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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Frequency | Operating Supply Current | Operating Mode | Height Seated (Max) | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Operating Supply Voltage | Lead Free | Number of Terminations | Factory Lead Time | Weight | Max Supply Voltage | Min Supply Voltage | Number of Pins | Interface | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Max Frequency | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Supply Voltage-Max (Vsup) | Supply Voltage-Min (Vsup) | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Power Supplies | Qualification Status | JESD-30 Code | Supplier Device Package | Data Rate | Memory Size | Number of I/O | Peripherals | Core Architecture | RAM Size | Turn On Delay Time | Speed Grade | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | Architecture | DS Breakdown Voltage-Min | FET Technology | Number of Outputs | Speed | Power - Max | Power Dissipation-Max | JEDEC-95 Code | Number of Registers | Number of Inputs | Number of Gates | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | Core Processor | Connectivity | Number of Logic Elements/Cells | Number of Logic Blocks (LABs) | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Programmable Logic Type | Primary Attributes | Number of Logic Cells | Flash Size | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| M2S025TS-VFG256 | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion®2 | 0°C~85°C TJ | Tray | 3 (168 Hours) | CMOS | 1.56mm | RoHS Compliant | 2015 | /files/microsemicorporation-m2s025vfg256i-datasheets-0685.pdf | 256-LBGA | 14mm | 14mm | 256 | 10 Weeks | IN PRODUCTION (Last Updated: 2 weeks ago) | LG-MIN, WD-MIN | 8542.39.00.01 | e3 | MATTE TIN | YES | BOTTOM | BALL | NOT SPECIFIED | 1.2V | 0.8mm | 1.26V | 1.14V | NOT SPECIFIED | Field Programmable Gate Arrays | 1.2V | Not Qualified | S-PBGA-B256 | 138 | DDR, PCIe, SERDES | 64KB | MCU, FPGA | 138 | 166MHz | 138 | ARM® Cortex®-M3 | CANbus, Ethernet, I2C, SPI, UART/USART, USB | FIELD PROGRAMMABLE GATE ARRAY | FPGA - 25K Logic Modules | 27696 | 256KB | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTM50AM17FG | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2006 | /files/microsemicorporation-aptm50am17fg-datasheets-9517.pdf | SP6 | Lead Free | 7 | 36 Weeks | 6 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 1.25kW | UPPER | UNSPECIFIED | 7 | 1.25kW | 2 | R-XUFM-X7 | 21 ns | 38ns | 93 ns | 75 ns | 180A | 30V | SILICON | ISOLATED | SWITCHING | 500V | 500V | METAL-OXIDE SEMICONDUCTOR | 1250W | 0.017Ohm | 3000 mJ | 2 N-Channel (Half Bridge) | 28000pF @ 25V | 20m Ω @ 90A, 10V | 5V @ 10mA | 560nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| M2S025TS-VF256I | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion®2 | -40°C~100°C TJ | Tray | 3 (168 Hours) | 1.56mm | Non-RoHS Compliant | 2015 | /files/microsemicorporation-m2s025vfg256i-datasheets-0685.pdf | 256-LFBGA | 14mm | 14mm | 256 | 10 Weeks | IN PRODUCTION (Last Updated: 2 weeks ago) | no | LG-MIN, WD-MIN | not_compliant | 8542.39.00.01 | e0 | Tin/Lead (Sn/Pb) | YES | BOTTOM | BALL | NOT SPECIFIED | 1.2V | 0.8mm | 1.26V | 1.14V | NOT SPECIFIED | S-PBGA-B256 | 138 | DDR, PCIe, SERDES | 64KB | MCU, FPGA | 166MHz | ARM® Cortex®-M3 | CANbus, Ethernet, I2C, SPI, UART/USART, USB | FIELD PROGRAMMABLE GATE ARRAY | FPGA - 25K Logic Modules | 256KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTM100A13SCG | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | /files/microsemicorporation-aptm100a13scg-datasheets-9583.pdf | SP6 | Lead Free | 7 | 6 | IN PRODUCTION (Last Updated: 3 weeks ago) | yes | EAR99 | AVALANCHE RATED | e1 | TIN SILVER COPPER | 1.25kW | UPPER | UNSPECIFIED | NOT SPECIFIED | 7 | NOT SPECIFIED | 1.25kW | 2 | Not Qualified | R-XUFM-X7 | 9 ns | 24 ns | 50 ns | 65A | 30V | SILICON | ISOLATED | SWITCHING | 1000V 1kV | 1000V | METAL-OXIDE SEMICONDUCTOR | 1250W | 1300 mJ | 2 N-Channel (Half Bridge) | 15200pF @ 25V | 156m Ω @ 32.5A, 10V | 5V @ 6mA | 562nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| M2S050T-FCSG325 | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion®2 | 0°C~85°C TJ | Tray | 3 (168 Hours) | CMOS | 1.01mm | RoHS Compliant | 2015 | /files/microsemicorporation-m2s025vfg256i-datasheets-0685.pdf | 325-TFBGA, CSPBGA | 11mm | 11mm | 325 | 10 Weeks | IN PRODUCTION (Last Updated: 2 weeks ago) | LG-MIN, WD-MIN | 8542.39.00.01 | e3 | MATTE TIN | YES | BOTTOM | BALL | NOT SPECIFIED | 1.2V | 0.5mm | 1.26V | 1.14V | NOT SPECIFIED | Field Programmable Gate Arrays | 1.2V | Not Qualified | S-PBGA-B325 | 200 | DDR, PCIe, SERDES | 64KB | MCU, FPGA | 200 | 166MHz | 200 | ARM® Cortex®-M3 | CANbus, Ethernet, I2C, SPI, UART/USART, USB | FIELD PROGRAMMABLE GATE ARRAY | FPGA - 50K Logic Modules | 56340 | 256KB | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTC60AM70T1G | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2007 | /files/microsemicorporation-aptc60am70t1g-datasheets-5042.pdf | SP1 | 12 | 1 | AVALANCHE RATED | unknown | e1 | TIN SILVER COPPER | 250W | UPPER | THROUGH-HOLE | NOT SPECIFIED | 12 | NOT SPECIFIED | 250W | 2 | FET General Purpose Power | Not Qualified | 39A | 20V | SILICON | ISOLATED | SWITCHING | 600V | 600V | METAL-OXIDE SEMICONDUCTOR | 0.07Ohm | 2 N-Channel (Half Bridge) | 7000pF @ 25V | 70m Ω @ 39A, 10V | 3.9V @ 2.7mA | 259nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| M2S010TS-VFG256 | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion®2 | 0°C~85°C TJ | Tray | 3 (168 Hours) | CMOS | 1.56mm | RoHS Compliant | /files/microsemicorporation-m2s025vfg256i-datasheets-0685.pdf | 256-LBGA | 14mm | 14mm | 256 | 10 Weeks | LG-MIN, WD-MIN | 8542.39.00.01 | e3 | MATTE TIN | YES | BOTTOM | BALL | NOT SPECIFIED | 1.2V | 0.8mm | 1.26V | 1.14V | NOT SPECIFIED | Field Programmable Gate Arrays | 1.2V | Not Qualified | S-PBGA-B256 | 138 | DDR, PCIe, SERDES | 64KB | MCU, FPGA | 138 | 166MHz | 