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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Reach Compliance Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Isolation Voltage | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Reverse Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| FDM47-06KC5 | IXYS |
Min: 1 Mult: 1 |
download | CoolMOS™, HiPerDyn™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-fmd4706kc5-datasheets-0824.pdf | ISOPLUSi5-Pak™ | 5 | yes | UL RECOGNIZED, AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 5 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T5 | 47A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 600V | 600V | 0.045Ohm | 1950 mJ | N-Channel | 6800pF @ 100V | 45m Ω @ 44A, 10V | 3.5V @ 3mA | 47A Tc | 190nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IXFL44N100P | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixfl44n100p-datasheets-0904.pdf | ISOPLUS264™ | 3 | 26 Weeks | 3 | yes | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 357W | 1 | FET General Purpose Power | Not Qualified | 68ns | 54 ns | 90 ns | 22A | 30V | SILICON | ISOLATED | SWITCHING | 1000V | 357W Tc | 110A | 0.24Ohm | 2000 mJ | 1kV | N-Channel | 19000pF @ 25V | 240m Ω @ 22A, 10V | 6.5V @ 1mA | 22A Tc | 305nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||
| IXFN100N20 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfk90n20-datasheets-2052.pdf | SOT-227-4, miniBLOC | Lead Free | 4 | 23MOhm | 4 | yes | EAR99 | AVALANCHE RATED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 520W | 1 | Not Qualified | 80ns | 30 ns | 75 ns | 100A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 520W Tc | 200V | N-Channel | 9000pF @ 25V | 23m Ω @ 500mA, 10V | 4V @ 8mA | 100A Tc | 380nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IXFE50N50 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfe50n50-datasheets-0976.pdf | SOT-227-4, miniBLOC | 4 | 4 | yes | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 500W | 1 | FET General Purpose Power | Not Qualified | 60ns | 45 ns | 120 ns | 50A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 500W Tc | 53A | 220A | 0.1Ohm | 500V | N-Channel | 9400pF @ 25V | 100m Ω @ 25A, 10V | 4.5V @ 8mA | 47A Tc | 330nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| IXFN27N80Q | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | Screw | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | https://pdf.utmel.com/r/datasheets/ixys-ixfn27n80q-datasheets-1015.pdf | SOT-227-4, miniBLOC | Lead Free | 4 | 30 Weeks | 40g | No SVHC | 320mOhm | 4 | yes | EAR99 | AVALANCHE RATED | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 520W | 1 | Not Qualified | 2.5kV | 28ns | 13 ns | 50 ns | 27A | 20V | 800V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 4.5V | 520W Tc | 108A | 2500 mJ | 800V | N-Channel | 7600pF @ 25V | 4.5 V | 320m Ω @ 500mA, 10V | 4.5V @ 4mA | 27A Tc | 170nC @ 10V | 10V | ±20V | |||||||||||||||||||||||
| IXFN21N100Q | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfn21n100q-datasheets-1049.pdf | SOT-227-4, miniBLOC | Lead Free | 4 | 30 Weeks | 4 | yes | AVALANCHE RATED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 520W | 1 | FET General Purpose Power | Not Qualified | 18ns | 12 ns | 60 ns | 21A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 1000V | 520W Tc | 0.5Ohm | 2500 mJ | 1kV | N-Channel | 5900pF @ 25V | 500m Ω @ 500mA, 10V | 5V @ 4mA | 21A Tc | 170nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||
| IXTK46N50L | IXYS | $36.13 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/ixys-ixtx46n50l-datasheets-9312.pdf | TO-264-3, TO-264AA | 19.96mm | 26.16mm | 5.13mm | Lead Free | 3 | 160MOhm | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 700W | 1 | FET General Purpose Power | Not Qualified | 40 ns | 50ns | 42 ns | 80 ns | 46A | 30V | SILICON | DRAIN | SWITCHING | 700W Tc | 100A | 1500 mJ | 500V | N-Channel | 7000pF @ 25V | 160m Ω @ 500mA, 20V | 6V @ 250μA | 46A Tc | 260nC @ 15V | 20V | ±30V | |||||||||||||||||||||||||||
| IXFN32N60 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1996 | https://pdf.utmel.com/r/datasheets/ixys-ixfk32n60-datasheets-0809.pdf | SOT-227-4, miniBLOC | 4 | yes | AVALANCHE RATED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 520W | 1 | FET General Purpose Power | Not Qualified | R-PUFM-X4 | 45ns | 60 ns | 100 ns | 32A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 520AW Tc | 128A | 0.25Ohm | 600V | N-Channel | 9000pF @ 25V | 250m Ω @ 500mA, 10V | 4.5V @ 8mA | 32A Tc | 325nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IXTN120P20T | IXYS | $51.69 |
Min: 1 Mult: 1 |
