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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Isolation Voltage | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IXTP15P15T | IXYS |
Min: 1 Mult: 1 |
download | TrenchP™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/ixys-ixty15p15t-datasheets-2144.pdf | TO-220-3 | 3 | 24 Weeks | EAR99 | AVALANCHE RATED | SINGLE | 3 | 1 | Other Transistors | Not Qualified | R-PSFM-T3 | 15A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150V | 150V | 150W Tc | TO-220AB | 45A | 0.24Ohm | 300 mJ | P-Channel | 3650pF @ 25V | 240m Ω @ 7A, 10V | 4.5V @ 250μA | 15A Tc | 48nC @ 10V | 10V | ±15V | |||||||||||||||||||||||||||||||||||||||||
| IXTA08N100D2HV | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | 2 (1 Year) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixta08n100d2hv-datasheets-2565.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 24 Weeks | not_compliant | e3 | Matte Tin (Sn) | YES | SINGLE | GULL WING | 4 | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1000V | 60W Tc | N-Channel | 325pF @ 25V | 21 Ω @ 400mA, 0V | 4V @ 25μA | 800mA Tj | 14.6nC @ 5V | Depletion Mode | 0V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA1R6N100D2HV | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/ixys-ixta1r6n100d2hv-datasheets-2908.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 24 Weeks | compliant | 1000V | 100W Tc | N-Channel | 645pF @ 10V | 10 Ω @ 800mA, 0V | 4.5V @ 100μA | 1.6A Tj | 27nC @ 5V | Depletion Mode | 0V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA200N055T2-TRL | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 28 Weeks | 55V | 360W Tc | N-Channel | 6970pF @ 25V | 4.2m Ω @ 50A, 10V | 4V @ 250μA | 200A Tc | 109nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA4N65X2 | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/ixys-ixta8n65x2-datasheets-2725.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 15 Weeks | EAR99 | not_compliant | NOT SPECIFIED | NOT SPECIFIED | 4A | 650V | 80W Tc | N-Channel | 455pF @ 25V | 850m Ω @ 2A, 10V | 5V @ 250μA | 4A Tc | 8.3nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFX55N50F | IXYS | $3.26 |
Min: 1 Mult: 1 |
download | HiPerRF™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixfx55n50f-datasheets-6230.pdf | 500V | 55A | TO-247-3 | Lead Free | 3 | 10 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 560W | 1 | Not Qualified | 20ns | 9.6 ns | 45 ns | 55A | 20V | SILICON | DRAIN | SWITCHING | 560W Tc | 220A | 0.0085Ohm | 500V | N-Channel | 6700pF @ 25V | 85m Ω @ 27.5A, 10V | 5.5V @ 8mA | 55A Tc | 195nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IXTV22N50P | IXYS |
Min: 1 Mult: 1 |
download | PolarHV™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtq22n50p-datasheets-2023.pdf | 500V | 22A | TO-220-3, Short Tab | Lead Free | 3 | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 350W | 1 | FET General Purpose Power | Not Qualified | 27ns | 21 ns | 75 ns | 22A | 30V | SILICON | DRAIN | SWITCHING | 350W Tc | 50A | 0.27Ohm | 750 mJ | 500V | N-Channel | 2630pF @ 25V | 270m Ω @ 11A, 10V | 5.5V @ 250μA | 22A Tc | 50nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||
