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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Type | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Diameter | Package / Case | Lead Free | Number of Terminations | Factory Lead Time | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Forward Current | Forward Voltage | Turn On Delay Time | Turn-Off Delay Time | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Application | Natural Thermal Resistance | Speed | Power - Max | Diode Element Material | Power Dissipation-Max | Rep Pk Reverse Voltage-Max | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Current-Max | JEDEC-95 Code | Forward Voltage-Max | Reverse Recovery Time | Diode Type | Max Reverse Voltage (DC) | Collector Emitter Breakdown Voltage | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Turn On Time | Output Current-Max | Collector Emitter Voltage (VCEO) | Max Collector Current | Reverse Recovery Time-Max | Capacitance @ Vr, F | Input | Voltage - DC Reverse (Vr) (Max) | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Turn Off Time-Nom (toff) | VCEsat-Max | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Gate-Emitter Voltage-Max | Current - Average Rectified (Io) | Operating Temperature - Junction | Current - Collector Cutoff (Max) | Vce(on) (Max) @ Vge, Ic | IGBT Type | NTC Thermistor | Input Capacitance (Cies) @ Vce |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| FST6440 | Microsemi |
Min: 1 Mult: 1 |
download | Schottky Diode | RoHS Compliant | /files/microsemi-fst6440-datasheets-4673.pdf | 4 | Dual Common Cathode | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JAN1N3613 | Microsemi |
Min: 1 Mult: 1 |
download | Military, MIL-PRF-19500/228 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -55°C | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n3611-datasheets-7844.pdf | A, Axial | 2 | 8 Weeks | 2 | IN PRODUCTION (Last Updated: 2 weeks ago) | no | EAR99 | HIGH RELIABILITY | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500 | WIRE | 2 | Single | 1 | Qualified | 1.1V | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1μA | 600V | 30A | DO-41 | Standard | 600V | 1A | 1A | 100μA @ 300V | 1.1V @ 1A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GRP-A-DATA-JANTX1N6639US | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | RoHS non-compliant | /files/microsemi-grpdatajans1n6640us-datasheets-7832.pdf | 2 | Single | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N6643 | Microsemi |
Min: 1 Mult: 1 |
download | Military, MIL-PRF-19500/578 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | /files/microsemicorporation-jans1n6642-datasheets-6195.pdf | Axial | 2 | 8 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | METALLURGICALLY BONDED | No | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/578E | WIRE | 2 | Single | 1 | Qualified | 1.2V | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 0.75W | 50V | 500nA | 75V | 2.5A | DO-35 | 6 ns | Standard | 0.3A | 5pF @ 0V 1MHz | 125V | 50nA @ 20V | 1.2V @ 100mA | 300mA | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| GRP-ABC-JAN1N4150UR-1 | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Bag | RoHS non-compliant | /files/microsemi-1n4150ur1jantxv-datasheets-9164.pdf | 1.7(Max) | 2 | Single | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JAN1N5711UR-1 | Microsemi |
Min: 1 Mult: 1 |
download | Military, MIL-PRF-19500/444 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | Non-RoHS Compliant | /files/microsemicorporation-jantx1n5711ur1-datasheets-6369.pdf | DO-213AA | 2 | 11 Weeks | 2 | IN PRODUCTION (Last Updated: 3 weeks ago) | no | EAR99 | METALLURGICALLY BONDED | No | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/444 | END | WRAP AROUND | 2 | Single | 1 | Qualified | 33mA | 1V | ISOLATED | Small Signal =< 200mA (Io), Any Speed | SILICON | 70V | Schottky | 0.033A | 2pF @ 0V 1MHz | 200nA @ 50V | 1V @ 15mA | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANS DATA-JANS1N3595US | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Waffle | RoHS non-compliant | /files/microsemi-jansdatajans1n3595us-datasheets-4185.pdf | 2 | Single | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| UES806 | Microsemi |
Min: 1 Mult: 1 |
