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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Manufacturer Package Identifier | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Forward Voltage | Turn On Delay Time | Max Surge Current | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | Application | DS Breakdown Voltage-Min | Threshold Voltage | Speed | Power - Max | Diode Element Material | Power Dissipation-Max | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Collector Emitter Breakdown Voltage | Collector Emitter Saturation Voltage | Average Rectified Current | Number of Phases | Turn On Time | Collector Emitter Voltage (VCEO) | Max Collector Current | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Input | Voltage - DC Reverse (Vr) (Max) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Turn Off Time-Nom (toff) | VCEsat-Max | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Gate-Emitter Voltage-Max | Current - Average Rectified (Io) | Operating Temperature - Junction | Current - Collector Cutoff (Max) | Vce(on) (Max) @ Vge, Ic | IGBT Type | NTC Thermistor | Input Capacitance (Cies) @ Vce | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| W1748LC180 | IXYS |
Min: 1 Mult: 1 |
download | Chassis Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | DO-200AB, B-PUK | 8 Weeks | W4 | Standard Recovery >500ns, > 200mA (Io) | Standard | 1800V | 30mA @ 1800V | 1.93V @ 3770A | 1748A | -40°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DGS17-030CS | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | RoHS Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | Fast Recovery =< 500ns, > 200mA (Io) | 23 ns | Schottky | 300V | 29A | 300V | 250μA @ 300V | 1.9V @ 7.5A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DS9-08F | IXYS |
Min: 1 Mult: 1 |
download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 180°C | -40°C | AVALANCHE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ds908f-datasheets-1709.pdf | DO-203AA, DO-4, Stud | 1 | 2 | yes | EAR99 | 8541.10.00.80 | UPPER | SOLDER LUG | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | O-MUPM-D1 | 1.4V | 250A | ANODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 3mA | 265A | 800V | Standard | 800V | 11A | 1 | 3mA @ 800V | 1.4V @ 36A | -40°C~180°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSEP15-03A | IXYS |
Min: 1 Mult: 1 |
download | HiPerFRED™ | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | AVALANCHE | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-dsep1503a-datasheets-1787.pdf | TO-220-2 | 2 | 2 | yes | EAR99 | SNUBBER DIODE, FREE WHEELING DIODE | 8541.10.00.80 | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | 1.68V | 140A | CATHODE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 90W | 100μA | 140A | 300V | 30 ns | 30 ns | Standard | 300V | 15A | 1 | 100μA @ 300V | 1.68V @ 15A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSEP30-04A | IXYS |
Min: 1 Mult: 1 |
download | HiPerFRED™ | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | AVALANCHE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-dsep3004a-datasheets-2005.pdf | TO-247-2 | Lead Free | 2 | yes | EAR99 | FREE WHEELING DIODE, SNUBBER DIODE | 8541.10.00.80 | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | R-PSFM-T2 | 1.46V | 280A | CATHODE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 250μA | 400V | 400V | TO-247AD | 30 ns | 30 ns | Standard | 400V | 30A | 1 | 250μA @ 400V | 1.46V @ 30A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MKI50-06A7 | IXYS |
Min: 1 Mult: 1 |
download | Chassis Mount, PCB, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2011 | /files/ixys-mki5006a7t-datasheets-4860.pdf | E2 | 107.5mm | 17mm | 45mm | Lead Free | 12 | 20 Weeks | 12 | yes | EAR99 | 225W | UPPER | UNSPECIFIED | MKI | 4 | Insulated Gate BIP Transistors | 2.8nF | SILICON | Full Bridge Inverter | ISOLATED | MOTOR CONTROL | N-CHANNEL | 225W | 600V | 600V | 110 ns | 600V | 72A | Standard | 330 ns | 2.4 V | 20V | 600μA | 2.4V @ 15V, 50A | NPT | No | 2.8nF @ 25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MMIX1F520N075T2 | IXYS |
Min: 1 Mult: 1 |
download | GigaMOS™, TrenchT2™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-mmix1f520n075t2-datasheets-2041.pdf | 24-PowerSMD, 21 Leads | 25.25mm | 5.7mm | 23.25mm | Lead Free | 21 | 30 Weeks | 21 | yes | EAR99 | AVALANCHE RATED | No | MMIX1F520N075T2 | DUAL | GULL WING | 21 | 1 | Single | 830W | 1 | FET General Purpose Power | 175°C | 48 ns | 80 ns | 500A | 20V | SILICON | ISOLATED | SWITCHING | 830W Tc | 3000 mJ | 75V | N-Channel | 41000pF @ 25V | 1.6m Ω @ 100A, 10V | 5V @ 8mA | 500A Tc | 545nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTN200N10L2 | IXYS |
Min: 1 Mult: 1 |