| IXFC26N50P | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfc26n50p-datasheets-5861.pdf | 500V | 26A | ISOPLUS220™ | Lead Free | 3 | 3 | yes | AVALANCHE RATED, UL RECOGNIZED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 130W | 1 | Not Qualified | 25ns | 20 ns | 58 ns | 15A | 30V | SILICON | ISOLATED | SWITCHING | 130W Tc | 78A | 0.26Ohm | 1000 mJ | 500V | N-Channel | 3600pF @ 25V | 260m Ω @ 13A, 10V | 5.5V @ 4mA | 15A Tc | 65nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| IXFV22N60P | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfh22n60p-datasheets-3796.pdf | 600V | 22A | TO-220-3, Short Tab | Lead Free | 3 | 350MOhm | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 400W | 1 | Not Qualified | 20ns | 23 ns | 60 ns | 22A | 30V | SILICON | DRAIN | SWITCHING | 400W Tc | 66A | 1000 mJ | 600V | N-Channel | 3600pF @ 25V | 350m Ω @ 11A, 10V | 5.5V @ 4mA | 22A Tc | 58nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| IXFC22N60P | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfc22n60p-datasheets-5996.pdf | 600V | 22A | ISOPLUS220™ | Lead Free | 3 | 3 | yes | UL RECOGNIZED, AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 130W | 1 | Not Qualified | 20ns | 23 ns | 60 ns | 12A | 30V | SILICON | ISOLATED | SWITCHING | 130W Tc | 66A | 1000 mJ | 600V | N-Channel | 4000pF @ 25V | 360m Ω @ 11A, 10V | 5V @ 4mA | 12A Tc | 58nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| IXFV14N80P | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixft14n80p-datasheets-3875.pdf | TO-220-3, Short Tab | 3 | 220 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 400W | 1 | Not Qualified | R-PSIP-T3 | 62 ns | 14A | SILICON | DRAIN | SWITCHING | 400W Tc | 0.72Ohm | 500 mJ | 800V | N-Channel | 3900pF @ 25V | 720m Ω @ 500mA, 10V | 5.5V @ 4mA | 14A Tc | 61nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| IXTA160N075T | IXYS |
Min: 1 Mult: 1 |
download | TrenchMV™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixta160n075t-datasheets-7442.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | EAR99 | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 360W | 1 | Not Qualified | R-PSSO-G2 | 64ns | 60 ns | 60 ns | 160A | SILICON | DRAIN | SWITCHING | 360W Tc | 430A | 0.006Ohm | 750 mJ | 75V | N-Channel | 4950pF @ 25V | 6m Ω @ 25A, 10V | 4V @ 250μA | 160A Tc | 112nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IXFV74N20P | IXYS |
Min: 1 Mult: 1 |
download | PolarHT™ HiPerFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixfh74n20p-datasheets-3542.pdf | TO-220-3, Short Tab | 3 | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 480W | 1 | FET General Purpose Power | Not Qualified | 21ns | 21 ns | 60 ns | 74A | 20V | SILICON | DRAIN | SWITCHING | 480W Tc | 200A | 1000 mJ | 200V | N-Channel | 3300pF @ 25V | 34m Ω @ 37A, 10V | 5V @ 4mA | 74A Tc | 107nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IXTA220N055T7 | IXYS |
Min: 1 Mult: 1 |
download | TrenchMV™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixta220n055t7-datasheets-7522.pdf | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB | 6 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 430W | 1 | Not Qualified | R-PSFM-G6 | 62ns | 53 ns | 53 ns | 220A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 430W Tc | 600A | 0.004Ohm | 1000 mJ | 55V | N-Channel | 7200pF @ 25V | 4m Ω @ 25A, 10V | 4V @ 250μA | 220A Tc | 158nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IXTF230N085T | IXYS |
Min: 1 Mult: 1 |
download | TrenchMV™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/ixys-ixtf230n085t-datasheets-7556.pdf | i4-Pac™-5 | 5 | 5 | yes | EAR99 | AVALANCHE RATED, UL RECOGNIZED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 5 | Single | NOT SPECIFIED | 200W | 1 | Not Qualified | 49ns | 39 ns | 56 ns | 130A | SILICON | ISOLATED | SWITCHING | 200W Tc | 0.0049Ohm | 85V | N-Channel | 9900pF @ 25V | 5.3m Ω @ 50A, 10V | 4V @ 250mA | 130A Tc | 187nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IXTP160N075T | IXYS | $6.32 |
Min: 1 Mult: 1 |
