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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Resistance | Number of Pins | Number of Drivers | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | Nominal Supply Current | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Output Voltage | Output Current | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Power Dissipation-Max (Abs) | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| FDM21-05QC | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/ixys-fmd2105qc-datasheets-4340.pdf | i4-Pac™-5 | 5 | yes | HIGH RELIABILITY | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NO | SINGLE | NOT SPECIFIED | 5 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T5 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 500V | 500V | 21A | 0.22Ohm | N-Channel | 220m Ω @ 15A, 10V | 4.5V @ 250μA | 21A Tc | 95nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH14N100 | IXYS | $6.04 |
Min: 1 Mult: 1 |
download | MegaMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixth14n100-datasheets-0674.pdf | TO-247-3 | Lead Free | 3 | 30 Weeks | No SVHC | 820mOhm | 3 | yes | EAR99 | 8541.29.00.95 | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 360W | 1 | FET General Purpose Power | Not Qualified | 21ns | 36 ns | 80 ns | 14A | 20V | 1kV | SILICON | DRAIN | SWITCHING | 1000V | 4.5V | 360W Tc | TO-247AD | 56A | 1kV | N-Channel | 5650pF @ 25V | 4.5 V | 820m Ω @ 500mA, 10V | 4.5V @ 250μA | 14A Tc | 195nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| IXTX550N055T2 | IXYS |
Min: 1 Mult: 1 |
download | FRFET®, SupreMOS® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixtk550n055t2-datasheets-0709.pdf | TO-247-3 | 3 | 28 Weeks | 247 | 1 | yes | EAR99 | AVALANCHE RATED | unknown | 200A | e1 | TIN SILVER COPPER | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 55V | 550A | 45 ns | 40ns | 230 ns | 90 ns | 550A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1250W Tc | 3000 mJ | N-Channel | 40000pF @ 25V | 1.6m Ω @ 100A, 10V | 4V @ 250μA | 550A Tc | 595nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IXFX120N25 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | https://pdf.utmel.com/r/datasheets/ixys-ixfx120n25-datasheets-0756.pdf | TO-247-3 | 3 | 3 | yes | EAR99 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 560W | 1 | FET General Purpose Power | Not Qualified | 38ns | 35 ns | 175 ns | 120A | 20V | SILICON | DRAIN | SWITCHING | 560W Tc | 480A | 0.022Ohm | 250V | N-Channel | 9400pF @ 25V | 22m Ω @ 500mA, 10V | 4V @ 8mA | 120A Tc | 400nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IXFH23N80Q | IXYS | $3.18 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/ixys-ixft23n80q-datasheets-0782.pdf | TO-247-3 | 3 | 3 | yes | unknown | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 500W | 1 | Not Qualified | 27ns | 14 ns | 74 ns | 23A | 30V | SILICON | DRAIN | 500W Tc | TO-247AD | 92A | 0.4Ohm | 1500 mJ | 800V | N-Channel | 4900pF @ 25V | 420m Ω @ 500mA, 10V | 4.5V @ 3mA | 23A Tc | 130nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| IXFX24N90Q | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfx24n90q-datasheets-0826.pdf | TO-247-3 | 3 | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 500W | 1 | Not Qualified | 21ns | 12 ns | 60 ns | 24A | 20V | SILICON | DRAIN | SWITCHING | 500W Tc | 96A | 0.45Ohm | 2500 mJ | 900V | N-Channel | 5900pF @ 25V | 450m Ω @ 500mA, 10V | 4.5V @ 4mA | 24A Tc | 170nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IXFK24N90Q | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfx24n90q-datasheets-0826.pdf | TO-264-3, TO-264AA | 19.96mm | 26.16mm | 5.13mm | 3 | 3 | yes | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 500W | 1 | Not Qualified | 25 ns | 21ns | 12 ns | 60 ns | 24A | 20V | SILICON | DRAIN | SWITCHING | 500W Tc | 96A | 0.45Ohm | 2500 mJ | 900V | N-Channel | 5900pF @ 25V | 450m Ω @ 500mA, 10V | 4.5V @ 4mA | 24A Tc | 170nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IXTK120P20T | IXYS |
Min: 1 Mult: 1 |
