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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Type | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Voltage - Rated | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Diameter | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Gain | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Drain to Source Voltage (Vdss) | FET Technology | Power - Max | Highest Frequency Band | Collector Emitter Breakdown Voltage | Collector Emitter Saturation Voltage | Turn On Time | Collector Emitter Voltage (VCEO) | Max Collector Current | Organization | Refresh Cycles | Self Refresh | Drain to Source Resistance | Input | PLL | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Collector Base Voltage (VCBO) | Emitter Base Voltage (VEBO) | Turn Off Time-Nom (toff) | VCEsat-Max | Gate-Emitter Voltage-Max | Current - Collector Cutoff (Max) | Vce(on) (Max) @ Vge, Ic | IGBT Type | NTC Thermistor | Input Capacitance (Cies) @ Vce | Transistor Type | DC Current Gain (hFE) (Min) @ Ic, Vce | Collector-Base Capacitance-Max | Noise Figure (dB Typ @ f) | Frequency - Transition |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| APTGT100DH170G | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | 150°C | -40°C | RoHS Compliant | SP6 | 8 | 560W | Dual | SP6 | 9nF | Asymmetrical Bridge | 560W | 1.7kV | 1.7kV | 150A | Standard | 1700V | 150A | 350μA | 2.4V @ 15V, 100A | Trench Field Stop | No | 9nF @ 25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTXV1N4148 | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | RoHS non-compliant | /files/microsemi-jantx1n4148-datasheets-4538.pdf | 2.29(Max) | 2 | Single | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGT50A60T1G | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount | Chassis Mount | -40°C~175°C TJ | 1 (Unlimited) | RoHS Compliant | 2007 | /files/microsemicorporation-aptgt50a60t1g-datasheets-7879.pdf | SP1 | 12 | 1 | unknown | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 176W | UPPER | THROUGH-HOLE | NOT SPECIFIED | 12 | Dual | NOT SPECIFIED | 2 | Insulated Gate BIP Transistors | Not Qualified | 3.15nF | SILICON | Half Bridge | ISOLATED | MOTOR CONTROL | N-CHANNEL | 176W | 600V | 170 ns | 1.9V | 80A | Standard | 310 ns | 20V | 250μA | 1.9V @ 15V, 50A | Trench Field Stop | Yes | 3.15nF @ 25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DATA-JANS1N5819UR-1 | Microsemi |
Min: 1 Mult: 1 |
download | Schottky Diode | Waffle | RoHS non-compliant | /files/microsemi-grpadatajan1n5819ur1-datasheets-5682.pdf | 2.66(Max) | 2 | Single | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGT50TA170PG | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | RoHS Compliant | 2006 | /files/microsemicorporation-aptgt50ta170pg-datasheets-7908.pdf | SP6 | 21 | 6 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 310W | UPPER | UNSPECIFIED | 21 | 6 | R-XUFM-X21 | 4.4nF | SILICON | Three Phase | ISOLATED | POWER CONTROL | N-CHANNEL | 310W | 1.7kV | 450 ns | 2.4V | 70A | Standard | 1700V | 1050 ns | 250μA | 2.4V @ 15V, 50A | Trench Field Stop | No | 4.4nF @ 25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT60S20B | Microsemi |
Min: 1 Mult: 1 |
download | Schottky Diode | RoHS non-compliant | /files/microsemi-apt60s20sgtr-datasheets-7023.pdf | 2 | Single | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGT30SK170T1G | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | RoHS Compliant | 2012 | /files/microsemicorporation-aptrg8a120g-datasheets-4026.pdf | SP1 | 12 | 22 Weeks | 1 | yes | EAR99 | No | e1 | TIN SILVER COPPER | 210W | UPPER | THROUGH-HOLE | 12 | 1 | Insulated Gate BIP Transistors | 2.5nF | SILICON | Single | ISOLATED | MOTOR CONTROL | N-CHANNEL | 210W | 1.7kV | 170 ns | 2.4V | 45A | Standard | 1700V | 850 ns | 20V | 250μA | 2.4V @ 15V, 30A | Trench Field Stop | Yes | 2.5nF @ 25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GRP-A-DATA-JANTX1N6623US | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Bag | RoHS non-compliant | /files/microsemi-grpadatajan1n6621us-datasheets-1257.pdf | 2 | Single | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGT30DA170D1G | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | RoHS Compliant | 2007 | /files/microsemicorporation-aptgt30da170d1g-datasheets-7961.pdf | D1 | 7 | yes | e1 | TIN SILVER COPPER | 210W | UPPER | UNSPECIFIED | 7 | 1 | R-XUFM-X7 | 2.5nF | SILICON | Single | ISOLATED | MOTOR CONTROL | N-CHANNEL | 210W | 1.7kV | 330 ns | 2.4V | 45A | Standard | 1700V | 965 ns | 3mA | 2.4V @ 15V, 30A | Trench Field Stop | No | 2.5nF @ 25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MSASC25W100KV | Microsemi |
