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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Type | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Frequency | Operating Mode | Input Type | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | Evaluation Kit | JESD-609 Code | Terminal Finish | Polarity | Reference Standard | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Base Part Number | Pin Count | Operating Temperature (Max) | Supply Voltage-Min (Vsup) | Analog IC - Other Type | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Supply Current-Max (Isup) | Qualification Status | JESD-30 Code | Supplier Device Package | Output Current | Circuit Type | Forward Current | Forward Voltage | Output Type | Isolation Voltage | On-State Current-Max | Max Surge Current | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Drain to Source Voltage (Vdss) | Function | Application | DS Breakdown Voltage-Min | FET Technology | Leakage Current (Max) | Number of Outputs | Speed | Output Configuration | Power - Max | Diode Element Material | Power Dissipation-Max | Rep Pk Reverse Voltage-Max | Hold Current | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Collector Emitter Breakdown Voltage | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Collector Emitter Voltage (VCEO) | Max Collector Current | Topology | Synchronous Rectifier | Non-Repetitive Pk On-state Cur | Repetitive Peak Reverse Voltage | Trigger Device Type | Voltage - Off State | Utilized IC / Part | Repetitive Peak Off-state Voltage | Current - On State (It (RMS)) (Max) | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Current - Hold (Ih) (Max) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Control Features | Voltage - DC Reverse (Vr) (Max) | Drain to Source Breakdown Voltage | Voltage - Gate Trigger (Vgt) (Max) | Current - Non Rep. Surge 50, 60Hz (Itsm) | Current - Gate Trigger (Igt) (Max) | Current - On State (It (AV)) (Max) | SCR Type | Voltage - On State (Vtm) (Max) | RMS On-state Current-Max | Desc. of Quick-Connects | Voltage - Supply (Vcc/Vdd) | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation Ambient-Max | Supplied Contents | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Test Condition | Frequency - Switching | Structure | Number of SCRs, Diodes | Current - Average Rectified (Io) | Operating Temperature - Junction | Diode Configuration | Vce(on) (Max) @ Vge, Ic | IGBT Type | Gate Charge | Current - Collector Pulsed (Icm) | Td (on/off) @ 25°C | Switching Energy | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Duty Cycle (Max) |
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| IXFT58N20Q TRL | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/ixys-ixft58n20qtrl-datasheets-3348.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 200V | 300W Tc | N-Channel | 3600pF @ 25V | 40m Ω @ 29A, 10V | 4V @ 4mA | 58A Tc | 140nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTM12N100 | IXYS |
Min: 1 Mult: 1 |
download | GigaMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixth12n100-datasheets-0595.pdf | TO-204AA, TO-3 | 2 | yes | NO | BOTTOM | PIN/PEG | NOT SPECIFIED | 2 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | O-MBFM-P2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1000V | 1000V | 300W Tc | 12A | 48A | N-Channel | 4000pF @ 25V | 1.05 Ω @ 6A, 10V | 4.5V @ 250μA | 12A Tc | 170nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTM15N60 | IXYS |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2 | NO | BOTTOM | PIN/PEG | 150°C | 1 | FET General Purpose Power | Not Qualified | O-MBFM-P2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 250W | 600V | METAL-OXIDE SEMICONDUCTOR | TO-204AE | 15A | 0.5Ohm | 300W | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXMS150PSI | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | -40°C~85°C TA | Tube | Not Applicable | CMOS | 400kHz | RoHS Compliant | 1998 | /files/ixys-ixms150psi-datasheets-1756.pdf&product=ixys-ixms150psi-7812344 | 24-DIP (0.300, 7.62mm) | Contains Lead | 24 | yes | EAR99 | NO | DUAL | 12V | IXMS150 | 10.8V | STEPPER MOTOR CONTROLLER | 45mA | 10mA | Transistor Driver | Step-Up/Step-Down | 2 | Positive | Half-Bridge | No | Dead Time Control, Enable, Frequency Control | 12V | 10kHz~400kHz | 95% | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EVDN404 | IXYS |
