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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Frequency | Operating Supply Current | Operating Mode | Height Seated (Max) | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Operating Supply Voltage | Lead Free | Number of Terminations | Factory Lead Time | Weight | Max Supply Voltage | Min Supply Voltage | Number of Pins | Interface | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Max Frequency | Reach Compliance Code | HTS Code | JESD-609 Code | Feature | Terminal Finish | Applications | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Supply Voltage-Max (Vsup) | Supply Voltage-Min (Vsup) | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Power Supplies | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Data Rate | Memory Size | Number of I/O | Peripherals | Core Architecture | RAM Size | Turn On Delay Time | Speed Grade | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | Supply Type | Architecture | DS Breakdown Voltage-Min | FET Technology | Number of Outputs | Speed | Power - Max | Power Dissipation-Max | Number of Registers | Number of Inputs | Organization | Number of Gates | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | Core Processor | Connectivity | Number of Logic Elements/Cells | Number of Logic Blocks (LABs) | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Programmable Logic Type | Primary Attributes | Number of Logic Cells | Flash Size | Number of Equivalent Gates | Multiplexer/Demultiplexer Circuit | Voltage - Supply, Single (V+) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| A2F500M3G-FGG256I | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion® | -40°C~100°C TJ | Tray | 3 (168 Hours) | 100°C | -40°C | 80MHz | 2mA | RoHS Compliant | /files/microsemicorporation-a2f500m3gfgg484i-datasheets-0641.pdf | 256-LBGA | 12 Weeks | 256 | EBI/EMI, Ethernet, I2C, SPI, UART, USART | 100MHz | A2F500M3G | 256-FPBGA (17x17) | MCU - 25, FPGA - 66 | DMA, POR, WDT | ARM | 64KB | MCU, FPGA | 80MHz | 500000 | ARM® Cortex®-M3 | EBI/EMI, Ethernet, I2C, SPI, UART/USART | 24 | ProASIC®3 FPGA, 500K Gates, 11520 D-Flip-Flops | 512KB | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VSC3303XHV | Microsemi |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~110°C TA | Tray | 4 (72 Hours) | RoHS Compliant | 2009 | /files/microchiptechnology-vsc3303yhv01-datasheets-0517.pdf | 36-LBGA, FCBGA | 12 Weeks | Advanced Signal Equalization | Backplane, Cable Interconnect | 4 | Single | 4:4 | 1.8V~3.3V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| M2S025-FCS325I | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion®2 | -40°C~100°C TJ | Tray | 3 (168 Hours) | CMOS | 1.01mm | Non-RoHS Compliant | 2015 | /files/microsemicorporation-m2s025vfg256i-datasheets-0685.pdf | 325-TFBGA, CSPBGA | 11mm | 11mm | 325 | 8 Weeks | LG-MIN, WD-MIN | not_compliant | 8542.39.00.01 | e0 | Tin/Lead (Sn/Pb) | YES | BOTTOM | BALL | NOT SPECIFIED | 1.2V | 0.5mm | 1.26V | 1.14V | NOT SPECIFIED | Field Programmable Gate Arrays | 1.2V | Not Qualified | S-PBGA-B325 | 180 | DDR, PCIe, SERDES | 64KB | MCU, FPGA | 180 | 166MHz | 180 | ARM® Cortex®-M3 | CANbus, Ethernet, I2C, SPI, UART/USART, USB | FIELD PROGRAMMABLE GATE ARRAY | FPGA - 25K Logic Modules | 27696 | 256KB | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTM50HM65FT3G | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2006 | /files/microsemicorporation-aptm50hm65ft3g-datasheets-3258.pdf | SP3 | Lead Free | 25 | 16 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 390W | UPPER | UNSPECIFIED | 25 | 390W | 4 | R-XUFM-X25 | 21 ns | 38ns | 93 ns | 75 ns | 51A | 30V | SILICON | COMPLEX | ISOLATED | SWITCHING | 500V | 500V | METAL-OXIDE SEMICONDUCTOR | 0.078Ohm | 4 N-Channel (H-Bridge) | 7000pF @ 25V | 78m Ω @ 25.5A, 10V | 5V @ 2.5mA | 140nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| M2S025T-1VF400 | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion®2 | 0°C~85°C TJ | Tray | 3 (168 Hours) | 85°C | 0°C | 166MHz | Non-RoHS Compliant | 2009 | /files/microsemicorporation-m2s005svfg256i-datasheets-1572.pdf | 400-LFBGA | 10 Weeks | 400 | CAN, Ethernet, I2C, SPI, UART, USART, USB | IN PRODUCTION (Last Updated: 1 month ago) | M2S025T | 400-VFBGA (17x17) | 207 | DDR, PCIe, SERDES | ARM | 64KB | MCU, FPGA | 166MHz | ARM® Cortex®-M3 | CANbus, Ethernet, I2C, SPI, UART/USART, USB | FPGA - 25K Logic Modules | 256KB | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTM50TAM65FPG | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2012 | /files/microsemicorporation-aptm50tam65fpg-datasheets-9449.pdf | SP6 | 21 | 36 Weeks | 6 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 390W | UPPER | UNSPECIFIED | 21 | 390W | 6 | R-XUFM-X21 | 21 ns | 38ns | 93 ns | 75 ns | 51A | 30V | SILICON | 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 500V | 500V | METAL-OXIDE SEMICONDUCTOR | 204A | 0.078Ohm | 3000 mJ | 6 N-Channel (3-Phase Bridge) | 7000pF @ 25V | 78m Ω @ 25.5A, 10V | 5V @ 2.5mA | 140nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| M2S025-1VFG400I | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion®2 | -40°C~100°C TJ | Tray | 3 (168 Hours) | 100°C | -40°C | 166MHz | RoHS Compliant | 2009 | /files/microsemicorporation-m2s005svfg256i-datasheets-1572.pdf | 400-LFBGA | 8 Weeks | 400 | CAN, Ethernet, I2C, SPI, UART, USART, USB | IN PRODUCTION (Last Updated: 1 month ago) | M2S025 | 400-VFBGA (17x17) | 207 | DDR, PCIe, SERDES | ARM | 64KB | MCU, FPGA | 166MHz | ARM® Cortex®-M3 | CANbus, Ethernet, I2C, SPI, UART/USART, USB | FPGA - 25K Logic Modules | 256KB | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTM120A20SG | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 1999 | /files/microsemicorporation-aptm120a20sg-datasheets-9497.pdf | SP6 | 7 | 36 Weeks | 6 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 1.25kW | UPPER | UNSPECIFIED | 7 | 1.25kW | 2 | R-XUFM-X7 | 10 ns | 10ns | 36 ns | 68 ns | 50A | 30V | SILICON | ISOLATED | SWITCHING | 1200V 1.2kV | METAL-OXIDE SEMICONDUCTOR | 1250W | 1300 mJ | 2 N-Channel (Half Bridge) | 15200pF @ 25V | 240m Ω @ 25A, 10V | 5V @ 6mA | 600nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| M2S050-1FCS325 | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion®2 | 0°C~85°C TJ | Tray | 3 (168 Hours) | CMOS | 1.01mm | Non-RoHS Compliant | 2015 | /files/microsemicorporation-m2s025vfg256i-datasheets-0685.pdf | 325-TFBGA, CSPBGA | 11mm | 11mm | 325 | 10 Weeks | IN PRODUCTION (Last Updated: 2 weeks ago) | LG-MIN, WD-MIN | not_compliant | 8542.39.00.01 | e0 | Tin/Lead (Sn/Pb) | YES | BOTTOM | BALL | NOT SPECIFIED | 1.2V | 0.5mm | 1.26V | 1.14V | NOT SPECIFIED | Field Programmable Gate Arrays | 1.2V | Not Qualified | S-PBGA-B325 | 200 | DDR, PCIe, SERDES | 64KB | MCU, FPGA | 200 | 166MHz | 200 | ARM® Cortex®-M3 | CANbus, Ethernet, I2C, SPI, UART/USART, USB | FIELD PROGRAMMABLE GATE ARRAY | FPGA - 50K Logic Modules | 56340 | 256KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTMC120TAM17CTPAG | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Through Hole | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | RoHS Compliant | 1997 | /files/microsemicorporation-aptmc120tam17ctpag-datasheets-9562.pdf | SP6 | 36 Weeks | 6 | IN PRODUCTION (Last Updated: 1 month ago) | EAR99 | 625W | NOT SPECIFIED | NOT SPECIFIED | 35 ns | 40ns | 70 ns | 150 ns | 147A | 1200V 1.2kV | 6 N-Channel (3-Phase Bridge) | 5600pF @ 1000V | 17m Ω @ 100A, 20V | 2.4V @ 20mA (Typ) | 147A Tc | 322nC @ 20V | Silicon Carbide (SiC) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| M2S060-VF400 | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion®2 | 0°C~85°C TJ | Tray | 3 (168 Hours) | CMOS | 1.51mm | Non-RoHS Compliant | 2015 | /files/microsemicorporation-m2s025vfg256i-datasheets-0685.pdf | 400-LFBGA | 17mm | 17mm | 400 | 11 Weeks | IN PRODUCTION (Last Updated: 2 weeks ago) | not_compliant | 8542.39.00.01 | e0 | Tin/Lead (Sn/Pb) | YES | BOTTOM | BALL | NOT SPECIFIED | 1.2V | 0.8mm | 1.26V | 1.14V | NOT SPECIFIED | Field Programmable Gate Arrays | 1.2V | Not Qualified | S-PBGA-B400 | 207 | DDR, PCIe, SERDES | 64KB | MCU, FPGA | 207 | 166MHz | 207 | ARM® Cortex®-M3 | CANbus, Ethernet, I2C, SPI, UART/USART, USB | FIELD PROGRAMMABLE GATE ARRAY | FPGA - 60K Logic Modules | 56520 | 256KB | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTC80H29T1G | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2007 | /files/microsemicorporation-aptc80h29t1g-datasheets-5033.pdf | SP1 | 12 | 1 | AVALANCHE RATED | unknown | e1 | TIN SILVER COPPER | 156W | UPPER | UNSPECIFIED | NOT SPECIFIED | 12 | NOT SPECIFIED | 156W | 4 | FET General Purpose Power | Not Qualified | 15A | 30V | SILICON | COMPLEX | ISOLATED | SWITCHING | 800V | 800V | METAL-OXIDE SEMICONDUCTOR | 60A | 0.29Ohm | 670 mJ | 4 N-Channel (H-Bridge) | 2254pF @ 25V | 290m Ω @ 7.5A, 10V | 3.9V @ 1mA | 90nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| M2S025T-1VF256I | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion®2 | -40°C~100°C TJ | Tray | 3 (168 Hours) | CMOS | 1.56mm | Non-RoHS Compliant | 2015 | /files/microsemicorporation-m2s025vfg256i-datasheets-0685.pdf | 256-LFBGA | 14mm | 14mm | 256 | 10 Weeks | LG-MIN, WD-MIN | not_compliant | 8542.39.00.01 | e0 | Tin/Lead (Sn/Pb) | YES | BOTTOM | BALL | NOT SPECIFIED | 1.2V | 0.8mm | 1.26V | 1.14V | NOT SPECIFIED | Field Programmable Gate Arrays | 1.2V | Not Qualified | S-PBGA-B256 | 138 | DDR, PCIe, SERDES | 64KB | MCU, FPGA | 138 | 166MHz | 138 | ARM® Cortex®-M3 | CANbus, Ethernet, I2C, SPI, UART/USART, USB | FIELD PROGRAMMABLE GATE ARRAY | FPGA - 25K Logic Modules | 27696 | 256KB | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTM120DDA57T3G | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | 150°C | -40°C | RoHS Compliant | 2006 | /files/microsemicorporation-aptm120dda57t3g-datasheets-5080.pdf | SP3 | 3 | No | 390W | 390W | 2 | SP3 | 5.155nF | 20 ns | 15ns | 45 ns | 160 ns | 17A | 30V | 1200V 1.2kV | 390W | 2 N-Channel (Dual) | 5155pF @ 25V | 684mOhm @ 8.5A, 10V | 5V @ 2.5mA | 17A | 187nC @ 10V | Standard | 684 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| M2S060-FGG676 | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion®2 | 0°C~85°C TJ | Tray | 3 (168 Hours) | CMOS | 2.44mm | RoHS Compliant | 2015 | /files/microsemicorporation-m2s025vfg256i-datasheets-0685.pdf | 676-BGA | 27mm | 27mm | 676 | 11 Weeks | IN PRODUCTION (Last Updated: 2 weeks ago) | 8542.39.00.01 | e3 | MATTE TIN | YES | BOTTOM | BALL | NOT SPECIFIED | 1.2V | 1mm | 1.26V | 1.14V | NOT SPECIFIED | Field Programmable Gate Arrays | 1.2V | Not Qualified | S-PBGA-B676 | 387 | DDR, PCIe, SERDES | 64KB | MCU, FPGA | 387 | 166MHz | 387 | ARM® Cortex®-M3 | CANbus, Ethernet, I2C, SPI, UART/USART, USB | FIELD PROGRAMMABLE GATE ARRAY | FPGA - 60K Logic Modules | 56520 | 256KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTC80DDA29T3G | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2006 | /files/microsemicorporation-aptc80dda29t3g-datasheets-5120.pdf | SP3 | 25 | 3 | AVALANCHE RATED | unknown | e1 | TIN SILVER COPPER | 156W | UPPER | UNSPECIFIED | NOT SPECIFIED | 25 | NOT SPECIFIED | 156W | 2 | FET General Purpose Power | Not Qualified | 15A | 30V | SILICON | ISOLATED | SWITCHING | 800V | 800V | METAL-OXIDE SEMICONDUCTOR | 60A | 670 mJ | 2 N-Channel (Dual) | 2254pF @ 25V | 290m Ω @ 7.5A, 10V | 3.9V @ 1mA | 90nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| M2S025TS-1FG484I | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion®2 | -40°C~100°C TJ | Tray | 3 (168 Hours) | 100°C | -40°C | 166MHz | Non-RoHS Compliant | 2016 | /files/microsemicorporation-m2s005svfg256i-datasheets-1572.pdf | 484-BGA | 1.2V | 10 Weeks | 1.26V | 1.14V | 484 | CAN, Ethernet, I2C, SPI, UART, USART, USB | IN PRODUCTION (Last Updated: 1 month ago) | M2S025TS | 484-FPBGA (23x23) | 267 | DDR, PCIe, SERDES | ARM | 64KB | MCU, FPGA | 166MHz | ARM® Cortex®-M3 | CANbus, Ethernet, I2C, SPI, UART/USART, USB | FPGA - 25K Logic Modules | 256KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTM50DUM25TG | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2009 | /files/microsemicorporation-aptm50dum25tg-datasheets-5283.pdf | SP4 | 15 | 4 | yes | AVALANCHE RATED | e1 | TIN SILVER COPPER | 1.25kW | UPPER | UNSPECIFIED | NOT SPECIFIED | 15 | NOT SPECIFIED | 2 | FET General Purpose Power | Not Qualified | R-XUFM-X15 | 149A | SILICON | COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR | ISOLATED | SWITCHING | 500V | 500V | METAL-OXIDE SEMICONDUCTOR | 1250W | 300A | 0.025Ohm | 1300 mJ | 2 N-Channel (Dual) | 29600pF @ 25V | 25m Ω @ 74.5A, 10V | 4V @ 8mA | 1200nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| M2S025T-VF256I | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion®2 | -40°C~100°C TJ | Tray | 3 (168 Hours) | CMOS | 1.56mm | Non-RoHS Compliant | 2015 | /files/microsemicorporation-m2s025vfg256i-datasheets-0685.pdf | 256-LFBGA | 14mm | 14mm | 256 | 10 Weeks | IN PRODUCTION (Last Updated: 2 weeks ago) | LG-MIN, WD-MIN | not_compliant | 8542.39.00.01 | e0 | Tin/Lead (Sn/Pb) | YES | BOTTOM | BALL | NOT SPECIFIED | 1.2V | 0.8mm | 1.26V | 1.14V | NOT SPECIFIED | Field Programmable Gate Arrays | 1.2V | Not Qualified | S-PBGA-B256 | 138 | DDR, PCIe, SERDES | 64KB | MCU, FPGA | 138 | 166MHz | 138 | ARM® Cortex®-M3 | CANbus, Ethernet, I2C, SPI, UART/USART, USB | FIELD PROGRAMMABLE GATE ARRAY | FPGA - 25K Logic Modules | 27696 | 256KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTM100H46FT3G | Microsemi |
