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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Type | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | Evaluation Kit | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Isolation Voltage | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | Function | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Reverse Recovery Time | Utilized IC / Part | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Supplied Contents | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IXTP50N085T | IXYS |
Min: 1 Mult: 1 |
download | TrenchMV™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtp50n085t-datasheets-7614.pdf | TO-220-3 | 3 | yes | EAR99 | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 130W | 1 | Not Qualified | R-PSFM-T3 | 32ns | 33 ns | 38 ns | 50A | SILICON | DRAIN | SWITCHING | 130W Tc | TO-220AB | 130A | 0.023Ohm | 250 mJ | 85V | N-Channel | 1460pF @ 25V | 23m Ω @ 25A, 10V | 4V @ 25μA | 50A Tc | 34nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IXTU1R4N60P | IXYS |
Min: 1 Mult: 1 |
download | PolarHV™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixty1r4n60p-datasheets-5843.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | yes | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 50W | 1 | Not Qualified | R-PSIP-T3 | 16ns | 16 ns | 25 ns | 1.4A | 30V | SILICON | DRAIN | SWITCHING | 50W Tc | 2.1A | 9Ohm | 75 mJ | 600V | N-Channel | 140pF @ 25V | 9 Ω @ 700mA, 10V | 5.5V @ 25μA | 1.4A Tc | 5.2nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| IXTV230N085TS | IXYS |
Min: 1 Mult: 1 |
download | TrenchMV™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtv230n085t-datasheets-7645.pdf | PLUS-220SMD | 2 | 3 | yes | EAR99 | AVALANCHE RATED | GULL WING | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 550W | 1 | Not Qualified | R-PSSO-G2 | 49ns | 39 ns | 56 ns | 230A | SILICON | DRAIN | SWITCHING | 550W Tc | 520A | 0.0044Ohm | 1000 mJ | 85V | N-Channel | 9900pF @ 25V | 4.4m Ω @ 50A, 10V | 4V @ 250μA | 230A Tc | 187nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IXTP98N075T | IXYS | $0.33 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/ixys-ixta98n075t-datasheets-7554.pdf | TO-220-3 | Lead Free | 3 | 3 | yes | EAR99 | ULTRA-LOW RESISTANCE | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 200W | 1 | Not Qualified | 42ns | 27 ns | 42 ns | 98A | 20V | SILICON | DRAIN | SWITCHING | 230W Tc | TO-220AB | 280A | 10mOhm | 600 mJ | 75V | N-Channel | 4V @ 100μA | 98A Tc | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IXFN26N90 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Tube | Not Applicable | Screw | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfn26n90-datasheets-5292.pdf | 900V | 26A | SOT-227-4, miniBLOC | Lead Free | 4 | 8 Weeks | 44g | No SVHC | 300mOhm | 3 | yes | EAR99 | AVALANCHE RATED, UL RECOGNIZED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 600W | 1 | FET General Purpose Power | Not Qualified | R-PUFM-X4 | 2.5kV | 35ns | 24 ns | 130 ns | 26A | 20V | 900V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 5V | 600W Tc | 104A | 900V | N-Channel | 10800pF @ 25V | 5 V | 300m Ω @ 13A, 10V | 5V @ 8mA | 26A Tc | 240nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||
| IXFE180N10 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2002 | https://pdf.utmel.com/r/datasheets/ixys-ixfe180n10-datasheets-8423.pdf | SOT-227-4, miniBLOC | 4 | 4 | yes | EAR99 | AVALANCHE RATED | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 500W | 1 | FET General Purpose Power | Not Qualified | 90ns | 65 ns | 140 ns | 176A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 500W Tc | 720A | 0.008Ohm | 3000 mJ | 100V | N-Channel | 9100pF @ 25V | 8m Ω @ 90A, 10V | 4V @ 8mA | 176A Tc | 360nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IXFH75N10Q | IXYS | $8.24 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/ixys-ixfh75n10q-datasheets-8506.pdf | TO-247-3 | 3 | 3 | yes | EAR99 | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 300W | 1 | FET General Purpose Power | 65ns | 28 ns | 65 ns | 75A | 20V | SILICON | DRAIN | SWITCHING | 300W Tc | 0.02Ohm | 100V | N-Channel | 3700pF @ 25V | 20m Ω @ 37.5A, 10V | 4V @ 4mA | 75A Tc | 180nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IXFK170N10 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfk170n10-datasheets-8585.pdf | TO-264-3, TO-264AA | Lead Free | 3 | 10mOhm | yes | EAR99 | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 560W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 90ns | 79 ns | 158 ns | 170A | 20V | SILICON | DRAIN | SWITCHING | 560W Tc | 680A | 100V | N-Channel | 10300pF @ 25V | 10m Ω @ 500mA, 10V | 4V @ 8mA | 170A Tc | 515nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IXFN44N50U2 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount | Chassis Mount | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfn44n50u2-datasheets-8648.pdf | SOT-227-4, miniBLOC | 4 | 4 | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | UPPER | UNSPECIFIED | 260 | 4 | 35 | 1 | FET General Purpose Power | Not Qualified | 44A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 500V | 500V | 520W Tc | 176A | 0.12Ohm | N-Channel | 8400pF @ 25V | 120m Ω @ 500mA, 10V | 4V @ 8mA | 44A Tc | 270nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IXFT32N50 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixft30n50-datasheets-4425.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 2 | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 360W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 42ns | 26 ns | 110 ns | 32A | 20V | SILICON | DRAIN | SWITCHING | 360W Tc | 128A | 0.15Ohm | 1500 mJ | 500V | N-Channel | 5700pF @ 25V | 150m Ω @ 15A, 10V | 4V @ 4mA | 32A Tc | 300nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IXTK80N25 | IXYS |
Min: 1 Mult: 1 |
download | MegaMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixtk80n25-datasheets-8708.pdf | TO-264-3, TO-264AA | Lead Free | 3 | 33MOhm | 3 | yes | EAR99 | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 540W | 1 | Not Qualified | 25ns | 24 ns | 88 ns | 80A | 20V | SILICON | DRAIN | SWITCHING | 540W Tc | 2500 mJ | 250V | N-Channel | 6000pF @ 25V | 33m Ω @ 500mA, 10V | 4V @ 250μA | 80A Tc | 240nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IXFN48N55 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfn48n55-datasheets-8869.pdf | SOT-227-4, miniBLOC | 4 | 4 | yes | AVALANCHE RATED | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | 48A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 550V | 550V | 600W Tc | 192A | 0.11Ohm | 3000 mJ | N-Channel | 8900pF @ 25V | 110m Ω @ 500mA, 10V | 4.5V @ 8mA | 48A Tc | 330nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IXFN100N10S3 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount | Chassis Mount | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2001 | https://pdf.utmel.com/r/datasheets/ixys-ixfn100n10s1-datasheets-8622.pdf | SOT-227-4, miniBLOC | 4 | 4 | yes | EAR99 | AVALANCHE RATED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | Not Qualified | 100A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 100V | 100V | 360W Tc | 0.0125Ohm | N-Channel | 4500pF @ 25V | 15m Ω @ 500mA, 10V | 4V @ 4mA | 100A Tc | 180nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IXFH26N55Q | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfh26n55q-datasheets-4284.pdf | TO-247-3 | 3 | 3 | yes | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 375W | 1 | Not Qualified | 18ns | 13 ns | 50 ns | 26A | 30V | SILICON | DRAIN | SWITCHING | 375W Tc | TO-247AD | 104A | 1500 mJ | 550V | N-Channel | 3000pF @ 25V | 230m Ω @ 13A, 10V | 4.5V @ 4mA | 26A Tc | 92nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| IXFC74N20P | IXYS |
Min: 1 Mult: 1 |
download | PolarHT™ HiPerFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfc74n20p-datasheets-4331.pdf | ISOPLUS220™ | 3 | No SVHC | 220 | yes | EAR99 | AVALANCHE RATED, UL RECOGNIZED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 120W | 1 | Not Qualified | R-PSIP-T3 | 2.5kV | 21ns | 21 ns | 60 ns | 35A | 20V | 200V | SILICON | ISOLATED | SWITCHING | 5V | 120W Tc | 200 ns | 200A | 0.036Ohm | 1000 mJ | 200V | N-Channel | 3300pF @ 25V | 5 V | 36m Ω @ 37A, 10V | 5V @ 4mA | 35A Tc | 107nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IXFN39N90 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2001 | https://pdf.utmel.com/r/datasheets/ixys-ixfn39n90-datasheets-4380.pdf | SOT-227-4, miniBLOC | 4 | 8 Weeks | 4 | yes | AVALANCHE RATED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 700W | 1 | FET General Purpose Power | Not Qualified | 68ns | 30 ns | 125 ns | 39A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 694W Tc | 0.2Ohm | 900V | N-Channel | 9200pF @ 25V | 220m Ω @ 500mA, 10V | 5V @ 8mA | 39A Tc | 390nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IXTV03N400S | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixtv03n400s-datasheets-5320.pdf | PLUS-220SMD | Lead Free | 2 | 220 | yes | AVALANCHE RATED | No | SINGLE | GULL WING | 3 | 130W | 1 | FET General Purpose Power | R-PSSO-G2 | 300mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 4000V | 130W Tc | 300A | 800A | 4kV | N-Channel | 435pF @ 25V | 290 Ω @ 500mA, 10V | 4V @ 250μA | 300mA Tc | 16.3nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IXFK55N50F | IXYS |
