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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Frequency | Operating Mode | Height Seated (Max) | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Operating Supply Voltage | Lead Free | Number of Terminations | Factory Lead Time | Weight | Max Supply Voltage | Min Supply Voltage | Number of Pins | Interface | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Max Frequency | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Supply Voltage-Max (Vsup) | Supply Voltage-Min (Vsup) | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Power Supplies | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Number of I/O | Peripherals | Core Architecture | RAM Size | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | Architecture | DS Breakdown Voltage-Min | FET Technology | Number of Outputs | Speed | Power - Max | Power Dissipation-Max | JEDEC-95 Code | Number of Registers | Number of Inputs | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | Core Processor | Connectivity | Number of Logic Blocks (LABs) | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Programmable Logic Type | Primary Attributes | Number of Logic Cells | Flash Size | Number of Equivalent Gates | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| APTM20DUM05G | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | /files/microsemicorporation-aptm20dum05g-datasheets-9394.pdf | SP6 | 7 | 36 Weeks | 6 | IN PRODUCTION (Last Updated: 1 month ago) | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 1.136kW | UPPER | UNSPECIFIED | 7 | 2 | R-XUFM-X7 | 28 ns | 56ns | 99 ns | 81 ns | 317A | 30V | SILICON | ISOLATED | SWITCHING | 200V | METAL-OXIDE SEMICONDUCTOR | 1136W | 2 N-Channel (Dual) | 27400pF @ 25V | 6m Ω @ 158.5A, 10V | 5V @ 10mA | 448nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| M2S025-FG484I | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion®2 | -40°C~100°C TJ | Tray | 3 (168 Hours) | CMOS | 2.44mm | Non-RoHS Compliant | /files/microsemicorporation-m2s025vfg256i-datasheets-0685.pdf | 484-BGA | 23mm | 23mm | 484 | 6 Weeks | not_compliant | 8542.39.00.01 | e0 | Tin/Lead (Sn/Pb) | YES | BOTTOM | BALL | NOT SPECIFIED | 1.2V | 1mm | 1.26V | 1.14V | NOT SPECIFIED | Field Programmable Gate Arrays | 1.2V | Not Qualified | S-PBGA-B484 | 267 | DDR, PCIe, SERDES | 64KB | MCU, FPGA | 267 | 166MHz | 267 | ARM® Cortex®-M3 | CANbus, Ethernet, I2C, SPI, UART/USART, USB | FIELD PROGRAMMABLE GATE ARRAY | FPGA - 25K Logic Modules | 27696 | 256KB | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTM10HM05FG | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2012 | /files/microsemicorporation-aptm10hm05fg-datasheets-9478.pdf | SP6 | 12 | 36 Weeks | 12 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 780W | UPPER | UNSPECIFIED | 12 | 780W | 4 | 80 ns | 165ns | 135 ns | 280 ns | 278A | 30V | SILICON | ISOLATED | SWITCHING | 100V | 100V | METAL-OXIDE SEMICONDUCTOR | 1100A | 0.005Ohm | 3000 mJ | 4 N-Channel (H-Bridge) | 20000pF @ 25V | 5m Ω @ 125A, 10V | 4V @ 5mA | 700nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| M2S025T-FGG484I | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion®2 | -40°C~100°C TJ | Tray | 3 (168 Hours) | CMOS | 2.44mm | RoHS Compliant | 2014 | /files/microsemicorporation-m2s050tfgg484-datasheets-1246.pdf | 