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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Frequency | Operating Supply Current | Operating Mode | Height Seated (Max) | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Operating Supply Voltage | Lead Free | Number of Terminations | Factory Lead Time | Max Supply Voltage | Min Supply Voltage | Number of Pins | Interface | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Max Frequency | Reach Compliance Code | HTS Code | JESD-609 Code | Feature | Terminal Finish | Applications | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Supply Voltage-Max (Vsup) | Supply Voltage-Min (Vsup) | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Power Supplies | Qualification Status | JESD-30 Code | Supplier Device Package | Data Rate | Memory Size | Number of I/O | Peripherals | Core Architecture | RAM Size | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | Supply Type | Architecture | DS Breakdown Voltage-Min | FET Technology | Number of Outputs | Speed | Power - Max | Power Dissipation-Max | Number of Inputs | Number of Gates | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Core Processor | Connectivity | Number of Logic Elements/Cells | Number of Logic Blocks (LABs) | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Programmable Logic Type | Primary Attributes | Number of Logic Cells | Flash Size | Multiplexer/Demultiplexer Circuit | Voltage - Supply, Single (V+) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| VSC3316XJK | Microsemi |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Tray | 4 (72 Hours) | RoHS Compliant | 2010 | /files/microsemicorporation-vsc3316xjk60-datasheets-2589.pdf | 196-BBGA, FCBGA | 8 Weeks | Advanced Signal Equalization | Backplane, Telecommunications, Video | 16 | Single | 16:16 | 2.5V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| M2S060-FCS325 | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion®2 | 0°C~85°C TJ | Tray | 3 (168 Hours) | CMOS | 1.01mm | Non-RoHS Compliant | 2015 | /files/microsemicorporation-m2s025vfg256i-datasheets-0685.pdf | 325-TFBGA, CSPBGA | 11mm | 11mm | 325 | 12 Weeks | IN PRODUCTION (Last Updated: 2 weeks ago) | LG-MIN, WD-MIN | not_compliant | 8542.39.00.01 | e0 | Tin/Lead (Sn/Pb) | YES | BOTTOM | BALL | NOT SPECIFIED | 1.2V | 0.5mm | 1.26V | 1.14V | NOT SPECIFIED | Field Programmable Gate Arrays | 1.2V | Not Qualified | S-PBGA-B325 | 200 | DDR, PCIe, SERDES | 64KB | MCU, FPGA | 200 | 166MHz | 200 | ARM® Cortex®-M3 | CANbus, Ethernet, I2C, SPI, UART/USART, USB | FIELD PROGRAMMABLE GATE ARRAY | FPGA - 60K Logic Modules | 56520 | 256KB | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTM50H14FT3G | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2006 | /files/microsemicorporation-aptm50h14ft3g-datasheets-6866.pdf | SP3 | 73.4mm | 11.5mm | 40.8mm | 25 | 16 Weeks | 32 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 208W | UPPER | UNSPECIFIED | 25 | 1 | Single | 208W | 4 | R-XUFM-X25 | 10 ns | 17ns | 41 ns | 50 ns | 26A | 30V | SILICON | ISOLATED | SWITCHING | 500V | 500V | METAL-OXIDE SEMICONDUCTOR | 4 N-Channel (H-Bridge) | 3259pF @ 25V | 168m Ω @ 13A, 10V | 5V @ 1mA | 72nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| M2S025-VF256I | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion®2 | -40°C~100°C TJ | Tray | 3 (168 Hours) | CMOS | 1.56mm | Non-RoHS Compliant | 2015 | /files/microsemicorporation-m2s025vfg256i-datasheets-0685.pdf | 256-LFBGA | 14mm | 14mm | 256 | 6 Weeks | LG-MIN, WD-MIN | not_compliant | 8542.39.00.01 | e0 | Tin/Lead (Sn/Pb) | YES | BOTTOM | BALL | NOT SPECIFIED | 1.2V | 0.8mm | 1.26V | 1.14V | NOT SPECIFIED | Field Programmable Gate Arrays | 1.2V | Not Qualified | S-PBGA-B256 | 138 | DDR, PCIe, SERDES | 64KB | MCU, FPGA | 138 | 166MHz | 138 | ARM® Cortex®-M3 | CANbus, Ethernet, I2C, SPI, UART/USART, USB | FIELD PROGRAMMABLE GATE ARRAY | FPGA - 25K Logic Modules | 27696 | 256KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTML602U12R020T3AG | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2012 | /files/microsemicorporation-aptml602u12r020t3ag-datasheets-9469.pdf | SP3 | 32 | 36 Weeks | 3 | IN PRODUCTION (Last Updated: 1 month ago) | EAR99 | No | 568W | UPPER | UNSPECIFIED | 32 | 568W | 2 | 45A | 20V | SILICON | ISOLATED | SWITCHING | 600V | 600V | METAL-OXIDE SEMICONDUCTOR | 0.15Ohm | 2 N-Channel (Dual) | 7600pF @ 25V | 150m Ω @ 22.5A, 10V | 4V @ 2.5mA | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| M2S025-1VF400 | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion®2 | 0°C~85°C TJ | Tray | 3 (168 Hours) | 85°C | 0°C | 166MHz | Non-RoHS Compliant | 2009 | /files/microsemicorporation-m2s005svfg256i-datasheets-1572.pdf | 400-LFBGA | 8 Weeks | 400 | CAN, Ethernet, I2C, SPI, UART, USART, USB | IN PRODUCTION (Last Updated: 1 month ago) | M2S025 | 400-VFBGA (17x17) | 207 | DDR, PCIe, SERDES | ARM | 64KB | MCU, FPGA | 166MHz | ARM® Cortex®-M3 | CANbus, Ethernet, I2C, SPI, UART/USART, USB | FPGA - 25K Logic Modules | 256KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTMC120AM12CT3AG | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Through Hole | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | RoHS Compliant | 1997 | /files/microsemicorporation-aptmc120am12ct3ag-datasheets-9525.pdf | SP3 | 36 Weeks | 3 | IN PRODUCTION (Last Updated: 1 month ago) | EAR99 | 925W | NOT SPECIFIED | NOT SPECIFIED | 35 ns | 40ns | 70 ns | 150 ns | 220A | 1200V 1.2kV | 2 N Channel (Phase Leg) | 8400pF @ 1000V | 12m Ω @ 150A, 20V | 2.4V @ 30mA (Typ) | 220A Tc | 483nC @ 20V | Silicon Carbide (SiC) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| A2F200M3F-1CSG288 | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion® | Surface Mount | 0°C~85°C TJ | Tray | 3 (168 Hours) | 85°C | 0°C | 100MHz | RoHS Compliant | 2013 | /files/microsemicorporation-a2f500m3gfgg484i-datasheets-0641.pdf | 288-TFBGA, CSPBGA | 1.5V | 12 Weeks | 1.575V | 1.425V | 288 | EBI/EMI, Ethernet, I2C, SPI, UART, USART | A2F200 | 288-CSP (11x11) | MCU - 31, FPGA - 78 | DMA, POR, WDT | ARM | 64KB | MCU, FPGA | 100MHz | ARM® Cortex®-M3 | EBI/EMI, Ethernet, I2C, SPI, UART/USART | ProASIC®3 FPGA, 200K Gates, 4608 D-Flip-Flops | 256KB | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTMC120AM08CD3AG | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | RoHS Compliant | 1997 | /files/microsemicorporation-aptmc120am08cd3ag-datasheets-9758.pdf | D-3 Module | Lead Free | 22 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | EAR99 | 1.1kW | 1 | FET General Purpose Power | 250A | 1200V 1.2kV | METAL-OXIDE SEMICONDUCTOR | 1100W | 260A | 2 N-Channel (Half Bridge) | 9500pF @ 1000V | 10m Ω @ 200A, 20V | 2.2V @ 10mA (Typ) | 250A Tc | 490nC @ 20V | Silicon Carbide (SiC) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| M2S060-FGG484 | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion®2 | 0°C~85°C TJ | Tray | 3 (168 Hours) | CMOS | 2.44mm | RoHS Compliant | 2015 | /files/microsemicorporation-m2s025vfg256i-datasheets-0685.pdf | 484-BGA | 23mm | 23mm | 484 | 11 Weeks | IN PRODUCTION (Last Updated: 2 weeks ago) | 8542.39.00.01 | e3 | MATTE TIN | YES | BOTTOM | BALL | NOT SPECIFIED | 1.2V | 1mm | 1.26V | 1.14V | NOT SPECIFIED | Field Programmable Gate Arrays | 1.2V | Not Qualified | S-PBGA-B484 | 267 | DDR, PCIe, SERDES | 64KB | MCU, FPGA | 267 | 166MHz | 267 | ARM® Cortex®-M3 | CANbus, Ethernet, I2C, SPI, UART/USART, USB | FIELD PROGRAMMABLE GATE ARRAY | FPGA - 60K Logic Modules | 56520 | 256KB | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTC80DSK29T3G | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2016 | /files/microsemicorporation-aptc80dsk29t3g-datasheets-5053.pdf | SP3 | 25 | 3 | AVALANCHE RATED | unknown | e1 | TIN SILVER COPPER | 156W | UPPER | UNSPECIFIED | NOT SPECIFIED | 25 | NOT SPECIFIED | 156W | 2 | Not Qualified | 15A | 30V | SILICON | ISOLATED | SWITCHING | 800V | 800V | METAL-OXIDE SEMICONDUCTOR | 60A | 670 mJ | 2 N-Channel (Dual) | 2254pF @ 25V | 290m Ω @ 7.5A, 10V | 3.9V @ 1mA | 90nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| M2S050-1FCS325I | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion®2 | -40°C~100°C TJ | Tray | 3 (168 Hours) | CMOS | 1.01mm | Non-RoHS Compliant | /files/microsemicorporation-m2s025vfg256i-datasheets-0685.pdf | 325-TFBGA, CSPBGA | 11mm | 11mm | 325 | 10 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | LG-MIN, WD-MIN | not_compliant | 8542.39.00.01 | e0 | Tin/Lead (Sn/Pb) | YES | BOTTOM | BALL | NOT SPECIFIED | 1.2V | 0.5mm | 1.26V | 1.14V | NOT SPECIFIED | Field Programmable Gate Arrays | 1.2V | Not Qualified | S-PBGA-B325 | 200 | DDR, PCIe, SERDES | 64KB | MCU, FPGA | 200 | 166MHz | 200 | ARM® Cortex®-M3 | CANbus, Ethernet, I2C, SPI, UART/USART, USB | FIELD PROGRAMMABLE GATE ARRAY | FPGA - 50K Logic Modules | 56340 | 256KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTM50DUM17G | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2012 | /files/microsemicorporation-aptrg8a120g-datasheets-4026.pdf | SP6 | 7 | 22 Weeks | 6 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 1.25kW | UPPER | UNSPECIFIED | 7 | 1.25kW | 2 | R-XUFM-X7 | 21 ns | 38ns | 93 ns | 75 ns | 180A | 30V | SILICON | ISOLATED | SWITCHING | 500V | 500V | METAL-OXIDE SEMICONDUCTOR | 1250W | 3000 mJ | 2 N-Channel (Dual) | 28000pF @ 25V | 20m Ω @ 90A, 10V | 5V @ 10mA | 560nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| M2S050T-1FCSG325I | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion®2 | -40°C~100°C TJ | Tray | 3 (168 Hours) | CMOS | 1.01mm | RoHS Compliant | /files/microsemicorporation-m2s025vfg256i-datasheets-0685.pdf | 325-TFBGA, CSPBGA | 11mm | 11mm | 325 | 10 Weeks | IN PRODUCTION (Last Updated: 2 weeks ago) | LG-MIN, WD-MIN | 8542.39.00.01 | e3 | MATTE TIN | YES | BOTTOM | BALL | NOT SPECIFIED | 1.2V | 0.5mm | 1.26V | 1.14V | NOT SPECIFIED | Field Programmable Gate Arrays | 1.2V | Not Qualified | S-PBGA-B325 | 200 | DDR, PCIe, SERDES | 64KB | MCU, FPGA | 200 | 166MHz | 200 | ARM® Cortex®-M3 | CANbus, Ethernet, I2C, SPI, UART/USART, USB | FIELD PROGRAMMABLE GATE ARRAY | FPGA - 50K Logic Modules | 56340 | 256KB | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTC80A15T1G | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2007 | /files/microsemicorporation-aptc80a15t1g-datasheets-5175.pdf | SP1 | 12 | 1 | AVALANCHE RATED | unknown | e1 | TIN SILVER COPPER | 277W | UPPER | UNSPECIFIED | NOT SPECIFIED | 12 | NOT SPECIFIED | 277W | 2 | FET General Purpose Power | Not Qualified | 28A | 30V | SILICON | ISOLATED | SWITCHING | 800V | 800V | METAL-OXIDE SEMICONDUCTOR | 670 mJ | 2 N-Channel (Half Bridge) | 4507pF @ 25V | 150m Ω @ 14A, 10V | 3.9V @ 2mA | 180nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| M2S050T-VFG400 | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion®2 | 0°C~85°C TJ | Tray | 3 (168 Hours) | 85°C | 0°C | 166MHz | RoHS Compliant | 2009 | /files/microsemicorporation-m2s050tfgg484-datasheets-1246.pdf | 400-LFBGA | 8 Weeks | 400 | CAN, Ethernet, I2C, SPI, UART, USART, USB | IN PRODUCTION (Last Updated: 1 month ago) | M2S050T | 400-VFBGA (17x17) | 207 | DDR, PCIe, SERDES | ARM | 64KB | MCU, FPGA | 166MHz | ARM® Cortex®-M3 | CANbus, Ethernet, I2C, SPI, UART/USART, USB | FPGA - 50K Logic Modules | 256KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTC80DDA15T3G | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | /files/microsemicorporation-aptc80dda15t3g-datasheets-0389.pdf | SP3 | 25 | 36 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 277W | UPPER | UNSPECIFIED | 25 | 277W | 2 | FET General Purpose Power | 10 ns | 13ns | 35 ns | 83 ns | 28A | 30V | SILICON | ISOLATED | SWITCHING | 800V | 800V | METAL-OXIDE SEMICONDUCTOR | 110A | 0.15Ohm | 670 mJ | 2 N-Channel (Dual) | 4507pF @ 25V | 150m Ω @ 14A, 10V | 3.9V @ 2mA | 180nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| M2S025TS-VF400 | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion®2 | 0°C~85°C TJ | Tray | 3 (168 Hours) | CMOS | 1.51mm | Non-RoHS Compliant | 2015 | /files/microsemicorporation-m2s025vfg256i-datasheets-0685.pdf | 400-LFBGA | 17mm | 17mm | 400 | 10 Weeks | IN PRODUCTION (Last Updated: 2 weeks ago) | not_compliant | 8542.39.00.01 | e0 | Tin/Lead (Sn/Pb) | YES | BOTTOM | BALL | NOT SPECIFIED | 1.2V | 0.8mm | 1.26V | 1.14V | NOT SPECIFIED | Field Programmable Gate Arrays | 1.2V | Not Qualified | S-PBGA-B400 | 207 | DDR, PCIe, SERDES | 64KB | MCU, FPGA | 207 | 166MHz | 207 | ARM® Cortex®-M3 | CANbus, Ethernet, I2C, SPI, UART/USART, USB | FIELD PROGRAMMABLE GATE ARRAY | FPGA - 25K Logic Modules | 27696 | 256KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTC60VDAM24T3G | Microsemi |
Min: 1 Mult: 1 |
download | CoolMOS™ | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Tray | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2012 | /files/microsemicorporation-aptc60vdam24t3g-datasheets-0449.pdf | SP3 | 20 | 36 Weeks | 3 | IN PRODUCTION (Last Updated: 2 weeks ago) | EAR99 | AVALANCHE RATED, ULTRA-LOW RESISTANCE | No | 462W | UPPER | UNSPECIFIED | 25 | 2 | FET General Purpose Power | 21 ns | 30ns | 45 ns | 100 ns | 95A | 20V | SILICON | ISOLATED | SWITCHING | 600V | 600V | METAL-OXIDE SEMICONDUCTOR | 1900 mJ | 2 N-Channel (Dual) | 14400pF @ 25V | 24m Ω @ 47.5A, 10V | 3.9V @ 5mA | 300nC @ 10V | Super Junction | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| A2F200M3F-1PQ208I | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion® | -40°C~100°C TJ | Tray | 3 (168 Hours) | 100°C | -40°C | 100MHz | Non-RoHS Compliant | 2015 | /files/microsemicorporation-a2f500m3gfgg484i-datasheets-0641.pdf | 208-BFQFP | 208 | EBI/EMI, Ethernet, I2C, SPI, UART, USART | 100MHz | A2F200 | 208-PQFP (28x28) | MCU - 22, FPGA - 66 | DMA, POR, WDT | ARM | 64KB | MCU, FPGA | 100MHz | ARM® Cortex®-M3 | EBI/EMI, Ethernet, I2C, SPI, UART/USART | 8 | ProASIC®3 FPGA, 200K Gates, 4608 D-Flip-Flops | 256KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTM50H15FT1G | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2007 | /files/microsemicorporation-aptm50h15ft1g-datasheets-0488.pdf | SP1 | 12 | 36 Weeks | 1 | EAR99 | AVALANCHE RATED | No | 208W | UPPER | UNSPECIFIED | 12 | 208W | 4 | FET General Purpose Power | 29 ns | 35ns | 26 ns | 80 ns | 25A | 30V | SILICON | COMPLEX | ISOLATED | SWITCHING | 500V | 500V | METAL-OXIDE SEMICONDUCTOR | 4 N-Channel (H-Bridge) | 5448pF @ 25V | 180m Ω @ 21A, 10V | 5V @ 1mA | 170nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| A2F060M3E-FGG256 | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion® | Surface Mount | 0°C~85°C TJ | Tray | 3 (168 Hours) | CMOS | 80MHz | 3mA | 1.7mm | RoHS Compliant | 2015 | /files/microsemicorporation-a2f060m3etq144-datasheets-5555.pdf | 256-LBGA | 17mm | 17mm | 1.5V | 256 | 2 Weeks | 1.575V | 1.425V | 256 | EBI/EMI, I2C, SPI, UART, USART | 8542.39.00.01 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | BALL | 250 | 1.5V | 1mm | A2F060M3E | 30 | 400 kbps | 4.5kB | MCU - 26, FPGA - 66 | DMA, POR, WDT | ARM | 16KB | MCU, FPGA | 60000 | ARM® Cortex®-M3 | EBI/EMI, I2C, SPI, UART/USART | 660 | FIELD PROGRAMMABLE GATE ARRAY | ProASIC®3 FPGA, 60K Gates, 1536D-Flip-Flops | 128KB | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTM10TAM19FPG | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2012 | /files/microsemicorporation-aptm10tam19fpg-datasheets-0554.pdf | SP6 | 21 | 36 Weeks | 6 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 208W | UPPER | UNSPECIFIED | 21 | 208W | 6 | R-XUFM-X21 | 35 ns | 70ns | 125 ns | 95 ns | 70A | 30V | SILICON | 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 100V | 100V | METAL-OXIDE SEMICONDUCTOR | 300A | 0.021Ohm | 1500 mJ | 6 N-Channel (3-Phase Bridge) | 5100pF @ 25V | 21m Ω @ 35A, 10V | 4V @ 1mA | 200nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| M2S050S-1FG896I | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion®2 | -40°C~100°C TJ | Tray | 3 (168 Hours) | 100°C | -40°C | 166MHz | Non-RoHS Compliant | 2016 | /files/microsemicorporation-m2s005svfg256i-datasheets-1572.pdf | 896-BGA | CAN, Ethernet, I2C, SPI, UART, USART, USB | M2S050S | 896-FBGA (31x31) | 377 | DDR, PCIe, SERDES | ARM | 64KB | MCU, FPGA | 166MHz | ARM® Cortex®-M3 | CANbus, Ethernet, I2C, SPI, UART/USART, USB | FPGA - 50K Logic Modules | 256KB | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTC60AM83B1G | Microsemi |
Min: 1 Mult: 1 |