138 | ARM® Cortex®-M3 | CANbus, Ethernet, I2C, SPI, UART/USART, USB | FIELD PROGRAMMABLE GATE ARRAY | FPGA - 10K Logic Modules | 12084 | 256KB | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTM08TDUM04PG | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2016 | /files/microsemicorporation-aptm08tdum04pg-datasheets-5086.pdf | SP6 | 21 | 6 | EAR99 | AVALANCHE RATED | unknown | e1 | TIN SILVER COPPER | 138W | UPPER | UNSPECIFIED | NOT SPECIFIED | 21 | NOT SPECIFIED | 138W | 6 | Not Qualified | R-XUFM-X21 | 120A | 30V | SILICON | 3 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 75V | 75V | METAL-OXIDE SEMICONDUCTOR | 250A | 0.0045Ohm | 1500 mJ | 6 N-Channel (3-Phase Bridge) | 4530pF @ 25V | 4.5m Ω @ 60A, 10V | 4V @ 1mA | 153nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| M2S050TS-FCSG325 | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion®2 | 0°C~85°C TJ | Tray | 3 (168 Hours) | CMOS | 1.01mm | RoHS Compliant | 2015 | /files/microsemicorporation-m2s025vfg256i-datasheets-0685.pdf | 325-TFBGA, CSPBGA | 11mm | 11mm | 325 | 10 Weeks | IN PRODUCTION (Last Updated: 2 weeks ago) | LG-MIN, WD-MIN | 8542.39.00.01 | e3 | MATTE TIN | YES | BOTTOM | BALL | NOT SPECIFIED | 1.2V | 0.5mm | 1.26V | 1.14V | NOT SPECIFIED | Field Programmable Gate Arrays | 1.2V | Not Qualified | S-PBGA-B325 | 200 | DDR, PCIe, SERDES | 64KB | MCU, FPGA | 200 | 166MHz | 200 | ARM® Cortex®-M3 | CANbus, Ethernet, I2C, SPI, UART/USART, USB | FIELD PROGRAMMABLE GATE ARRAY | FPGA - 50K Logic Modules | 56340 | 256KB | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTM50DUM35TG | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2006 | /files/microsemicorporation-aptrg8a120g-datasheets-4026.pdf | SP4 | 12 | 22 Weeks | 4 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 781W | UPPER | UNSPECIFIED | 12 | 781W | 2 | 21 ns | 38ns | 93 ns | 75 ns | 99A | 30V | SILICON | ISOLATED | SWITCHING | 500V | 500V | METAL-OXIDE SEMICONDUCTOR | 396A | 0.039Ohm | 3000 mJ | 2 N-Channel (Dual) | 14000pF @ 25V | 39m Ω @ 49.5A, 10V | 5V @ 5mA | 280nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| M2S090-FCS325 | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion®2 | 0°C~85°C TJ | Tray | 3 (168 Hours) | CMOS | 1.16mm | Non-RoHS Compliant | 2015 | /files/microsemicorporation-m2s025vfg256i-datasheets-0685.pdf | 325-TFBGA, CSPBGA | 13.5mm | 11mm | 325 | 12 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | LG-MIN, WD-MIN | not_compliant | 8542.39.00.01 | e0 | Tin/Lead (Sn/Pb) | YES | BOTTOM | BALL | NOT SPECIFIED | 1.2V | 0.5mm | 1.26V | 1.14V | NOT SPECIFIED | Field Programmable Gate Arrays | 1.2V | Not Qualified | R-PBGA-B325 | 180 | DDR, PCIe, SERDES | 64KB | MCU, FPGA | 180 | 166MHz | 180 | ARM® Cortex®-M3 | CANbus, Ethernet, I2C, SPI, UART/USART, USB | FIELD PROGRAMMABLE GATE ARRAY | FPGA - 90K Logic Modules | 86316 | 512KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTM50DUM38TG | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2016 | /files/microsemicorporation-aptm50dum38tg-datasheets-5601.pdf | SP4 | 12 | 4 | AVALANCHE RATED | unknown | e1 | TIN SILVER COPPER | 694W | UPPER | UNSPECIFIED | NOT SPECIFIED | 12 | NOT SPECIFIED | 694W | 2 | FET General Purpose Power | Not Qualified | 90A | 30V | SILICON | ISOLATED | SWITCHING | 500V | 500V | METAL-OXIDE SEMICONDUCTOR | 360A | 2 N-Channel (Dual) | 11200pF @ 25V | 45m Ω @ 45A, 10V | 5V @ 5mA | 246nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| M2S060-FG676 | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion®2 | 0°C~85°C TJ | Tray | 3 (168 Hours) | CMOS | 2.44mm | Non-RoHS Compliant | 2015 | /files/microsemicorporation-m2s025vfg256i-datasheets-0685.pdf | 676-BGA | 27mm | 27mm | 676 | 11 Weeks | IN PRODUCTION (Last Updated: 2 weeks ago) | not_compliant | 8542.39.00.01 | e0 | Tin/Lead (Sn/Pb) | YES | BOTTOM | BALL | NOT SPECIFIED | 1.2V | 1mm | 1.26V | 1.14V | NOT SPECIFIED | Field Programmable Gate Arrays | 1.2V | Not Qualified | S-PBGA-B676 | 387 | DDR, PCIe, SERDES | 64KB | MCU, FPGA | 387 | 166MHz | 387 | ARM® Cortex®-M3 | CANbus, Ethernet, I2C, SPI, UART/USART, USB | FIELD PROGRAMMABLE GATE ARRAY | FPGA - 60K Logic Modules | 56520 | 256KB | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTM10DSKM09T3G | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2012 | /files/microsemicorporation-aptm10dskm09t3g-datasheets-0440.pdf | SP3 | 25 | 36 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 390W | UPPER | UNSPECIFIED | 25 | 390W | 2 | 35 ns | 70ns | 125 ns | 95 ns | 139A | 30V | SILICON | ISOLATED | SWITCHING | 100V | 100V | METAL-OXIDE SEMICONDUCTOR | 0.01Ohm | 2 N-Channel (Dual) | 9875pF @ 25V | 10m Ω @ 69.5A, 10V | 4V @ 2.5mA | 350nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| A2F200M3F-1FGG256 | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion® | Surface Mount | 0°C~85°C TJ | Tray | 3 (168 Hours) | 85°C | 0°C | 100MHz | 3mA | RoHS Compliant | 2013 | /files/microsemicorporation-a2f500m3gfgg484i-datasheets-0641.pdf | 256-LBGA | 1.5V | Lead Free | 8 Weeks | 1.575V | 1.425V | 256 | EBI/EMI, Ethernet, I2C, SPI, UART, USART | Copper, Silver, Tin | No | 120MHz | A2F200 | 256-FPBGA (17x17) | 400 kbps | 4.5kB | MCU - 25, FPGA - 66 | DMA, POR, WDT | ARM | 64KB | 1 | MCU, FPGA | 100MHz | 4608 | 200000 | ARM® Cortex®-M3 | EBI/EMI, Ethernet, I2C, SPI, UART/USART | 2500 | ProASIC®3 FPGA, 200K Gates, 4608 D-Flip-Flops | 256KB | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTC60DHM24T3G | Microsemi |
Min: 1 Mult: 1 |
download | CoolMOS™ | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Tray | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | /files/microsemicorporation-aptc60dhm24t3g-datasheets-0477.pdf | SP3 | 16 | 36 Weeks | 3 | IN PRODUCTION (Last Updated: 2 weeks ago) | EAR99 | AVALANCHE RATED, ULTRA-LOW RESISTANCE | No | 462W | UPPER | UNSPECIFIED | 25 | 2 | FET General Purpose Power | R-XUFM-X16 | 21 ns | 30ns | 45 ns | 100 ns | 95A | 20V | SILICON | COMPLEX | ISOLATED | SWITCHING | 600V | 600V | METAL-OXIDE SEMICONDUCTOR | 1900 mJ | 2 N-Channel (Dual) Asymmetrical | 14400pF @ 25V | 24m Ω @ 47.5A, 10V | 3.9V @ 5mA | 300nC @ 10V | Super Junction | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| A2F500M3G-FG256I | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion® | -40°C~100°C TJ | Tray | 3 (168 Hours) | CMOS | 80MHz | 2mA | 1.7mm | Non-RoHS Compliant | 2015 | /files/microsemicorporation-a2f500m3gfgg484i-datasheets-0641.pdf | 256-LBGA | 17mm | 17mm | 256 | 12 Weeks | 256 | EBI/EMI, Ethernet, I2C, SPI, UART, USART | 8542.39.00.01 | e0 | Tin/Lead (Sn/Pb) | YES | BOTTOM | BALL | 225 | 1.5V | 1mm | A2F500M3G | 1.575V | 1.425V | 20 | Field Programmable Gate Arrays | 1.51.82.53.3V | Not Qualified | MCU - 25, FPGA - 66 | DMA, POR, WDT | ARM | 64KB | MCU, FPGA | 66 | 500000 | ARM® Cortex®-M3 | EBI/EMI, Ethernet, I2C, SPI, UART/USART | 24 | FIELD PROGRAMMABLE GATE ARRAY | ProASIC®3 FPGA, 500K Gates, 11520 D-Flip-Flops | 512KB | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTM100A18FTG | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2006 | /files/microsemicorporation-aptm100a18ftg-datasheets-0522.pdf | SP4 | 12 | 36 Weeks | 4 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 780W | UPPER | UNSPECIFIED | 12 | 780W | 2 | 18 ns | 12ns | 40 ns | 155 ns | 43A | 30V | SILICON | ISOLATED | SWITCHING | 1000V 1kV | 1000V | METAL-OXIDE SEMICONDUCTOR | 3000 mJ | 2 N-Channel (Half Bridge) | 10400pF @ 25V | 210m Ω @ 21.5A, 10V | 5V @ 5mA | 372nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| A2F200M3F-CSG288I | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion® | Surface Mount | -40°C~100°C TJ | Tray | 3 (168 Hours) | 100°C | -40°C | 80MHz | RoHS Compliant | /files/microsemicorporation-a2f500m3gfgg484i-datasheets-0641.pdf | 288-TFBGA, CSPBGA | 1.5V | 1.575V | 1.425V | 288 | EBI/EMI, Ethernet, I2C, SPI, UART, USART | Copper, Silver, Tin | A2F200 | 288-CSP (11x11) | MCU - 31, FPGA - 78 | DMA, POR, WDT | ARM | 64KB | MCU, FPGA | 80MHz | ARM® Cortex®-M3 | EBI/EMI, Ethernet, I2C, SPI, UART/USART | ProASIC®3 FPGA, 200K Gates, 4608 D-Flip-Flops | 256KB | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTC60AM242G | Microsemi |
Min: 1 Mult: 1 |
download | CoolMOS™ | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | RoHS Compliant | 2012 | Module | 22 Weeks | 18 | EAR99 | 462W | 2 | FET General Purpose Power | 21 ns | 30ns | 45 ns | 100 ns | 95A | 20V | 600V | METAL-OXIDE SEMICONDUCTOR | 2 N-Channel (Half Bridge) | 14400pF @ 25V | 24m Ω @ 47.5A, 10V | 3.9V @ 5mA | 300nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| M2S100T-1FCG1152I | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion®2 | -40°C~100°C TJ | Tray | 3 (168 Hours) | CMOS | 166MHz | 2.9mm | RoHS Compliant | 2009 | /files/microsemicorporation-m2s005svfg256i-datasheets-1572.pdf | 1152-BBGA, FCBGA | 35mm | 35mm | CAN, Ethernet, I2C, SPI, UART, USART, USB | YES | BOTTOM | BALL | NOT SPECIFIED | 1.2V | 1mm | M2S100T | 1.26V | 1.14V | NOT SPECIFIED | Field Programmable Gate Arrays | 1.2V | Not Qualified | S-PBGA-B1152 | 574 | DDR, PCIe, SERDES | ARM | 64KB | MCU, FPGA | 574 | 574 | ARM® Cortex®-M3 | CANbus, Ethernet, I2C, SPI, UART/USART, USB | FIELD PROGRAMMABLE GATE ARRAY | FPGA - 100K Logic Modules | 99512 | 512KB | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTML502UM90R020T3AG | Microsemi |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2012 | SP3 | 14 | 22 Weeks | 3 | EAR99 | No | 568W | UNSPECIFIED | 32 | 568W | 2 | FET General Purpose Power | R-XDFM-X14 | 52A | 30V | SILICON | ISOLATED | SWITCHING | 500V | 500V | METAL-OXIDE SEMICONDUCTOR | 0.095Ohm | 2 N-Channel (Dual) | 7600pF @ 25V | 108m Ω @ 26A, 10V | 4V @ 2.5mA | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| M2S005-1TQ144I | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion®2 | -40°C~100°C TJ | Tray | 3 (168 Hours) | 1.6mm | Non-RoHS Compliant | 2015 | /files/microsemicorporation-m2s025vfg256i-datasheets-0685.pdf | 144-LQFP | 20mm | 20mm | 144 | OBSOLETE (Last Updated: 3 weeks ago) | no | not_compliant | 8542.39.00.01 | e0 | Tin/Lead (Sn/Pb) | YES | QUAD | GULL WING | NOT SPECIFIED | 1.2V | 0.5mm | 1.26V | 1.14V | NOT SPECIFIED | S-PQFP-G144 | 84 | DDR | 64KB | MCU, FPGA | 166MHz | ARM® Cortex®-M3 | CANbus, Ethernet, I2C, SPI, UART/USART, USB | FIELD PROGRAMMABLE GATE ARRAY | FPGA - 5K Logic Modules | 128KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT42F50B | Microsemi |
Min: 1 Mult: 1 |
download | POWER MOS 8™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | /files/microsemicorporation-apt42f50b-datasheets-2108.pdf | 500V | 42A | TO-247-3 | 21.46mm | 5.31mm | 16.26mm | Lead Free | 3 | 22 Weeks | 38.000013g | IN PRODUCTION (Last Updated: 1 month ago) | yes | AVALANCHE RATED, HIGH RELIABILITY | No | e1 | TIN SILVER COPPER | SINGLE | 3 | 625W | 1 | R-PSFM-T3 | 29 ns | 35ns | 26 ns | 80 ns | 42A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 625W Tc | 930 mJ | N-Channel | 6810pF @ 25V | 130m Ω @ 21A, 10V | 5V @ 1mA | 42A Tc | 170nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| M2S010-TQ144I | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion®2 | -40°C~100°C TJ | Tray | 3 (168 Hours) | CMOS | 1.6mm | Non-RoHS Compliant | 2015 | /files/microsemicorporation-m2s025vfg256i-datasheets-0685.pdf | 144-LQFP | 20mm | 20mm | 144 | 8 Weeks | OBSOLETE (Last Updated: 2 days ago) | not_compliant | 8542.39.00.01 | e0 | Tin/Lead (Sn/Pb) | YES | QUAD | GULL WING | NOT SPECIFIED | 1.2V | 0.5mm | 1.26V | 1.14V | NOT SPECIFIED | Field Programmable Gate Arrays | 1.2V | Not Qualified | S-PQFP-G144 | 84 | DDR, PCIe, SERDES | 64KB | MCU, FPGA | 84 | 166MHz | 84 | ARM® Cortex®-M3 | CANbus, Ethernet, I2C, SPI, UART/USART, USB | FIELD PROGRAMMABLE GATE ARRAY | FPGA - 10K Logic Modules | 256KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT20M11JVR | Microsemi |
Min: 1 Mult: 1 |
