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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Type | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Diameter | Package / Case | Lead Free | Number of Terminations | Factory Lead Time | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | Number of Functions | Max Input Voltage | JESD-609 Code | Terminal Finish | Polarity | Reference Standard | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Operating Temperature (Max) | Element Configuration | Accuracy | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Max Output Current | Forward Current | Forward Voltage | Output Type | Configuration | Case Connection | Application | Number of Outputs | Quiescent Current | Natural Thermal Resistance | Speed | Output Voltage 1 | Input Voltage (Max) | Diode Element Material | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Current-Max | Reverse Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Voltage - Output | Output Voltage Accuracy | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Output | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction | Diode Configuration | Power Supply Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MSAD70-18 | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | Bulk | 1 (Unlimited) | 150°C | -40°C | RoHS Compliant | 2011 | /files/microsemicorporation-mscd7008-datasheets-3526.pdf | D1 | 3 | 22 Weeks | 3 | EAR99 | UL RECOGNIZED | No | 8541.10.00.80 | UPPER | UNSPECIFIED | 3 | Common Anode | 2 | Rectifier Diodes | 70A | 1.48V | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5mA | 1.8kV | 1.4kA | Standard | 1.8kV | 70A | 1 | 1800V | 5mA @ 1800V | 1.48V @ 200A | 1 Pair Common Anode | ||||||||||||||||||||||||||||||||||||||||||||||
| PD69208A-GGGG-TR | Microsemi |
Min: 1 Mult: 1 |
Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CPT400100 | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | Bulk | 1 (Unlimited) | 175°C | -55°C | RoHS Compliant | 2010 | /files/microsemicorporation-cpt40090-datasheets-5335.pdf | Twin Tower | 2 | 3 | EAR99 | No | 8541.10.00.80 | UPPER | UNSPECIFIED | 2 | Common Cathode | 2 | R-XUFM-X2 | 400A | 890mV | POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5mA | 100V | 3kA | Schottky | 100V | 200A | 1 | 5mA @ 100V | 890mV @ 200A | 1 Pair Common Cathode | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SG7905.2AR-883B | Microsemi |
Min: 1 Mult: 1 |
Through Hole | Non-RoHS Compliant | OBSOLETE (Last Updated: 1 month ago) | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N4153-1 | Microsemi |
Min: 1 Mult: 1 |
download | Through Hole | Bulk | 1 (Unlimited) | Non-RoHS Compliant | 1996 | /files/microsemicorporation-1n41531-datasheets-2201.pdf | DO-204AH, DO-35, Axial | 2 | 6 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | METALLURGICALLY BONDED | 8541.10.00.70 | e0 | TIN LEAD | NO | WIRE | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | Not Qualified | O-LALF-W2 | SINGLE | ISOLATED | Small Signal =< 200mA (Io), Any Speed | SILICON | 4ns | Standard | 0.15A | 50V | 50nA @ 50V | 880mV @ 20mA | 150mA | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SG7818AT/883B | Microsemi |
Min: 1 Mult: 1 |
Through Hole | Bulk | 125°C | -55°C | BIPOLAR | Non-RoHS Compliant | 3 | OBSOLETE (Last Updated: 1 month ago) | EAR99 | Yes | 1 | Positive | BOTTOM | WIRE | 3 | 1.5 % | Not Qualified | O-MBCY-W3 | 1.5A | Fixed | 1 | 18V | 33V | 18V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N3644 | Microsemi |
Min: 1 Mult: 1 |
download | Military, MIL-PRF-19500/279 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | /files/microsemicorporation-jantx1n3644-datasheets-6252.pdf | S, Axial | 2 | 12 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | METALLURGICALLY BONDED, HIGH RELIABILITY | No | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | WIRE | Single | 1 | Qualified | 5V | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 1.5kV | 14A | Standard | 1500V | 5μA @ 1500V | 5V @ 250mA | 250mA | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||
| SG7805AIG | Microsemi |
Min: 1 Mult: 1 |
Through Hole | 125°C | -55°C | Non-RoHS Compliant | IN PRODUCTION (Last Updated: 1 month ago) | Yes | 50V | Positive | 1.5 % | 1.5A | Fixed | 1 | 6mA | 5V | 1.5 % | 1.5A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTXV1N5418 | Microsemi |
Min: 1 Mult: 1 |
