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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Type | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Diameter | Package / Case | Lead Free | Number of Terminations | Factory Lead Time | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | HTS Code | JESD-609 Code | Terminal Finish | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Forward Voltage | Turn On Delay Time | Turn-Off Delay Time | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Product Category | Speed | Power - Max | Diode Element Material | Peak Non-Repetitive Surge Current | Reverse Current-Max | Reverse Recovery Time | Diode Type | Max Reverse Voltage (DC) | Collector Emitter Breakdown Voltage | Average Rectified Current | Number of Phases | Turn On Time | Output Current-Max | Collector Emitter Voltage (VCEO) | Max Collector Current | Organization | Self Refresh | Input | PLL | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Turn Off Time-Nom (toff) | VCEsat-Max | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Gate-Emitter Voltage-Max | Operating Temperature - Junction | Current - Collector Cutoff (Max) | Vce(on) (Max) @ Vge, Ic | IGBT Type | NTC Thermistor | Input Capacitance (Cies) @ Vce |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GRP-ABC-JANTX1N6631 | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Bag | RoHS non-compliant | /files/microsemi-grpabcjantx1n6631-datasheets-0043.pdf | 3.42(Max) | 2 | Single | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N5419E3 | Microsemi |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | AVALANCHE | RoHS Compliant | 1997 | /files/microsemicorporation-1n5420-datasheets-7853.pdf | B, Axial | 2 | 7 Weeks | 2 | IN PRODUCTION (Last Updated: 3 weeks ago) | EAR99 | HIGH RELIABILITY | 8541.10.00.80 | e3 | MATTE TIN | WIRE | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | 1.5V | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 80A | 1μA | 250 ns | Standard | 500V | 3A | 1 | 3A | 1μA @ 500V | 1.5V @ 9A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||
| GRP-B-DATA-JANS1N5550US | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Waffle | RoHS non-compliant | /files/microsemi-grpadatajan1n5553us-datasheets-2223.pdf | 2 | Single | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTCV60TLM99T3G | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~175°C TJ | 1 (Unlimited) | RoHS Compliant | 2012 | /files/microsemicorporation-aptcv60tlm99t3g-datasheets-2214.pdf | SP3 | 32 | 3 | IN PRODUCTION (Last Updated: 1 month ago) | AVALANCHE ENERGY RATED, ULTRA LOW-ON RESISTANCE | No | 90W | DUAL | UNSPECIFIED | 32 | 2 | Insulated Gate BIP Transistors | 1.6nF | SILICON | Three Level Inverter - IGBT, FET | ISOLATED | POWER CONTROL | N-CHANNEL | 90W | 600V | 170 ns | 1.9V | 50A | Standard | 310 ns | 20V | 250μA | 1.9V @ 15V, 30A | Trench Field Stop | Yes | 1.6nF @ 25V | |||||||||||||||||||||||||||||||||||||||||||||||
| APT30D20S | Microsemi |
Min: 1 Mult: 1 |
Switching Diode | RoHS non-compliant | /files/microsemi-apt30d20s-datasheets-5819.pdf | 3 | Single | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGT100A1202G | Microsemi |
Min: 1 Mult: 1 |
download | Screw, Through Hole | Through Hole | -40°C~150°C TJ | 1 (Unlimited) | RoHS Compliant | 2012 | SP2 | 22 Weeks | 18 | EAR99 | 480W | Dual | 7.2nF | Half Bridge | 480W | 1.2kV | 1.2kV | 140A | Standard | 1200V | 50μA | 2.1V @ 15V, 100A | Trench Field Stop | No | 7.2nF @ 25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N5619US/TR | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Tape and Reel | RoHS non-compliant | /files/microsemi-jantx1n5615ustr-datasheets-9139.pdf | 2 | Single | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT50GF60JCU2 | Microsemi |
Min: 1 Mult: 1 |
download | Chassis, Screw, Stud | Chassis, Stud Mount | -55°C~150°C TJ | 1 (Unlimited) | RoHS Compliant | 1997 | SOT-227-4, miniBLOC | 4 | 4 | EAR99 | 277W | UPPER | UNSPECIFIED | 4 | 1 | Insulated Gate BIP Transistors | 2.2nF | SILICON | Single | ISOLATED | POWER CONTROL | N-CHANNEL | 277W | 600V | 52 ns | 600V | 70A | Standard | 151 ns | 20V | 250μA | 2.45V @ 15V, 50A | NPT | No | 2.2nF @ 25V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SPB10035 | Microsemi |
