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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Type | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Frequency | Height Seated (Max) | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Diameter | Package / Case | Capacitance | Length | Height | Width | Operating Supply Voltage | Lead Free | Number of Terminations | Factory Lead Time | Weight | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Polarity | Reference Standard | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Pin Count | Temperature Grade | Operating Temperature (Max) | Supply Voltage-Max (Vsup) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Power Supplies | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Output Current | RAM Size | Forward Current | Forward Voltage | Max Surge Current | Configuration | Case Connection | Application | Number of Outputs | Natural Thermal Resistance | Speed | Diode Element Material | Power Dissipation-Max | Rep Pk Reverse Voltage-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | JEDEC-95 Code | Forward Voltage-Max | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Number of Registers | Reverse Voltage (DC) | Reverse Recovery Time-Max | Number of Inputs | Clock Frequency | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Programmable Logic Type | Number of Equivalent Gates | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 1N4148-1 | Microsemi |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1999 | /files/microsemicorporation-1n41481-datasheets-7410.pdf | DO-204AH, DO-35, Axial | 4pF | 1.91mm | Lead Free | 2 | 6 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | Lead, Tin | No | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/116L | WIRE | Single | 1 | Qualified | 175°C | 100mA | 1.2V | ISOLATED | Small Signal =< 200mA (Io), Any Speed | SILICON | 2A | 500nA | 75V | 2A | 75V | 5 ns | Standard | 75V | 200mA | 500nA @ 75V | 1.2V @ 100mA | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SG7905.2IG-883B | Microsemi |
Min: 1 Mult: 1 |
Through Hole | Non-RoHS Compliant | OBSOLETE (Last Updated: 1 month ago) | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| UES1303 | Microsemi |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Bulk | Not Applicable | 175°C | -55°C | Non-RoHS Compliant | 1996 | /files/microsemicorporation-ues1302-datasheets-5997.pdf | B, Axial | 2 | 8 Weeks | 2 | IN PRODUCTION (Last Updated: 3 weeks ago) | no | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | WIRE | Single | 1 | 6A | 925mV | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 150V | 125A | 30 ns | Standard | 150V | 6A | 1 | 6A | 5μA @ 150V | 925mV @ 6A | 175°C Max | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| M1A3PE1500-FFG484 | Microsemi |
Min: 1 Mult: 1 |
3 (168 Hours) | 70°C | 0°C | CMOS | 2.44mm | RoHS Compliant | FBGA | 23mm | 23mm | 1.5V | 484 | No | 8542.39.00.01 | e0 | TIN LEAD | YES | BOTTOM | BALL | 225 | 1.5V | 1mm | COMMERCIAL | 1.575V | 30 | Field Programmable Gate Arrays | 1.5/3.3V | S-PBGA-B484 | 33.8kB | 280 | 38400 | 280 | 350MHz | FIELD PROGRAMMABLE GATE ARRAY | 1500000 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N5806US | Microsemi |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | AVALANCHE | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n5804us-datasheets-2472.pdf | SQ-MELF, A | 25pF | 2.62mm | Contains Lead | 2 | 7 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | HIGH RELIABILITY | Lead, Tin | Yes | not_compliant | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) - with Nickel (Ni) barrier | END | WRAP AROUND | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | 175°C | 1A | 975mV | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 35A | 1μA | 150V | 35A | 25 ns | Standard | 150V | 1A | 1A | 25pF @ 10V 1MHz | 1μA @ 150V | 875mV @ 1A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| LX5551LQ-TR | Microsemi |
Min: 1 Mult: 1 |