download | Military, MIL-PRF-19500/411 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n5420-datasheets-7853.pdf | B, Axial | Contains Lead | 2 | 14 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/411L | WIRE | 2 | Single | 1 | Qualified | 1.5V | ISOLATED | FAST RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1μA | 400V | 80A | 150 ns | Standard | 400V | 3A | 1 | 3A | 1μA @ 400V | 1.5V @ 9A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||
| GRP-B-DATA-JANTX1N5802 | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Bag | RoHS non-compliant | /files/microsemi-grpbdatajantx1n5802-datasheets-7299.pdf | 2.16(Max) | 2 | Single | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N4447 | Microsemi |
Min: 1 Mult: 1 |
download | Through Hole | Bulk | 1 (Unlimited) | Non-RoHS Compliant | 1996 | /files/microsemicorporation-1n4447-datasheets-4442.pdf | DO-204AH, DO-35, Axial | 2 | 6 Weeks | no | EAR99 | METALLURGICALLY BONDED | 8541.10.00.70 | e0 | TIN LEAD | NO | WIRE | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | Not Qualified | O-LALF-W2 | SINGLE | ISOLATED | Small Signal =< 200mA (Io), Any Speed | SILICON | 0.025μA | 4ns | Standard | 0.5A | 0.2A | 75V | 25nA @ 20V | 1V @ 20mA | 200mA | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||
| UPS120E3/TR | Microsemi |
Min: 1 Mult: 1 |
Schottky Diode | Tape and Reel | Yes with exemptions | /files/microsemi-ups120e3tr-datasheets-7142.pdf | 2 | Single | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N4245 | Microsemi |
Min: 1 Mult: 1 |
download | Military, MIL-PRF-19500/286 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | /files/microsemicorporation-jantx1n4248-datasheets-8351.pdf | A, Axial | Contains Lead | 2 | 12 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | HIGH RELIABILITY | Yes | not_compliant | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500 | WIRE | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Qualified | 1.3V | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1μA | 200V | 25A | 5 μs | Standard | 200V | 1A | 1A | 1μA @ 200V | 1.3V @ 3A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||
| GRP-B-DATA-JANTX1N3671A | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Tray | RoHS non-compliant | /files/microsemi-grpbdatajantx1n3671a-datasheets-3765.pdf | 2 | Single | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JAN1N5711-1 | Microsemi |
Min: 1 Mult: 1 |
download | Military, MIL-PRF-19500/444 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 150°C | -65°C | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n5712-datasheets-5772.pdf | DO-204AH, DO-35, Axial | 2 | 11 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | METALLURGICALLY BONDED | No | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/444 | WIRE | 2 | Single | 1 | Qualified | 33mA | 1V | ISOLATED | Small Signal =< 200mA (Io), Any Speed | SILICON | 70V | Schottky | 0.033A | 2pF @ 0V 1MHz | 200nA @ 70V | 1V @ 15mA | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||
| GRP-B-DATA-JANTX1N5807 | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Bag | RoHS non-compliant | /files/microsemi-grpadatajan1n5811-datasheets-3001.pdf | 3.42(Max) | 2 | Single | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JAN1N5417 | Microsemi |
Min: 1 Mult: 1 |
download | Military, MIL-PRF-19500/411 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n5420-datasheets-7853.pdf | B, Axial | 2 | 8 Weeks | 2 | IN PRODUCTION (Last Updated: 2 weeks ago) | No | 8541.10.00.80 | MIL-19500/411L | END | WRAP AROUND | 2 | Single | 1 | Qualified | 1.5V | ISOLATED | FAST RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1μA | 200V | 80A | 150 ns | Standard | 200V | 3A | 1 | 3A | 1μA @ 200V | 1.5V @ 9A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||
| LX5512BLQ | Microsemi |
Min: 1 Mult: 1 |
download | RoHS Compliant | /files/microsemi-lx5512blq-datasheets-7677.pdf | 16 | Single | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JAN1N3611 | Microsemi |
Min: 1 Mult: 1 |
download | Military, MIL-PRF-19500/228 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -55°C | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n3611-datasheets-7844.pdf | A, Axial | Contains Lead | 2 | 8 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | HIGH RELIABILITY | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500 | WIRE | 2 | Single | 1 | Qualified | 1.1V | ISOLATED | 38 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1μA | 200V | 30A | Standard | 200V | 1A | 1A | 100μA @ 300V | 1.1V @ 1A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||