download | TrenchMV™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixta160n075t-datasheets-7442.pdf | TO-220-3 | Lead Free | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 3 | Single | 360W | 1 | R-PSFM-T3 | 64ns | 60 ns | 60 ns | 160A | SILICON | DRAIN | SWITCHING | 360W Tc | TO-220AB | 430A | 0.006Ohm | 750 mJ | 75V | N-Channel | 4950pF @ 25V | 6m Ω @ 25A, 10V | 4V @ 250μA | 160A Tc | 112nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IXTP200N075T | IXYS |
Min: 1 Mult: 1 |
download | TrenchMV™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixta200n075t-datasheets-7507.pdf | TO-220-3 | 3 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 430W | 1 | Not Qualified | R-PSFM-T3 | 57ns | 52 ns | 54 ns | 200A | SILICON | DRAIN | SWITCHING | 430W Tc | TO-220AB | 540A | 0.005Ohm | 750 mJ | 75V | N-Channel | 6800pF @ 25V | 5m Ω @ 25A, 10V | 4V @ 250μA | 200A Tc | 160nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IXTQ200N075T | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixth200n075t-datasheets-7639.pdf | TO-3P-3, SC-65-3 | 3 | 3 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 430W | 1 | Not Qualified | 57ns | 52 ns | 54 ns | 200A | SILICON | DRAIN | SWITCHING | 430W Tc | 540A | 0.005Ohm | 750 mJ | 75V | N-Channel | 6800pF @ 25V | 5m Ω @ 25A, 10V | 4V @ 250μA | 200A Tc | 160nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IXTP70N085T | IXYS |
Min: 1 Mult: 1 |
download | TrenchMV™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixta70n085t-datasheets-7511.pdf | TO-220-3 | 3 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 176W | 1 | Not Qualified | R-PSFM-T3 | 72ns | 40 ns | 40 ns | 70A | SILICON | DRAIN | SWITCHING | 176W Tc | TO-220AB | 190A | 0.0135Ohm | 500 mJ | 85V | N-Channel | 2570pF @ 25V | 13.5m Ω @ 25A, 10V | 4V @ 50μA | 70A Tc | 59nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IXFT12N100Q | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfh12n100q-datasheets-0603.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 2 | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 23ns | 15 ns | 40 ns | 12A | 20V | SILICON | DRAIN | SWITCHING | 1000V | 300W Tc | 48A | 1kV | N-Channel | 2900pF @ 25V | 1.05 Ω @ 6A, 10V | 5.5V @ 4mA | 12A Tc | 90nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IXFN24N100 | IXYS | $41.98 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount, Panel, Screw | Chassis Mount | -55°C~150°C TJ | Tube | Not Applicable | Screw | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfn24n100-datasheets-5306.pdf | 1kV | 24A | SOT-227-4, miniBLOC | 38.23mm | 9.6mm | 25.42mm | Lead Free | 4 | 4 Weeks | 40g | No SVHC | 390mOhm | 3 | yes | EAR99 | AVALANCHE RATED, UL RECOGNIZED | No | Nickel (Ni) | UPPER | UNSPECIFIED | 4 | Single | 600W | 1 | FET General Purpose Power | R-PUFM-X4 | 2.5kV | 35 ns | 35ns | 21 ns | 75 ns | 24A | 20V | 1kV | SILICON | ISOLATED | SWITCHING | 1000V | 5.5V | 568W Tc | 250 ns | 250 ns | 96A | 1kV | N-Channel | 8700pF @ 25V | 5.5 V | 390m Ω @ 12A, 10V | 5.5V @ 8mA | 24A Tc | 267nC @ 10V | 10V | ±20V | |||||||||||||||||
| IXFE180N20 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfe180n20-datasheets-8464.pdf | SOT-227-4, miniBLOC | 4 | 4 | yes | EAR99 | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 500W | 1 | Not Qualified | 85ns | 36 ns | 180 ns | 158A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 500W Tc | 720A | 0.012Ohm | 200V | N-Channel | 14400pF @ 25V | 12m Ω @ 500mA, 10V | 4V @ 8mA | 158A Tc | 380nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IXFH150N17T | IXYS | $4.90 |
Min: 1 Mult: 1 |
