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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Type | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | Evaluation Kit | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Isolation Voltage | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Drain to Source Voltage (Vdss) | Function | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Utilized IC / Part | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Supplied Contents | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IXTP152N085T | IXYS | $0.80 |
Min: 1 Mult: 1 |
download | TrenchMV™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixta152n085t-datasheets-7446.pdf | TO-220-3 | 3 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 360W | 1 | Not Qualified | R-PSFM-T3 | 50ns | 45 ns | 50 ns | 152A | SILICON | DRAIN | SWITCHING | 360W Tc | TO-220AB | 410A | 0.007Ohm | 750 mJ | 85V | N-Channel | 5500pF @ 25V | 7m Ω @ 25A, 10V | 4V @ 250μA | 152A Tc | 114nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IXTC250N075T | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/ixys-ixtc250n075t-datasheets-7648.pdf | ISOPLUS220™ | 3 | 3 | yes | EAR99 | AVALANCHE RATED, UL RECOGNIZED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 160W | 1 | Not Qualified | 55 ns | 128A | SILICON | ISOLATED | SWITCHING | 160W Tc | 600A | 0.0044Ohm | 1000 mJ | 75V | N-Channel | 9900pF @ 25V | 4.4m Ω @ 25A, 10V | 4V @ 250μA | 128A Tc | 200nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IXTY2N80P | IXYS |
Min: 1 Mult: 1 |
download | PolarHV™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixta2n80p-datasheets-7550.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 8 Weeks | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 70W | 1 | Not Qualified | R-PSSO-G2 | 35ns | 28 ns | 53 ns | 2A | 30V | SILICON | DRAIN | SWITCHING | 70W Tc | TO-252AA | 2A | 4A | 6Ohm | 100 mJ | 800V | N-Channel | 440pF @ 25V | 6 Ω @ 1A, 10V | 5.5V @ 50μA | 2A Tc | 10.6nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| IXTP182N055T | IXYS | $1.50 |
Min: 1 Mult: 1 |
download | TrenchMV™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixta182n055t-datasheets-7499.pdf | TO-220-3 | 3 | 3 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 360W | 1 | Not Qualified | 35ns | 38 ns | 53 ns | 182A | SILICON | DRAIN | SWITCHING | 360W Tc | TO-220AB | 490A | 0.005Ohm | 1000 mJ | 55V | N-Channel | 4850pF @ 25V | 5m Ω @ 25A, 10V | 4V @ 250μA | 182A Tc | 114nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IXFR12N100 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1kV | 12A | ISOPLUS247™ | Lead Free | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 250W | SINGLE | NOT SPECIFIED | 3 | 150°C | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 10A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 1000V | 1000V | 48A | N-Channel | 2900pF @ 25V | 1.1 Ω @ 6A, 10V | 5.5V @ 4mA | 10A Tc | 90nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFE24N100 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2002 | https://pdf.utmel.com/r/datasheets/ixys-ixfe23n100-datasheets-1164.pdf | SOT-227-4, miniBLOC | 4 | 4 | yes | AVALANCHE RATED | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 500W | 1 | FET General Purpose Power | Not Qualified | 35ns | 21 ns | 75 ns | 22A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 1000V | 500W Tc | 96A | 0.39Ohm | 3000 mJ | 1kV | N-Channel | 7000pF @ 25V | 390m Ω @ 12A, 10V | 5V @ 8mA | 22A Tc | 250nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IXFE44N60 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2002 | https://pdf.utmel.com/r/datasheets/ixys-ixfe44n60-datasheets-8502.pdf | SOT-227-4, miniBLOC | 4 | 4 | yes | AVALANCHE RATED | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 500W | 1 | FET General Purpose Power | Not Qualified | 55ns | 45 ns | 110 ns | 41A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 500W Tc | 176A | 0.13Ohm | 3000 mJ | 600V | N-Channel | 8900pF @ 25V | 130m Ω @ 22A, 10V | 4.5V @ 8mA | 41A Tc | 330nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IXFK33N50 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfk33n50-datasheets-8544.pdf | TO-264-3, TO-264AA | Lead Free | 3 | 150mOhm | 3 | yes | AVALANCHE RATED | No | 3 | Single | 416W | 1 | FET General Purpose Power | 42ns | 23 ns | 110 ns | 33A | 20V | SILICON | DRAIN | SWITCHING | 416W Tc | 2500 