download | TrenchP™ | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | TO-264-3, TO-264AA | Lead Free | 3 | 28 Weeks | EAR99 | AVALANCHE RATED | 1.04kW | SINGLE | 3 | 150°C | 1 | Other Transistors | R-PSFM-T3 | 120A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 400A | 0.03Ohm | 3000 mJ | P-Channel | 73000pF @ 25V | 30m Ω @ 60A, 10V | 4.5V @ 250μA | 120A Tc | 740nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IXFR24N90Q | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | ISOPLUS247™ | 3 | Single | 400mOhm | 900V | N-Channel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTF6N200P3 | IXYS |
Min: 1 Mult: 1 |
download | Polar™ | Through Hole | -55°C~150°C TJ | Tube | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/ixys-ixtf6n200p3-datasheets-0996.pdf | ISOPLUSi5-Pak™ | 28 Weeks | compliant | 2000V | 215W Tc | N-Channel | 3700pF @ 25V | 4.2 Ω @ 3A, 10V | 5V @ 250μA | 4A Tc | 143nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFR38N80Q2 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/ixys-ixfr38n80q2-datasheets-1028.pdf | ISOPLUS247™ | 3 | 3 | yes | UL RECOGNIZED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 416W | 1 | FET General Purpose Power | Not Qualified | 16ns | 12 ns | 60 ns | 28A | 30V | SILICON | ISOLATED | 416W Tc | 150A | 0.24Ohm | 4000 mJ | 800V | N-Channel | 8340pF @ 25V | 240m Ω @ 19A, 10V | 4.5V @ 8mA | 28A Tc | 190nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| IXTT20N50D | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixth20n50d-datasheets-9125.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 2 | 24 Weeks | 330mOhm | yes | No | e3 | Matte Tin (Sn) | GULL WING | 4 | Single | 400W | 1 | FET General Purpose Power | R-PSSO-G2 | 85ns | 75 ns | 110 ns | 20A | 30V | SILICON | DRAIN | SWITCHING | 400W Tc | 50A | 500V | N-Channel | 2500pF @ 25V | 330m Ω @ 10A, 10V | 3.5V @ 250mA | 20A Tc | 125nC @ 10V | Depletion Mode | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| MMIX1F160N30T | IXYS |
Min: 1 Mult: 1 |
download | GigaMOS™, HiPerFET™, TrenchT2™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-mmix1f160n30t-datasheets-1095.pdf | 24-PowerSMD, 21 Leads | 25.25mm | 5.7mm | 23.25mm | 21 | 30 Weeks | 21 | EAR99 | AVALANCHE RATED | DUAL | GULL WING | 21 | Single | 570W | 1 | FET General Purpose Power | 34 ns | 90 ns | 102A | 20V | SILICON | ISOLATED | SWITCHING | 300V | 300V | 570W Tc | 440A | 0.02Ohm | 3000 mJ | N-Channel | 2800pF @ 25V | 20m Ω @ 60A, 10V | 5V @ 8mA | 102A Tc | 335nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IXFN40N110Q3 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/ixys-ixfn40n110q3-datasheets-1142.pdf | SOT-227-4, miniBLOC | 24 Weeks | unknown | 35A | 1100V | 960W Tc | N-Channel | 14000pF @ 25V | 260m Ω @ 20A, 10V | 6.5V @ 8mA | 35A Tc | 300nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MMIX1F44N100Q3 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-mmix1f44n100q3-datasheets-1175.pdf | 24-PowerSMD, 21 Leads | 25.25mm | 5.7mm | 23.25mm | Lead Free | 21 | 30 Weeks | 24 | DUAL | GULL WING | 21 | Single | 1 | FET General Purpose Power | R-PDSO-G21 | 48 ns | 30ns | 28 ns | 66 ns | 30A | 30V | SILICON | ISOLATED | SWITCHING | 1000V | 694W Tc | 110A | 4000 mJ | 1kV | N-Channel | 13600pF @ 25V | 245m Ω @ 22A, 10V | 6.5V @ 8mA | 30A Tc | 264nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| IXTA16N50P-TRL | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 28 Weeks | 500V | 300W Tc | N-Channel | 2250pF @ 25V | 400m Ω @ 8A, 10V | 5.5V @ 250μA | 16A Tc | 43nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA27N20T | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 27A | 20V | N-Channel | 27A Tc | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTY1N120P | IXYS | $13.28 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 24 Weeks | 150°C | FET General Purpose Power | 1A | Single | 63W | 1200V | 1A | N-Channel | 1A Tc | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTU05N100 | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixtu05n100-datasheets-2119.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | yes | EAR99 | AVALANCHE RATED | unknown | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 40W | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 750mA | 30V | SILICON | DRAIN | SWITCHING | 1000V | 40W Tc | 0.75A | 3A | 100 mJ | 1kV | N-Channel | 260pF @ 25V | 17 Ω @ 375mA, 10V | 4.5V @ 250μA | 750mA Tc | 7.8nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| IXTP74N15T | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-220-3 | 74A | 150V | N-Channel | 74A Tc | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA130N065T2 | IXYS |
