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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IXFA14N60P-TRL | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 30 Weeks | 600V | 300W Tc | N-Channel | 2500pF @ 25V | 550m Ω @ 7A, 10V | 5.5V @ 2.5mA | 14A Tc | 36nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFP12N50PM | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixfp12n50pm-datasheets-2059.pdf | TO-220-3 | 3 | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 50W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 27ns | 20 ns | 65 ns | 6A | 30V | SILICON | ISOLATED | SWITCHING | 50W Tc | TO-220AB | 6A | 30A | 0.5Ohm | 600 mJ | 500V | N-Channel | 1830pF @ 25V | 500m Ω @ 6A, 10V | 5.5V @ 1mA | 6A Tc | 29nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||
| IXTQ60N10T | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | TO-3P-3, SC-65-3 | 3 | 24 Weeks | EAR99 | AVALANCHE RATED | compliant | NO | SINGLE | 3 | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 176W Tc | 60A | 180A | 0.018Ohm | 500 mJ | N-Channel | 2650pF @ 25V | 18m Ω @ 25A, 10V | 4.5V @ 50μA | 60A Tc | 49nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| IXTA60N20T-TRL | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 30 Weeks | 200V | 500W Tc | N-Channel | 4530pF @ 25V | 40m Ω @ 30A, 10V | 5V @ 250μA | 60A Tc | 73nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFA12N65X2 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/ixys-ixfp12n65x2-datasheets-2135.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 19 Weeks | compliant | 650V | 180W Tc | N-Channel | 1134pF @ 25V | 310m Ω @ 6A, 10V | 5V @ 250μA | 12A Tc | 18.5nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA26P10T | IXYS | $6.69 |
Min: 1 Mult: 1 |
download | TrenchP™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixty26p10t-datasheets-9365.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 28 Weeks | EAR99 | AVALANCHE RATED | unknown | e3 | Matte Tin (Sn) | SINGLE | GULL WING | 3 | 1 | Other Transistors | Not Qualified | R-PSSO-G2 | 26A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 150W Tc | TO-263AA | 80A | 0.09Ohm | 300 mJ | P-Channel | 3820pF @ 25V | 90m Ω @ 13A, 10V | 4.5V @ 250μA | 26A Tc | 52nC @ 10V | 10V | ±15V | |||||||||||||||||||||||||||||||||
| IXFA110N15T2-TRL | IXYS |
Min: 1 Mult: 1 |
download | TrenchT2™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfp110n15t2-datasheets-0040.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 30 Weeks | 150V | 480W Tc | N-Channel | 8600pF @ 25V | 13m Ω @ 500mA, 10V | 4.5V @ 250μA | 110A Tc | 150nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTY1N100P | IXYS |
Min: 1 Mult: 1 |
download | Polar™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixta1n100p-datasheets-1536.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 24 Weeks | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 50W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 26ns | 24 ns | 55 ns | 1A | 20V | SILICON | DRAIN | SWITCHING | 1000V | 50W Tc | TO-252AA | 1A | 1.8A | 100 mJ | 1kV | N-Channel | 331pF @ 25V | 15 Ω @ 500mA, 10V | 4.5V @ 50μA | 1A Tc | 15.5nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||
| IXFP5N50P3 | IXYS | $6.72 |
Min: 1 Mult: 1 |
download | HiPerFET™, Polar3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/ixys-ixfa5n50p3-datasheets-1424.pdf | TO-220-3 | 10.66mm | 16mm | 4.83mm | 24 Weeks | 3 | Single | FET General Purpose Power | 14 ns | 28 ns | 5A | 30V | 500V | 114W Tc | 5A | N-Channel | 370pF @ 25V | 1.65 Ω @ 2.5A, 10V | 5V @ 1mA | 5A Tc | 6.9nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||
| IXTY90N055T2 | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 24 Weeks | EAR99 | AVALANCHE RATED | compliant | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 150W Tc | TO-252AA | 90A | 230A | 0.0084Ohm | 300 mJ | N-Channel | 2770pF @ 25V | 8.4m Ω @ 25A, 10V | 4V @ 250μA | 90A Tc | 42nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IXTA08N100D2-TRL | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 24 Weeks | 1000V | 60W Tc | N-Channel | 325pF @ 25V | 21 Ω @ 400mA, 0V | 4V @ 25μA | 800mA Tj | 14.6nC @ 5V | Depletion Mode | 0V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTY1R4N60P | IXYS | $0.46 |
Min: 1 Mult: 1 |