mJ | 500V | N-Channel | 5700pF @ 25V | 160m Ω @ 16.5A, 10V | 4V @ 4mA | 33A Tc | 227nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IXFR180N07 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfr180n07-datasheets-8644.pdf | ISOPLUS247™ | Lead Free | 3 | 8 Weeks | 6MOhm | 3 | yes | EAR99 | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 400W | 1 | FET General Purpose Power | Not Qualified | 90ns | 55 ns | 140 ns | 180A | 20V | SILICON | ISOLATED | SWITCHING | 417W Tc | 720A | 70V | N-Channel | 9400pF @ 25V | 6m Ω @ 500mA, 10V | 4V @ 8mA | 180A Tc | 420nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IXFX14N100 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfx15n100-datasheets-8076.pdf | TO-247-3 | 3 | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 360W | 1 | FET General Purpose Power | Not Qualified | 30ns | 30 ns | 120 ns | 14A | 20V | SILICON | DRAIN | SWITCHING | 1000V | 360W Tc | 56A | 0.75Ohm | 1kV | N-Channel | 4500pF @ 25V | 750m Ω @ 500mA, 10V | 4.5V @ 4mA | 14A Tc | 220nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IXFR25N90 | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | ISOPLUS247™ | 25A | 900V | N-Channel | 25A Tc | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXUC100N055 | IXYS | $18.91 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixuc100n055-datasheets-8776.pdf | ISOPLUS220™ | 3 | No SVHC | 220 | yes | EAR99 | e3 | Matte Tin (Sn) | 260 | 3 | Single | 35 | 150W | 1 | Not Qualified | R-PSIP-T3 | 2.5kV | 115ns | 155 ns | 230 ns | 100A | 20V | 55V | SILICON | ISOLATED | SWITCHING | 4V | 150W Tc | TO-273AA | 80 ns | 0.0077Ohm | 500 mJ | 55V | N-Channel | 4 V | 7.7m Ω @ 80A, 10V | 4V @ 1mA | 100A Tc | 100nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IXTU2N80P | IXYS |
Min: 1 Mult: 1 |
download | PolarHV™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixta2n80p-datasheets-7550.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | yes | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 70W | 1 | Not Qualified | R-PSIP-T3 | 35ns | 28 ns | 53 ns | 2A | 30V | SILICON | DRAIN | SWITCHING | 70W Tc | 2A | 4A | 6Ohm | 100 mJ | 800V | N-Channel | 440pF @ 25V | 6 Ω @ 1A, 10V | 5.5V @ 50μA | 2A Tc | 10.6nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||
| IXTN320N10T | IXYS |
Min: 1 Mult: 1 |
download | Chassis Mount | Chassis Mount | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixtn320n10t-datasheets-4250.pdf | SOT-227-4, miniBLOC | Lead Free | 4 | 4 | yes | EAR99 | AVALANCHE RATED, UL RECOGNIZED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | 175°C | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | 320A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 100V | 100V | 680W Tc | 700A | 0.0032Ohm | 2300 mJ | N-Channel | 4.5V @ 1mA | 320A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH66N20Q | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfh66n20q-datasheets-4327.pdf | TO-247-3 | Lead Free | 3 | 3 | yes | EAR99 | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 400W | 1 | Not Qualified | 18ns | 14 ns | 50 ns | 66A | 30V | SILICON | DRAIN | SWITCHING | 400W Tc | TO-247AD | 264A | 0.04Ohm | 1500 mJ | 200V | N-Channel | 3700pF @ 25V | 40m Ω @ 33A, 10V | 4V @ 4mA | 66A Tc | 105nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||
| IXFN55N50 | IXYS | $36.98 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | Screw | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | SOT-227-4, miniBLOC | Lead Free | 4 | 6 Weeks | 46g | No SVHC | 80mOhm | 3 | yes | EAR99 | AVALANCHE RATED | No | Nickel (Ni) | UPPER | UNSPECIFIED | 4 | Single | 600W | 1 | FET General Purpose Power | R-PUFM-X4 | 2.5kV | 60ns | 45 ns | 120 ns | 55A | 20V | 500V | SILICON | DRAIN | SWITCHING | 4.5V | 625W Tc | 250 ns | 220A | 500V | N-Channel | 9400pF @ 25V | 4.5 V | 90m Ω @ 27.5A, 10V | 4.5V @ 8mA | 55A Tc | 330nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IXFN52N90P | IXYS |
Min: 1 Mult: 1 |
download | Polar™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixfn52n90p-datasheets-4549.pdf | SOT-227-4, miniBLOC | 4 | yes | AVALANCHE RATED, UL RECOGNIZED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PUFM-X4 | 43A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 900V | 900V | 890W Tc | 104A | 0.16Ohm | 2000 mJ | N-Channel | 19000pF @ 25V | 160m Ω @ 26A, 10V | 6.5V @ 1mA | 43A Tc | 308nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IXTY12N06TTRL | IXYS |