Min: 1 Mult: 1 |
download | POWER MOS 8™ | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | RoHS Compliant | 2012 | /files/microsemicorporation-aptm100h46ft3g-datasheets-0427.pdf | SP3 | 36 Weeks | 3 | EAR99 | 357W | 357W | 4 | FET General Purpose Power | 19A | 30V | 1000V 1kV | METAL-OXIDE SEMICONDUCTOR | 4 N-Channel (H-Bridge) | 6800pF @ 25V | 552m Ω @ 16A, 10V | 5V @ 2.5mA | 260nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| A2F500M3G-1FGG256 | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion® | Surface Mount | 0°C~85°C TJ | Tray | 3 (168 Hours) | 85°C | 0°C | 100MHz | 16.5mA | RoHS Compliant | /files/microsemicorporation-a2f500m3gfgg484i-datasheets-0641.pdf | 256-LBGA | 1.5V | Lead Free | 1.575V | 1.425V | 256 | EBI/EMI, Ethernet, I2C, SPI, UART, USART | No | 120MHz | A2F500M3G | 256-FPBGA (17x17) | 400 kbps | 13.5kB | MCU - 25, FPGA - 66 | DMA, POR, WDT | ARM | 64KB | MCU, FPGA | 100MHz | 500000 | ARM® Cortex®-M3 | EBI/EMI, Ethernet, I2C, SPI, UART/USART | 5500 | ProASIC®3 FPGA, 500K Gates, 11520 D-Flip-Flops | 512KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTM20AM10FTG | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2006 | /files/microsemicorporation-aptm20am10ftg-datasheets-0471.pdf | SP4 | 12 | 36 Weeks | 4 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 694W | UPPER | UNSPECIFIED | 12 | 694W | 2 | 28 ns | 56ns | 99 ns | 81 ns | 175A | 30V | SILICON | ISOLATED | SWITCHING | 200V | METAL-OXIDE SEMICONDUCTOR | 700A | 2 N-Channel (Half Bridge) | 13700pF @ 25V | 12m Ω @ 87.5A, 10V | 5V @ 5mA | 224nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| A2F060M3E-1CSG288I | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion® | -40°C~100°C TJ | Tray | 3 (168 Hours) | 100°C | -40°C | 100MHz | RoHS Compliant | 2015 | /files/microsemicorporation-a2f060m3etq144-datasheets-5555.pdf | 288-TFBGA, CSPBGA | 1.5V | 288 | EBI/EMI, I2C, SPI, UART, USART | No | 100MHz | A2F060M3E | 288-CSP (11x11) | MCU - 28, FPGA - 68 | DMA, POR, WDT | ARM | 16KB | 1 | MCU, FPGA | 100MHz | 1536 | ARM® Cortex®-M3 | EBI/EMI, I2C, SPI, UART/USART | 8 | ProASIC®3 FPGA, 60K Gates, 1536D-Flip-Flops | 128KB | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTM10AM05FTG | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2012 | /files/microsemicorporation-aptm10am05ftg-datasheets-0509.pdf | SP4 | 12 | 36 Weeks | 4 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 780W | UPPER | UNSPECIFIED | 12 | 780W | 2 | 80 ns | 165ns | 135 ns | 280 ns | 278A | 30V | SILICON | ISOLATED | SWITCHING | 100V | 100V | METAL-OXIDE SEMICONDUCTOR | 1100A | 0.005Ohm | 3000 mJ | 2 N-Channel (Half Bridge) | 20000pF @ 25V | 5m Ω @ 125A, 10V | 4V @ 5mA | 700nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| A2F060M3E-CSG288 | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion® | 0°C~85°C TJ | Tray | 3 (168 Hours) | 85°C | 0°C | 80MHz | RoHS Compliant | 2015 | /files/microsemicorporation-a2f060m3etq144-datasheets-5555.pdf | 288-TFBGA, CSPBGA | 2 Weeks | EBI/EMI, I2C, SPI, UART, USART | 100MHz | A2F060M3E | 288-CSP (11x11) | MCU - 28, FPGA - 68 | DMA, POR, WDT | ARM | 16KB | MCU, FPGA | 80MHz | ARM® Cortex®-M3 | EBI/EMI, I2C, SPI, UART/USART | 8 | ProASIC®3 FPGA, 60K Gates, 1536D-Flip-Flops | 128KB | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTMC120HR11CT3AG | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount | -40°C~150°C TJ | Bulk | RoHS Compliant | 1997 | /files/microsemicorporation-aptmc120hr11ct3ag-datasheets-1242.pdf | Module | SP3 | 1200V 1.2kV | 125W | 2 N-Channel (Dual) | 950pF @ 1000V | 98mOhm @ 20A, 20V | 3V @ 5mA | 26A Tc | 62nC @ 20V | Silicon Carbide (SiC) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| A2F500M3G-1CSG288I | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion® | -40°C~100°C TJ | Tray | 3 (168 Hours) | CMOS | 100MHz | 1.05mm | RoHS Compliant | 2013 | /files/microsemicorporation-a2f500m3gfgg484i-datasheets-0641.pdf | 288-TFBGA, CSPBGA | 11mm | 11mm | 1.5V | 288 | 10 Weeks | 1.575V | 1.425V | EBI/EMI, Ethernet, I2C, SPI, UART, USART | 8542.39.00.01 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | YES | BOTTOM | BALL | 260 | 1.5V | 0.5mm | A2F500M3G | 30 | Field Programmable Gate Arrays | 1.51.82.53.3V | Not Qualified | S-PBGA-B288 | MCU - 31, FPGA - 78 | DMA, POR, WDT | ARM | 64KB | MCU, FPGA | 78 | 78 | 11520 CLBS, 500000 GATES | ARM® Cortex®-M3 | EBI/EMI, Ethernet, I2C, SPI, UART/USART | FIELD PROGRAMMABLE GATE ARRAY | ProASIC®3 FPGA, 500K Gates, 11520 D-Flip-Flops | 512KB | 500000 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTC60DDAM45CT1G | Microsemi |
Min: 1 Mult: 1 |
download | CoolMOS™ | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2012 | /files/microsemicorporation-aptc60ddam45ct1g-datasheets-5970.pdf | SP1 | 10 | 1 | EAR99 | AVALANCHE RATED, ULTRA-LOW RESISTANCE | No | 250W | UPPER | UNSPECIFIED | 12 | 250W | 2 | FET General Purpose Power | 21 ns | 30ns | 45 ns | 100 ns | 49A | 20V | SILICON | COMPLEX | ISOLATED | SWITCHING | 600V | 600V | METAL-OXIDE SEMICONDUCTOR | 0.045Ohm | 2 N-Channel (Dual) | 7200pF @ 25V | 45m Ω @ 24.5A, 10V | 3.9V @ 3mA | 150nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| M2S100S-1FC1152I | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion®2 | -40°C~100°C TJ | Tray | 3 (168 Hours) | 100°C | -40°C | 166MHz | Non-RoHS Compliant | 2009 | /files/microsemicorporation-m2s005svfg256i-datasheets-1572.pdf | 1152-BBGA, FCBGA | 1.2V | 1.26V | 1.14V | 1152 | CAN, Ethernet, I2C, SPI, UART, USART, USB | M2S100S | 1152-FCBGA (35x35) | 574 | DDR, PCIe, SERDES | ARM | 64KB | MCU, FPGA | 166MHz | ARM® Cortex®-M3 | CANbus, Ethernet, I2C, SPI, UART/USART, USB | FPGA - 100K Logic Modules | 512KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT77N60JC3 | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | /files/microsemicorporation-apt77n60jc3-datasheets-4907.pdf | 600V | 77A | SOT-227-4, miniBLOC | 38.2mm | 9.6mm | 25.4mm | Lead Free | 4 | 24 Weeks | 30.000004g | 4 | no | EAR99 | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | UPPER | UNSPECIFIED | 4 | 1 | Single | 568W | 1 | 18 ns | 27ns | 8 ns | 110 ns | 77A | 20V | SILICON | ISOLATED | 568W Tc | 0.035Ohm | 600V | N-Channel | 13600pF @ 25V | 35m Ω @ 60A, 10V | 3.9V @ 5.4mA | 77A Tc | 640nC @ 10V | 10V | ±20V |