Min: 1 Mult: 1 |
download | Power Management | 1 (Unlimited) | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-evdi404-datasheets-5921.pdf | Yes | FET Driver (External FET) | IXDN404 | Board(s) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMA100A1600NB | IXYS |
Min: 1 Mult: 1 |
download | 28 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTT90P10P | IXYS | $10.83 |
Min: 1 Mult: 1 |
download | PolarP™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixtt90p10p-datasheets-8682.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | 24 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | unknown | e3 | PURE TIN | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | Other Transistors | Not Qualified | R-PSSO-G2 | 90A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 462W Tc | 225A | 0.025Ohm | 2500 mJ | P-Channel | 5800pF @ 25V | 25m Ω @ 45A, 10V | 4V @ 250μA | 90A Tc | 120nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFN27N80 | IXYS | $5.12 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfk27n80-datasheets-0806.pdf | 800V | 27A | SOT-227-4, miniBLOC | Lead Free | 4 | 8 Weeks | 300mOhm | 4 | yes | AVALANCHE RATED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 520W | 1 | FET General Purpose Power | Not Qualified | 80ns | 40 ns | 75 ns | 27A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 520W Tc | 250 ns | 108A | 800V | N-Channel | 9740pF @ 25V | 300m Ω @ 13.5A, 10V | 4.5V @ 8mA | 27A Tc | 400nC @ 10V | 10V 15V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH8P50 | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/ixys-ixtt8p50-datasheets-3920.pdf | -500V | -8A | TO-247-3 | Lead Free | 3 | 28 Weeks | 1.2Ohm | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 180W | 1 | Other Transistors | Not Qualified | 27ns | 35 ns | 35 ns | 8A | 20V | SILICON | DRAIN | SWITCHING | 500V | 180W Tc | TO-247AD | 8A | -500V | P-Channel | 3400pF @ 25V | 1.2 Ω @ 4A, 10V | 5V @ 250μA | 8A Tc | 130nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTX120N65X2 | IXYS | $43.58 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/ixys-ixtx120n65x2-datasheets-2474.pdf | TO-247-3 | 15 Weeks | EAR99 | unknown | NOT SPECIFIED | NOT SPECIFIED | 120A | 650V | 1250W Tc | N-Channel | 13600pF @ 25V | 24m Ω @ 60A, 10V | 4.5V @ 8mA | 120A Tc | 240nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH90N20X3 | IXYS | $47.16 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfp90n20x3-datasheets-4520.pdf | TO-247-3 | 19 Weeks | 200V | 390W Tc | N-Channel | 5420pF @ 25V | 12.8m Ω @ 45A, 10V | 4.5V @ 1.5mA | 90A Tc | 78nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH150N30X3 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfk150n30x3-datasheets-2094.pdf | TO-247-3 | 19 Weeks | 300V | 890W Tc | N-Channel | 13.1nF @ 25V | 8.3m Ω @ 75A, 10V | 4.5V @ 4mA | 150A Tc | 254nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DGS20-018AS-TUBE | IXYS |
Min: 1 Mult: 1 |
Surface Mount | RoHS Compliant | TO-263-3 | 180V | 23A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSEP60-06AT | IXYS |
Min: 1 Mult: 1 |
Surface Mount | 175°C | -55°C | AVALANCHE | RoHS Compliant | TO-268-3 | Lead Free | 2 | yes | EAR99 | FREE WHEELING DIODE, SNUBBER DIODE | 8541.10.00.80 | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | R-PSSO-G2 | 2.04V | 600A | CATHODE | GENERAL PURPOSE | SILICON | 650μA | 600V | 600A | 600V | TO-268AA | 35 ns | 35 ns | RECTIFIER DIODE | 600V | 60A | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DPG10IM300UC | IXYS | $9.32 |
Min: 1 Mult: 1 |
Surface Mount | Tape and Reel | 175°C | -55°C | RoHS Compliant | TO-252 | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE | 8541.10.00.80 | e3 | PURE TIN | GULL WING | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | R-PSSO-G2 | 1.45V | 140A | CATHODE | FAST SOFT RECOVERY | SILICON | 1μA | 140A | 300V | 35 ns | 35 ns | RECTIFIER DIODE | 300V | 10A | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CMA50E1600TZ-TRL | IXYS |
