.1V @ 15V, 300A | Trench Field Stop | No | 20nF @ 25V | ||||||||||||||||||||||||||||
| GRP-B-DATA-JANTX1N6631US | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Bag | RoHS non-compliant | /files/microsemi-grpadatajantx1n6631us-datasheets-8612.pdf | 2 | Single | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGT50TL60T3G | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~175°C TJ | 1 (Unlimited) | RoHS Compliant | 2012 | /files/microsemicorporation-aptgt50tl60t3g-datasheets-4780.pdf | SP3 | 16 | 36 Weeks | 32 | EAR99 | No | 176W | UPPER | UNSPECIFIED | 25 | 4 | Insulated Gate BIP Transistors | R-XUFM-X16 | 3.15nF | SILICON | Three Level Inverter | ISOLATED | POWER CONTROL | N-CHANNEL | 176W | 600V | 170 ns | 600V | 80A | Standard | 310 ns | 1.9 V | 20V | 250μA | 1.9V @ 15V, 50A | Trench Field Stop | Yes | 3.15nF @ 25V | ||||||||||||||||||||||||||||
| GRP-ABC-JANTX1N5804 | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Bag | RoHS non-compliant | /files/microsemi-grpbdatajantx1n5802-datasheets-7299.pdf | 2.16(Max) | 2 | Single | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGT75DH120T3G | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | RoHS Compliant | 2012 | /files/microsemicorporation-aptgt75dh120t3g-datasheets-4861.pdf | SP3 | 11 | 36 Weeks | 16 | IN PRODUCTION (Last Updated: 3 weeks ago) | EAR99 | 357W | UPPER | UNSPECIFIED | NOT SPECIFIED | 25 | Dual | NOT SPECIFIED | 2 | Not Qualified | R-XUFM-X11 | 5.34nF | SILICON | Asymmetrical Bridge | ISOLATED | POWER CONTROL | N-CHANNEL | 357W | 1.2kV | 335 ns | 1.2kV | 110A | Standard | 1200V | 610 ns | 250μA | 2.1V @ 15V, 75A | Trench Field Stop | Yes | 5.34nF @ 25V | ||||||||||||||||||||||||||
| GRP-ABC-JANTX1N6642US | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Bag | RoHS non-compliant | /files/microsemi-jantx1n6643ustr-datasheets-8160.pdf | 2 | Single | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGT75H60T3G | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~175°C TJ | 1 (Unlimited) | RoHS Compliant | 2006 | /files/microsemicorporation-aptgt75h60t3g-datasheets-4925.pdf | SP3 | 25 | 36 Weeks | 32 | IN PRODUCTION (Last Updated: 3 weeks ago) | yes | EAR99 | No | e1 | TIN SILVER COPPER | 250W | UPPER | UNSPECIFIED | 25 | 4 | R-XUFM-X25 | 4.62nF | SILICON | Full Bridge Inverter | ISOLATED | MOTOR CONTROL | N-CHANNEL | 250W | 600V | 170 ns | 600V | 100A | Standard | 310 ns | 250μA | 1.9V @ 15V, 75A | Trench Field Stop | Yes | 4.62nF @ 25V | |||||||||||||||||||||||||||
| GRP-ABC-JANTX1N4944 | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Bag | RoHS non-compliant | /files/microsemi-grpadatajan1n4944-datasheets-3350.pdf | 2.16(Max) | 2 | Single | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGT25X120T3G | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | RoHS Compliant | 2007 | /files/microsemicorporation-aptgt25x120t3g-datasheets-4998.pdf | SP3 | 25 | 36 Weeks | 22 | yes | EAR99 | e1 | TIN SILVER COPPER | 156W | UPPER | UNSPECIFIED | NOT SPECIFIED | 25 | NOT SPECIFIED | 6 | Insulated Gate BIP Transistors | Not Qualified | R-XUFM-X25 | 1.8nF | SILICON | Three Phase Inverter | ISOLATED | MOTOR CONTROL | N-CHANNEL | 156W | 1.2kV | 140 ns | 1.2kV | 40A | Standard | 1200V | 610 ns | 2.1 V | 20V | 250μA | 2.1V @ 15V, 25A | Trench Field Stop | Yes | 1.8nF @ 25V | ||||||||||||||||||||||
| GRP-B-DATA-JANTX1N3957 | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Bag | RoHS non-compliant | /files/microsemi-grpbdatajan1n3611-datasheets-4721.pdf | 2.16(Max) | 2 | Single | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGLQ50H65T3G | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount | -40°C~175°C TJ | RoHS Compliant | 2012 | /files/microsemicorporation-aptglq50h65t3g-datasheets-5078.pdf | Module | 36 Weeks | SP3F | Full Bridge | 175W | Standard | 650V | 70A | 50μA | 2.3V @ 15V, 50A | Trench Field Stop | Yes | 3.1nF @ 25V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N914E3 | Microsemi |
Min: 1 Mult: 1 |