Min: 1 Mult: 1 |
download | HiPerRF™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/ixys-ixfx55n50f-datasheets-6230.pdf | TO-264-3, TO-264AA | Lead Free | 3 | 10 Weeks | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NO | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 560W | 1 | Not Qualified | R-PSFM-T3 | 20ns | 9.6 ns | 45 ns | 55A | 20V | SILICON | DRAIN | SWITCHING | 560W Tc | 220A | 0.0085Ohm | 3000 mJ | 500V | N-Channel | 6700pF @ 25V | 85m Ω @ 27.5A, 10V | 5.5V @ 8mA | 55A Tc | 195nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IXFJ52N30Q | IXYS |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFR16N90Q | IXYS |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP110N12T2 | IXYS |
Min: 1 Mult: 1 |
download | TrenchT2™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixta110n12t2-datasheets-3419.pdf | TO-220-3 | 24 Weeks | unknown | 120V | 517W Tc | N-Channel | 6570pF @ 25V | 14m Ω @ 55A, 10V | 4.5V @ 250μA | 110A Tc | 120nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTM9226 | IXYS |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTM6N90A | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixth6n90-datasheets-4158.pdf | TO-204AA, TO-3 | 2 | yes | e3 | Matte Tin (Sn) | NO | BOTTOM | PIN/PEG | 260 | 2 | 35 | 1 | FET General Purpose Power | Not Qualified | O-MBFM-P2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 900V | 900V | 180W Tc | 6A | 24A | N-Channel | 2600pF @ 25V | 1.4 Ω @ 3A, 10V | 4.5V @ 250μA | 6A Tc | 130nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| EVDI430MCI | IXYS |
Min: 1 Mult: 1 |
download | Power Management | 1 (Unlimited) | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-evdd430ci-datasheets-5891.pdf | Yes | FET Driver (External FET) | IXDI430MCI | Board(s) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EVDI402 | IXYS |
Min: 1 Mult: 1 |
download | Power Management | Box | 1 (Unlimited) | RoHS Compliant | Yes | FET Driver (External FET) | IXDI402 | Board(s) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFA72N30X3 | IXYS | $8.13 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfa72n30x3-datasheets-8512.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 25 Weeks | 300V | 390W Tc | N-Channel | 5.4nF @ 25V | 19m Ω @ 36A, 10V | 4.5V @ 1.5mA | 72A Tc | 82nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTT16P60P | IXYS |
Min: 1 Mult: 1 |
download | PolarP™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixth16p60p-datasheets-8613.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 3 | 24 Weeks | yes | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | SINGLE | THROUGH-HOLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Other Transistors | Not Qualified | R-PSFM-T3 | 16A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 460W Tc | TO-247 | 48A | 0.72Ohm | 2500 mJ | P-Channel | 5120pF @ 25V | 720m Ω @ 500mA, 10V | 4.5V @ 250μA | 16A Tc | 92nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IXTP36N30P | IXYS |
Min: 1 Mult: 1 |
download | PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixta36n30p-datasheets-4075.pdf | TO-220-3 | 10.66mm | 9.15mm | 4.83mm | Lead Free | 3 | 24 Weeks | 110MOhm | 3 | yes | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | 3 | Single | 300W | 1 | 24 ns | 30ns | 28 ns | 97 ns | 36A | 30V | SILICON | DRAIN | SWITCHING | 300W Tc | TO-220AB | 90A | 300V | N-Channel | 2250pF @ 25V | 110m Ω @ 18A, 10V | 5.5V @ 250μA | 36A Tc | 70nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| IXFQ60N50P3 | IXYS | $9.91 |
Min: 1 Mult: 1 |
download | HiPerFET™, Polar3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixfh60n50p3-datasheets-1724.pdf | TO-3P-3, SC-65-3 | 15.8mm | 20.3mm | 4.9mm | 3 | 26 Weeks | 3 | AVALANCHE RATED | 3 | Single | 1.04kW | 1 | FET General Purpose Power | Not Qualified | 18 ns | 16ns | 8 ns | 37 ns | 60A | 30V | SILICON | DRAIN | SWITCHING | 1040W Tc | 150A | 0.1Ohm | 1000 mJ | 500V | N-Channel | 6250pF @ 25V | 100m Ω @ 30A, 10V | 5V @ 4mA | 60A Tc | 96nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| IXTT82N25P | IXYS | $8.68 |
Min: 1 Mult: 1 |
download | PolarHT™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtq82n25p-datasheets-3903.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 2 | 24 Weeks | yes | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 500W | 1 | Not Qualified | R-PSSO-G2 | 20ns | 22 ns | 78 ns | 82A | 20V | SILICON | DRAIN | SWITCHING | 500W Tc | 200A | 0.035Ohm | 1000 mJ | 250V | N-Channel | 4800pF @ 25V | 35m Ω @ 41A, 10V | 5V @ 250μA | 82A Tc | 142nC @ 10V | 10V | ±20V |