Min: 1 Mult: 1 |
download | CMA50E1600TZ | Surface Mount | -40°C~150°C TJ | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 20 Weeks | SCR | 1.6kV | 79A | 100mA | 1.5V | 550A 595A | 50mA | 50A | Standard Recovery | 1.3V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VTO70-14IO7 | IXYS |
Min: 1 Mult: 1 |
download | Chassis Mount | Chassis Mount | -40°C~125°C TJ | Bulk | 1 (Unlimited) | RoHS Compliant | 2000 | /files/ixys-vvzf7008io7-datasheets-4736.pdf | 70A | FO-T-A | 11 | yes | FAST | 8541.30.00.80 | e4 | Gold (Au) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | VTO | NOT SPECIFIED | 6 | Silicon Controlled Rectifiers | Not Qualified | R-XUFM-D11 | SCR | 70000A | 3 PHASE BRIDGE | ISOLATED | 5mA | 200mA | 550 A | 1400V | SCR | 1.4kV | 1400V | 200mA | 1.5V | 550A 600A | 100mA | 36A | 3AK-CA-CK | Bridge, 3-Phase - All SCRs | 6 SCRs | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSEI60-12A | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | Not Applicable | 150°C | -40°C | ROHS3 Compliant | 2000 | /files/ixys-dsei6012a-datasheets-5983.pdf&product=ixys-dsei6012a-5831756 | 1.2kV | 52A | TO-247-2 | 16.26mm | 21.46mm | 5.3mm | Lead Free | 2 | 20 Weeks | No SVHC | 2 | yes | EAR99 | SNUBBER DIODE, FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | 3 | Single | 189W | 1 | Rectifier Diodes | 52A | 52A | 2.55V | 450A | CATHODE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 450A | 2.2mA | 1.2kV | 450A | 1.2kV | 60 ns | 60 ns | Standard | 1.2kV | 52A | 1 | 1200V | 2.2mA @ 1200V | 2.55V @ 60A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXYH40N65C3D1 | IXYS |
Min: 1 Mult: 1 |
download | GenX3™, XPT™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/ixys-ixyq40n65c3d1-datasheets-0445.pdf | TO-247-3 | 28 Weeks | 300W | 300W | 120 ns | 650V | 2.35V | 80A | 400V, 30A, 10 Ω, 15V | 2.35V @ 15V, 40A | PT | 66nC | 180A | 23ns/110ns | 830μJ (on), 360μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MDMA280P1600YD | IXYS |
Min: 1 Mult: 1 |
download | MDMA280P1600YD | Chassis Mount | Y4-M6 | 3 | 24 Weeks | EAR99 | LOW LEAKAGE CURRENT, PD-CASE, UL RECOGNIZED | IEC-60747 | NO | UPPER | UNSPECIFIED | 150°C | 2 | R-PUFM-X3 | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 960W | 1600V | 1000μA | Standard | 96400A | 1 | 1600V | 1mA @ 1600V | 1.14V @ 280A | 280A | -40°C~150°C | 1 Pair Series Connection | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HTZ150C6K | IXYS |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | Bulk | 1 (Unlimited) | 180°C | -40°C | ROHS3 Compliant | 2002 | https://pdf.utmel.com/r/datasheets/ixys-htz150c6k-datasheets-7509.pdf | Module | 3 | 3 | yes | EAR99 | 8541.10.00.80 | UPPER | UNSPECIFIED | NOT SPECIFIED | HTZ150 | 3 | NOT SPECIFIED | 2 | Not Qualified | 6V | HIGH VOLTAGE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 100A | 6kV | Standard | 6kV | 3A | 1 | 3A | 6000V | 500μA @ 6000V | 6V @ 2A | 1 Pair Series Connection | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HTZ260G22K | IXYS |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | Bulk | 1 (Unlimited) | 180°C | -40°C | ROHS3 Compliant | 2002 | https://pdf.utmel.com/r/datasheets/ixys-htz260g14k-datasheets-7669.pdf | Module | 3 | 3 | yes | EAR99 | 8541.10.00.80 | UPPER | UNSPECIFIED | NOT SPECIFIED | HTZ260 | 3 | NOT SPECIFIED | 2 | Not Qualified | 16V | HIGH VOLTAGE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 200A | 22.4kV | Standard | 22.4kV | 4.7A | 1 | 22400V | 500μA @ 22400V | 16V @ 12A | 1 Pair Series Connection | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HTZ110A25K | IXYS |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | Bulk | 1 (Unlimited) | 180°C | -40°C | ROHS3 Compliant | 2002 | https://pdf.utmel.com/r/datasheets/ixys-htz110a16k-datasheets-7630.pdf | Module | 3 | 3 | yes | EAR99 | 8541.10.00.80 | UPPER | UNSPECIFIED | NOT SPECIFIED | HTZ110 | 3 | NOT SPECIFIED | 2 | Not Qualified | 18.3V | HIGH VOLTAGE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 200A | 