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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Type | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Diameter | Package / Case | Capacitance | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | Max Input Voltage | JESD-609 Code | Terminal Finish | Polarity | Reference Standard | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Element Configuration | Accuracy | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Max Output Current | Output Current | Forward Current | Forward Voltage | Output Type | Max Surge Current | Configuration | Case Connection | Application | Number of Outputs | Quiescent Current | Natural Thermal Resistance | Speed | Diode Element Material | Power Dissipation-Max | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Current-Max | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Number of Phases | Output Current-Max | Reverse Voltage (DC) | Voltage - Output | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Operating Temperature - Junction |
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| APT30D60BG | Microsemi |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | RoHS Compliant | 1997 | /files/microsemicorporation-aptrg8a120g-datasheets-4026.pdf | 600V | 30A | TO-247-2 | 21.46mm | 5.31mm | 16.26mm | Lead Free | 2 | 25 Weeks | 6.500007g | IN PRODUCTION (Last Updated: 1 month ago) | yes | Tin | No | 8541.10.00.80 | e1 | 3 | Single | 1 | Rectifier Diodes | R-PSFM-T2 | 30A | 30A | 1.6V | 320A | CATHODE | ULTRA FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 250μA | 600V | 320A | 85 ns | 23 ns | Standard | 600V | 30A | 1 | 600V | 250μA @ 600V | 1.8V @ 30A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||
| 5962-8778201XA | Microsemi |
Min: 1 Mult: 1 |
Through Hole | 125°C | -55°C | RoHS Compliant | 35V | Positive | 1.5 % | 2A | Fixed | 1 | 6mA | 5V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N5616US | Microsemi |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 200°C | -65°C | AVALANCHE | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n5618us-datasheets-0738.pdf | SQ-MELF, A | 2 | 7 Weeks | 2 | IN PRODUCTION (Last Updated: 2 weeks ago) | no | EAR99 | HIGH RELIABILITY | Lead, Tin | Yes | 8541.10.00.80 | e0 | TIN LEAD | END | WRAP AROUND | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Not Qualified | 1.3V | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 500nA | 400V | 30A | 2 μs | Standard | 400V | 1A | 1A | 500nA @ 400V | 1.3V @ 3A | -65°C~200°C | |||||||||||||||||||||||||||||||||||||||||||
| M55310/16-B41A-32M000 | Microsemi |
Min: 1 Mult: 1 |
Non-RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| UES1002 | Microsemi |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Bulk | Not Applicable | 175°C | -55°C | Non-RoHS Compliant | 1996 | /files/microsemicorporation-ues1002-datasheets-6712.pdf | A, Axial | 2 | 8 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | EAR99 | No | 8541.10.00.80 | e0 | TIN LEAD | END | WRAP AROUND | Single | 1 | 1A | 975mV | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 2μA | 100V | 30A | 25 ns | Standard | 100V | 1A | 1A | 2μA @ 100V | 975mV @ 1A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||
| VCC1-A2C-6M000 | Microsemi |
Min: 1 Mult: 1 |
Non-RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT30D20BG | Microsemi |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | RoHS Compliant | /files/microsemicorporation-apt30d20bg-datasheets-5018.pdf | 200V | 30A | TO-247-2 | Lead Free | 2 | 25 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | yes | No | 8541.10.00.80 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 1 | 30A | 30A | 1.3V | CATHODE | ULTRA FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 250μA | 200V | 320A | 24 ns | Standard | 200V | 30A | 1 | 250μA @ 200V | 1.3V @ 30A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||
| FST15135 | Microsemi |
Min: 1 Mult: 1 |