Switching Diode | Yes with exemptions | /files/microsemi-1n914tr-datasheets-4494.pdf | 2.29(Max) | 2 | Single | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGT100DH120TG | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | 1 (Unlimited) | 150°C | -40°C | RoHS Compliant | /files/microsemicorporation-aptgt100dh120tg-datasheets-5194.pdf | SP4 | 14 | 36 Weeks | 20 | yes | EAR99 | e1 | TIN SILVER COPPER | 480W | UPPER | UNSPECIFIED | NOT SPECIFIED | 14 | Dual | NOT SPECIFIED | 2 | Not Qualified | R-XUFM-X14 | 7.2nF | Asymmetrical Bridge | ISOLATED | POWER CONTROL | N-CHANNEL | 1.2kV | 340 ns | 1.2kV | 140A | Standard | 1200V | 610 ns | 250μA | 2.1V @ 15V, 100A | Trench Field Stop | Yes | 7.2nF @ 25V | ||||||||||||||||||||||||||
| DATA-JANS1N5811US | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Waffle | RoHS non-compliant | /files/microsemi-1n5811aus-datasheets-6164.pdf | 2 | Single | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGT200DH60G | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~175°C TJ | 1 (Unlimited) | RoHS Compliant | 2006 | /files/microsemicorporation-aptgt200dh60g-datasheets-5303.pdf | SP6 | 8 | 36 Weeks | 8 | yes | EAR99 | AVALANCHE RATED | e1 | TIN SILVER COPPER | 625W | UPPER | UNSPECIFIED | 8 | Dual | 2 | 12.3nF | SILICON | Asymmetrical Bridge | ISOLATED | POWER CONTROL | N-CHANNEL | 625W | 600V | 180 ns | 600V | 290A | Standard | 370 ns | 250μA | 1.9V @ 15V, 200A | Trench Field Stop | No | 12.3nF @ 25V | ||||||||||||||||||||||||||||
| R43100 | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Tray | RoHS non-compliant | /files/microsemi-s43100ts-datasheets-5381.pdf | 2 | Single | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGT150SK120G | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | RoHS Compliant | 2006 | /files/microsemicorporation-aptgt150sk120g-datasheets-5443.pdf | SP6 | 5 | 36 Weeks | 5 | yes | EAR99 | AVALANCHE RATED | e1 | TIN SILVER COPPER | 690W | UPPER | UNSPECIFIED | 5 | 1 | 10.7nF | SILICON | Single | ISOLATED | POWER CONTROL | N-CHANNEL | 690W | 1.2kV | 335 ns | 1.2kV | 220A | Standard | 1200V | 610 ns | 350μA | 2.1V @ 15V, 150A | Trench Field Stop | No | 10.7nF @ 25V | ||||||||||||||||||||||||||||
| JANS DATA-JANS1N5819-1 | Microsemi |
Min: 1 Mult: 1 |
download | Schottky Diode | Tray | RoHS non-compliant | /files/microsemi-grpabcjan1n58191-datasheets-3027.pdf | 2.72(Max) | 2 | Single | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT40GP60JDQ2 | Microsemi |
Min: 1 Mult: 1 |
download | POWER MOS 7® | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | 1 (Unlimited) | RoHS Compliant | 1999 | /files/microsemicorporation-apt40gp60jdq2-datasheets-7510.pdf | 600V | 86A | SOT-227-4, miniBLOC | Lead Free | 4 | 30 Weeks | 4 | yes | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 284W | UPPER | UNSPECIFIED | 4 | 1 | Insulated Gate BIP Transistors | 4.61nF | SILICON | Single | ISOLATED | POWER CONTROL | N-CHANNEL | 600V | 49 ns | 600V | 86A | Standard | 160 ns | 30V | 500μA | 2.7V @ 15V, 40A | PT | No | 4.61nF @ 25V | ||||||||||||||||||||||||||
| JANTXV1N6765 | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Tray | RoHS non-compliant | /files/microsemi-jantxv1n6765-datasheets-2052.pdf | 3 | Dual Common Cathode | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGF165A60D1G | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | 1 (Unlimited) | 150°C | -40°C | RoHS Compliant | 2010 | /files/microsemicorporation-aptrg8a120g-datasheets-4026.pdf | D1 | 7 | No | 781W | Dual | D1 | 9nF | Half Bridge | 781W | 600V | 600V | 230A | Standard | 600V | 230A | 250μA | 2.45V @ 15V, 200A | NPT | No | 9nF @ 25V | ||||||||||||||||||||||||||||||||||||||||
| UPS5817 | Microsemi |
Min: 1 Mult: 1 |
download | Schottky Diode | RoHS non-compliant | /files/microsemi-ups5819tr7-datasheets-0416.pdf | 2 | Single | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGF25DDA120T3G | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | 1 (Unlimited) | 150°C | -40°C | RoHS Compliant | 2012 | /files/microsemicorporation-aptgf25dda120t3g-datasheets-7639.pdf | SP3 | 25 | 32 | yes | EAR99 | e1 | TIN SILVER COPPER | 208W | UPPER | UNSPECIFIED | NOT SPECIFIED | 25 | Dual | NOT SPECIFIED | 2 | Insulated Gate BIP Transistors | Not Qualified | R-XUFM-X25 | 1.65nF | Dual Boost Chopper | ISOLATED | MOTOR CONTROL | N-CHANNEL | 1.2kV | 110 ns | 1.2kV | 40A | Standard | 1200V | 386 ns | 3.7 V | 20V | 250μA | 3.7V @ 15V, 25A | NPT | Yes | 1.65nF @ 25V | |||||||||||||||||||||||
| MX1N5806 | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | RoHS non-compliant | /files/microsemi-mq1n5806-datasheets-0728.pdf | 2.16(Max) | 2 | Single |
