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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Reverse Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IXTP12N50P | IXYS | $15.74 |
Min: 1 Mult: 1 |
download | Polar™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtp12n50p-datasheets-2268.pdf | 500V | 12A | TO-220-3 | Lead Free | 3 | 24 Weeks | 3 | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 200W | 1 | FET General Purpose Power | Not Qualified | 27ns | 20 ns | 55 ns | 12A | 30V | SILICON | DRAIN | SWITCHING | 200W Tc | TO-220AB | 0.5Ohm | 600 mJ | 500V | N-Channel | 1830pF @ 25V | 500m Ω @ 6A, 10V | 5.5V @ 250μA | 12A Tc | 29nC @ 10V | 10V | ±30V | ||||||||||||||||||||||
| IXTP90N15T | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/ixys-ixth90n15t-datasheets-0089.pdf | TO-220-3 | 3 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 455W | 1 | Not Qualified | R-PSFM-T3 | 22ns | 19 ns | 44 ns | 90A | 30V | SILICON | DRAIN | SWITCHING | 455W Tc | TO-220AB | 250A | 0.02Ohm | 0.75 mJ | 150V | N-Channel | 4100pF @ 25V | 20m Ω @ 45A, 10V | 4.5V @ 1mA | 90A Tc | 80nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||
| IXFA5N100P-TRL | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 30 Weeks | 1000V | 250W Tc | N-Channel | 1830pF @ 25V | 2.8 Ω @ 2.5A, 10V | 6V @ 250μA | 5A Tc | 33.4nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA270N04T4 | IXYS |
Min: 1 Mult: 1 |
download | TrenchT4™ | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/ixys-ixta270n04t47-datasheets-2635.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 28 Weeks | unknown | 40V | 375W Tc | N-Channel | 9140pF @ 25V | 2.2m Ω @ 50A, 10V | 4V @ 250μA | 270A Tc | 182nC @ 10V | 10V | ±15V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTY01N80 | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixty01n80-datasheets-3285.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 3 | yes | EAR99 | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 25W | 1 | Not Qualified | R-PSSO-G2 | 12ns | 28 ns | 28 ns | 100mA | 20V | SILICON | DRAIN | SWITCHING | 25W Tc | TO-252AA | 0.1A | 0.4A | 800V | N-Channel | 60pF @ 25V | 50 Ω @ 100mA, 10V | 4.5V @ 25μA | 100mA Tc | 8nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||
| IXTA220N04T2-TRL | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 28 Weeks | 40V | 360W Tc | N-Channel | 6820pF @ 25V | 3.5m Ω @ 50A, 10V | 4V @ 250μA | 220A Tc | 112nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP1N80P | IXYS |
Min: 1 Mult: 1 |
download | Polar™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixty1n80p-datasheets-3869.pdf | TO-220-3 | 3 | 24 Weeks | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 42W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 1A | 20V | SILICON | DRAIN | SWITCHING | 42W Tc | TO-220AB | 1A | 2A | 75 mJ | 800V | N-Channel | 250pF @ 25V | 14 Ω @ 500mA, 10V | 4V @ 50μA | 1A Tc | 9nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||
| IXTY01N100-TRL | IXYS | $2.52 |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-252-3, DPak (2 Leads + Tab), SC-63 | 1 Weeks | 1000V | 25W Tc | N-Channel | 54pF @ 25V | 80 Ω @ 50mA, 10V | 4.5V @ 25μA | 100mA Tc | 6.9nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA8PN50P | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 500V | 8A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 8A | N-Channel | 8A Tc | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFV26N60P | IXYS |
Min: 1 Mult: 1 |
download | PolarHV™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfh26n60p-datasheets-1292.pdf | 600V | 26A | TO-220-3, Short Tab | Lead Free | 3 | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 460W | 1 | Not Qualified | 27ns | 21 ns | 75 ns | 26A | 30V | SILICON | DRAIN | SWITCHING | 460W Tc | 65A | 0.27Ohm | 1200 mJ | 600V | N-Channel | 4150pF @ 25V | 270m Ω @ 500mA, 10V | 5V @ 4mA | 26A Tc | 72nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||
| IXFV18N60PS | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarHT™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfh18n60p-datasheets-2073.pdf | 600V | 18A | PLUS-220SMD | Lead Free | 2 | No SVHC | 220 | yes | EAR99 | AVALANCHE RATED | GULL WING | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 360W | 1 | Not Qualified | R-PSSO-G2 | 22ns | 22 ns | 62 ns | 18A | 30V | 600V | SILICON | DRAIN | SWITCHING | 5.5V | 360W Tc | 200 ns | 45A | 0.4Ohm | 1000 mJ | 600V | N-Channel | 2500pF @ 25V | 5.5 V | 400m Ω @ 500mA, 10V | 5.5V @ 2.5mA | 18A Tc | 50nC @ 10V | 10V | ±30V | ||||||||||||||||||
| IXTA4N60P | IXYS |
Min: 1 Mult: 1 |