download | Schottky Diode | RoHS Compliant | /files/microsemi-fst15135-datasheets-8697.pdf | 10 | Dual Common Cathode | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| LSM315JE3/TR13 | Microsemi |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 1997 | /files/microsemicorporation-lsm315ge3tr13-datasheets-3821.pdf | DO-214AB, SMC | 24 Weeks | 2 | yes | No | LSM315 | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 15V | 3A | 15V | 2mA @ 15V | 320mV @ 3A | -55°C~125°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GRP-A-DATA-JANTX1N5802US | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Bag | RoHS non-compliant | /files/microsemi-grpadatajantx1n5802us-datasheets-6897.pdf | 2 | Single | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JAN1N4248 | Microsemi |
Min: 1 Mult: 1 |
download | Military, MIL-PRF-19500/286 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -55°C | Non-RoHS Compliant | 1997 | /files/microsemicorporation-jantx1n4248-datasheets-8351.pdf | A, Axial | 2 | 8 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | HIGH RELIABILITY | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500 | WIRE | 2 | Single | 1 | Qualified | 1.3V | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1μA | 800V | 25A | 5 μs | Standard | 800V | 1A | 1A | 1μA @ 800V | 1.3V @ 3A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||
| R50420TS | Microsemi |
Min: 1 Mult: 1 |
Switching Diode | Supplier Unconfirmed | /files/microsemi-r504120-datasheets-5608.pdf | 2 | Single | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CDLL5817 | Microsemi |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 125°C | -55°C | Non-RoHS Compliant | 1997 | /files/microsemicorporation-cdll5817-datasheets-6079.pdf | DO-213AB, MELF | 2 | 10 Weeks | 2 | no | EAR99 | METALLURGICALLY BONDED | No | 8541.10.00.80 | e0 | TIN LEAD | END | WRAP AROUND | 2 | Single | 1 | 1A | 900mV | ISOLATED | 40 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 20V | Schottky | 20V | 1A | 1A | 100μA @ 20V | 600mV @ 1A | -55°C~125°C | |||||||||||||||||||||||||||||||||||||||||||||||||
| GRP-ABC-JANTX1N5615 | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Bag | RoHS non-compliant | /files/microsemi-grpabcjantx1n5615-datasheets-6015.pdf | 2.16(Max) | 2 | Single | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N4150UR-1 | Microsemi |
Min: 1 Mult: 1 |
download | Military, MIL-PRF-19500/231 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | /files/microsemicorporation-1n4150ur1-datasheets-2339.pdf | DO-213AA | Contains Lead | 2 | 14 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | No | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | END | WRAP AROUND | 2 | Single | 1 | Qualified | 200mA | 1V | ISOLATED | Small Signal =< 200mA (Io), Any Speed | SILICON | 100nA | 50V | 4A | 4 ns | Standard | 50V | 200mA | 100nA @ 50V | 1V @ 200mA | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||
| FST19345 | Microsemi |
Min: 1 Mult: 1 |
download | Schottky Diode | RoHS Compliant | /files/microsemi-fst19345-datasheets-7301.pdf | 9 | Dual Common Cathode | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTXV1N6677UR-1 | Microsemi |
Min: 1 Mult: 1 |
download | Military, MIL-PRF-19500/610 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 125°C | -65°C | Non-RoHS Compliant | 1997 | /files/microsemicorporation-cdll6676-datasheets-6366.pdf | DO-213AA | 2 | 15 Weeks | 2 | IN PRODUCTION (Last Updated: 3 weeks ago) | no | EAR99 | METALLURGICALLY BONDED | No | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/610E | END | WRAP AROUND | 2 | Single | 1 | Qualified | 200mA | 700mV | ISOLATED | Small Signal =< 200mA (Io), Any Speed | SILICON | 5μA | 40V | Schottky | 50pF @ 0V 1MHz | 5μA @ 40V | 500mV @ 200mA | -65°C~125°C | ||||||||||||||||||||||||||||||||||||||||||||||||
| LXMG1626-12-46 | Microsemi |
Min: 1 Mult: 1 |
download | RoHS Compliant | /files/microsemi-lxmg16261246-datasheets-9208.pdf | 12 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N6628 | Microsemi |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 150°C | -65°C | AVALANCHE | RoHS Compliant | 1997 | /files/microsemicorporation-jantxv1n6628-datasheets-8347.pdf | 600V | 4A | A, Axial | 40pF | Lead Free | 2 | 17 Weeks | 2 | METALLURGICALLY BONDED, HIGH RELIABILITY | Lead, Tin | Yes | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | WIRE | NOT SPECIFIED | 1N6628 | 2 | Single | NOT SPECIFIED | 1 | Not Qualified | 4A | 1.75A | 1.5V | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 660V | 75A | 45 ns | Standard | 600V | 1.75A | 1 | 2μA @ 600V | 1.35V @ 2A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||