download | TrenchHV™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixfh150n17t-datasheets-8516.pdf | TO-247-3 | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 830mW | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 30ns | 30 ns | 150A | 30V | SILICON | DRAIN | SWITCHING | 830W Tc | TO-247AD | 400A | 0.012Ohm | 1500 mJ | 175V | N-Channel | 9800pF @ 25V | 12m Ω @ 75A, 10V | 5V @ 3mA | 150A Tc | 155nC @ 10V | 10V | |||||||||||||||||||||||||||||||||||
| IXFN180N07 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfn180n07-datasheets-8616.pdf | SOT-227-4, miniBLOC | 4 | 4 | yes | AVALANCHE RATED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 520W | 1 | FET General Purpose Power | Not Qualified | 60ns | 60 ns | 100 ns | 180A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 520W Tc | 600A | 0.007Ohm | 2000 mJ | 70V | N-Channel | 9000pF @ 25V | 7m Ω @ 500mA, 10V | 4V @ 8mA | 180A Tc | 480nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IXFR55N50 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2002 | https://pdf.utmel.com/r/datasheets/ixys-ixfr50n50-datasheets-7374.pdf | ISOPLUS247™ | Lead Free | 3 | 90MOhm | 3 | yes | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 400W | 1 | FET General Purpose Power | 60ns | 45 ns | 120 ns | 48A | 20V | SILICON | ISOLATED | SWITCHING | 400W Tc | 220A | 500V | N-Channel | 9400pF @ 25V | 90m Ω @ 27.5A, 10V | 4.5V @ 8mA | 48A Tc | 330nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IXFR80N10Q | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfr80n10q-datasheets-8688.pdf | ISOPLUS247™ | 3 | 3 | yes | EAR99 | AVALANCHE RATED | e1 | TIN SILVER COPPER | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 310W | 1 | Not Qualified | 70ns | 30 ns | 68 ns | 76A | 20V | SILICON | ISOLATED | SWITCHING | 310W Tc | 0.015Ohm | 1500 mJ | 100V | N-Channel | 4500pF @ 25V | 15m Ω @ 76A, 10V | 76A Tc | 180nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IXFR80N15Q | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfr80n15q-datasheets-8713.pdf | ISOPLUS247™ | 3 | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 310W | 1 | FET General Purpose Power | Not Qualified | 55ns | 20 ns | 68 ns | 75A | 20V | SILICON | ISOLATED | SWITCHING | 310W Tc | 0.0225Ohm | 1500 mJ | 150V | N-Channel | 4600pF @ 25V | 22.5m Ω @ 40A, 10V | 4V @ 4mA | 75A Tc | 180nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IXFR80N20Q | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfr80n20q-datasheets-9024.pdf | ISOPLUS247™ | 3 | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 310W | 1 | FET General Purpose Power | Not Qualified | 50ns | 20 ns | 75 ns | 71A | 20V | SILICON | ISOLATED | SWITCHING | 310W Tc | 80A | 0.028Ohm | 1500 mJ | 200V | N-Channel | 4600pF @ 25V | 28m Ω @ 80A, 10V | 4V @ 4mA | 71A Tc | 180nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IXTV110N25TS | IXYS | $52.66 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixtv110n25ts-datasheets-0994.pdf | PLUS-220SMD | Lead Free | 2 | 3 | yes | EAR99 | AVALANCHE RATED | THROUGH-HOLE | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 694W | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T2 | 27ns | 27 ns | 60 ns | 110A | 20V | SILICON | DRAIN | SWITCHING | 694W Tc | 0.024Ohm | 1000 mJ | 250V | N-Channel | 9400pF @ 25V | 24m Ω @ 55A, 10V | 4.5V @ 1mA | 110A Tc | 157nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IXFH20N60Q | IXYS | $16.79 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2002 | https://pdf.utmel.com/r/datasheets/ixys-ixft20n60q-datasheets-7472.pdf | TO-247-3 | Lead Free | 3 | 350mOhm | 3 | yes | AVALANCHE RATED | No | 3 | Single | 300W | 1 | FET General Purpose Power | 20ns | 20 ns | 45 ns | 20A | 30V | SILICON | DRAIN | SWITCHING | 300W Tc | TO-247AD | 80A | 600V | N-Channel | 3300pF @ 25V | 350m Ω @ 10A, 10V | 4.5V @ 4mA | 20A Tc | 90nC @ 10V | 10V | ±30V |