Min: 1 Mult: 1 |
download | TrenchT2™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixta130n065t2-datasheets-2316.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 24 Weeks | yes | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 130A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 65V | 65V | 250W Tc | 330A | 0.0066Ohm | 600 mJ | N-Channel | 4800pF @ 25V | 6.6m Ω @ 50A, 10V | 4V @ 250μA | 130A Tc | 79nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IXTP270N04T4 | IXYS |
Min: 1 Mult: 1 |
download | TrenchT4™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/ixys-ixth270n04t4-datasheets-0011.pdf | TO-220-3 | 24 Weeks | 270A | 40V | 375W Tc | N-Channel | 9140pF @ 25V | 2.4m Ω @ 50A, 10V | 4V @ 250μA | 270A Tc | 182nC @ 10V | 10V | ±15V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH36N20T | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-247-3 | 36A | 200V | N-Channel | 36A Tc | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA90N075T2-TRL | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 28 Weeks | 75V | 180W Tc | N-Channel | 3290pF @ 25V | 10m Ω @ 45A, 10V | 4V @ 250μA | 90A Tc | 54nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP2N65X2 | IXYS | $2.72 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/ixys-ixty2n65x2-datasheets-9221.pdf | TO-220-3 | 15 Weeks | EAR99 | not_compliant | NOT SPECIFIED | NOT SPECIFIED | 2A | 650V | 55W Tc | N-Channel | 180pF @ 25V | 2.3 Ω @ 1A, 10V | 5V @ 250μA | 2A Tc | 4.3nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA18P10T | IXYS | $0.85 |
Min: 1 Mult: 1 |
download | TrenchP™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixtp18p10t-datasheets-2547.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 28 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Other Transistors | Not Qualified | R-PSSO-G2 | 18A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 83W Tc | 60A | 0.12Ohm | 200 mJ | P-Channel | 2100pF @ 25V | 120m Ω @ 9A, 10V | 4.5V @ 250μA | 18A Tc | 39nC @ 10V | 10V | ±15V | |||||||||||||||||||||||||||||||||||||
| IXTA08N120P-TRL | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 28 Weeks | 1200V | 50W Tc | N-Channel | 333pF @ 25V | 25 Ω @ 400mA, 10V | 4.5V @ 50μA | 800mA Tc | 14nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP3N50P | IXYS |
Min: 1 Mult: 1 |
download | PolarHV™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixty3n50p-datasheets-5773.pdf | 500V | 3A | TO-220-3 | Lead Free | 3 | 8 Weeks | 3 | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 70W | 1 | Not Qualified | 15ns | 12 ns | 38 ns | 3.6A | 30V | SILICON | DRAIN | SWITCHING | 70W Tc | TO-220AB | 8A | 2Ohm | 180 mJ | 500V | N-Channel | 409pF @ 25V | 2 Ω @ 1.8A, 10V | 5.5V @ 50μA | 3.6A Tc | 9.3nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| IXFV26N50PS | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarHT™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfh26n50p-datasheets-9078.pdf | 500V | 26A | PLUS-220SMD | Lead Free | 2 | No SVHC | 3 | yes | EAR99 | AVALANCHE RATED | GULL WING | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 400W | 1 | Not Qualified | R-PSSO-G2 | 25ns | 20 ns | 58 ns | 26A | 30V | SILICON | DRAIN | SWITCHING | 5.5V | 400W Tc | 78A | 1000 mJ | 500V | N-Channel | 3600pF @ 25V | 230m Ω @ 13A, 10V | 5.5V @ 4mA | 26A Tc | 60nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| IXTI10N60P | IXYS |
Min: 1 Mult: 1 |
download | PolarHV™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixti10n60p-datasheets-5893.pdf | 600V | 10A | TO-262-3 Long Leads, I2Pak, TO-262AA | Lead Free | 3 | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 200W | 1 | Not Qualified | R-PSIP-T3 | 24ns | 18 ns | 55 ns | 10A | 30V | SILICON | DRAIN | SWITCHING | 200W Tc | TO-263 | 30A | 0.74Ohm | 500 mJ | 600V | N-Channel | 1610pF @ 25V | 740m Ω @ 5A, 10V | 5V @ 100μA | 10A Tc | 32nC @ 10V | 10V | ±30V |