| JANTX1N5621US/TR | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Tape and Reel | RoHS non-compliant | /files/microsemi-jantx1n5615ustr-datasheets-9139.pdf | 2 | Single | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JAN1N5419 | Microsemi |
Min: 1 Mult: 1 |
download | Military, MIL-PRF-19500/411 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n5420-datasheets-7853.pdf | B, Axial | 2 | 8 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | No | 8541.10.00.80 | MIL-19500/411L | WIRE | 2 | Single | 1 | Qualified | 1.5V | ISOLATED | FAST RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1μA | 500V | 80A | 250 ns | Standard | 500V | 3A | 1 | 3A | 1μA @ 500V | 1.5V @ 9A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||
| GRP-A-DATA-JANS1N5617 | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Tray | RoHS non-compliant | /files/microsemi-grpabcjantx1n5615-datasheets-6015.pdf | 2.16(Max) | 2 | Single | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N5420 | Microsemi |
Min: 1 Mult: 1 |
download | Military, MIL-PRF-19500/411 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | AVALANCHE | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n5420-datasheets-7853.pdf | B, Axial | Contains Lead | 2 | 8 Weeks | 2 | IN PRODUCTION (Last Updated: 3 weeks ago) | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/411L | WIRE | 2 | Single | 1 | Qualified | 1.5V | ISOLATED | FAST RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1μA | 600V | 80A | 400 ns | Standard | 600V | 3A | 1 | 3A | 1μA @ 600V | 1.5V @ 9A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||
| GRP-ABC-JAN1N5554US | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Bag | RoHS non-compliant | /files/microsemi-grpadatajan1n5553us-datasheets-2223.pdf | 2 | Single | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTXV1N6660 | Microsemi |
Min: 1 Mult: 1 |
download | Through Hole | 150°C | -65°C | SCHOTTKY | Non-RoHS Compliant | /files/microsemicorporation-jantx1n6660-datasheets-8454.pdf | TO-254 | 3 | 8 Weeks | no | EAR99 | Lead, Tin | 8541.10.00.80 | e0 | TIN LEAD | MIL-19500/608 | SINGLE | PIN/PEG | NOT SPECIFIED | 3 | Common Cathode | NOT SPECIFIED | 2 | Qualified | S-XSFM-P3 | 15A | 1V | ISOLATED | POWER | SILICON | 45V | 300A | RECTIFIER DIODE | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N5617US/TR | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Tape and Reel | RoHS non-compliant | /files/microsemi-jantx1n5615ustr-datasheets-9139.pdf | 2 | Single | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N5622US | Microsemi |
Min: 1 Mult: 1 |
download | Military, MIL-PRF-19500/427 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 200°C | -65°C | AVALANCHE | Non-RoHS Compliant | /files/microsemicorporation-1n5618us-datasheets-0738.pdf | SQ-MELF, A | 2 | 12 Weeks | 2 | IN PRODUCTION (Last Updated: 4 weeks ago) | no | EAR99 | HIGH RELIABILITY | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | END | WRAP AROUND | 2 | Single | 1 | Qualified | 1.3V | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 500nA | 100V | 30A | 2 μs | Standard | 1kV | 1A | 1A | 1000V | 500nA @ 1000V | 1.3V @ 3A | -65°C~200°C | ||||||||||||||||||||||||||||||||||||||||||
| S43140 | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Tray | RoHS non-compliant | /files/microsemi-s43100ts-datasheets-5381.pdf | 2 | Single | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JAN1N457 | Microsemi |
Min: 1 Mult: 1 |
download | Military, MIL-PRF-19500/193 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 150°C | -65°C | Non-RoHS Compliant | /files/microsemicorporation-1n458a-datasheets-1107.pdf | DO-204AH, DO-35, Axial | 2 | 8 Weeks | 2 | no | EAR99 | No | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/193D | WIRE | 2 | Single | 1 | Qualified | 225mA | 1V | ISOLATED | Small Signal =< 200mA (Io), Any Speed | SILICON | 1μA | 70V | 1A | Standard | 0.075A | 25nA @ 70V | 1V @ 100mA | 150mA | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||
| AD110 | Microsemi |
Min: 1 Mult: 1 |
download | RoHS non-compliant | /files/microsemi-ad110-datasheets-6706.pdf | 9.4(Max) | 3 |