484-BGA | 23mm | 23mm | 484 | 10 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | 8542.39.00.01 | e3 | MATTE TIN | YES | BOTTOM | BALL | NOT SPECIFIED | 1.2V | 1mm | 1.26V | 1.14V | NOT SPECIFIED | Field Programmable Gate Arrays | 1.2V | Not Qualified | S-PBGA-B484 | 267 | DDR, PCIe, SERDES | 64KB | MCU, FPGA | 267 | 166MHz | 267 | ARM® Cortex®-M3 | CANbus, Ethernet, I2C, SPI, UART/USART, USB | FIELD PROGRAMMABLE GATE ARRAY | FPGA - 25K Logic Modules | 27696 | 256KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTMC120AM16CD3AG | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | RoHS Compliant | 1997 | /files/microsemicorporation-aptmc120am16cd3ag-datasheets-9529.pdf | D-3 Module | 22 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | EAR99 | 625W | 20ns | 131A | 1200V 1.2kV | 2 N-Channel (Half Bridge) | 4750pF @ 1000V | 20m Ω @ 100A, 20V | 2.2V @ 5mA (Typ) | 131A Tc | 246nC @ 20V | Silicon Carbide (SiC) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| M2S060T-FCS325I | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion®2 | -40°C~100°C TJ | Tray | 3 (168 Hours) | CMOS | 1.01mm | Non-RoHS Compliant | /files/microsemicorporation-m2s025vfg256i-datasheets-0685.pdf | 325-TFBGA, CSPBGA | 11mm | 11mm | Contains Lead | 325 | 10 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | LG-MIN, WD-MIN | not_compliant | 8542.39.00.01 | e0 | Tin/Lead (Sn/Pb) | YES | BOTTOM | BALL | NOT SPECIFIED | 1.2V | 0.5mm | 1.26V | 1.14V | NOT SPECIFIED | Field Programmable Gate Arrays | 1.2V | Not Qualified | S-PBGA-B325 | 200 | DDR, PCIe, SERDES | 64KB | MCU, FPGA | 200 | 166MHz | 200 | ARM® Cortex®-M3 | CANbus, Ethernet, I2C, SPI, UART/USART, USB | FIELD PROGRAMMABLE GATE ARRAY | FPGA - 60K Logic Modules | 56520 | 256KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTC60DSKM35T3G | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2006 | SP3 | 25 | 22 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 416W | UPPER | UNSPECIFIED | 25 | 416W | 2 | FET General Purpose Power | 21 ns | 30ns | 84 ns | 283 ns | 72A | 20V | SILICON | ISOLATED | SWITCHING | 600V | 600V | METAL-OXIDE SEMICONDUCTOR | 1800 mJ | 2 N-Channel (Dual) | 14000pF @ 25V | 35m Ω @ 72A, 10V | 3.9V @ 5.4mA | 518nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| M2S025-1VFG256 | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion®2 | 0°C~85°C TJ | Tray | 3 (168 Hours) | CMOS | 1.56mm | RoHS Compliant | /files/microsemicorporation-m2s025vfg256i-datasheets-0685.pdf | 256-LBGA | 14mm | 14mm | 256 | 10 Weeks | LG-MIN, WD-MIN | 8542.39.00.01 | e3 | MATTE TIN | YES | BOTTOM | BALL | NOT SPECIFIED | 1.2V | 0.8mm | 1.26V | 1.14V | NOT SPECIFIED | Field Programmable Gate Arrays | 1.2V | Not Qualified | S-PBGA-B256 | 138 | DDR, PCIe, SERDES | 64KB | MCU, FPGA | 138 | 166MHz | 138 | ARM® Cortex®-M3 | CANbus, Ethernet, I2C, SPI, UART/USART, USB | FIELD PROGRAMMABLE GATE ARRAY | FPGA - 25K Logic Modules | 27696 | 256KB | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTM120H57FTG | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2016 | /files/microsemicorporation-aptm120h57ftg-datasheets-5062.pdf | SP4 | 14 | 4 | AVALANCHE RATED | unknown | e1 | TIN SILVER COPPER | 390W | UPPER | UNSPECIFIED | NOT SPECIFIED | 14 | NOT SPECIFIED | 390W | 4 | FET General Purpose Power | Not Qualified | 17A | 30V | SILICON | ISOLATED | SWITCHING | 1200V 1.2kV | 1200V | METAL-OXIDE SEMICONDUCTOR | 68A | 3000 mJ | 4 N-Channel (H-Bridge) | 5155pF @ 25V | 684m Ω @ 8.5A, 10V | 5V @ 2.5mA | 187nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| M2S050-FCS325I | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion®2 | -40°C~100°C TJ | Tray | 3 (168 Hours) | CMOS | 1.01mm | Non-RoHS Compliant | 2015 | /files/microsemicorporation-m2s025vfg256i-datasheets-0685.pdf | 325-TFBGA, CSPBGA | 11mm | 11mm | 325 | 10 Weeks | IN PRODUCTION (Last Updated: 2 weeks ago) | LG-MIN, WD-MIN | not_compliant | 8542.39.00.01 | e0 | Tin/Lead (Sn/Pb) | YES | BOTTOM | BALL | NOT SPECIFIED | 1.2V | 0.5mm | 1.26V | 1.14V | NOT SPECIFIED | Field Programmable Gate Arrays | 1.2V | Not Qualified | S-PBGA-B325 | 200 | DDR, PCIe, SERDES | 64KB | MCU, FPGA | 200 | 166MHz | 200 | ARM® Cortex®-M3 | CANbus, Ethernet, I2C, SPI, UART/USART, USB | FIELD PROGRAMMABLE GATE ARRAY | FPGA - 50K Logic Modules | 56340 | 256KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTM50DHM65TG | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2016 | /files/microsemicorporation-aptm50dhm65tg-datasheets-5107.pdf | SP4 | 14 | 4 | AVALANCHE RATED | unknown | e1 | TIN SILVER COPPER | 390W | UPPER | UNSPECIFIED | NOT SPECIFIED | 14 | NOT SPECIFIED | 390W | 2 | Not Qualified | 51A | 30V | SILICON | ISOLATED | SWITCHING | 500V | 500V | METAL-OXIDE SEMICONDUCTOR | 0.078Ohm | 3000 mJ | 2 N-Channel (Dual) Asymmetrical | 7000pF @ 25V | 78m Ω @ 25.5A, 10V | 5V @ 2.5mA | 140nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| M2S060TS-FCSG325I | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion®2 | -40°C~100°C TJ | Tray | 3 (168 Hours) | CMOS | 1.01mm | RoHS Compliant | 2015 | /files/microsemicorporation-m2s025vfg256i-datasheets-0685.pdf | 325-TFBGA, CSPBGA | 11mm | 11mm | 325 | 10 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | LG-MIN, WD-MIN | 8542.39.00.01 | e3 | MATTE TIN | YES | BOTTOM | BALL | NOT SPECIFIED | 1.2V | 0.5mm | 1.26V | 1.14V | NOT SPECIFIED | Field Programmable Gate Arrays | 1.2V | Not Qualified | S-PBGA-B325 | 200 | DDR, PCIe, SERDES | 64KB | MCU, FPGA | 200 | 166MHz | 200 | ARM® Cortex®-M3 | CANbus, Ethernet, I2C, SPI, UART/USART, USB | FIELD PROGRAMMABLE GATE ARRAY | FPGA - 60K Logic Modules | 56520 | 256KB | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTM50DHM75TG | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2016 | /files/microsemicorporation-aptm50dhm75tg-datasheets-5190.pdf | SP4 | 14 | 4 | AVALANCHE RATED | unknown | e1 | TIN SILVER COPPER | 357W | UPPER | UNSPECIFIED | NOT SPECIFIED | 14 | NOT SPECIFIED | 357W | 2 | FET General Purpose Power | Not Qualified | 46A | 30V | SILICON | ISOLATED | SWITCHING | 500V | 500V | METAL-OXIDE SEMICONDUCTOR | 0.09Ohm | 2 N-Channel (Dual) Asymmetrical | 5600pF @ 25V | 90m Ω @ 23A, 10V | 5V @ 2.5mA | 123nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| M2S025TS-VF400I | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion®2 | -40°C~100°C TJ | Tray | 3 (168 Hours) | CMOS | 1.51mm | Non-RoHS Compliant | 2015 | /files/microsemicorporation-m2s025vfg256i-datasheets-0685.pdf | 400-LFBGA | 17mm | 17mm | 400 | 10 Weeks | IN PRODUCTION (Last Updated: 2 weeks ago) | not_compliant | 8542.39.00.01 | e0 | Tin/Lead (Sn/Pb) | YES | BOTTOM | BALL | NOT SPECIFIED | 1.2V | 0.8mm | 1.26V | 1.14V | NOT SPECIFIED | Field Programmable Gate Arrays | 1.2V | Not Qualified | S-PBGA-B400 | 207 | DDR, PCIe, SERDES | 64KB | MCU, FPGA | 207 | 166MHz | 207 | ARM® Cortex®-M3 | CANbus, Ethernet, I2C, SPI, UART/USART, USB | FIELD PROGRAMMABLE GATE ARRAY | FPGA - 25K Logic Modules | 27696 | 256KB | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTM60A11FT1G | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | 150°C | -40°C | RoHS Compliant | 2007 | /files/microsemicorporation-aptm60a11ft1g-datasheets-0403.pdf | SP1 | 36 Weeks | 1 | No | 390W | 390W | 2 | SP1 | 10.552nF | 75 ns | 85ns | 70 ns | 225 ns | 40A | 30V | 600V | 390W | 2 N-Channel (Half Bridge) | 10552pF @ 25V | 132mOhm @ 33A, 10V | 5V @ 2.5mA | 40A | 330nC @ 10V | Standard | 132 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| M2S060T-FCSG325 | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion®2 | 0°C~85°C TJ | Tray | 3 (168 Hours) | CMOS | 1.01mm | RoHS Compliant | 2015 | /files/microsemicorporation-m2s025vfg256i-datasheets-0685.pdf | 325-TFBGA, CSPBGA | 11mm | 11mm | 325 | 10 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | LG-MIN, WD-MIN | 8542.39.00.01 | e3 | MATTE TIN | YES | BOTTOM | BALL | NOT SPECIFIED | 1.2V | 0.5mm | 1.26V | 1.14V | NOT SPECIFIED | Field Programmable Gate Arrays | 1.2V | Not Qualified | S-PBGA-B325 | 200 | DDR, PCIe, SERDES | 64KB | MCU, FPGA | 200 | 166MHz | 200 | ARM® Cortex®-M3 | CANbus, Ethernet, I2C, SPI, UART/USART, USB | FIELD PROGRAMMABLE GATE ARRAY | FPGA - 60K Logic Modules | 56520 | 256KB | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTC80H29SCTG | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | /files/microsemicorporation-aptc80h29sctg-datasheets-0457.pdf | SP4 | 14 | 4 | IN PRODUCTION (Last Updated: 1 month ago) | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 156W | UPPER | UNSPECIFIED | 14 | 156W | 4 | 10 ns | 13ns | 35 ns | 83 ns | 15A | 30V | SILICON | ISOLATED | SWITCHING | 800V | 800V | METAL-OXIDE SEMICONDUCTOR | 60A | 0.29Ohm | 670 mJ | 4 N-Channel (H-Bridge) | 2254pF @ 25V | 290m Ω @ 7.5A, 10V | 3.9V @ 1mA | 91nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| A2F200M3F-PQ208 | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion® | 0°C~85°C TJ | Tray | 3 (168 Hours) | 85°C | 0°C | 80MHz | Non-RoHS Compliant | 2015 | /files/microsemicorporation-a2f500m3gfgg484i-datasheets-0641.pdf | 208-BFQFP | 1.5V | 2 Weeks | 1.575V | 1.425V | 208 | EBI/EMI, Ethernet, I2C, SPI, UART, USART | No | 100MHz | A2F200 | 208-PQFP (28x28) | MCU - 22, FPGA - 66 | DMA, POR, WDT | ARM | 64KB | MCU, FPGA | 80MHz | 4608 | ARM® Cortex®-M3 | EBI/EMI, Ethernet, I2C, SPI, UART/USART | 8 | ProASIC®3 FPGA, 200K Gates, 4608 D-Flip-Flops | 256KB | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTC60HM45T1G | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw, Through Hole | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2012 | /files/microsemicorporation-aptc60hm45t1g-datasheets-0493.pdf | SP1 | 12 | 36 Weeks | 1 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 250W | UPPER | 12 | 250W | 4 | FET General Purpose Power | 21 ns | 30ns | 45 ns | 100 ns | 49A | 20V | SILICON | SWITCHING | 600V | 600V | METAL-OXIDE SEMICONDUCTOR | 4 N-Channel (H-Bridge) | 7200pF @ 25V | 45m Ω @ 24.5A, 10V | 3.9V @ 3mA | 150nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| A2F200M3F-PQ208I | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion® | -40°C~100°C TJ | Tray | 3 (168 Hours) | CMOS | 80MHz | 4.1mm | Non-RoHS Compliant | 2015 | /files/microsemicorporation-a2f500m3gfgg484i-datasheets-0641.pdf | 208-BFQFP | 208 | 12 Weeks | 208 | EBI/EMI, Ethernet, I2C, SPI, UART, USART | e0 | Tin/Lead (Sn/Pb) | YES | QUAD | GULL WING | 225 | 1.5V | 0.5mm | A2F200 | 1.575V | 1.425V | 20 | Field Programmable Gate Arrays | Not Qualified | MCU - 22, FPGA - 66 | DMA, POR, WDT | ARM | 64KB | MCU, FPGA | 66 | ARM® Cortex®-M3 | EBI/EMI, Ethernet, I2C, SPI, UART/USART | 8 | FIELD PROGRAMMABLE GATE ARRAY | ProASIC®3 FPGA, 200K Gates, 4608 D-Flip-Flops | 256KB | 200000 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTC60HM45SCTG | Microsemi |
Min: 1 Mult: 1 |
download | CoolMOS™ | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 1997 | /files/microsemicorporation-aptc60hm45sctg-datasheets-0623.pdf | SP4 | 14 | 36 Weeks | 4 | IN PRODUCTION (Last Updated: 2 weeks ago) | EAR99 | AVALANCHE RATED, ULTRA-LOW RESISTANCE | 250W | UPPER | UNSPECIFIED | 14 | 250W | 4 | Not Qualified | 21 ns | 30ns | 45 ns | 100 ns | 49A | 20V | SILICON | ISOLATED | SWITCHING | 600V | 600V | METAL-OXIDE SEMICONDUCTOR | 130A | 1900 mJ | 4 N-Channel (H-Bridge) | 7200pF @ 25V | 45m Ω @ 22.5A, 10V | 3.9V @ 3mA | 150nC @ 10V | Super Junction | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| M2S050S-1VF400I | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion®2 | -40°C~100°C TJ | Tray | 3 (168 Hours) | 100°C | -40°C | 166MHz | Non-RoHS Compliant | 2016 | /files/microsemicorporation-m2s005svfg256i-datasheets-1572.pdf | 400-LFBGA | 400 | CAN, Ethernet, I2C, SPI, UART, USART, USB | M2S050S | 400-VFBGA (17x17) | 207 | DDR, PCIe, SERDES | ARM | 64KB | MCU, FPGA | 166MHz | ARM® Cortex®-M3 | CANbus, Ethernet, I2C, SPI, UART/USART, USB | FPGA - 50K Logic Modules | 256KB | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTM20DHM16T3G | Microsemi |
Min: 1 Mult: 1 |
download | POWER MOS 7® | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | RoHS Compliant | 2012 | SP3 | 22 Weeks | 3 | EAR99 | No | 390W | 390W | 2 | FET General Purpose Power | 32 ns | 64ns | 116 ns | 88 ns | 104A | 30V | 200V | METAL-OXIDE SEMICONDUCTOR | 2 N-Channel (Dual) Asymmetrical | 7220pF @ 25V | 19m Ω @ 52A, 10V | 5V @ 2.5mA | 140nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| M2S100-1FC1152I | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion®2 | -40°C~100°C TJ | Tray | 3 (168 Hours) | CMOS | 166MHz | 2.9mm | Non-RoHS Compliant | 2009 | /files/microsemicorporation-m2s005svfg256i-datasheets-1572.pdf | 1152-BBGA, FCBGA | 35mm | 35mm | CAN, Ethernet, I2C, SPI, UART, USART, USB | e0 | TIN LEAD | YES | BOTTOM | BALL | NOT SPECIFIED | 1.2V | 1mm | M2S100 | 1.26V | 1.14V | NOT SPECIFIED | Field Programmable Gate Arrays | 1.2V | Not Qualified | S-PBGA-B1152 | 574 | DDR, PCIe, SERDES | ARM | 64KB | MCU, FPGA | 574 | 574 | ARM® Cortex®-M3 | CANbus, Ethernet, I2C, SPI, UART/USART, USB | FIELD PROGRAMMABLE GATE ARRAY | FPGA - 100K Logic Modules | 99512 | 512KB | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JAN2N7334 | Microsemi |
Min: 1 Mult: 1 |