download | Linear L2™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-ixtn200n10l2-datasheets-2221.pdf | SOT-227-4, miniBLOC | Lead Free | 4 | 28 Weeks | 11MOhm | 4 | yes | EAR99 | AVALANCHE RATED, UL RECOGNIZED | unknown | NICKEL | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 830W | 1 | FET General Purpose Power | Not Qualified | 178A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 830W Tc | 500A | 5000 mJ | 100V | N-Channel | 23000pF @ 25V | 11m Ω @ 100A, 10V | 4.5V @ 3mA | 178A Tc | 540nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA36N30P | IXYS | $0.33 |
Min: 1 Mult: 1 |
download | PolarHT™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixta36n30p-datasheets-4075.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 28 Weeks | 110MOhm | yes | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 300W | 1 | Not Qualified | R-PSSO-G2 | 30ns | 28 ns | 97 ns | 36A | 30V | SILICON | DRAIN | SWITCHING | 300W Tc | 90A | 1000 mJ | 300V | N-Channel | 2250pF @ 25V | 110m Ω @ 18A, 10V | 5.5V @ 250μA | 36A Tc | 70nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFP14N85XM | IXYS | $5.42 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfp14n85xm-datasheets-4373.pdf | TO-220-3 Full Pack | 19 Weeks | yes | 850V | 38W Tc | N-Channel | 1043pF @ 25V | 550m Ω @ 7A, 10V | 5.5V @ 1mA | 14A Tc | 30nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFN170N25X3 | IXYS | $35.30 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfn170n25x3-datasheets-4943.pdf | SOT-227-4, miniBLOC | 19 Weeks | yes | unknown | 250V | 390W Tc | N-Channel | 13500pF @ 25V | 7.4m Ω @ 85A, 10V | 4.5V @ 4mA | 170A Tc | 190nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFX26N120P | IXYS | $6.35 |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfx26n120p-datasheets-1890.pdf | TO-247-3 | Lead Free | 3 | 30 Weeks | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 960W | 1 | FET General Purpose Power | Not Qualified | 55ns | 58 ns | 76 ns | 26A | 30V | SILICON | DRAIN | SWITCHING | 1200V | 960W Tc | 60A | 0.46Ohm | 1500 mJ | 1.2kV | N-Channel | 16000pF @ 25V | 500m Ω @ 13A, 10V | 6.5V @ 1mA | 26A Tc | 225nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFN120N65X2 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/ixys-ixfn120n65x2-datasheets-2190.pdf | SOT-227-4, miniBLOC | 19 Weeks | 108A | 650V | 890W Tc | N-Channel | 15500pF @ 25V | 24m Ω @ 54A, 10V | 5.5V @ 8mA | 108A Tc | 225nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFN90N85X | IXYS | $264.41 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/ixys-ixfn90n85x-datasheets-2600.pdf | SOT-227-4, miniBLOC | 19 Weeks | SOT-227B | 13.3nF | 90A | 850V | 1200W Tc | N-Channel | 13300pF @ 25V | 41mOhm @ 500mA, 10V | 5.5V @ 8mA | 90A Tc | 340nC @ 10V | 41 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA75N10P | IXYS | $4.41 |
Min: 1 Mult: 1 |
download | PolarHT™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixta75n10p-datasheets-5494.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 28 Weeks | yes | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 360W | 1 | Not Qualified | R-PSSO-G2 | 53ns | 45 ns | 66 ns | 75A | 20V | SILICON | DRAIN | SWITCHING | 360W Tc | 200A | 0.025Ohm | 1000 mJ | 100V | N-Channel | 2250pF @ 25V | 25m Ω @ 500mA, 10V | 5.5V @ 250μA | 75A Tc | 74nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFK170N10P | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~175°C TJ | Bulk | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfk170n10p-datasheets-5575.pdf | TO-264-3, TO-264AA | Lead Free | 3 | 30 Weeks | No SVHC | 10mOhm | 3 | yes | EAR99 | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 714W | 1 | FET General Purpose Power | 50ns | 33 ns | 90 ns | 170A | 20V | 100V | SILICON | DRAIN | SWITCHING | 5V | 715W Tc | 150 ns | 2000 mJ | 100V | N-Channel | 6000pF @ 25V | 5 V | 9m Ω @ 500mA, 10V | 5V @ 4mA | 170A Tc | 198nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFX52N100X | IXYS | $30.12 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfk52n100x-datasheets-5671.pdf | TO-247-3 | 19 Weeks | 1000V | 1250W Tc | N-Channel | 6725pF @ 25V | 125m Ω @ 26A, 10V | 6V @ 4mA | 52A Tc | 245nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFK80N60P3 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, Polar3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfk80n60p3-datasheets-9089.pdf | TO-264-3, TO-264AA | 19.96mm | 26.16mm | 5.13mm | Lead Free | 3 | 30 Weeks | No SVHC | 3 | EAR99 | AVALANCHE RATED | No | 3 | 1 | Single | 1.3kW | 1 | FET General Purpose Power | 48 ns | 25ns | 8 ns | 87 ns | 80A | 30V | SILICON | DRAIN | SWITCHING | 5V | 1300W Tc | 200A | 0.07Ohm | 2000 mJ | 600V | N-Channel | 13100pF @ 25V | 70m Ω @ 500mA, 10V | 5V @ 8mA | 80A Tc | 190nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH10N100D2 | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixth10n100d2-datasheets-7031.pdf | TO-247-3 | 3 | 24 Weeks | SINGLE | 3 | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 10A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1000V | 1000V | 695W Tc | N-Channel | 5320pF @ 25V | 1.5 Ω @ 5A, 10V | 10A Tc | 200nC @ 5V | Depletion Mode | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTT1N300P3HV | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/ixys-ixtt1n300p3hv-datasheets-7175.