25kV | Standard | 25kV | 3.5A | 1 | 25000V | 500μA @ 25000V | 18.3V @ 12A | 1 Pair Series Connection | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HTZ280H20K | IXYS |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | Bulk | 1 (Unlimited) | 180°C | -40°C | ROHS3 Compliant | 2002 | https://pdf.utmel.com/r/datasheets/ixys-htz280h28k-datasheets-7694.pdf | Module | 3 | 3 | yes | EAR99 | 8541.10.00.80 | UPPER | UNSPECIFIED | NOT SPECIFIED | HTZ280 | 3 | NOT SPECIFIED | 2 | Not Qualified | 23V | HIGH VOLTAGE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 200A | 20kV | Standard | 20kV | 4.7A | 1 | 20000V | 500μA @ 20000V | 23V @ 12A | 1 Pair Series Connection | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DFE25I600HA | IXYS |
Min: 1 Mult: 1 |
download | DFE25I600HA | Through Hole | AVALANCHE | TO-247-2 | 2 | 20 Weeks | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE, PD-CASE | IEC-60747 | NO | SINGLE | NOT SPECIFIED | 125°C | NOT SPECIFIED | 1 | R-PSFM-T2 | ISOLATED | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 105W | 600V | 100μA | TO-247AD | 50ns | Standard | 240A | 1 | 600V | 100μA @ 600V | 1.4V @ 25A | 25A | -55°C~150°C | 1 Independent | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DFE240X600NA | IXYS |
Min: 1 Mult: 1 |
download | DFE240X600NA | Chassis Mount | AVALANCHE | SOT-227-4, miniBLOC | 4 | 28 Weeks | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE, PD-CASE | IEC-60747 | NO | UPPER | UNSPECIFIED | NOT SPECIFIED | 125°C | NOT SPECIFIED | 2 | R-PUFM-X4 | ISOLATED | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 312W | 600V | 3000μA | 80ns | Standard | 1200A | 1 | 600V | 3mA @ 600V | 1.3V @ 120A | 120A | -40°C~150°C | 2 Independent | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMA200XA1600NA | IXYS |
Min: 1 Mult: 1 |
download | DMA200XA1600NA | Chassis Mount | SOT-227-4, miniBLOC | 4 | 16 Weeks | EAR99 | LOW LEAKAGE CURRENT, PD-CASE, UL RECOGNIZED | IEC-60747 | NO | UPPER | UNSPECIFIED | 150°C | 2 | R-PUFM-X4 | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 415W | 1600V | 200μA | Standard | 1380A | 1 | 1600V | 200μA @ 1600V | 1.24V @ 100A | 100A | -40°C~150°C | 1 Pair Series Connection | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSEP2X25-12C | IXYS | $26.71 |
Min: 1 Mult: 1 |
download | HiPerDynFRED™ | Chassis Mount, Panel, Screw | Chassis Mount | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2011 | /files/ixys-dsep2x2512c-datasheets-7584.pdf | SOT-227-4, miniBLOC | 38.23mm | 12.22mm | 25.42mm | Lead Free | 4 | 28 Weeks | No SVHC | 4 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE, UL RECOGNIZED | No | Nickel (Ni) | UPPER | UNSPECIFIED | DSEP2X | 4 | 4 | Other Diodes | 25A | 5.92V | 250A | ISOLATED | SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 210W | 250A | 250μA | 1.2kV | 250A | 1.2kV | 15 ns | 20 ns | Standard | 1.2kV | 25A | 1 | 1200V | 250μA @ 1200V | 4.71V @ 25A | 2 Independent | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MDA600-16N1 | IXYS |
Min: 1 Mult: 1 |
download | Chassis Mount | Chassis Mount | Tray | 1 (Unlimited) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/ixys-mdd60018n1-datasheets-7995.pdf | Module | 500 | MD*600 | Common Anode | Module | Standard Recovery >500ns, > 200mA (Io) | 1.6kV | 18 μs | Standard | 1.6kV | 883A | 1600V | 50mA @ 1600V | 880mV @ 500A | 883A | 1 Pair Common Anode | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSS17-06CR | IXYS |
Min: 1 Mult: 1 |
download | HiPerDyn™ | Through Hole | Through Hole | Tube | 175°C | -55°C | ROHS3 Compliant | 2004 | /files/ixys-dss1706cr-datasheets-7371.pdf&product=ixys-dss1706cr-5990016 | 600V | 17A | ISOPLUS247™ | Lead Free | 2 | 28 Weeks | 5.3g | No SVHC | 2 | yes | EAR99 | SNUBBER DIODE, FREEWHEELING DIODE | 8541.10.00.80 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | Standard | 105W | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | 17A | 17A | 3.32V | 2.5kV | ISOLATED | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 200A | 500μA | 600V | 200A | 45 ns | Schottky | 600V | 17A | 1 | 500μA @ 600V | 3.32V @ 15A | -55°C~175°C |