download | PolarHV™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixty1r4n60p-datasheets-5843.pdf | 600V | 1.4A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 8 Weeks | No SVHC | 3 | yes | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | GULL WING | 4 | Single | 50W | 1 | R-PSSO-G2 | 16ns | 16 ns | 25 ns | 1.4A | 30V | SILICON | DRAIN | SWITCHING | 5.5V | 50W Tc | TO-252AA | 9Ohm | 75 mJ | 600V | N-Channel | 140pF @ 25V | 9 Ω @ 700mA, 10V | 5.5V @ 25μA | 1.4A Tc | 5.2nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||
| IXFV18N60P | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfh18n60p-datasheets-2073.pdf | 600V | 18A | TO-220-3, Short Tab | Lead Free | 3 | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 360W | 1 | Not Qualified | 22ns | 22 ns | 62 ns | 18A | 30V | SILICON | DRAIN | SWITCHING | 360W Tc | 45A | 0.4Ohm | 1000 mJ | 600V | N-Channel | 2500pF @ 25V | 400m Ω @ 500mA, 10V | 5.5V @ 2.5mA | 18A Tc | 50nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||
| IXFV30N50PS | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarHT™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | /files/ixys-ixfh30n50p-datasheets-3825.pdf | 500V | 30A | PLUS-220SMD | Lead Free | 2 | 3 | yes | AVALANCHE RATED | GULL WING | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 460W | 1 | Not Qualified | R-PSSO-G2 | 24ns | 24 ns | 82 ns | 30A | 30V | SILICON | DRAIN | SWITCHING | 460W Tc | 75A | 0.2Ohm | 1200 mJ | 500V | N-Channel | 4150pF @ 25V | 200m Ω @ 15A, 10V | 5V @ 4mA | 30A Tc | 70nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||
| IXFV30N60P | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfh30n60p-datasheets-3966.pdf | 600V | 30A | TO-220-3, Short Tab | Lead Free | 3 | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 500W | 1 | Not Qualified | 20ns | 25 ns | 80 ns | 30A | 30V | SILICON | DRAIN | SWITCHING | 500W Tc | 80A | 0.24Ohm | 1500 mJ | 600V | N-Channel | 4000pF @ 25V | 240m Ω @ 15A, 10V | 5V @ 4mA | 30A Tc | 82nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||
| IXFV52N30PS | IXYS |
Min: 1 Mult: 1 |
download | PolarHT™ HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixfh52n30p-datasheets-7139.pdf | PLUS-220SMD | Lead Free | 2 | 3 | yes | EAR99 | AVALANCHE RATED | GULL WING | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 400W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 22ns | 20 ns | 60 ns | 52A | 20V | SILICON | DRAIN | SWITCHING | 400W Tc | 150A | 0.066Ohm | 1000 mJ | 300V | N-Channel | 3490pF @ 25V | 66m Ω @ 500mA, 10V | 5V @ 4mA | 52A Tc | 110nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| IXTA152N085T7 | IXYS | $2.44 |
Min: 1 Mult: 1 |
download | TrenchMV™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixta152n085t7-datasheets-7458.pdf | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB | 6 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 360W | 1 | Not Qualified | R-PSFM-G6 | 50ns | 45 ns | 50 ns | 152A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 360W Tc | 410A | 0.007Ohm | 750 mJ | 85V | N-Channel | 5500pF @ 25V | 7m Ω @ 25A, 10V | 4V @ 250μA | 152A Tc | 114nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| IXTA200N085T | IXYS |
Min: 1 Mult: 1 |
download | TrenchMV™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixta200n085t-datasheets-7501.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 480W | 1 | Not Qualified | R-PSSO-G2 | 80ns | 64 ns | 65 ns | 200A | SILICON | DRAIN | SWITCHING | 480W Tc | 540A | 0.005Ohm | 1000 mJ | 85V | N-Channel | 7600pF @ 25V | 5m Ω @ 25A, 10V | 4V @ 250μA | 200A Tc | 152nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IXTC230N085T | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/ixys-ixtc230n085t-datasheets-7537.pdf | ISOPLUS220™ | 3 | 160W | Single | 160W | 120A | 5.3mOhm | 85V | N-Channel | 120A Tc | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH182N055T | IXYS |
Min: 1 Mult: 1 |
download | TrenchMV™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixth182n055t-datasheets-7569.pdf | TO-247-3 | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 360W | 1 | Not Qualified | R-PSFM-T3 | 35ns | 38 ns | 53 ns | 182A | SILICON | DRAIN | SWITCHING | 360W Tc | TO-247AD | 490A | 0.005Ohm | 1000 mJ | 55V | N-Channel | 4850pF @ 25V | 5m Ω @ 25A, 10V | 4V @ 250μA | 182A Tc | 114nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| IXTQ182N055T | IXYS | $15.94 |
Min: 1 Mult: 1 |