Min: 1 Mult: 1 |
download | TrenchMV™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixty12n06ttrl-datasheets-8314.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | AVALANCHE RATED, ULTRA LOW RESISTANCE | unknown | SINGLE | GULL WING | 1 | R-PSSO-G2 | 12A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 33W Tc | TO-252AA | 30A | 0.085Ohm | 20 mJ | N-Channel | 256pF @ 25V | 85m Ω @ 6A, 10V | 4V @ 25μA | 12A Tc | 3.4nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFJ32N50 | IXYS |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 3 | yes | AVALANCHE RATED | compliant | e3 | Matte Tin (Sn) | NO | SINGLE | THROUGH-HOLE | NOT SPECIFIED | 4 | 150°C | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 360W | 500V | METAL-OXIDE SEMICONDUCTOR | TO-268AA | 32A | 128A | 0.15Ohm | 1500 mJ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFT52N30Q TRL | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/ixys-ixft52n30qtrl-datasheets-3306.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 300V | 360W Tc | N-Channel | 5300pF @ 25V | 60m Ω @ 26A, 10V | 4V @ 4mA | 52A Tc | 150nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH1799 | IXYS |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTM11N80 | IXYS |
Min: 1 Mult: 1 |
download | GigaMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | TO-204AA, TO-3 | 2 | yes | NO | BOTTOM | PIN/PEG | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | O-MBFM-P2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 800V | 800V | 300W Tc | 11A | 44A | 0.95Ohm | N-Channel | 4500pF @ 25V | 950m Ω @ 5.5A, 10V | 4.5V @ 250μA | 11A Tc | 170nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFM1633 | IXYS |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EVDD430YI | IXYS |
Min: 1 Mult: 1 |
download | Power Management | Box | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/ixys-evdd430ci-datasheets-5891.pdf | Yes | FET Driver (External FET) | IXDD430YI | Board(s) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EVLB001 | IXYS |
Min: 1 Mult: 1 |
download | Opto/Lighting | Box | 1 (Unlimited) | RoHS Compliant | Yes | Ballast Control | IXI859, IXTP3N50P, IXTP02N50D, IXD611S | Board(s) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFA56N30X3 | IXYS | $7.46 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfh56n30x3-datasheets-4872.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 19 Weeks | 300V | 320W Tc | N-Channel | 3.75nF @ 25V | 27m Ω @ 28A, 10V | 4.5V @ 1.5mA | 56A Tc | 56nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTX32P60P | IXYS |
Min: 1 Mult: 1 |
download | PolarP™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixtk32p60p-datasheets-0724.pdf | TO-247-3 | 3 | 28 Weeks | 3 | yes | AVALANCHE RATED | unknown | e1 | TIN SILVER COPPER | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Other Transistors | Not Qualified | 32A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 890W Tc | 96A | P-Channel | 11100pF @ 25V | 350m Ω @ 16A, 10V | 4V @ 1mA | 32A Tc | 196nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IXFP30N25X3 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfy30n25x3-datasheets-4884.pdf | TO-220-3 | 19 Weeks | 250V | 176W Tc | N-Channel | 1450pF @ 25V | 60m Ω @ 15A, 10V | 4.5V @ 500μA | 30A Tc | 21nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFK98N50P3 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, Polar3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfx98n50p3-datasheets-8690.pdf | TO-264-3, TO-264AA | 19.96mm | 26.16mm | 5.13mm | 3 | 30 Weeks | No SVHC | 3 | EAR99 | AVALANCHE RATED | unknown | 3 | Single | 1.3kW | 1 | FET General Purpose Power | Not Qualified | 35 ns | 8ns | 6 ns | 65 ns | 98A | 30V | SILICON | DRAIN | SWITCHING | 5V | 1300W Tc | 245A | 0.05Ohm | 2000 mJ | 500V | N-Channel | 13100pF @ 25V | 50m Ω @ 500mA, 10V | 5V @ 8mA | 98A Tc | 197nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| IXFH70N20Q3 | IXYS | $10.90 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixft70n20q3-datasheets-4448.pdf | TO-247-3 | 16.26mm | 16.26mm | 5.3mm | Lead Free | 3 | 30 Weeks | 40MOhm | 3 | EAR99 | AVALANCHE RATED | 3 | Single | 690W | 1 | FET General Purpose Power | Not Qualified | 17 ns | 10ns | 9 ns | 24 ns | 70A | 30V | SILICON | DRAIN | SWITCHING | 690W Tc | 210A | 1500 mJ | 200V | N-Channel | 3150pF @ 25V | 40m Ω @ 35A, 10V | 6.5V @ 4mA | 70A Tc | 67nC @ 10V | 10V | ±20V |