| DATA PACK-JANS1N6677UR-1 | Microsemi |
Min: 1 Mult: 1 |
download | Schottky Diode | Waffle | RoHS non-compliant | /files/microsemi-datapackjans1n6677ur1-datasheets-0702.pdf | 1.7(Max) | 2 | Single | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N6622US | Microsemi |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | AVALANCHE | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n6622us-datasheets-9253.pdf | SQ-MELF, A | Contains Lead | 2 | 17 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | HIGH RELIABILITY | Lead, Tin | Yes | not_compliant | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | END | WRAP AROUND | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Not Qualified | 1.2A | 1.6V | ISOLATED | ULTRA FAST RECOVERY | 13 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500nA | 660V | 20A | 30 ns | Standard | 660V | 1.2A | 1 | 10pF @ 10V 1MHz | 500nA @ 660V | 1.4V @ 1.2A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||
| CPT20040 | Microsemi |
Min: 1 Mult: 1 |
download | Schottky Diode | RoHS Compliant | /files/microsemi-cpt20040-datasheets-3507.pdf | 3 | Dual Common Cathode | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTXV1N5809US | Microsemi |
Min: 1 Mult: 1 |
download | Military, MIL-PRF-19500/477 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n5809us-datasheets-7944.pdf | SQ-MELF, B | Contains Lead | 2 | 14 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | HIGH RELIABILITY, METALLURGICALLY BONDED | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500 | END | WRAP AROUND | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Qualified | 875mV | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5W | 125A | 30 ns | Standard | 100V | 3A | 1 | 3A | 60pF @ 10V 1MHz | 5μA @ 100V | 875mV @ 4A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||
| R504100 | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Tray | RoHS non-compliant | /files/microsemi-r504120-datasheets-5608.pdf | 2 | Single | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N6640 | Microsemi |
Min: 1 Mult: 1 |
download | Military, MIL-PRF-19500/609 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1999 | /files/microsemicorporation-jans1n6640-datasheets-6197.pdf | D, Axial | 2 | 8 Weeks | 2 | no | EAR99 | METALLURGICALLY BONDED | Lead, Tin | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/609D | WIRE | NOT SPECIFIED | 1N6640 | 2 | Single | NOT SPECIFIED | 1 | Qualified | 300mA | 1V | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 50V | 2.5A | 0.1μA | DO-35 | 4 ns | Standard | 50V | 300mA | 0.3A | 100nA @ 50V | 1V @ 200mA | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||
| UM7006D | Microsemi |
Min: 1 Mult: 1 |
Attenuator|Switch | RoHS non-compliant | /files/microchiptechnology-um7006b-datasheets-7919.pdf | 2 | Single | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N5195 | Microsemi |
Min: 1 Mult: 1 |
download | Military, MIL-PRF-19500/118 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n5195-datasheets-6129.pdf | DO-204AH, DO-35, Axial | 14 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | No | e0 | Tin/Lead (Sn/Pb) | Single | Qualified | 200mA | 1V | Small Signal =< 200mA (Io), Any Speed | 180V | 2A | Standard | 1μA @ 200V | 1V @ 100mA | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GRP-A-DATA-JANTX1N3611 | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Bag | RoHS non-compliant | /files/microsemi-grpbdatajan1n3611-datasheets-4721.pdf | 2.16(Max) | 2 | Single | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N645UR-1 | Microsemi |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | /files/microsemicorporation-jantx1n645ur1-datasheets-9443.pdf | DO-213AA | 2 | 8 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | EAR99 | METALLURGICALLY BONDED | Lead, Tin | 8541.10.00.70 | e0 | TIN LEAD | MIL | END | WRAP AROUND | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Not Qualified | 400mA | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 0.5W | 225V | Standard | 225V | 400mA | 0.4A | 50nA @ 225V | 1V @ 400mA | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||
| GRP-ABC-JANTX1N3957 | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Bag | RoHS non-compliant | /files/microsemi-grpbdatajan1n3611-datasheets-4721.pdf | 2.16(Max) | 2 | Single |