Min: 1 Mult: 1 |
download | Schottky Diode | RoHS Compliant | /files/microsemi-spb10035-datasheets-4346.pdf | 4 | Dual Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGL475U120DAG | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~175°C TJ | 1 (Unlimited) | RoHS Compliant | 1999 | /files/microsemicorporation-aptgl475u120dag-datasheets-3867.pdf | SP6 | 36 Weeks | 5 | EAR99 | 2.307kW | 1 | Insulated Gate BIP Transistors | 24.6nF | Single | 2307W | 1.2kV | 1.2kV | 610A | Standard | 1200V | 2.2 V | 20V | 4mA | 2.2V @ 15V, 400A | Trench Field Stop | No | 24.6nF @ 25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| UES1106SM | Microsemi |
Min: 1 Mult: 1 |
Switching Diode | RoHS non-compliant | /files/microsemi-ues1106sm-datasheets-9932.pdf | 2 | Single | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGL120TDU120TPG | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~175°C TJ | 1 (Unlimited) | RoHS Compliant | 2012 | /files/microsemicorporation-aptgl120tdu120tpg-datasheets-3982.pdf | Module | 23 | 36 Weeks | 23 | IN PRODUCTION (Last Updated: 3 weeks ago) | EAR99 | 517W | UPPER | UNSPECIFIED | 23 | 6 | Insulated Gate BIP Transistors | Not Qualified | 6.2nF | SILICON | Triple, Dual - Common Source | ISOLATED | POWER CONTROL | N-CHANNEL | 517W | 1.2kV | 185 ns | 1.2kV | 140A | Standard | 1200V | 430 ns | 2.15 V | 20V | 250μA | 2.15V @ 15V, 100A | Trench Field Stop | Yes | 6.2nF @ 25V | ||||||||||||||||||||||||||||||||||||||||||||
| UFR3015R | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Tray | RoHS non-compliant | /files/microsemi-ufr3250-datasheets-8739.pdf | 2 | Single | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGLQ600A65T6G | Microsemi |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~175°C TJ | 1 (Unlimited) | RoHS Compliant | /files/microsemicorporation-aptglq600a65t6g-datasheets-4072.pdf | SP6 | Lead Free | 36 Weeks | 6 | EAR99 | 2kW | Dual | 36.6nF | 19 ns | 197 ns | Half Bridge | 2000W | 650V | 2.4V | 1.2kA | Standard | 1200A | 600μA | 2.4V @ 15V, 600A | Trench Field Stop | Yes | 36.6nF @ 25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GRP-A-DATA-JANTX1N6621U | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Bag | RoHS non-compliant | /files/microsemi-grpbdatajantx1n6622-datasheets-4586.pdf | 2 | Single | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGLQ200H120G | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount | Chassis Mount | -40°C~175°C TJ | 1 (Unlimited) | RoHS Compliant | 2012 | /files/microsemicorporation-aptglq200h120g-datasheets-4210.pdf | SP6 | Lead Free | 36 Weeks | 6 | 1kW | 1 | Insulated Gate BIP Transistors | 12.3nF | 30 ns | 290 ns | Full Bridge | 1000W | 1.2kV | 2.4V | 350A | Standard | 1200V | 20V | 100μA | 2.4V @ 15V, 200A | Trench Field Stop | No | 12.3nF @ 25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N5622JANTXV | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Bag | RoHS non-compliant | /files/microsemi-grpbdatajan1n5614-datasheets-8553.pdf | 2.16(Max) | 2 | Single | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGT30A170T1G | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | RoHS Compliant | 2012 | /files/microsemicorporation-aptgt30a170t1g-datasheets-4773.pdf | SP1 | 12 | 36 Weeks | 1 | yes | EAR99 | e1 | TIN SILVER COPPER | 210W | UPPER | THROUGH-HOLE | NOT SPECIFIED | 12 | Dual | NOT SPECIFIED | 2 | Insulated Gate BIP Transistors | Not Qualified | 2.5nF | SILICON | Half Bridge | ISOLATED | MOTOR CONTROL | N-CHANNEL | 210W | 1.7kV | 170 ns | 2.4V | 45A | Standard | 1700V | 850 ns | 20V | 250μA | 2.4V @ 15V, 30A | Trench Field Stop | Yes | 2.5nF @ 25V | ||||||||||||||||||||||||||||||||||||||||