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 24 Weeks | unknown | 1A | 3000V | 195W Tc | N-Channel | 895pF @ 25V | 50 Ω @ 500mA, 10V | 4V @ 250μA | 1A Tc | 30.6nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTT2N300P3HV | IXYS | $42.68 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~155°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/ixys-ixtt2n300p3hv-datasheets-2202.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 24 Weeks | unknown | 2A | 3000V | 520W Tc | N-Channel | 1890pF @ 25V | 21 Ω @ 1A, 10V | 5V @ 250μA | 2A Tc | 73nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH52N50P2 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarHV™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfh52n50p2-datasheets-1534.pdf | TO-247-3 | 3 | 30 Weeks | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 960W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 52A | 30V | SILICON | DRAIN | SWITCHING | 960W Tc | 150A | 0.12Ohm | 1500 mJ | 500V | N-Channel | 6800pF @ 25V | 120m Ω @ 26A, 10V | 4.5V @ 4mA | 52A Tc | 113nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA4N80P-TRL | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 28 Weeks | 800V | 100W Tc | N-Channel | 750pF @ 25V | 3.4 Ω @ 1.8A, 10V | 5.5V @ 100μA | 3.6A Tc | 14.2nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTU01N100D | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixty01n100d-datasheets-0137.pdf | TO-251-3 Short Leads, IPak, TO-251AA | Lead Free | 3 | 24 Weeks | yes | EAR99 | unknown | 8541.29.00.95 | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 1.1W | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 6ns | 6 ns | 30 ns | 100mA | 20V | SILICON | DRAIN | SWITCHING | 1000V | 1.1W Ta 25W Tc | 0.1A | 0.4A | 110Ohm | 1kV | N-Channel | 120pF @ 25V | 80 Ω @ 50mA, 0V | 5V @ 25μA | 100mA Tc | Depletion Mode | 0V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFA10N80P | IXYS | $0.38 |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarHT™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfa10n80p-datasheets-2794.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 3 | 30 Weeks | No SVHC | 3 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | 22ns | 22 ns | 62 ns | 10A | 30V | SILICON | DRAIN | SWITCHING | 5.5V | 300W Tc | 600 mJ | 800V | N-Channel | 2050pF @ 25V | 1.1 Ω @ 5A, 10V | 5.5V @ 2.5mA | 10A Tc | 40nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFA30N25X3 | IXYS | $5.80 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfy30n25x3-datasheets-4884.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 19 Weeks | 250V | 176W Tc | N-Channel | 1450pF @ 25V | 60m Ω @ 15A, 10V | 4.5V @ 500μA | 30A Tc | 21nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTX110N20L2 | IXYS |
Min: 1 Mult: 1 |
download | Linear L2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixtx110n20l2-datasheets-3655.pdf | TO-247-3 | Lead Free | 3 | 28 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | 110A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | AMPLIFIER | 200V | 200V | 960W Tc | 275A | 0.024Ohm | 5000 mJ | N-Channel | 23000pF @ 25V | 24m Ω @ 55A, 10V | 4.5V @ 3mA | 110A Tc | 500nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFL132N50P3 | IXYS | $28.30 |
Min: 1 Mult: 1 |
download | HiPerFET™, Polar3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfl132n50p3-datasheets-3725.pdf | ISOPLUS264™ | 20.29mm | 26.42mm | 5.31mm | 3 | 26 Weeks | 264 | AVALANCHE RATED | unknown | SINGLE | 3 | 1 | FET General Purpose Power | R-PSIP-T3 | 44 ns | 72 ns | 63A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 500V | 500V | 520W Tc | 330A | 0.043Ohm | 3000 mJ | N-Channel | 18600pF @ 25V | 43m Ω @ 66A, 10V | 5V @ 8mA | 63A Tc | 250nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFA16N60P3 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, Polar3™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/ixys-ixfa16n60p3-datasheets-3792.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 30 Weeks | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | SINGLE | GULL WING | 4 | 1 | FET General Purpose Power | R-PSSO-G2 | 16A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 347W Tc | 40A | 0.44Ohm | 800 mJ | N-Channel | 1830pF @ 25V | 440m Ω @ 8A, 10V | 5V @ 1.5mA | 16A Tc | 36nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH48N20 | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixth48n20-datasheets-3828.pdf | TO-247-3 | 3 | 3 | yes | EAR99 | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 275W | 1 | Not Qualified | 19ns | 17 ns | 79 ns | 48A | 20V | SILICON | DRAIN | SWITCHING | 275W Tc | TO-247AD | 192A | 0.05Ohm | 1000 mJ | 200V | N-Channel | 3000pF @ 25V | 50m Ω @ 15A, 10V | 4V @ 250μA | 48A Tc | 110nC @ 10V | 10V | ±20V |