Tape & Reel (TR) | 2.5GHz | RoHS Compliant | VQFN | Lead Free | IN PRODUCTION (Last Updated: 1 month ago) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N5615 | Microsemi |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | AVALANCHE | Non-RoHS Compliant | 1997 | /files/microsemicorporation-jan1n5617-datasheets-5896.pdf | A, Axial | Contains Lead | 2 | 7 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | HIGH RELIABILITY, METALLURGICALLY BONDED | Yes | not_compliant | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | WIRE | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Not Qualified | 1.6V | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500nA | 200V | 30A | 150 ns | Standard | 200V | 1A | 1A | 45pF @ 12V 1MHz | 500nA @ 200V | 1.6V @ 3A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GRP-ABC-JANTX1N5618US | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Bag | RoHS non-compliant | /files/microsemi-grpbdatajans1n5616us-datasheets-2028.pdf | 2 | Single | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT30DQ100KG | Microsemi |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | RoHS Compliant | 1997 | /files/microsemicorporation-apt30dq100kg-datasheets-4693.pdf | 1kV | 30A | TO-220-2 | Lead Free | 2 | 27 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | yes | EAR99 | No | 8541.10.00.80 | e3 | PURE MATTE TIN | 3 | Single | 1 | Rectifier Diodes | R-PSFM-T2 | 30A | 30A | 3V | CATHODE | ULTRA FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 1kV | 150A | TO-220AC | 295 ns | Standard | 1kV | 30A | 1 | 1000V | 100μA @ 1000V | 3V @ 30A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DATA1N6642JANS | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Tray | RoHS non-compliant | /files/microsemi-data1n6642jans-datasheets-6025.pdf | 1.91(Max) | 2 | Single | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT60S20SG | Microsemi |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -55°C | RoHS Compliant | 1997 | /files/microsemicorporation-apt60s20bg-datasheets-5782.pdf | 200V | 75A | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 16.05mm | 5.08mm | 13.99mm | Lead Free | 2 | 26 Weeks | 260.39037mg | 3 | IN PRODUCTION (Last Updated: 3 weeks ago) | yes | EAR99 | No | 8541.10.00.80 | e3 | PURE MATTE TIN | Standard | GULL WING | 245 | 3 | Single | 30 | 1 | Rectifier Diodes | R-PSSO-G2 | 75A | 75A | 900mV | 600A | CATHODE | HIGH VOLTAGE ULTRA FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1mA | 200V | 600A | 55 ns | 55 ns | Schottky | 200V | 75A | 1 | 200V | 1mA @ 200V | 900mV @ 60A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||
| GRP-B-DATA-JAN1N3611 | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Bag | RoHS non-compliant | /files/microsemi-grpbdatajan1n3611-datasheets-4721.pdf | 2.16(Max) | 2 | Single | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N4944 | Microsemi |
Min: 1 Mult: 1 |
download | Military, MIL-PRF-19500/359 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n4946-datasheets-5775.pdf | A, Axial | 2 | 12 Weeks | 2 | IN PRODUCTION (Last Updated: 3 weeks ago) | EAR99 | METALLURGICALLY BONDED | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/359F | WIRE | 2 | Single | 1 | Qualified | 1.3V | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1μA | 400V | 15A | 150 ns | Standard | 400V | 1A | 1A | 1μA @ 400V | 1.3V @ 1A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GRP-ABC-JAN1N4148UR-1 | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Bag | RoHS non-compliant | /files/microsemi-grpabcjan1n4148ur1-datasheets-4537.pdf | 1.7(Max) | 2 | Single | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT15D120BG | Microsemi |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | RoHS Compliant | 1997 | /files/microsemicorporation-apt15d120bg-datasheets-6334.pdf | TO-247-2 | 2 | 25 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT, LOW NOISE, SNUBBER DIODE | 8541.10.00.80 | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T2 | 2.5V | CATHODE | ULTRA FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 110A | 260 ns | Standard | 1.2kV | 15A | 1 | 1200V | 250μA @ 1200V | 2.5V @ 15A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FST6440 | Microsemi |
Min: 1 Mult: 1 |
download | Schottky Diode | RoHS Compliant | /files/microsemi-fst6440-datasheets-4673.pdf | 4 | Dual Common Cathode | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JAN1N3613 | Microsemi |
Min: 1 Mult: 1 |
download | Military, MIL-PRF-19500/228 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -55°C | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n3611-datasheets-7844.pdf | A, Axial | 2 | 8 Weeks | 2 | IN PRODUCTION (Last Updated: 2 weeks ago) | no | EAR99 | HIGH RELIABILITY | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500 | WIRE | 2 | Single | 1 | Qualified | 1.1V | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1μA | 600V | 30A | DO-41 | Standard | 600V | 1A | 1A | 100μA @ 300V | 1.1V @ 1A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GRP-A-DATA-JANTX1N6639US | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | RoHS non-compliant | /files/microsemi-grpdatajans1n6640us-datasheets-7832.pdf | 2 | Single | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N6643 | Microsemi |
Min: 1 Mult: 1 |