download | TrenchP™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/ixys-ixtn120p20t-datasheets-1162.pdf | SOT-227-4, miniBLOC | Lead Free | 4 | EAR99 | AVALANCHE RATED, UL RECOGNIZED | UPPER | UNSPECIFIED | 4 | 1 | FET General Purpose Power | R-PUFM-X4 | 106A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 200V | 200V | 830W Tc | 400A | 0.03Ohm | 3000 mJ | P-Channel | 73000pF @ 25V | 30m Ω @ 60A, 10V | 4.5V @ 250μA | 106A Tc | 740nC @ 10V | 10V | ±15V | |||||||||||||||||||||||||||||||||||||
| IXFP7N60P3 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/ixys-ixfp7n60p3-datasheets-1330.pdf | TO-220-3 | Lead Free | 3 | 24 Weeks | AVALANCHE RATED | SINGLE | 3 | 1 | FET General Purpose Power | R-PSFM-T3 | 7A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 180W Tc | TO-220AB | 7A | 16A | 400 mJ | N-Channel | 705pF @ 25V | 1.15 Ω @ 500mA, 10V | 5V @ 1mA | 7A Tc | 13.3nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| IXTU4N70X2 | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | 150°C TJ | MOSFET (Metal Oxide) | TO-251-3 Stub Leads, IPak | 15 Weeks | compliant | 700V | 80W Tc | N-Channel | 386pF @ 25V | 850m Ω @ 2A, 10V | 4.5V @ 250μA | 4A Tc | 11.8nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA42N25P-TRL | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 28 Weeks | 250V | 300W Tc | N-Channel | 2300pF @ 25V | 84m Ω @ 21A, 10V | 5.5V @ 250μA | 42A Tc | 70nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP08N120P | IXYS |
Min: 1 Mult: 1 |
download | Polar™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixtp08n120p-datasheets-2050.pdf | TO-220-3 | Lead Free | 3 | 24 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | 800mA | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1200V | 1200V | 50W Tc | TO-220AB | 0.8A | 1.8A | 80 mJ | N-Channel | 333pF @ 25V | 25 Ω @ 500mA, 10V | 4.5V @ 50μA | 800mA Tc | 14nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| IXTY48P05T | IXYS | $3.52 |
Min: 1 Mult: 1 |
download | TrenchP™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/ixys-ixty48p05t-datasheets-2147.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 17 Weeks | 3 | EAR99 | AVALANCHE RATED | SINGLE | GULL WING | 4 | 1 | Other Transistors | Not Qualified | R-PSSO-G2 | 48A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 50V | 50V | 150W Tc | TO-252AA | 150A | P-Channel | 3660pF @ 25V | 30m Ω @ 24A, 10V | 4.5V @ 250μA | 48A Tc | 53nC @ 10V | 10V | ±15V | |||||||||||||||||||||||||||||||||||
| IXTP12N50P | IXYS | $15.74 |
Min: 1 Mult: 1 |
download | Polar™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtp12n50p-datasheets-2268.pdf | 500V | 12A | TO-220-3 | Lead Free | 3 | 24 Weeks | 3 | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 200W | 1 | FET General Purpose Power | Not Qualified | 27ns | 20 ns | 55 ns | 12A | 30V | SILICON | DRAIN | SWITCHING | 200W Tc | TO-220AB | 0.5Ohm | 600 mJ | 500V | N-Channel | 1830pF @ 25V | 500m Ω @ 6A, 10V | 5.5V @ 250μA | 12A Tc | 29nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||
| IXTP90N15T | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/ixys-ixth90n15t-datasheets-0089.pdf | TO-220-3 | 3 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 455W | 1 | Not Qualified | R-PSFM-T3 | 22ns | 19 ns | 44 ns | 90A | 30V | SILICON | DRAIN | SWITCHING | 455W Tc | TO-220AB | 250A | 0.02Ohm | 0.75 mJ | 150V | N-Channel | 4100pF @ 25V | 20m Ω @ 45A, 10V | 4.5V @ 1mA | 90A Tc | 80nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||
| IXFA5N100P-TRL | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 30 Weeks | 1000V | 250W Tc | N-Channel | 1830pF @ 25V | 2.8 Ω @ 2.5A, 10V | 6V @ 250μA | 5A Tc | 33.4nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA270N04T4 | IXYS |
Min: 1 Mult: 1 |
download | TrenchT4™ | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/ixys-ixta270n04t47-datasheets-2635.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 28 Weeks | unknown | 40V | 375W Tc | N-Channel | 9140pF @ 25V | 2.2m Ω @ 50A, 10V | 4V @ 250μA | 270A Tc | 182nC @ 10V | 10V | ±15V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTY01N80 | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixty01n80-datasheets-3285.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 3 | yes | EAR99 | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 25W | 1 | Not Qualified | R-PSSO-G2 | 12ns | 28 ns | 28 ns | 100mA | 20V | SILICON | DRAIN | SWITCHING | 25W Tc | TO-252AA | 0.1A | 0.4A | 800V | N-Channel | 60pF @ 25V | 50 Ω @ 100mA, 10V | 4.5V @ 25μA | 100mA Tc | 8nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IXTA220N04T2-TRL | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 28 Weeks | 40V | 360W Tc | N-Channel | 6820pF @ 25V | 3.5m Ω @ 50A, 10V | 4V @ 250μA | 220A Tc | 112nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP1N80P | IXYS |