download | TrenchMV™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixth182n055t-datasheets-7569.pdf | TO-3P-3, SC-65-3 | 3 | 3 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 360W | 1 | Not Qualified | 35ns | 38 ns | 53 ns | 182A | SILICON | DRAIN | SWITCHING | 360W Tc | 490A | 0.005Ohm | 1000 mJ | 55V | N-Channel | 4850pF @ 25V | 5m Ω @ 25A, 10V | 4V @ 250μA | 182A Tc | 114nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| IXTV230N085T | IXYS |
Min: 1 Mult: 1 |
download | TrenchMV™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtv230n085t-datasheets-7645.pdf | TO-220-3, Short Tab | 3 | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 550W | 1 | Not Qualified | 49ns | 39 ns | 56 ns | 230A | SILICON | DRAIN | SWITCHING | 550W Tc | 520A | 0.0044Ohm | 1000 mJ | 85V | N-Channel | 9900pF @ 25V | 4.4m Ω @ 50A, 10V | 4V @ 250μA | 230A Tc | 187nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IXTV280N055TS | IXYS |
Min: 1 Mult: 1 |
download | TrenchMV™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtv280n055ts-datasheets-7688.pdf | PLUS-220SMD | 2 | 3 | yes | EAR99 | AVALANCHE RATED | GULL WING | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 550W | 1 | Not Qualified | R-PSSO-G2 | 55ns | 37 ns | 49 ns | 280A | SILICON | DRAIN | SWITCHING | 550W Tc | 600A | 1500 mJ | 55V | N-Channel | 9800pF @ 25V | 3.2m Ω @ 50A, 10V | 4V @ 250μA | 280A Tc | 200nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IXTT50P085 | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | 3 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | 50A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 85V | 85V | 300W Tc | 200A | 0.055Ohm | P-Channel | 4200pF @ 25V | 55m Ω @ 25A, 10V | 5V @ 250μA | 50A Tc | 150nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IXFX180N07 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfx180n07-datasheets-5254.pdf | 70V | 180A | TO-247-3 | Lead Free | 3 | 8 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 560W | 1 | FET General Purpose Power | Not Qualified | 90ns | 55 ns | 140 ns | 180A | 20V | SILICON | DRAIN | SWITCHING | 568W Tc | 720A | 0.006Ohm | 70V | N-Channel | 9400pF @ 25V | 6m Ω @ 500mA, 10V | 4V @ 8mA | 180A Tc | 420nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| IXUN350N10 | IXYS |
Min: 1 Mult: 1 |
download | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/ixys-ixun350n10-datasheets-7056.pdf | SOT-227-4, miniBLOC | Lead Free | 4 | 2.5MOhm | 4 | EAR99 | HIGH RELIABILITY | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 965W | 1 | Not Qualified | 175ns | 150 ns | 650 ns | 350A | 20V | SILICON | ISOLATED | SWITCHING | 830W Tc | 5000 mJ | 100V | N-Channel | 27000pF @ 25V | 2.5m Ω @ 175A, 10V | 4V @ 3mA | 350A Tc | 640nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IXFC13N50 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfc13n50-datasheets-8500.pdf | ISOPLUS220™ | 3 | 3 | yes | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 140W | 1 | Not Qualified | 27ns | 32 ns | 76 ns | 12A | 20V | SILICON | ISOLATED | SWITCHING | 140W Tc | 48A | 0.4Ohm | 500V | N-Channel | 2800pF @ 25V | 400m Ω @ 6.5A, 10V | 4V @ 2.5mA | 12A Tc | 120nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IXFK180N085 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfk180n085-datasheets-8542.pdf | TO-264-3, TO-264AA | 3 | 3 | yes | EAR99 | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 560W | 1 | FET General Purpose Power | Not Qualified | 90ns | 55 ns | 140 ns | 180A | 20V | SILICON | DRAIN | SWITCHING | 560W Tc | 720A | 0.007Ohm | 85V | N-Channel | 9100pF @ 25V | 7m Ω @ 500mA, 10V | 4V @ 8mA | 180A Tc | 320nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IXFN170N10 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfk170n10-datasheets-8585.pdf | SOT-227-4, miniBLOC | 4 | 8 Weeks | No SVHC | 10mOhm | 3 | yes | EAR99 | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 600W | 1 | FET General Purpose Power | Not Qualified | R-PUFM-X4 | 90ns | 79 ns | 158 ns | 170A | 20V | 100V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 4V | 600W Tc | 680A | 100V | N-Channel | 10300pF @ 25V | 4 V | 10m Ω @ 500mA, 10V | 4V @ 8mA | 170A Tc | 515nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||
| IXFR180N06 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfr180n06-datasheets-8674.pdf | ISOPLUS247™ | 3 | 8 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 560W | 1 | Not Qualified | 100ns | 55 ns | 130 ns | 180A | 20V | SILICON | ISOLATED | SWITCHING | 560W Tc | 720A | 0.005Ohm | 60V | N-Channel | 7650pF @ 25V | 5m Ω @ 90A, 10V | 4V @ 8mA | 180A Tc | 420nC @ 10V | 10V | ±20V |