Min: 1 Mult: 1 |
Schottky Diode | RoHS non-compliant | /files/microsemi-msasc25w100kv-datasheets-1588.pdf | 2 | Single | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGT50H120TG | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | RoHS Compliant | 2006 | /files/microsemicorporation-aptrg8a120g-datasheets-4026.pdf | SP4 | 14 | 22 Weeks | 20 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 277W | UPPER | UNSPECIFIED | 14 | 4 | R-XUFM-X14 | 3.6nF | SILICON | Full Bridge Inverter | ISOLATED | POWER CONTROL | N-CHANNEL | 277W | 1.2kV | 140 ns | 1.2kV | 75A | Standard | 1200V | 610 ns | 250μA | 2.1V @ 15V, 50A | Trench Field Stop | Yes | 3.6nF @ 25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GRP-A-DATA-JANS1N5806 | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Tray | RoHS non-compliant | /files/microsemi-grpbdatajantx1n5802-datasheets-7299.pdf | 2.16(Max) | 2 | Single | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGT20DSK60T3G | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount | Chassis Mount | -40°C~175°C TJ | 1 (Unlimited) | RoHS Compliant | 2006 | /files/microsemicorporation-aptgt20dsk60t3g-datasheets-8104.pdf | SP3 | 25 | 3 | AVALANCHE RATED | unknown | e1 | TIN SILVER COPPER | 62W | UPPER | UNSPECIFIED | NOT SPECIFIED | 25 | Dual | NOT SPECIFIED | 2 | Insulated Gate BIP Transistors | Not Qualified | R-XUFM-X25 | 1.1nF | SILICON | Dual Buck Chopper | ISOLATED | POWER CONTROL | N-CHANNEL | 62W | 600V | 170 ns | 1.9V | 32A | Standard | 310 ns | 20V | 250μA | 1.9V @ 15V, 20A | Trench Field Stop | Yes | 1.1nF @ 25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| W332M72V-133SBI | Microsemi |
Min: 1 Mult: 1 |
download | Supplier Unconfirmed | /files/microsemi-w332m72v133sbi-datasheets-8495.pdf | 208 | SDRAM | 32Mx72 | 8K | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT100GT120JRDQ4 | Microsemi |
Min: 1 Mult: 1 |
download | Thunderbolt IGBT® | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | 1 (Unlimited) | RoHS Compliant | 2001 | /files/microsemicorporation-aptrg8a120g-datasheets-4026.pdf | ISOTOP | 4 | 29 Weeks | 4 | EAR99 | HIGH RELIABILITY, UL RECOGNIZED | 570W | UPPER | UNSPECIFIED | 4 | 1 | Insulated Gate BIP Transistors | 7.85nF | SILICON | Single | ISOLATED | POWER CONTROL | N-CHANNEL | 570W | 1.2kV | 150 ns | 1.2kV | 123A | Standard | 1200V | 747 ns | 3.7 V | 20V | 200μA | 3.7V @ 15V, 100A | NPT | No | 7.85nF @ 25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANS DATA-JANS1N5618 | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Tray | RoHS non-compliant | /files/microsemi-grpbdatajan1n5614-datasheets-8553.pdf | 2.16(Max) | 2 | Single | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT60GA60JD60 | Microsemi |
Min: 1 Mult: 1 |
download | POWER MOS 8™ | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | 1 (Unlimited) | RoHS Compliant | 1999 | SOT-227-4, miniBLOC | 38.2mm | 9.6mm | 25.4mm | 4 | 32 Weeks | 30.000004g | 4 | yes | LOW CONDUCTION LOSS, UL RECOGNIZED | 356W | UPPER | UNSPECIFIED | 4 | 1 | 8.01nF | SILICON | Single | ISOLATED | POWER CONTROL | N-CHANNEL | 356W | 600V | 2V | 82 ns | 600V | 112A | Standard | 333 ns | 275μA | 2.5V @ 15V, 62A | PT | No | 8.01nF @ 25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GRP-B-DATA-JAN1N5416 | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Bag | RoHS non-compliant | /files/microsemi-grpbdatajantx1n5420-datasheets-7765.pdf | 3.42(Max) | 2 | Single | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT150GN60J | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -55°C~175°C TJ | 1 (Unlimited) | RoHS Compliant | 1999 | /files/microsemicorporation-aptrg8a120g-datasheets-4026.pdf | 600V | 220A | ISOTOP | 38.2mm | 9.6mm | 25.4mm | Lead Free | 4 | 24 Weeks | 30.000004g | 4 | yes | UL RECOGNIZED, HIGH RELIABILITY | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 536W | UPPER | UNSPECIFIED | 4 | 1 | Insulated Gate BIP Transistors | 9.2nF | 44 ns | 430 ns | SILICON | Single | ISOLATED | POWER CONTROL | N-CHANNEL | 600V | 1.5V | 154 ns | 600V | 220A | Standard | 575 ns | 30V | 25μA | 1.85V @ 15V, 150A | Trench Field Stop | No | 9.2nF @ 25V | ||||||||||||||||||||||||||||||||||||||||||||||||