Min: 1 Mult: 1 |
download | Polar™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixty1n80p-datasheets-3869.pdf | TO-220-3 | 3 | 24 Weeks | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 42W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 1A | 20V | SILICON | DRAIN | SWITCHING | 42W Tc | TO-220AB | 1A | 2A | 75 mJ | 800V | N-Channel | 250pF @ 25V | 14 Ω @ 500mA, 10V | 4V @ 50μA | 1A Tc | 9nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IXTY01N100-TRL | IXYS | $2.52 |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-252-3, DPak (2 Leads + Tab), SC-63 | 1 Weeks | 1000V | 25W Tc | N-Channel | 54pF @ 25V | 80 Ω @ 50mA, 10V | 4.5V @ 25μA | 100mA Tc | 6.9nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA8PN50P | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 500V | 8A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 8A | N-Channel | 8A Tc | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFV26N60P | IXYS |
Min: 1 Mult: 1 |
download | PolarHV™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfh26n60p-datasheets-1292.pdf | 600V | 26A | TO-220-3, Short Tab | Lead Free | 3 | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 460W | 1 | Not Qualified | 27ns | 21 ns | 75 ns | 26A | 30V | SILICON | DRAIN | SWITCHING | 460W Tc | 65A | 0.27Ohm | 1200 mJ | 600V | N-Channel | 4150pF @ 25V | 270m Ω @ 500mA, 10V | 5V @ 4mA | 26A Tc | 72nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||
| IXFV18N60PS | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarHT™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfh18n60p-datasheets-2073.pdf | 600V | 18A | PLUS-220SMD | Lead Free | 2 | No SVHC | 220 | yes | EAR99 | AVALANCHE RATED | GULL WING | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 360W | 1 | Not Qualified | R-PSSO-G2 | 22ns | 22 ns | 62 ns | 18A | 30V | 600V | SILICON | DRAIN | SWITCHING | 5.5V | 360W Tc | 200 ns | 45A | 0.4Ohm | 1000 mJ | 600V | N-Channel | 2500pF @ 25V | 5.5 V | 400m Ω @ 500mA, 10V | 5.5V @ 2.5mA | 18A Tc | 50nC @ 10V | 10V | ±30V | |||||||||||||||||||||||
| IXTA4N60P | IXYS |
Min: 1 Mult: 1 |
download | PolarHV™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtp4n60p-datasheets-5863.pdf | 600V | 4A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 8 Weeks | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 89W | 1 | Not Qualified | R-PSSO-G2 | 10ns | 20 ns | 50 ns | 4A | 30V | SILICON | DRAIN | SWITCHING | 89W Tc | 4A | 10A | 2Ohm | 150 mJ | 600V | N-Channel | 635pF @ 25V | 2 Ω @ 2A, 10V | 5.5V @ 100μA | 4A Tc | 13nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||
| IXFV12N80P | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfq12n80p-datasheets-0104.pdf | TO-220-3, Short Tab | 3 | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 360W | 1 | Not Qualified | 26ns | 25 ns | 70 ns | 12A | 30V | SILICON | DRAIN | SWITCHING | 360W Tc | 0.85Ohm | 800 mJ | 800V | N-Channel | 2800pF @ 25V | 850m Ω @ 500mA, 10V | 5.5V @ 2.5mA | 12A Tc | 51nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| IXFT26N50Q | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixft24n50q-datasheets-4238.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 2 | 8 Weeks | 200mOhm | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 30ns | 16 ns | 55 ns | 26A | 20V | SILICON | DRAIN | SWITCHING | 300W Tc | 104A | 1500 mJ | 500V | N-Channel | 3900pF @ 25V | 200m Ω @ 13A, 10V | 4.5V @ 4mA | 26A Tc | 95nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||
| IXTA240N055T | IXYS |
Min: 1 Mult: 1 |
download | TrenchT2™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixta240n055t-datasheets-7497.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 6 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 480W | 1 | Not Qualified | R-PSFM-G6 | 54ns | 75 ns | 63 ns | 240A | SILICON | DRAIN | SWITCHING | 480W Tc | 650A | 0.0036Ohm | 1000 mJ | 55V | N-Channel | 7600pF @ 25V | 3.6m Ω @ 25A, 10V | 4V @ 250μA | 240A Tc | 170nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IXTF280N055T | IXYS |
Min: 1 Mult: 1 |
download | TrenchMV™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/ixys-ixtf280n055t-datasheets-7532.pdf | i4-Pac™-5 | 5 | 5 | yes | EAR99 | AVALANCHE RATED, UL RECOGNIZED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 5 | NOT SPECIFIED | 200W | 1 | Not Qualified | 55ns | 37 ns | 49 ns | 160A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 200W Tc | 55V | N-Channel | 9800pF @ 25V | 4m Ω @ 50A, 10V | 4V @ 250μA | 160A Tc | 200nC @ 10V | 10V | ±20V |