download | Military, MIL-PRF-19500/578 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | /files/microsemicorporation-jans1n6642-datasheets-6195.pdf | Axial | 2 | 8 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | METALLURGICALLY BONDED | No | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/578E | WIRE | 2 | Single | 1 | Qualified | 1.2V | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 0.75W | 50V | 500nA | 75V | 2.5A | DO-35 | 6 ns | Standard | 0.3A | 5pF @ 0V 1MHz | 125V | 50nA @ 20V | 1.2V @ 100mA | 300mA | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GRP-ABC-JAN1N4150UR-1 | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Bag | RoHS non-compliant | /files/microsemi-1n4150ur1jantxv-datasheets-9164.pdf | 1.7(Max) | 2 | Single | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JAN1N5711UR-1 | Microsemi |
Min: 1 Mult: 1 |
download | Military, MIL-PRF-19500/444 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | Non-RoHS Compliant | /files/microsemicorporation-jantx1n5711ur1-datasheets-6369.pdf | DO-213AA | 2 | 11 Weeks | 2 | IN PRODUCTION (Last Updated: 3 weeks ago) | no | EAR99 | METALLURGICALLY BONDED | No | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/444 | END | WRAP AROUND | 2 | Single | 1 | Qualified | 33mA | 1V | ISOLATED | Small Signal =< 200mA (Io), Any Speed | SILICON | 70V | Schottky | 0.033A | 2pF @ 0V 1MHz | 200nA @ 50V | 1V @ 15mA | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANS DATA-JANS1N3595US | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Waffle | RoHS non-compliant | /files/microsemi-jansdatajans1n3595us-datasheets-4185.pdf | 2 | Single | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| UES806 | Microsemi |
Min: 1 Mult: 1 |
download | Stud | Not Applicable | 150°C | -55°C | Non-RoHS Compliant | 1997 | /files/microsemicorporation-ues805-datasheets-0550.pdf | 1 | 8 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | No | 8541.10.00.80 | e0 | TIN LEAD | UPPER | SOLDER LUG | 2 | Single | 1 | Rectifier Diodes | O-MUPM-D1 | 50A | 1.25V | CATHODE | EFFICIENCY | SILICON | 70μA | 400V | 600A | 50 ns | RECTIFIER DIODE | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ID102 | Microsemi |
Min: 1 Mult: 1 |
RoHS non-compliant | /files/microsemi-id102-datasheets-9855.pdf | 5.84(Max) | 3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N6621US | Microsemi |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | AVALANCHE | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n6622us-datasheets-9253.pdf | SQ-MELF, A | Contains Lead | 2 | 17 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | HIGH RELIABILITY | Lead, Tin | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500 | END | WRAP AROUND | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Qualified | 1.2A | 1.6V | ISOLATED | ULTRA FAST RECOVERY | 13 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 440V | 20A | 0.5μA | 30 ns | Standard | 440V | 1.2A | 1 | 10pF @ 10V 1MHz | 500nA @ 440V | 1.4V @ 1.2A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| S4380TS | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Tray | RoHS non-compliant | /files/microsemi-s43100ts-datasheets-5381.pdf | 2 | Single | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N1124A | Microsemi |
Min: 1 Mult: 1 |
download | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n1124a-datasheets-5647.pdf | 1 | 20 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | no | 8541.10.00.80 | e0 | TIN LEAD | MIL-19500/260G | NO | UPPER | SOLDER LUG | NOT SPECIFIED | 1 | 200°C | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | O-MUPM-D1 | SINGLE | CATHODE | POWER | SILICON | 200V | DO-203AA | 1.2V | RECTIFIER DIODE | 25A | 1 | 3.3A | 0.5μs | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GRP-B-DATA-JANTX1N5619 | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Bag | RoHS non-compliant | /files/microsemi-grpabcjantx1n5615-datasheets-6015.pdf | 2.16(Max) | 2 | Single | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N648-1 | Microsemi |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n6481-datasheets-9193.pdf | DO-204AH, DO-35, Axial | 2 | 8 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | METALLURGICALLY BONDED | Lead, Tin | 8541.10.00.70 | e0 | TIN LEAD | WIRE | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Not Qualified | 400mA | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 0.5W | 500V | Standard | 500V | 400mA | 0.4A | 50nA @ 500V | 1V @ 400mA | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT75DQ120SG | Microsemi |
Min: 1 Mult: 1 |
download | Switching Diode | Tube | RoHS Compliant | /files/microsemi-apt75dq120sg-datasheets-2849.pdf | 3 | Single |