| JANS1N5618US | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Waffle | RoHS non-compliant | https://pdf.utmel.com/r/datasheets/microsemi-grpbdatajans1n5616us-datasheets-2028.pdf | 2 | Single | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT65GP60JDQ2 | Microsemi |
Min: 1 Mult: 1 |
download | POWER MOS 7® | Screw | Chassis Mount | 1 (Unlimited) | 150°C | -55°C | RoHS Compliant | 1999 | /files/microsemicorporation-apt65gp60jdq2-datasheets-0871.pdf | 600V | 198A | ISOTOP | Lead Free | 4 | No | Single | ISOTOP® | Single | 431W | 600V | 130A | Standard | 600V | 130A | 1.25mA | 2.7V @ 15V, 65A | PT | No | 7.4nF @ 25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GRP-B-DATA-JANTX1N6642U | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Bag | RoHS non-compliant | /files/microsemi-grpadatajantx1n6643u-datasheets-6375.pdf | 2 | Single | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTMC120HRM40CT3G | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Through Hole | Chassis Mount | Bulk | 1 (Unlimited) | 175°C | -40°C | 1200V 1.2kV | RoHS Compliant | 1997 | /files/microsemicorporation-aptmc120hrm40ct3g-datasheets-5796.pdf | SP3 | Lead Free | 3 | EAR99 | 1 | Other Transistors | 110 ns | 45ns | 40 ns | 200 ns | 64A | 240W | 1.2kV | METAL-OXIDE SEMICONDUCTOR | 34mOhm | 2 N Channel (Phase Leg + Dual Common Emitter) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CPT20080 | Microsemi |
Min: 1 Mult: 1 |
download | Schottky Diode | RoHS Compliant | /files/microsemi-cpt20090-datasheets-2875.pdf | 3 | Dual Common Cathode | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| UMIL10 | Microsemi |
Min: 1 Mult: 1 |
download | Chassis, Stud | Chassis, Stud Mount | 200°C TJ | Bulk | 1 (Unlimited) | RoHS Compliant | 2004 | /files/microsemicorporation-umil10-datasheets-6381.pdf | 55FT | 4 | 55 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | HIGH RELIABILITY | No | 8541.29.00.95 | e0 | TIN LEAD | 28W | RADIAL | FLAT | 4 | 1 | Other Transistors | 10dB | O-CRPM-F4 | SILICON | SINGLE | NPN | 28W | ULTRA HIGH FREQUENCY B | 30V | 30V | 1.5A | NPN | 10 @ 200mA 5V | 100MHz~400MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| UFT40010 | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | RoHS Compliant | /files/microsemi-uft40015-datasheets-1827.pdf | 3 | Dual Common Cathode | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX2N2857UB | Microsemi |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -65°C~200°C TJ | Bulk | 1 (Unlimited) | Non-RoHS Compliant | 2007 | /files/microsemicorporation-2n2857ub-datasheets-6829.pdf | 3-SMD, No Lead | 3 | 23 Weeks | 3 | EAR99 | No | 200mW | DUAL | 3 | 200mW | 1 | 21dB | Qualified | SILICON | SINGLE | NPN | ULTRA HIGH FREQUENCY B | 15V | 40mA | 30V | 3V | NPN | 30 @ 3mA 1V | 4.5dB @ 450MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N5622/TR | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Tape and Reel | RoHS non-compliant | /files/microsemi-grpbdatajan1n5614-datasheets-8553.pdf | 2.16(Max) | 2 | Single | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MRF8372 | Microsemi |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | RoHS Compliant | 2004 | /files/microsemicorporation-mrf8372gr1-datasheets-6939.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 8 | OBSOLETE (Last Updated: 3 weeks ago) | no | EAR99 | No | e0 | Tin/Lead (Sn/Pb) | 2.2W | DUAL | GULL WING | 8 | 1 | Other Transistors | 8dB ~ 9.5dB | Single | AMPLIFIER | NPN | ULTRA HIGH FREQUENCY B | 16V | 16V | 200mA | 30V | NPN | 30 @ 50mA 5V | 2.75pF | 870MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GRP-A-DATA-JAN1N6642 | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Bag | RoHS non-compliant | /files/microsemi-data1n6642jans-datasheets-6025.pdf | 1.91(Max) | 2 | Single |