| GRP-B-DATA-JANS1N5811 | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Tray | RoHS non-compliant | /files/microsemi-grpadatajan1n5811-datasheets-3001.pdf | 3.42(Max) | 2 | Single | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGT150A60T1G | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~175°C TJ | 1 (Unlimited) | RoHS Compliant | 2007 | /files/microsemicorporation-aptgt150a60t1g-datasheets-4858.pdf | SP1 | 12 | 36 Weeks | 12 | yes | EAR99 | e1 | TIN SILVER COPPER | 480W | UPPER | UNSPECIFIED | NOT SPECIFIED | 12 | Dual | NOT SPECIFIED | 2 | Insulated Gate BIP Transistors | Not Qualified | 9.2nF | SILICON | Half Bridge | ISOLATED | MOTOR CONTROL | N-CHANNEL | 480W | 600V | 180 ns | 600V | 225A | Standard | 370 ns | 1.9 V | 20V | 250μA | 1.9V @ 15V, 150A | Trench Field Stop | Yes | 9.2nF @ 25V | ||||||||||||||||||||||||||||||||||||||||
| UES1103E3 | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | RoHS non-compliant | /files/microsemi-ues1103tr-datasheets-2315.pdf | 2.16(Max) | 2 | Single | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGLQ40H120T1G | Microsemi |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~175°C TJ | 1 (Unlimited) | RoHS Compliant | 2012 | /files/microsemicorporation-aptglq40h120t1g-datasheets-4924.pdf | SP1 | Lead Free | 36 Weeks | 1 | 250W | 1 | Insulated Gate BIP Transistors | 2.3nF | 30 ns | 290 ns | Full Bridge | 250W | 1.2kV | 2.4V | 75A | Standard | 1200V | 20V | 100μA | 2.4V @ 15V, 40A | Trench Field Stop | Yes | 2.3nF @ 25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| W3H128M72E2-400NBI | Microsemi |
Min: 1 Mult: 1 |
Supplier Unconfirmed | /files/microsemi-w3h128m72e2400nbi-datasheets-4878.pdf | 208 | DDR2 SDRAM | 128Mx72 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGTQ200DA65T3G | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount | -40°C~175°C TJ | RoHS Compliant | 2012 | /files/microsemicorporation-aptgtq200da65t3g-datasheets-4993.pdf | Module | 36 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Boost Chopper | 483W | Standard | 650V | 200A | 200μA | 2.2V @ 15V, 200A | Yes | 12nF @ 25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GRP-ABC-JAN1N5616US | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Bag | RoHS non-compliant | /files/microsemi-grpbdatajans1n5616us-datasheets-2028.pdf | 2 | Single | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGT30H170T3G | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | RoHS Compliant | 2006 | /files/microsemicorporation-aptgt30h170t3g-datasheets-5072.pdf | SP3 | 25 | 36 Weeks | 32 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 210W | UPPER | UNSPECIFIED | 25 | 4 | R-XUFM-X25 | 2.5nF | SILICON | Full Bridge Inverter | ISOLATED | POWER CONTROL | N-CHANNEL | 210W | 1.7kV | 170 ns | 1.7kV | 45A | Standard | 1700V | 850 ns | 250μA | 2.4V @ 15V, 30A | Trench Field Stop | Yes | 2.5nF @ 25V | |||||||||||||||||||||||||||||||||||||||||||
| ZL70102LDG1 | Microsemi |
Min: 1 Mult: 1 |
Tray | RoHS Compliant | /files/microsemi-zl70102ldg1-datasheets-9471.pdf | 48 | Transceiver | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGLQ100A120TG | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount | -40°C~175°C TJ | RoHS Compliant | 2011 | /files/microsemicorporation-aptglq100a120tg-datasheets-5186.pdf | Module | 36 Weeks | SP4 | Half Bridge | 520W | Standard | 1200V | 170A | 50μA | 2.42V @ 15V, 100A | Trench Field Stop | Yes | 6.15nF @ 25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N5615/TR | Microsemi |
Min: 1 Mult: 1 |
Switching Diode | Tape and Reel | RoHS non-compliant | /files/microsemi-grpabcjantx1n5615-datasheets-6015.pdf | 2.16(Max) | 2 | Single | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGT200SK120G | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | RoHS Compliant | /files/microsemicorporation-aptgt200sk120g-datasheets-5284.pdf | SP6 | 5 | 36 Weeks | 5 | yes | EAR99 | AVALANCHE RATED | e1 | TIN SILVER COPPER | 890W | UPPER | UNSPECIFIED | 5 | 1 | 14nF | SILICON | Single | ISOLATED | POWER CONTROL | N-CHANNEL | 890W | 1.2kV | 340 ns | 1.2kV | 280A | Standard | 1200V | 610 ns | 350μA | 2.1V @ 15V, 200A | Trench Field Stop | No | 14nF @ 25V |
