Products
Manufacturer
RFQ
NEWS
ContactMicrosemi(18086)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Type | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Height Seated (Max) | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Diameter | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | Max Supply Voltage | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | Number of Functions | Evaluation Kit | JESD-609 Code | Terminal Finish | Polarity | Reference Standard | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Terminal Pitch | Base Part Number | Pin Count | Temperature Grade | Analog IC - Other Type | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Output Voltage | Output Current | Forward Current | Forward Voltage | Max Surge Current | Rise Time | Fall Time (Typ) | Configuration | Case Connection | Modulation Technique | Application | Product Category | Natural Thermal Resistance | Speed | Input Voltage-Nom | Input Voltage (Min) | Output Voltage-Max | Output Voltage-Min | Diode Element Material | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Current-Max | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Number of Phases | Output Current-Max | Reverse Voltage (DC) | Topology | Control Mode | Control Technique | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Frequency - Switching | Current - Average Rectified (Io) | Operating Temperature - Junction | Diode Configuration | Duty Cycle (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PD-IM-7608AH | Microsemi |
Min: 1 Mult: 1 |
RoHS Compliant | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CPT40145 | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | Bulk | 1 (Unlimited) | 150°C | -55°C | RoHS Compliant | 2012 | /files/microsemicorporation-cpt40145d-datasheets-5342.pdf | MD3CC | Lead Free | 2 | 3 | EAR99 | No | 8541.10.00.80 | UPPER | UNSPECIFIED | 2 | Common Cathode | 2 | R-XUFM-X2 | 400A | 570mV | POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10mA | 45V | 3kA | Schottky | 45V | 200A | 1 | 10mA @ 45V | 570mV @ 200A | 1 Pair Common Cathode | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SG7824T-883B | Microsemi |
Min: 1 Mult: 1 |
Through Hole | Non-RoHS Compliant | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| UPS120EE3/TR7 | Microsemi |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 125°C | -55°C | RoHS Compliant | 1997 | /files/microsemicorporation-ups120ee3tr7-datasheets-0646.pdf | 20V | 1A | DO-216AA | Lead Free | 1 | 19 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | EAR99 | No | 8541.10.00.80 | e3 | Matte Tin (Sn) - annealed | Standard | GULL WING | UPS120 | 1 | Single | 1 | Rectifier Diodes | S-PSSO-G1 | 1A | 1A | 455mV | CATHODE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 50A | 10μA | 20V | 50A | Schottky | 20V | 1A | 20V | 10μA @ 20V | 530mV @ 1A | -55°C~125°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SG2526J | Microsemi |
Min: 1 Mult: 1 |
Through Hole | 85°C | -25°C | BIPOLAR | 5.08mm | Non-RoHS Compliant | CDIP | 24.38mm | 7.62mm | 18 | 35V | 18 | OBSOLETE (Last Updated: 1 month ago) | no | EAR99 | "LG=MAX" | Yes | not_compliant | 8542.39.00.01 | 1 | e0 | Tin/Lead (Sn/Pb) | DUAL | NOT SPECIFIED | 2.54mm | 18 | COMMERCIAL | SWITCHING CONTROLLER | NOT SPECIFIED | Switching Regulator or Controllers | Not Qualified | 5V | 300ns | 100 ns | 15V | 8V | 5.05V | 4.95V | 0.2A | Push-Pull | VOLTAGE-MODE | PULSE WIDTH MODULATION | 350kHz | 49 % | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N5615 | Microsemi |
Min: 1 Mult: 1 |
download | Military, MIL-PRF-19500/429 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -55°C | AVALANCHE | Non-RoHS Compliant | 1997 | /files/microsemicorporation-jan1n5617-datasheets-5896.pdf | 200V | 1A | A, Axial | Contains Lead | 2 | 12 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | EAR99 | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | WIRE | 1N5615 | 2 | Single | 1 | Qualified | 1A | 1.6V | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500nA | 200V | 30A | 150 ns | Standard | 200V | 1A | 45pF @ 12V 1MHz | 500nA @ 200V | 1.6V @ 3A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| C2560A1-0080 | Microsemi |
Min: 1 Mult: 1 |