download | PolarHV™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtp4n60p-datasheets-5863.pdf | 600V | 4A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 8 Weeks | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 89W | 1 | Not Qualified | R-PSSO-G2 | 10ns | 20 ns | 50 ns | 4A | 30V | SILICON | DRAIN | SWITCHING | 89W Tc | 4A | 10A | 2Ohm | 150 mJ | 600V | N-Channel | 635pF @ 25V | 2 Ω @ 2A, 10V | 5.5V @ 100μA | 4A Tc | 13nC @ 10V | 10V | ±30V | ||||||||||||||||||||||
| IXFV12N80P | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfq12n80p-datasheets-0104.pdf | TO-220-3, Short Tab | 3 | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 360W | 1 | Not Qualified | 26ns | 25 ns | 70 ns | 12A | 30V | SILICON | DRAIN | SWITCHING | 360W Tc | 0.85Ohm | 800 mJ | 800V | N-Channel | 2800pF @ 25V | 850m Ω @ 500mA, 10V | 5.5V @ 2.5mA | 12A Tc | 51nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||
| IXFT26N50Q | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixft24n50q-datasheets-4238.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 2 | 8 Weeks | 200mOhm | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 30ns | 16 ns | 55 ns | 26A | 20V | SILICON | DRAIN | SWITCHING | 300W Tc | 104A | 1500 mJ | 500V | N-Channel | 3900pF @ 25V | 200m Ω @ 13A, 10V | 4.5V @ 4mA | 26A Tc | 95nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||
| IXTA240N055T | IXYS |
Min: 1 Mult: 1 |
download | TrenchT2™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixta240n055t-datasheets-7497.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 6 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 480W | 1 | Not Qualified | R-PSFM-G6 | 54ns | 75 ns | 63 ns | 240A | SILICON | DRAIN | SWITCHING | 480W Tc | 650A | 0.0036Ohm | 1000 mJ | 55V | N-Channel | 7600pF @ 25V | 3.6m Ω @ 25A, 10V | 4V @ 250μA | 240A Tc | 170nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||
| IXTF280N055T | IXYS |
Min: 1 Mult: 1 |
download | TrenchMV™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/ixys-ixtf280n055t-datasheets-7532.pdf | i4-Pac™-5 | 5 | 5 | yes | EAR99 | AVALANCHE RATED, UL RECOGNIZED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 5 | NOT SPECIFIED | 200W | 1 | Not Qualified | 55ns | 37 ns | 49 ns | 160A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 200W Tc | 55V | N-Channel | 9800pF @ 25V | 4m Ω @ 50A, 10V | 4V @ 250μA | 160A Tc | 200nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| IXTA80N10T7 | IXYS |
Min: 1 Mult: 1 |
download | TrenchMV™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixta80n10t7-datasheets-7566.pdf | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB | 6 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 230W | 1 | Not Qualified | R-PSSO-G6 | 54ns | 48 ns | 40 ns | 80A | SILICON | DRAIN | SWITCHING | 230W Tc | 220A | 0.014Ohm | 400 mJ | 100V | N-Channel | 3040pF @ 25V | 14m Ω @ 25A, 10V | 4.5V @ 100μA | 80A Tc | 60nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||
| IXTQ152N085T | IXYS |
Min: 1 Mult: 1 |
download | TrenchMV™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixth152n085t-datasheets-7560.pdf | TO-3P-3, SC-65-3 | 3 | 3 | yes | EAR99 | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 360W | 1 | Not Qualified | 50ns | 45 ns | 50 ns | 152A | SILICON | DRAIN | SWITCHING | 360W Tc | 410A | 0.007Ohm | 750 mJ | 85V | N-Channel | 5500pF @ 25V | 7m Ω @ 25A, 10V | 4V @ 250μA | 152A Tc | 114nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||
| IXTP7N60PM | IXYS |
Min: 1 Mult: 1 |
download | Polar™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixtp7n60pm-datasheets-7641.pdf | TO-220-3 | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 41W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 27ns | 26 ns | 65 ns | 4A | 30V | SILICON | ISOLATED | SWITCHING | 41W Tc | TO-220AB | 4A | 400 mJ | 600V | N-Channel | 1180pF @ 25V | 1.1 Ω @ 3.5A, 10V | 5.5V @ 100μA | 4A Tc | 20nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||
| IXTH160N075T | IXYS |
Min: 1 Mult: 1 |
download | TrenchMV™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtq160n075t-datasheets-7625.pdf | TO-247-3 | Lead Free | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 360W | 1 | Not Qualified | R-PSFM-T3 | 64ns | 60 ns | 60 ns | 160A | SILICON | DRAIN | SWITCHING | 360W Tc | TO-247AD | 430A | 0.006Ohm | 750 mJ | 75V | N-Channel | 4950pF @ 25V | 6m Ω @ 25A, 10V | 4V @ 250μA | 160A Tc | 112nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||
| IXUN280N10 | IXYS |
Min: 1 Mult: 1 |
download | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/ixys-ixun280n10-datasheets-7745.pdf | SOT-227-4, miniBLOC | 4 | EAR99 | HIGH RELIABILITY | unknown | UPPER | UNSPECIFIED | 4 | 1 | Not Qualified | R-XUFM-X4 | 280A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 100V | 100V | 770W Tc | 0.005Ohm | N-Channel | 18000pF @ 25V | 5m Ω @ 140A, 10V | 4V @ 4mA | 280A Tc | 440nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IXTY12N06T | IXYS |
Min: 1 Mult: 1 |
download | TrenchMV™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixtu12n06t-datasheets-8277.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 33W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 12A | 20V | SILICON | DRAIN | SWITCHING | 33W Tc | TO-252AB | 30A | 0.085Ohm | 20 mJ | 60V | N-Channel | 256pF @ 25V | 85m Ω @ 6A, 10V | 4V @ 25μA | 12A Tc | 3.4nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||
| IXFR120N20 | IXYS | $84.95 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfr120n20-datasheets-5324.pdf | 200V | 105A | ISOPLUS247™ | Lead Free | 3 | 8 Weeks | 17MOhm | 3 | yes | EAR99 | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 400W | 1 | FET General Purpose Power | 65ns | 35 ns | 110 ns | 105A | 20V | SILICON | ISOLATED | SWITCHING | 417W Tc | 480A | 200V | N-Channel | 9100pF @ 25V | 17m Ω @ 60A, 10V | 4V @ 8mA | 105A Tc | 360nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||
| IXFG55N50 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfg55n50-datasheets-8474.pdf | ISO264™ | 3 | 30 Weeks | 3 | yes | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 400W | 1 | Not Qualified | 60ns | 45 ns | 120 ns | 48A | 20V | SILICON | DRAIN | SWITCHING | 400W Tc | 220A | 0.09Ohm | 500V | N-Channel | 9400pF @ 25V | 90m Ω @ 27.5A, 10V | 4.5V @ 8mA | 48A Tc | 330nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| IXFK20N80Q | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2002 | https://pdf.utmel.com/r/datasheets/ixys-ixft20n80q-datasheets-7388.pdf | TO-264-3, TO-264AA | Lead Free | 3 | 420mOhm | 3 | yes | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 360W | 1 | FET General Purpose Power | Not Qualified | 27ns | 14 ns | 74 ns | 20A | 20V | SILICON | DRAIN | 360W Tc | 80A | 800V | N-Channel | 5100pF @ 25V | 420m Ω @ 10A, 10V | 4.5V @ 4mA | 20A Tc | 200nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| IXFN100N10S2 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount | Chassis Mount | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2001 | /files/ixys-ixfn100n10s1-datasheets-8622.pdf | SOT-227-4, miniBLOC | 4 | 4 | yes | EAR99 | AVALANCHE RATED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | Not Qualified | 100A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 100V | 100V | 360W Tc | 0.0125Ohm | N-Channel | 4500pF @ 25V | 15m Ω @ 500mA, 10V | 4V @ 4mA | 100A Tc | 180nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IXFK80N20Q | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfh80n20q-datasheets-5589.pdf | TO-264-3, TO-264AA | 3 | 3 | yes | EAR99 | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 360W | 1 | FET General Purpose Power | Not Qualified | 50ns | 20 ns | 75 ns | 80A | 20V | SILICON | DRAIN | SWITCHING | 360W Tc | 0.028Ohm | 1500 mJ | 200V | N-Channel | 4600pF @ 25V | 28m Ω @ 500mA, 10V | 4V @ 4mA | 80A Tc | 180nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||
| IXFX32N50 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfx32n50-datasheets-8698.pdf | TO-247-3 | Lead Free | 3 | 3 | yes | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | 32A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 500V | 500V | 360W Tc | 120A | 0.15Ohm | 1500 mJ | N-Channel | 5450pF @ 25V | 150m Ω @ 15A, 10V | 4V @ 4mA | 32A Tc | 300nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| IXTC13N50 | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixtc13n50-datasheets-8751.pdf | ISOPLUS220™ | 3 | 3 | yes | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 140W | 1 | Not Qualified | 27ns | 32 ns | 76 ns | 12A | 20V | SILICON | ISOLATED | SWITCHING | 140W Tc | 48A | 0.4Ohm | 500V | N-Channel | 2800pF @ 25V | 400m Ω @ 6.5A, 10V | 4V @ 2.5mA | 12A Tc | 120nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| IXFX210N17T | IXYS |
Min: 1 Mult: 1 |
download | GigaMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixfk210n17t-datasheets-9134.pdf | TO-247-3 | 3 | yes | EAR99 | AVALANCHE RATED | e1 | TIN SILVER COPPER | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 210A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 170V | 170V | 1150W Tc | 580A | 0.0075Ohm | 2000 mJ | N-Channel | 18800pF @ 25V | 7.5m Ω @ 60A, 10V | 5V @ 4mA | 210A Tc | 285nC @ 10V | 10V | ±20V |
