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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Isolation Voltage | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IXTH44P15T | IXYS | $6.58 |
Min: 1 Mult: 1 |
download | TrenchP™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-ixtp44p15t-datasheets-5534.pdf | TO-247-3 | 3 | 28 Weeks | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Other Transistors | Not Qualified | R-PSFM-T3 | 44A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150V | 150V | 298W Tc | 130A | 0.065Ohm | 1000 mJ | P-Channel | 13400pF @ 25V | 65m Ω @ 500mA, 10V | 4V @ 250μA | 44A Tc | 175nC @ 10V | 10V | ±15V | ||||||||||||||||||||||||||||||||||
| IXTP20N65XM | IXYS | $7.57 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/ixys-ixtp20n65xm-datasheets-4071.pdf | TO-220-3 | 15 Weeks | 9A | 650V | 63W Tc | N-Channel | 1390pF @ 25V | 210m Ω @ 10A, 10V | 5.5V @ 250μA | 9A Tc | 35nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFQ22N60P3 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, Polar3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfh22n60p3-datasheets-4386.pdf | TO-3P-3, SC-65-3 | 15.8mm | 20.3mm | 4.9mm | 3 | 26 Weeks | 3 | AVALANCHE RATED | unknown | 3 | Single | 500W | 1 | FET General Purpose Power | Not Qualified | 28 ns | 17ns | 19 ns | 54 ns | 22A | 30V | SILICON | DRAIN | SWITCHING | 500W Tc | 55A | 400 mJ | 600V | N-Channel | 2600pF @ 25V | 360m Ω @ 11A, 10V | 5V @ 1.5mA | 22A Tc | 38nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| IXTA6N100D2HV | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 24 Weeks | compliant | 1000V | 300W Tc | N-Channel | 2650pF @ 10V | 2.2 Ω @ 3A, 0V | 4.5V @ 250μA | 6A Tj | 95nC @ 5V | Depletion Mode | 0V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH24N50 | IXYS |
Min: 1 Mult: 1 |
download | MegaMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixth24n50-datasheets-4211.pdf | 500V | 24A | TO-247-3 | Lead Free | 3 | 28 Weeks | No SVHC | 230mOhm | 3 | yes | EAR99 | No | 3 | Single | 300W | 1 | FET General Purpose Power | 33ns | 30 ns | 65 ns | 24A | 20V | 500V | SILICON | DRAIN | SWITCHING | 4V | 300W Tc | TO-247AD | 96A | 500V | N-Channel | 4200pF @ 25V | 4 V | 230m Ω @ 12A, 10V | 4V @ 250μA | 24A Tc | 190nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| IXTR90P10P | IXYS |
Min: 1 Mult: 1 |
download | PolarP™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixtr90p10p-datasheets-4248.pdf | ISOPLUS247™ | 3 | 26 Weeks | yes | EAR99 | AVALANCHE RATED, UL RECOGNIZED | unknown | e1 | TIN SILVER COPPER | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Other Transistors | Not Qualified | R-PSIP-T3 | 57A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 100V | 100V | 190W Tc | 225A | 0.027Ohm | 2500 mJ | P-Channel | 5800pF @ 25V | 27m Ω @ 45A, 10V | 4V @ 250μA | 57A Tc | 120nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IXFX32N80P | IXYS | $1.32 |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfx32n80p-datasheets-4281.pdf | TO-247-3 | 3 | 30 Weeks | 3 | yes | AVALANCHE RATED | unknown | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 830W | 1 | Not Qualified | 24ns | 24 ns | 85 ns | 32A | 30V | SILICON | DRAIN | SWITCHING | 830W Tc | 0.27Ohm | 2000 mJ | 800V | N-Channel | 8800pF @ 25V | 270m Ω @ 16A, 10V | 5V @ 8mA | 32A Tc | 150nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||
| IXTT500N04T2 | IXYS |
Min: 1 Mult: 1 |
download | TrenchT2™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixtt500n04t2-datasheets-4316.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 2 | 24 Weeks | yes | EAR99 | AVALANCHE RATED | No | e3 | PURE TIN | SINGLE | GULL WING | 4 | 1kW | 1 | FET General Purpose Power | R-PSSO-G2 | 500A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 1000W Tc | 800 mJ | N-Channel | 25000pF @ 25V | 1.6m Ω @ 100A, 10V | 3.5V @ 250μA | 500A Tc | 405nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IXTH20N60 | IXYS | $0.78 |
Min: 1 Mult: 1 |
download | MegaMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/ixys-ixth20n60-datasheets-4357.pdf | 600V | 20A | TO-247-3 | Lead Free | 3 | 8 Weeks | 350mOhm | 3 | yes | No | 3 | Single | 300W | 1 | FET General Purpose Power | 43ns | 40 ns | 70 ns | 20A | 20V | SILICON | ISOLATED | SWITCHING | 300W Tc | TO-247AD | 80A | 600V | N-Channel | 4500pF @ 25V | 350m Ω @ 10A, 10V | 4.5V @ 250μA | 20A Tc | 170nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IXTK128N15 | IXYS |
Min: 1 Mult: 1 |
download | MegaMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixtk128n15-datasheets-4381.pdf | TO-264-3, TO-264AA | 3 | 3 | yes | EAR99 | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 540W | 1 | Not Qualified | 30ns | 17 ns | 115 ns | 128A | 20V | SILICON | DRAIN | SWITCHING | 540W Tc | 512A | 0.015Ohm | 2500 mJ | 150V | N-Channel | 6000pF @ 25V | 15m Ω @ 500mA, 10V | 4V @ 250μA | 128A Tc | 240nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IXT-1-1N100S1 | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | SOIC | 30 Weeks | 1.5A | 1000V | N-Channel | 1.5A Tc | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFT30N60Q | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixft30n60q-datasheets-4457.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | 8 Weeks | yes | unknown | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 500W | 1 | Not Qualified | R-PSSO-G2 | 32ns | 16 ns | 80 ns | 30A | 20V | SILICON | DRAIN | 500W Tc | 120A | 0.23Ohm | 1500 mJ | 600V | N-Channel | 4700pF @ 25V | 230m Ω @ 500mA, 10V | 4.5V @ 4mA | 30A Tc | 125nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IXFT28N50Q | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixft28n50q-datasheets-4514.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | yes | unknown | e3 | Matte Tin (Sn) | DUAL | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 375W | 1 | Not Qualified | R-PDSO-G2 | 20ns | 12 ns | 51 ns | 28A | 30V | SILICON | DRAIN | SWITCHING | 375W Tc | 112A | 0.2Ohm | 1500 mJ | 500V | N-Channel | 3000pF @ 25V | 200m Ω @ 14A, 10V | 4.5V @ 4mA | 28A Tc | 94nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||
| IXFT9N80Q | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | https://pdf.utmel.com/r/datasheets/ixys-ixfh9n80q-datasheets-4148.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | yes | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 180W | 1 | Not Qualified | R-PSSO-G2 | 20ns | 13 ns | 42 ns | 9A | 20V | SILICON | DRAIN | SWITCHING | 180W Tc | 9A | 36A | 700 mJ | 800V | N-Channel | 2200pF @ 25V | 1.1 Ω @ 500mA, 10V | 5V @ 2.5mA | 9A Tc | 56nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| IXFN36N100 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount, Panel, Screw | Chassis Mount | -55°C~150°C TJ | Tube | Not Applicable | Screw | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfn36n100-datasheets-8118.pdf | 1kV | 36A | SOT-227-4, miniBLOC | 38.23mm | 9.6mm | 25.42mm | Lead Free | 4 | 4 Weeks | 46g | No SVHC | 240mOhm | 3 | yes | EAR99 | AVALANCHE RATED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 700W | 1 | FET General Purpose Power | Not Qualified | R-PUFM-X4 | 2.5kV | 41 ns | 55ns | 30 ns | 110 ns | 36A | 20V | 1kV | SILICON | DRAIN | SWITCHING | 1000V | 5V | 700W Tc | 4000 mJ | 1kV | N-Channel | 9200pF @ 25V | 5 V | 240m Ω @ 500mA, 10V | 5V @ 8mA | 36A Tc | 380nC @ 10V | 10V | ±20V | ||||||||||||||||
| IXTA42N25P | IXYS | $6.66 |
Min: 1 Mult: 1 |
download | PolarHT™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtp42n25p-datasheets-9418.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 28 Weeks | yes | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 300W | 1 | Not Qualified | R-PSSO-G2 | 28ns | 30 ns | 81 ns | 42A | 20V | SILICON | DRAIN | SWITCHING | 300W Tc | 110A | 0.084Ohm | 1000 mJ | 250V | N-Channel | 2300pF @ 25V | 84m Ω @ 500mA, 10V | 5.5V @ 250μA | 42A Tc | 70nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| IXTA120P065T-TRL | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 28 Weeks | 65V | 298W Tc | P-Channel | 13200pF @ 25V | 10m Ω @ 60A, 10V | 4V @ 250μA | 120A Tc | 185nC @ 10V | 10V | ±15V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTQ62N15P | IXYS | $6.30 |
Min: 1 Mult: 1 |
download | PolarHT™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixta62n15p-datasheets-5532.pdf | TO-3P-3, SC-65-3 | Lead Free | 3 | 24 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 350W | 1 | Not Qualified | 38ns | 35 ns | 76 ns | 62A | 20V | SILICON | DRAIN | SWITCHING | 350W Tc | 150A | 0.04Ohm | 1000 mJ | 150V | N-Channel | 2250pF @ 25V | 40m Ω @ 31A, 10V | 5.5V @ 250μA | 62A Tc | 70nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| IXTA260N055T2 | IXYS |
Min: 1 Mult: 1 |