Non-RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N5417US | Microsemi |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n5416us-datasheets-6131.pdf | E-MELF | 2 | 7 Weeks | 2 | IN PRODUCTION (Last Updated: 3 weeks ago) | no | HIGH RELIABILITY, METALLURGICALLY BONDED | Yes | 8541.10.00.80 | e0 | TIN LEAD | END | WRAP AROUND | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | 1.5V | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1μA | 200V | 80A | 150 ns | Standard | 200V | 3A | 1 | 3A | 1μA @ 200V | 1.5V @ 9A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GRP-B-DATA-JANTX1N5420 | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Bag | RoHS non-compliant | /files/microsemi-grpbdatajantx1n5420-datasheets-7765.pdf | 3.42(Max) | 2 | Single | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT60D40BG | Microsemi |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | RoHS Compliant | 1997 | /files/microsemicorporation-apt60d40bg-datasheets-2397.pdf | 400V | 60A | TO-247-2 | 21.46mm | 5.31mm | 16.26mm | Lead Free | 2 | 25 Weeks | 6.500007g | IN PRODUCTION (Last Updated: 1 month ago) | Tin | No | 8541.10.00.80 | e1 | Single | 1 | R-PSFM-T2 | 60A | 60A | 1.3V | 600A | CATHODE | ULTRA FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 250μA | 400V | 600A | 37 ns | 30 ns | Standard | 400V | 60A | 1 | 400V | 250μA @ 400V | 1.5V @ 60A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GRP-A-DATA-JANS1N5614US | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Waffle | RoHS non-compliant | /files/microsemi-grpbdatajans1n5616us-datasheets-2028.pdf | 2 | Single | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JAN1N4153-1 | Microsemi |
Min: 1 Mult: 1 |
download | Military, MIL-PRF-19500/337 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | /files/microsemicorporation-1n41531-datasheets-2201.pdf | DO-204AH, DO-35, Axial | 2 | 8 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | METALLURGICALLY BONDED | No | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/337 | WIRE | Single | 1 | Qualified | 150mA | 880mV | ISOLATED | Small Signal =< 200mA (Io), Any Speed | SILICON | 75V | 2A | 4 ns | Standard | 2pF @ 0V 1MHz | 50nA @ 50V | 880mV @ 20mA | 150mA DC | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GRP-A-DATA-JANTX1N5806 | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Bag | RoHS non-compliant | /files/microsemi-grpbdatajantx1n5802-datasheets-7299.pdf | 2.16(Max) | 2 | Single | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N5620 | Microsemi |
Min: 1 Mult: 1 |
download | Military, MIL-PRF-19500/427 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 200°C | -65°C | AVALANCHE | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n5616-datasheets-7752.pdf | A, Axial | Contains Lead | 2 | 12 Weeks | 2 | IN PRODUCTION (Last Updated: 3 weeks ago) | no | EAR99 | HIGH RELIABILITY | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500 | WIRE | 2 | Single | 1 | Qualified | 1.3V | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 500nA | 800V | 30A | 2 μs | Standard | 800V | 1A | 1A | 500nA @ 800V | 1.3V @ 3A | -65°C~200°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ZL70250UEJ2 | Microsemi |
Min: 1 Mult: 1 |
download | Tray | RoHS non-compliant | /files/microsemi-zl70250uej2-datasheets-4363.pdf | 36 | GFSK | Transceiver | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JAN1N5806US | Microsemi |
Min: 1 Mult: 1 |
download | Military, MIL-PRF-19500/477 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n5804us-datasheets-2472.pdf | SQ-MELF, A | 2 | 8 Weeks | 2 | IN PRODUCTION (Last Updated: 3 weeks ago) | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) - with Nickel (Ni) barrier | MIL-19500/477F | END | WRAP AROUND | Single | 1 | Qualified | 975mV | ISOLATED | ULTRA FAST RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1μA | 150V | 35A | 25 ns | Standard | 150V | 2.5A | 1 | 25pF @ 10V 1MHz | 1μA @ 150V | 975mV @ 2.5A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GRP-ABC-JANTX1N3595-1 | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Bag | RoHS non-compliant | /files/microsemi-grpabcjantx1n35951-datasheets-5478.pdf | 2.29(Max) | 2 | Single | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT75DQ100BG | Microsemi |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | RoHS Compliant | 1997 | /files/microsemicorporation-apt75dq100bg-datasheets-6679.pdf | 1kV | 75A | TO-247-2 | Lead Free | 2 | 25 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | yes | No | 8541.10.00.80 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 1 | Rectifier Diodes | R-PSFM-T2 | 75A | 75A | 3V | CATHODE | ULTRA FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 1kV | 540A | 250 ns | Standard | 1kV | 75A | 1 | 1000V | 100μA @ 1000V | 3V @ 75A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GRP-A-DATA-JANS1N5615US | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Waffle | RoHS non-compliant | /files/microsemi-jantx1n5615ustr-datasheets-9139.pdf | 2 | Single | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N5415 | Microsemi |