download | Stud | Not Applicable | 150°C | -55°C | Non-RoHS Compliant | 1997 | /files/microsemicorporation-ues805-datasheets-0550.pdf | 1 | 8 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | No | 8541.10.00.80 | e0 | TIN LEAD | UPPER | SOLDER LUG | 2 | Single | 1 | Rectifier Diodes | O-MUPM-D1 | 50A | 1.25V | CATHODE | EFFICIENCY | SILICON | 70μA | 400V | 600A | 50 ns | RECTIFIER DIODE | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ID102 | Microsemi |
Min: 1 Mult: 1 |
RoHS non-compliant | /files/microsemi-id102-datasheets-9855.pdf | 5.84(Max) | 3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N6621US | Microsemi |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | AVALANCHE | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n6622us-datasheets-9253.pdf | SQ-MELF, A | Contains Lead | 2 | 17 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | HIGH RELIABILITY | Lead, Tin | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500 | END | WRAP AROUND | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Qualified | 1.2A | 1.6V | ISOLATED | ULTRA FAST RECOVERY | 13 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 440V | 20A | 0.5μA | 30 ns | Standard | 440V | 1.2A | 1 | 10pF @ 10V 1MHz | 500nA @ 440V | 1.4V @ 1.2A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||
| S4380TS | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Tray | RoHS non-compliant | /files/microsemi-s43100ts-datasheets-5381.pdf | 2 | Single | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N1124A | Microsemi |
Min: 1 Mult: 1 |
download | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n1124a-datasheets-5647.pdf | 1 | 20 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | no | 8541.10.00.80 | e0 | TIN LEAD | MIL-19500/260G | NO | UPPER | SOLDER LUG | NOT SPECIFIED | 1 | 200°C | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | O-MUPM-D1 | SINGLE | CATHODE | POWER | SILICON | 200V | DO-203AA | 1.2V | RECTIFIER DIODE | 25A | 1 | 3.3A | 0.5μs | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GRP-B-DATA-JANTX1N5619 | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Bag | RoHS non-compliant | /files/microsemi-grpabcjantx1n5615-datasheets-6015.pdf | 2.16(Max) | 2 | Single | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N648-1 | Microsemi |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n6481-datasheets-9193.pdf | DO-204AH, DO-35, Axial | 2 | 8 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | METALLURGICALLY BONDED | Lead, Tin | 8541.10.00.70 | e0 | TIN LEAD | WIRE | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Not Qualified | 400mA | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 0.5W | 500V | Standard | 500V | 400mA | 0.4A | 50nA @ 500V | 1V @ 400mA | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT75DQ120SG | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Tube | RoHS Compliant | /files/microsemi-apt75dq120sg-datasheets-2849.pdf | 3 | Single | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N5814R | Microsemi |
Min: 1 Mult: 1 |
download | MILITARY, MIL-PRF-19500/478 | Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | /files/microsemi-jantx1n5814r-datasheets-2820.pdf | DO-203AA, DO-4, Stud | 1 | 2 | IN PRODUCTION (Last Updated: 3 weeks ago) | no | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/478 | UPPER | SOLDER LUG | 1 | Single | 1 | Qualified | O-MUPM-D1 | 20A | 950mV | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 100V | 400A | 35 ns | Standard | 1 | 300pF @ 10V 1MHz | 10μA @ 100V | 950mV @ 20A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GRP-A-DATA-JANTX1N6630 | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Bag | RoHS non-compliant | /files/microsemi-grpabcjantx1n6631-datasheets-0043.pdf | 3.42(Max) | 2 | Single | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGF50VDA60T3G | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Through Hole | Chassis Mount | 1 (Unlimited) | 150°C | -40°C | RoHS Compliant | 2012 | /files/microsemicorporation-aptgf50vda60t3g-datasheets-2161.pdf | SP3 | 20 | 20 | EAR99 | 250W | UPPER | UNSPECIFIED | NOT SPECIFIED | 25 | Dual | NOT SPECIFIED | 2 | Insulated Gate BIP Transistors | Not Qualified | 2.2nF | Dual Boost Chopper | ISOLATED | POWER