download | TrenchT2™ | Surface Mount | -55°C~175°C TJ | 2 (1 Year) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixta260n055t2-datasheets-9967.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 28 Weeks | yes | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 480W Tc | 260A | 780A | 0.0033Ohm | 600 mJ | N-Channel | 10800pF @ 25V | 3.3m Ω @ 50A, 10V | 4V @ 250μA | 260A Tc | 140nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IXFP10N80P | IXYS | $6.07 |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/ixys-ixfa10n80p-datasheets-2794.pdf | TO-220-3 | 10.66mm | 9.15mm | 4.83mm | 3 | 26 Weeks | 3 | yes | AVALANCHE RATED | GULL WING | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | 21 ns | 22ns | 22 ns | 62 ns | 10A | 30V | SILICON | DRAIN | SWITCHING | 300W Tc | TO-220AB | 600 mJ | 800V | N-Channel | 2050pF @ 25V | 1.1 Ω @ 5A, 10V | 5.5V @ 2.5mA | 10A Tc | 40nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||
| IXTH3N100P | IXYS | $5.57 |
Min: 1 Mult: 1 |
download | PolarVHV™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixta3n100p-datasheets-9405.pdf | TO-247-3 | 3 | 28 Weeks | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 125W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 27ns | 29 ns | 75 ns | 3A | 20V | SILICON | DRAIN | SWITCHING | 1000V | 125W Tc | TO-247AD | 3A | 6A | 200 mJ | 1kV | N-Channel | 1100pF @ 25V | 4.8 Ω @ 1.5A, 10V | 4.5V @ 250μA | 3A Tc | 39nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| IXTH50N25T | IXYS | $1.96 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-ixth50n25t-datasheets-0253.pdf | TO-247-3 | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 50A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 250V | 250V | 400W Tc | 130A | 0.05Ohm | 1500 mJ | N-Channel | 4000pF @ 25V | 60m Ω @ 25A, 10V | 5V @ 1mA | 50A Tc | 78nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| IXTA90N15T | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/ixys-ixth90n15t-datasheets-0089.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 455W | 1 | Not Qualified | R-PSSO-G2 | 22ns | 19 ns | 44 ns | 90A | 30V | SILICON | DRAIN | SWITCHING | 455W Tc | 250A | 0.02Ohm | 0.75 mJ | 150V | N-Channel | 4100pF @ 25V | 20m Ω @ 45A, 10V | 4.5V @ 1mA | 90A Tc | 80nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||
| IXTH96N25T | IXYS |
Min: 1 Mult: 1 |
download | TrenchHV™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/ixys-ixtv96n25t-datasheets-3866.pdf | TO-247-3 | 3 | 30 Weeks | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 625W | 1 | Not Qualified | R-PSFM-T3 | 22ns | 28 ns | 59 ns | 96A | 30V | SILICON | DRAIN | SWITCHING | 625W Tc | TO-247AD | 250A | 0.029Ohm | 2000 mJ | 250V | N-Channel | 6100pF @ 25V | 29m Ω @ 500mA, 10V | 5V @ 1mA | 96A Tc | 114nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||
| IXTQ86N25T | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2012 | TO-3P-3, SC-65-3 | 3 | 26 Weeks | yes | EAR99 | AVALANCHE RATED | compliant | e3 | Matte Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 250V | 250V | 540W Ta | 86A | 190A | 0.037Ohm | 1500 mJ | N-Channel | 5330pF @ 25V | 37m Ω @ 43A, 10V | 5V @ 1mA | 86A Tc | 105nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| IXFA7N100P | IXYS | $60.34 |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarP2™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/ixys-ixfh7n100p-datasheets-3974.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 30 Weeks | 3 | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 7A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1000V | 1000V | 300W Tc | 7A | 18A | N-Channel | 2590pF @ 25V | 1.9 Ω @ 3.5A, 10V | 6V @ 1mA | 7A Tc | 47nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||
| IXTH68P20T | IXYS |
Min: 1 Mult: 1 |
download | TrenchP™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixtt68p20t-datasheets-8430.pdf | TO-247-3 | 3 | 28 Weeks | EAR99 | AVALANCHE RATED | SINGLE | 3 | 1 | Other Transistors | R-PSFM-T3 | 68A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 568W Tc | TO-247AD | 200A | 0.055Ohm | 2500 mJ | P-Channel | 33400pF @ 25V | 55m Ω @ 34A, 10V | 4V @ 250μA | 68A Tc | 380nC @ 10V | 10V | ±15V | ||||||||||||||||||||||||||||||||||||||||
| IXTQ102N25T | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-3P-3, SC-65-3 | 102A | 250V | N-Channel | 102A Tc | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFR12N120P | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | ISOPLUS247™ | 18 Weeks | 1200V | N-Channel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFK32N90P | IXYS |
Min: 1 Mult: 1 |
download | PolarHT™ HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfk32n90p-datasheets-0702.pdf | TO-264-3, TO-264AA | 3 | 26 Weeks | AVALANCHE RATED | SINGLE | 3 | 1 | FET General Purpose Power | R-PSFM-T3 | 32A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 900V | 900V | 960W Tc | 80A | 0.3Ohm | 2000 mJ | N-Channel | 10600pF @ 25V | 300m Ω @ 16A, 10V | 6.5V @ 1mA | 32A Tc | 215nC @ 10V | 10V | ±30V |