download | POWER MOS V® | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | /files/microsemicorporation-apt20m11jvr-datasheets-4497.pdf | 200V | 175A | SOT-227-4, miniBLOC | 38.2mm | 9.6mm | 25.4mm | Lead Free | 4 | 19 Weeks | 30.000004g | 4 | IN PRODUCTION (Last Updated: 3 weeks ago) | yes | EAR99 | HIGH VOLTAGE | No | UPPER | UNSPECIFIED | 4 | 1 | Single | 700W | 1 | 20 ns | 40ns | 10 ns | 75 ns | 175A | 30V | SILICON | ISOLATED | SWITCHING | 700W Tc | 700A | 3600 mJ | 200V | N-Channel | 21600pF @ 25V | 11m Ω @ 500mA, 10V | 4V @ 5mA | 175A Tc | 180nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| M2S010S-TQ144I | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion®2 | -40°C~100°C TJ | Tray | 3 (168 Hours) | Non-RoHS Compliant | /files/microsemicorporation-m2s005s1vfg400t2-datasheets-2817.pdf | 144-LQFP | OBSOLETE (Last Updated: 1 month ago) | 144-TQFP (20x20) | 84 | DDR, PCIe, SERDES | 64KB | MCU, FPGA | 166MHz | ARM® Cortex®-M3 | CANbus, Ethernet, I2C, SPI, UART/USART, USB | FPGA - 10K Logic Modules | 256KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT26F120B2 | Microsemi |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | /files/microsemicorporation-apt26f120b2-datasheets-1331.pdf | 1.2kV | 26A | TO-247-3 Variant | 21.46mm | 5.31mm | 16.26mm | Lead Free | 3 | 22 Weeks | 3 | yes | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | No | Pure Matte Tin (Sn) | SINGLE | 3 | 1 | FET General Purpose Power | 50 ns | 31ns | 48 ns | 170 ns | 27A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1200V | 1135W Tc | 0.58Ohm | 1.2kV | N-Channel | 9670pF @ 25V | 650m Ω @ 14A, 10V | 5V @ 2.5mA | 27A Tc | 300nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| M2S060-1VF400 | Microsemi |
Min: 1 Mult: 1 |
download | SmartFusion®2 | 0°C~85°C TJ | Tray | 3 (168 Hours) | CMOS | 1.51mm | Non-RoHS Compliant | 2015 | /files/microsemicorporation-m2s025vfg256i-datasheets-0685.pdf | 400-LFBGA | 17mm | 17mm | 400 | 10 Weeks | IN PRODUCTION (Last Updated: 2 weeks ago) | not_compliant | 8542.39.00.01 | e0 | Tin/Lead (Sn/Pb) | YES | BOTTOM | BALL | NOT SPECIFIED | 1.2V | 0.8mm | 1.26V | 1.14V | NOT SPECIFIED | Field Programmable Gate Arrays | 1.2V | Not Qualified | S-PBGA-B400 | 207 | DDR, PCIe, SERDES | 64KB | MCU, FPGA | 207 | 166MHz | 207 | ARM® Cortex®-M3 | CANbus, Ethernet, I2C, SPI, UART/USART, USB | FIELD PROGRAMMABLE GATE ARRAY | FPGA - 60K Logic Modules | 56520 | 256KB | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTXV2N6768 | Microsemi |
Min: 1 Mult: 1 |
download | Military, MIL-PRF-19500/543 | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | /files/microsemicorporation-jan2n6768-datasheets-1755.pdf | TO-204AE | 2 | 36 Weeks | 3 | no | No | 8541.29.00.95 | e0 | Tin/Lead (Sn/Pb) | MIL-19500 | BOTTOM | PIN/PEG | 2 | 1 | Qualified | O-MBFM-P2 | 35 ns | 190ns | 130 ns | 170 ns | 14A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 400V | 400V | 4W Ta 150W Tc | TO-204AA | 56A | 700 mJ | N-Channel | 400m Ω @ 14A, 10V | 4V @ 250μA | 14A Tc | 110nC @ 10V | 10V | ±20V |