CONTROL | N-CHANNEL | 600V | 52 ns | 600V | 65A | Standard | 151 ns | 2.45 V | 250μA | 2.45V @ 15V, 50A | NPT | Yes | 2.2nF @ 25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GRP-A-DATA-JANTX1N6631US | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Bag | RoHS non-compliant | /files/microsemi-grpadatajantx1n6631us-datasheets-8612.pdf | 2 | Single | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGT50A1202G | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | RoHS Compliant | 2012 | SP2 | 22 Weeks | 18 | EAR99 | 277W | Dual | 3.6nF | Half Bridge | 277W | 1.2kV | 1.2kV | 75A | Standard | 1200V | 50μA | 2.1V @ 15V, 50A | Trench Field Stop | No | 3.6nF @ 25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SBR6045R | Microsemi |
Min: 1 Mult: 1 |
Schottky Diode | RoHS non-compliant | /files/microsemi-sbr6045r-datasheets-5711.pdf | 2 | Single | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGF50DA120CT1G | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | 1 (Unlimited) | 150°C | -40°C | RoHS Compliant | 1997 | SP1 | 7 | 10 | EAR99 | 312W | UPPER | UNSPECIFIED | 12 | 1 | Insulated Gate BIP Transistors | Not Qualified | R-XUFM-X7 | 3.45nF | Single | ISOLATED | POWER CONTROL | N-CHANNEL | 1.2kV | 100 ns | 1.2kV | 75A | Standard | 1200V | 400 ns | 3.7 V | 20V | 250μA | 3.7V @ 15V, 50A | NPT | Yes | 3.45nF @ 25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GRP-A-DATA-JANTX1N5550US | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Bag | RoHS non-compliant | /files/microsemi-grpadatajan1n5553us-datasheets-2223.pdf | 2 | Single | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT50GLQ65JU2 | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount | -55°C~175°C TJ | 1 (Unlimited) | 2012 | /files/microsemicorporation-apt50glq65ju2-datasheets-2847.pdf | SOT-227-4, miniBLOC | ISOTOP® | Boost Chopper | 220W | Standard | 650V | 80A | 50μA | 2.3V @ 15V, 50A | Trench Field Stop | No | 3.1nF @ 25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DATA1N5619USJANS | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Waffle | RoHS non-compliant | /files/microsemi-jantx1n5615ustr-datasheets-9139.pdf | 2 | Single | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGT300DA170G | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | RoHS Compliant | 2012 | /files/microsemicorporation-aptgt300da170g-datasheets-3936.pdf | SP6 | 5 | 36 Weeks | 5 | yes | EAR99 | AVALANCHE RATED | e1 | TIN SILVER COPPER | 1.66kW | UPPER | UNSPECIFIED | 5 | 1 | 26.5nF | SILICON | Single | ISOLATED | POWER CONTROL | N-CHANNEL | 1660W | 1.7kV | 450 ns | 1.7kV | 400A | Standard | 1700V | 1100 ns | 750μA | 2.4V @ 15V, 300A | Trench Field Stop | No | 26.5nF @ 25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| KV2131-00 | Microsemi |
Min: 1 Mult: 1 |
download | VCO | RoHS Compliant | /files/microsemi-kv213100-datasheets-4275.pdf | 2 | Single | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGT200A170D3G | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | RoHS Compliant | /files/microsemicorporation-aptgt200a170d3g-datasheets-4022.pdf | D-3 Module | 11 | 36 Weeks | 7 | yes | EAR99 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 1.25kW | UPPER | UNSPECIFIED | 11 | Dual | 2 | R-XUFM-X11 | 17nF | SILICON | Half Bridge | ISOLATED | POWER CONTROL | N-CHANNEL | 1250W | 1.7kV | 400 ns | 2.4V | 400A | Standard | 1700V | 1200 ns | 5mA | 2.4V @ 15V, 200A | Trench Field Stop | No | 17nF @ 25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| USD640 | Microsemi |
Min: 1 Mult: 1 |
download | Schottky Diode | RoHS Compliant | /files/microsemi-usd640-datasheets-5382.pdf | 2 | Single | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGL475A120D3G | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~175°C TJ | 1 (Unlimited) | RoHS Compliant | 2012 | /files/microsemicorporation-aptgl475a120d3g-datasheets-4137.pdf | D-3 Module | Lead Free | 7 | 36 Weeks | 7 | EAR99 | 2.08kW | UPPER | UNSPECIFIED | 11 | Dual | 2 | Insulated Gate BIP Transistors | 24.6nF | 200 ns | 400 ns | SILICON | Half Bridge | ISOLATED | MOTOR CONTROL | N-CHANNEL | 2080W | 1.2kV | 270 ns | 1.2kV | 610A | Standard | 1200V | 580 ns | 2.2 V | 20V | 5mA | 2.2V @ 15V, 400A | Trench Field Stop | No | 24.6nF @ 25V |