download | Military, MIL-PRF-19500/597 | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | Non-RoHS Compliant | 1997 | /files/microsemicorporation-jantxv2n7334-datasheets-5954.pdf | 14-DIP (0.300, 7.62mm) | 1.4W | FET General Purpose Power | Qualified | 1A | 100V | METAL-OXIDE SEMICONDUCTOR | 1.4W | 1A | 4 N-Channel | 700m Ω @ 600mA, 10V | 4V @ 250μA | 60nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| M2S090S-1FGG676I | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion®2 | -40°C~100°C TJ | Tray | 3 (168 Hours) | 100°C | -40°C | 166MHz | RoHS Compliant | /files/microsemicorporation-m2s005svfg256i-datasheets-1572.pdf | 676-BGA | CAN, Ethernet, I2C, SPI, UART, USART, USB | M2S090S | 676-FBGA (27x27) | 425 | DDR, PCIe, SERDES | ARM | 64KB | MCU, FPGA | 166MHz | ARM® Cortex®-M3 | CANbus, Ethernet, I2C, SPI, UART/USART, USB | FPGA - 90K Logic Modules | 512KB | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT51M50J | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | /files/microsemicorporation-apt51m50j-datasheets-3887.pdf | 500V | 51A | SOT-227-4, miniBLOC | 38.2mm | 9.6mm | 25.4mm | Lead Free | 4 | 19 Weeks | 30.000004g | 4 | IN PRODUCTION (Last Updated: 1 month ago) | yes | AVALANCHE RATED, UL RECOGNIZED | No | UPPER | UNSPECIFIED | 4 | 1 | Single | 480W | 1 | 45 ns | 55ns | 39 ns | 120 ns | 51A | 30V | SILICON | ISOLATED | SWITCHING | 480W Tc | 230A | 0.075Ohm | 500V | N-Channel | 11600pF @ 25V | 75m Ω @ 37A, 10V | 5V @ 2.5mA | 51A Tc | 290nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| M2S010-TQ144 | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion®2 | 0°C~85°C TJ | Tray | 3 (168 Hours) | CMOS | 1.6mm | Non-RoHS Compliant | 2015 | /files/microsemicorporation-m2s025vfg256i-datasheets-0685.pdf | 144-LQFP | 20mm | 20mm | 144 | 8 Weeks | OBSOLETE (Last Updated: 1 month ago) | not_compliant | 8542.39.00.01 | e0 | Tin/Lead (Sn/Pb) | YES | QUAD | GULL WING | NOT SPECIFIED | 1.2V | 0.5mm | 1.26V | 1.14V | NOT SPECIFIED | Field Programmable Gate Arrays | 1.2V | Not Qualified | S-PQFP-G144 | 84 | DDR, PCIe, SERDES | 64KB | MCU, FPGA | 84 | 166MHz | 84 | ARM® Cortex®-M3 | CANbus, Ethernet, I2C, SPI, UART/USART, USB | FIELD PROGRAMMABLE GATE ARRAY | FPGA - 10K Logic Modules | 256KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT38F80B2 | Microsemi |
Min: 1 Mult: 1 |
download | POWER MOS 8™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | /files/microsemicorporation-apt38f80l-datasheets-1483.pdf | TO-247-3 Variant | Lead Free | 3 | 33 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | yes | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | No | Pure Matte Tin (Sn) | SINGLE | 3 | 1.04kW | 1 | FET General Purpose Power | R-PSIP-T3 | 46 ns | 65ns | 60 ns | 200 ns | 41A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 800V | 800V | 1040W Tc | TO-247AB | 0.24Ohm | N-Channel | 8070pF @ 25V | 240m Ω @ 20A, 10V | 5V @ 2.5mA | 41A Tc | 260nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| M2S050-1FG484 | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion®2 | 0°C~85°C TJ | Tray | 3 (168 Hours) | 85°C | 0°C | 166MHz | Non-RoHS Compliant | 2009 | /files/microsemicorporation-m2s005svfg256i-datasheets-1572.pdf | 484-BGA | 10 Weeks | CAN, Ethernet, I2C, SPI, UART, USART, USB | IN PRODUCTION (Last Updated: 1 month ago) | M2S050 | 484-FPBGA (23x23) | 267 | DDR, PCIe, SERDES | ARM | 64KB | MCU, FPGA | 166MHz | ARM® Cortex®-M3 | CANbus, Ethernet, I2C, SPI, UART/USART, USB | FPGA - 50K Logic Modules | 256KB |