download | CoolMOS™ | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Tray | 1 (Unlimited) | RoHS Compliant | 2016 | SP1 | 22 Weeks | 1 | EAR99 | No | 250W | 250W | 3 | Other Transistors | 21 ns | 30ns | 32 ns | 240 ns | 36A | 20V | 600V | METAL-OXIDE SEMICONDUCTOR | 49A | 3 N Channel (Phase Leg + Boost Chopper) | 7200pF @ 25V | 83m Ω @ 24.5A, 10V | 5V @ 3mA | 250nC @ 10V | Super Junction | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| M2S100T-1FCG1152 | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion®2 | 0°C~85°C TJ | Tray | 3 (168 Hours) | CMOS | 166MHz | 2.9mm | RoHS Compliant | 2009 | /files/microsemicorporation-m2s005svfg256i-datasheets-1572.pdf | 1152-BBGA, FCBGA | 35mm | 35mm | CAN, Ethernet, I2C, SPI, UART, USART, USB | 8542.39.00.01 | YES | BOTTOM | BALL | NOT SPECIFIED | 1.2V | 1mm | M2S100T | 1.26V | 1.14V | NOT SPECIFIED | Field Programmable Gate Arrays | 1.2V | Not Qualified | S-PBGA-B1152 | 574 | DDR, PCIe, SERDES | ARM | 64KB | MCU, FPGA | 574 | 574 | ARM® Cortex®-M3 | CANbus, Ethernet, I2C, SPI, UART/USART, USB | FIELD PROGRAMMABLE GATE ARRAY | FPGA - 100K Logic Modules | 99512 | 512KB | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTML102UM09R004T3AG | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2016 | SP3 | 10 | 22 Weeks | 3 | EAR99 | No | 480W | UPPER | UNSPECIFIED | 25 | 480W | 2 | FET General Purpose Power | R-XUFM-X10 | 154A | 30V | SILICON | ISOLATED | SWITCHING | 100V | 100V | METAL-OXIDE SEMICONDUCTOR | 0.01Ohm | 2 N-Channel (Dual) | 9875pF @ 25V | 10m Ω @ 69.5A, 10V | 4V @ 2.5mA | 154A Tc | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| M2S100-1FCG1152I | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion®2 | -40°C~100°C TJ | Tray | 3 (168 Hours) | CMOS | 166MHz | 2.9mm | RoHS Compliant | 2009 | /files/microsemicorporation-m2s005svfg256i-datasheets-1572.pdf | 1152-BBGA, FCBGA | 35mm | 35mm | CAN, Ethernet, I2C, SPI, UART, USART, USB | YES | BOTTOM | BALL | NOT SPECIFIED | 1.2V | 1mm | M2S100 | 1.26V | 1.14V | NOT SPECIFIED | Field Programmable Gate Arrays | 1.2V | Not Qualified | S-PBGA-B1152 | 574 | DDR, PCIe, SERDES | ARM | 64KB | MCU, FPGA | 574 | 574 | ARM® Cortex®-M3 | CANbus, Ethernet, I2C, SPI, UART/USART, USB | FIELD PROGRAMMABLE GATE ARRAY | FPGA - 100K Logic Modules | 99512 | 512KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT18M80B | Microsemi |
Min: 1 Mult: 1 |
download | POWER MOS 8™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | /files/microsemicorporation-apt18m80b-datasheets-2819.pdf | 800V | 18A | TO-247-3 | Lead Free | 3 | 8 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | yes | EAR99 | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | 3 | 500W | 1 | R-PSFM-T3 | 21 ns | 31ns | 27 ns | 95 ns | 19A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 500W Tc | 70A | 0.53Ohm | 795 mJ | N-Channel | 3760pF @ 25V | 530m Ω @ 9A, 10V | 5V @ 1mA | 19A Tc | 120nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| M2S100S-1FCG1152I | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion®2 | -40°C~100°C TJ | Tray | 3 (168 Hours) | 100°C | -40°C | 166MHz | RoHS Compliant | 2009 | /files/microsemicorporation-m2s005svfg256i-datasheets-1572.pdf | 1152-BBGA, FCBGA | CAN, Ethernet, I2C, SPI, UART, USART, USB | M2S100S | 1152-FCBGA (35x35) | 574 | DDR, PCIe, SERDES | ARM | 64KB | MCU, FPGA | 166MHz | ARM® Cortex®-M3 | CANbus, Ethernet, I2C, SPI, UART/USART, USB | FPGA - 100K Logic Modules | 512KB |