Min: 1 Mult: 1 |
download | Military, MIL-PRF-19500/411 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | AVALANCHE | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n5420-datasheets-7853.pdf | B, Axial | Contains Lead | 2 | 12 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/411L | WIRE | 2 | Single | 1 | Qualified | 1.5V | ISOLATED | FAST RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1μA | 50V | 80A | 150 ns | Standard | 50V | 3A | 1 | 3A | 1μA @ 50V | 1.5V @ 9A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GRP-A-DATA-JANTX1N5621 | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Bag | RoHS non-compliant | /files/microsemi-grpabcjantx1n5615-datasheets-6015.pdf | 2.16(Max) | 2 | Single | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N5619US | Microsemi |
Min: 1 Mult: 1 |
download | Military, MIL-PRF-19500/429 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n5617us-datasheets-4650.pdf | SQ-MELF, A | Contains Lead | 2 | 12 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | EAR99 | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | END | WRAP AROUND | 2 | Single | 1 | Qualified | 1.6V | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500nA | 600V | 30A | 250 ns | Standard | 1A | 25pF @ 12V 1MHz | 500nA @ 600V | 1.6V @ 3A | 1A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTXV1N6306 | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Tray | RoHS non-compliant | /files/microsemi-jantxv1n6306-datasheets-1992.pdf | 2 | Single | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N6620US | Microsemi |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | AVALANCHE | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n6622us-datasheets-9253.pdf | SQ-MELF, A | 2 | 17 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | HIGH RELIABILITY | Lead, Tin | not_compliant | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | END | WRAP AROUND | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Not Qualified | 1.2A | 1.6V | ISOLATED | ULTRA FAST RECOVERY | 13 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 220V | 20A | 0.5μA | 30 ns | Standard | 220V | 1.2A | 1 | 10pF @ 10V 1MHz | 500nA @ 220V | 1.4V @ 1.2A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| GRP-DATA-JANTXV1N5806US | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Bag | RoHS non-compliant | /files/microsemi-grpadatajantx1n5802us-datasheets-6897.pdf | 2 | Single | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N5551US | Microsemi |
Min: 1 Mult: 1 |
download | Military, MIL-PRF-19500/420 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | AVALANCHE | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n5554us-datasheets-4685.pdf | SQ-MELF, B | 2 | 12 Weeks | 2 | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | END | WRAP AROUND | 235 | Single | 20 | 1 | Qualified | 5A | 1.2V | ISOLATED | POWER | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1μA | 400V | 100A | 2 μs | Standard | 1 | 3A | 1μA @ 400V | 1.2V @ 9A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JAN1N6761-1 | Microsemi |
Min: 1 Mult: 1 |
download | Schottky Diode | Bag | RoHS non-compliant | /files/microsemi-grpabcjan1n58191-datasheets-3027.pdf | 2.72(Max) | 2 | Single | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N5417US | Microsemi |
Min: 1 Mult: 1 |
download | Military, MIL-PRF-19500/411 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n5416us-datasheets-6131.pdf | SQ-MELF, B | Contains Lead | 2 | 12 Weeks | 2 | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/411L | END | WRAP AROUND | 235 | 2 | Single | 20 | 1 | Qualified | 1.5V | ISOLATED | FAST RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1μA | 200V | 80A | 150 ns | Standard | 200V | 3A | 1 | 3A | 1μA @ 200V | 1.5V @ 9A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANS DATA-JANS1N5811US | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Waffle | RoHS non-compliant | /files/microsemi-1n5811aus-datasheets-6164.pdf | 2 | Single | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N6536 | Microsemi |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n6536-datasheets-7973.pdf | A, Axial | 2 | 7 Weeks | no | EAR99 | Lead, Tin | 8541.10.00.80 | e0 | TIN LEAD | WIRE | NOT SPECIFIED | NOT SPECIFIED | Not Qualified | O-LALF-W2 | 1A | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 400V | 30 ns | Standard | 400V | 1A | 1A | 10μA @ 400V | 1.5V @ 1A | 1A DC |
